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1. 发明授权

US06583572B2 Inductive plasma processor including current sensor for plasma excitation coil 有权
公开(公告)号：US06583572B2
公开(公告)日：2003-06-24
申请号：US09820709
申请日：2001-03-30
申请人： Robert G. Veltrop , Jian J. Chen , Thomas E. Wicker
发明人： Robert G. Veltrop , Jian J. Chen , Thomas E. Wicker
IPC分类号： H01J724
CPC分类号： H01J37/32174 , H01J37/321
摘要： An inductive plasma processor includes an RF plasma excitation coil having plural windings, each having a first end connected in parallel to be driven by a single RF source via a single matching network. Second ends of the windings are connected to ground by termination capacitors, in turn connected by a lead to ground. A current sensor including a winding around a toroidal core is coupled to the lead between each termination capacitor and ground. The current sensor is surrounded by a grounded shield. There is minimum electromagnetic interference from an ambient RF environment to the current sensor, to provide an accurate current sensor.

2. 发明授权

US06463875B1 Multiple coil antenna for inductively-coupled plasma generation systems 有权
标题翻译：用于电感耦合等离子体发生系统的多线圈天线
公开(公告)号：US06463875B1
公开(公告)日：2002-10-15
申请号：US09711935
申请日：2000-11-15
申请人： Jian J. Chen , Robert G. Veltrop , Thomas E. Wicker
发明人： Jian J. Chen , Robert G. Veltrop , Thomas E. Wicker
IPC分类号： H05H146
CPC分类号： H01J37/321
摘要： A radio frequency plasma multiple-coil antenna allows for controllable, uniform inductive coupling within a plasma reactor. According to exemplary embodiments, multiple coils are positioned on a dielectric window of a plasma chamber, and are powered by a single radio frequency generator and tuned by a single matching network. Each coil is either planar or a combination of a planar coil and a vertically stacked helical coil. The input end of each coil is connected to an input tuning capacitor and the output end is terminated to the ground through an output tuning capacitor. The location of the maximum inductive coupling of the radio frequency to the plasma is mainly determined by the output capacitor, while the input capacitor is mainly used to adjust current magnitude into each coil. By adjusting the current magnitude and the location of the maximum inductive coupling within each coil, the plasma density in different radial and azimuthal regions can be varied and controlled, and therefore, radially and azimuthally uniform plasma can be achieved.
摘要翻译：射频等离子体多线圈天线允许等离子体反应器内的可控的，均匀的电感耦合。根据示例性实施例，多个线圈位于等离子体室的电介质窗口上，并且由单个射频发生器供电并由单个匹配网络调谐。每个线圈是平面的或平面线圈和垂直堆叠的螺旋线圈的组合。每个线圈的输入端连接到输入调谐电容器，输出端通过输出调谐电容端接到地。射频对等离子体的最大感应耦合的位置主要由输出电容决定，而输入电容主要用于调整每个线圈的电流幅值。通过调整每个线圈内的最大电感耦合的电流大小和位置，可以改变和控制不同径向和方位区域中的等离子体密度，因此可以实现径向和方位均匀的等离子体。

3. 发明授权

US06527912B2 Stacked RF excitation coil for inductive plasma processor 有权
公开(公告)号：US06527912B2
公开(公告)日：2003-03-04
申请号：US09821752
申请日：2001-03-30
申请人： Jian J. Chen , Robert G. Veltrop , Thomas E. Wicker
发明人： Jian J. Chen , Robert G. Veltrop , Thomas E. Wicker
IPC分类号： H05H1100
CPC分类号： H01J37/321
摘要： A radio frequency excitation coil of an inductive plasma processor includes a planar turn connected in series with a segment of the coil stacked above a portion of the planar turn. The stacked segment is placed around a region having weak radio frequency coupling to plasma due to azimuthal asymmetries in the chamber and/or the excitation coil. In a single winding embodiment, the stacked segment is close to an interconnection gap between two adjacent planar turns and extends in both directions from the gap to compensate low radio frequency coupling to plasma in the gap region. In an embodiment including two electrically parallel spatially concentric windings, the stacked segment extends beyond one side of an interconnection gap of two adjacent turns, and is aligned with the planar turn such that one end of the stacked segment is directly connected to an end of the planar turn via a straight, short stub. Terminals of the coil are connected to RF excitation circuitry terminals in a housing above the coil by leads extending smoothly and gradually without sharp bends between the coil terminals and the excitation circuitry terminals. Ends of the planar turn and the stacked segment are connected by a lead extending smoothly and gradually without sharp bends between its ends.

4. 发明授权

US06164241A Multiple coil antenna for inductively-coupled plasma generation systems 失效
公开(公告)号：US06164241A
公开(公告)日：2000-12-26
申请号：US106852
申请日：1998-06-30
申请人： Jian J. Chen , Robert G. Veltrop , Thomas E. Wicker
发明人： Jian J. Chen , Robert G. Veltrop , Thomas E. Wicker
IPC分类号： H05H1/46 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , C23C16/507
CPC分类号： H01J37/321
摘要： A radio frequency plasma multiple-coil antenna allows for controllable, uniform inductive coupling within a plasma reactor. According to exemplary embodiments, multiple coils are positioned on a dielectric window of a plasma chamber, and are powered by a single radio frequency generator and tuned by a single matching network. Each coil is either planar or a combination of a planar coil and a vertically stacked helical coil. The input end of each coil is connected to an input tuning capacitor and the output end is terminated to the ground through an output tuning capacitor. The location of the maximum inductive coupling of the radio frequency to the plasma is mainly determined by the output capacitor, while the input capacitor is mainly used to adjust current magnitude into each coil. By adjusting the current magnitude and the location of the maximum inductive coupling within each coil, the plasma density in different radial and azimuthal regions can be varied and controlled, and therefore, radially and azimuthally uniform plasma can be achieved.

5. 发明授权

US6155199A Parallel-antenna transformer-coupled plasma generation system 失效
标题翻译：并联天线变压器耦合等离子体发生系统
公开(公告)号：US6155199A
公开(公告)日：2000-12-05
申请号：US52144
申请日：1998-03-31
申请人： Jian J. Chen , Robert G. Veltrop , Thomas E. Wicker
发明人： Jian J. Chen , Robert G. Veltrop , Thomas E. Wicker
IPC分类号： H05H1/46 , H01J37/32 , H01L21/302 , H01L21/3065 , C23C16/00
CPC分类号： H01J37/32174 , H01J37/32082 , H01J37/32165
摘要： Radio frequency plasma coupling systems allow for controllable, uniform inductive coupling within a plasma reactor, as well as separately controllable, uniform capacitive coupling within the reactor. According to exemplary embodiments, a set of parallel coupling elements are positioned on a dielectric window of a plasma chamber, and the positioning of the elements and/or a set of phase shifters situated between the elements are used to force the radio frequency current flowing within the elements to be oriented in a common direction. Consequently, the inductively coupled fields generated by the elements are reinforcing, and induce a highly uniform plasma in the reactor. Further, the electrical characteristics of the elements are such that independently controllable and highly uniform capacitive coupling can be provided in order to prevent polymer buildup on components within the reactor.
摘要翻译：射频等离子体耦合系统允许等离子体反应器内的可控的，均匀的电感耦合，以及反应器内单独可控的均匀的电容耦合。根据示例性实施例，一组平行耦合元件位于等离子体室的电介质窗口上，并且位于元件之间的元件和/或一组移相器的定位被用于迫使射频电流在元素要朝向共同的方向。因此，由元件产生的电感耦合场是增强的，并且在反应器中引起高度均匀的等离子体。此外，元件的电特性使得可以提供独立可控和高度均匀的电容耦合，以防止聚合物积聚在反应器内的组件上。

6. 发明授权

US07096819B2 Inductive plasma processor having coil with plural windings and method of controlling plasma density 有权
公开(公告)号：US07096819B2
公开(公告)日：2006-08-29
申请号：US09821027
申请日：2001-03-30
申请人： Jian J. Chen , Robert G. Veltrop , Thomas E. Wicker
发明人： Jian J. Chen , Robert G. Veltrop , Thomas E. Wicker
IPC分类号： C23C16/00 , H01L21/00
CPC分类号： H01J37/32174 , H01J37/321
摘要： An inductive plasma processor includes a multiple winding radio frequency coil having plural electrically parallel, spatially concentric windings (1) having different amounts of RF power supplied to them, and (2) arranged to produce electromagnetic fields having different couplings to different regions of plasma in the chamber to control plasma flux distribution incident on a processed workpiece. The coil is powered by a single radio frequency generator via a single matching network. Input and output ends of each winding are respectively connected to input and output tuning capacitors. In a first embodiment, the location of maximum inductive coupling of the radio frequency to the plasma and the current magnitude in each winding are respectively mainly determined by values of the output and input capacitors. By adjusting all the input and output capacitors simultaneously, the current to a winding can be varied while the current to the other winding can be maintained constant as if these windings were completely de-coupled and independent. Therefore, the capacitors can control the plasma density in different radial and azimuthal regions. In another embodiment, a relatively low frequency drives the coil whereby each winding has a relatively short electrical length, causing substantially small standing wave current and voltage variations. The output capacitor for each winding adjusts current magnitude, to eliminate the need for the input capacitors and reduce operational complexity.

7. 发明授权

US07563723B2 Critical dimension control for integrated circuits 失效
标题翻译：集成电路的关键尺寸控制
公开(公告)号：US07563723B2
公开(公告)日：2009-07-21
申请号：US11498707
申请日：2006-08-03
申请人： Mirzafer K. Abatchev , David K. Hwang , Robert G. Veltrop
发明人： Mirzafer K. Abatchev , David K. Hwang , Robert G. Veltrop
IPC分类号： H01L21/302
CPC分类号： H01L21/0331 , H01L21/0337 , H01L21/0338
摘要： Methods of etching substrates with small critical dimensions and altering the critical dimensions are disclosed. In one embodiment, a sulfur oxide based plasma is used to etch an amorphous carbon hard mask layer. The features of a pattern can be shrunk using a plasma etch to reduce the resist elements on the surface of the masking structure. Features in the pattern can also be enlarged by depositing polymer on the resist elements or by sloping an underlying layer. In one preferred embodiment, features of the pattern are shrunk before being enlarged in order to reduce line edge roughness.
摘要翻译：公开了蚀刻具有小临界尺寸的基板并改变临界尺寸的方法。在一个实施方案中，使用基于硫氧化物的等离子体来蚀刻无定形碳硬掩模层。可以使用等离子体蚀刻来缩小图案的特征以减少掩模结构的表面上的抗蚀剂元件。图案中的特征也可以通过在抗蚀剂元件上沉积聚合物或通过倾斜下面的层来扩大。在一个优选实施例中，图案的特征在被放大之前收缩以便减少线边缘粗糙度。

8. 发明授权

US07271106B2 Critical dimension control for integrated circuits 有权
标题翻译：集成电路的关键尺寸控制
公开(公告)号：US07271106B2
公开(公告)日：2007-09-18
申请号：US10931772
申请日：2004-08-31
申请人： Mirzafer K. Abatchev , David K. Hwang , Robert G. Veltrop
发明人： Mirzafer K. Abatchev , David K. Hwang , Robert G. Veltrop
IPC分类号： H01L21/302
CPC分类号： H01L21/0331 , H01L21/0337 , H01L21/0338
摘要： Methods of etching substrates with small critical dimensions and altering the critical dimensions are disclosed. In one embodiment, a sulfur oxide based plasma is used to etch an amorphous carbon hard mask layer. The features of a pattern can be shrunk using a plasma etch to reduce the resist elements on the surface of the masking structure. Features in the pattern can also be enlarged by depositing polymer on the resist elements or by sloping an underlying layer. In one preferred embodiment, features of the pattern are shrunk before being enlarged in order to reduce line edge roughness.
摘要翻译：公开了蚀刻具有小临界尺寸的基板并改变临界尺寸的方法。在一个实施方案中，使用基于硫氧化物的等离子体来蚀刻无定形碳硬掩模层。可以使用等离子体蚀刻来缩小图案的特征以减少掩模结构的表面上的抗蚀剂元件。图案中的特征也可以通过在抗蚀剂元件上沉积聚合物或通过倾斜下面的层来扩大。在一个优选实施例中，图案的特征在被放大之前收缩以便减少线边缘粗糙度。

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