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    • 8. 发明授权
    • Method of controlling non-volatile memory device
    • 控制非易失性存储器件的方法
    • US08467262B2
    • 2013-06-18
    • US13116214
    • 2011-05-26
    • Hyun-Jin ChoiChan-Ik ParkJeong-Woo LeeSung-Joo Yoo
    • Hyun-Jin ChoiChan-Ik ParkJeong-Woo LeeSung-Joo Yoo
    • G11C8/00
    • G11C11/5628G11C16/0483G11C16/10
    • A method of controlling a non-volatile memory device includes comparing the number of banks that are in operating states with a threshold value. If the number of the banks is smaller than the threshold value, data stored in a standby bank is read. If there is no bank having data to be read, a standby bank is programmed. If the number of the banks is equal to or greater than the threshold value or if the reading or the programming is performed, it is determined whether there is a reading or programming command to be performed. If there is the reading or programming command to be performed, the process is repeated from the comparing step. The programming may include programming of a most significant bit (MSB) page or a least significant bit (LSB) page.
    • 控制非易失性存储器件的方法包括将处于工作状态的存储体的数量与阈值进行比较。 如果存储体的数量小于阈值,则读取存储在备用库中的数据。 如果没有银行有要读取的数据,则编程一个备用银行。 如果存储体的数量等于或大于阈值,或者如果执行读取或编程,则确定是否存在要执行的读取或编程命令。 如果要执行读取或编程命令,则从比较步骤重复该过程。 编程可以包括对最高有效位(MSB)页或最低有效位(LSB)页的编程。