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    • 3. 发明授权
    • Magnetic head tester using magnetic disk with pre-written servo
    • 磁头测试仪采用磁盘预写伺服
    • US07580218B2
    • 2009-08-25
    • US11217872
    • 2005-09-01
    • Lou ShrinkleDavid HuPeter CrillMatthew Yee
    • Lou ShrinkleDavid HuPeter CrillMatthew Yee
    • G11B5/596
    • G11B5/59627G11B5/455
    • A method for operating a head testing apparatus (spin stand) using a mounted hard disk that has had its servo track information pre-written in an external servo-writing apparatus rather than in the testing apparatus itself. This insures more accurate servo-track writing and renders the testing operation more efficient. The problem of repeatable runout (RRO) associated with the transfer of a disk written in one machine to another is eliminated by forming a corrected position error signal (PES) by subtracting the average offset of one or more servo sector locations previously calculated using limited bandwidth operation of the servomechanism, from the position error signal generated during full bandwidth servo operation of the apparatus.
    • 使用已经将其伺服信息信息预写在外部伺服写入装置而不是在测试装置本身中的安装的硬盘来操作头部测试装置(旋转架)的方法。 这样可以确保更准确的伺服轨迹写入,并使测试操作更有效率。 通过减去先前使用有限带宽计算的一个或多个伺服扇区位置的平均偏移量来形成校正位置误差信号(PES)来消除与将一个机器中写入的盘传输到另一个机器的可重复跳动(RRO)的问题 从设备的全带宽伺服操作期间产生的位置误差信号来操作伺服机构。
    • 5. 发明申请
    • Business solution management (BSM)
    • 业务解决方案管理(BSM)
    • US20050021348A1
    • 2005-01-27
    • US10624860
    • 2003-07-21
    • Claribel ChanDavid HuTim LandvoigtCharles NelsonJames Tarver
    • Claribel ChanDavid HuTim LandvoigtCharles NelsonJames Tarver
    • G06Q10/06G06Q10/10G06F17/60
    • G06Q10/0637G06Q10/067G06Q10/10
    • Systems and techniques to allow a user to design and manage business solutions. The business solution management system (150) comprises a portal layer (112), an application layer (104) and a data repository (106). The portal layer (112) comprises at least first and second agents (204, 208). The application layer (104) comprises at least first and second software applications (220, 224). The first and second agents (204, 208) provide user interfaces to the first and second software applications (220, 224). The first software application (220) is operable to allow a user to design a business solution with user parameters and user-selectable, pre-defined business process objects and pre-defined technology objects. The second software application (224) is operable to allow a user to manage the business solution. The data repository (106) comprises the pre-defined business objects (316) and pre-defined technology objects (314).
    • 允许用户设计和管理业务解决方案的系统和技术。 业务解决方案管理系统(150)包括门户层(112),应用层(104)和数据存储库(106)。 入口层(112)包括至少第一和第二代理(204,208)。 应用层(104)至少包括第一和第二软件应用(220,224)。 第一和第二代理(204,208)向第一和第二软件应用程序(220,224)提供用户界面。 第一软件应用程序(220)可操作以允许用户设计具有用户参数和用户可选择的预定义业务处理对象和预定义技术对象的业务解决方案。 第二软件应用程序(224)可操作以允许用户管理业务解决方案。 数据存储库(106)包括预定义的业务对象(316)和预定义的技术对象(314)。
    • 10. 发明授权
    • ESD parasitic bipolar transistors with high resistivity regions in the collector
    • 集电极中具有高电阻率区域的ESD寄生双极晶体管
    • US06787880B2
    • 2004-09-07
    • US10437093
    • 2003-05-13
    • David HuJun Cai
    • David HuJun Cai
    • H01L218238
    • H01L27/027
    • A method and a structure for a parasitic bipolar silicided ESD device that has high resistivity regions within the collector of the parasitic NPN. The device has the structure of a N-MOS transistor and a substrate contact. The device preferably has silicide regions over the doped regions. The invention has two types of high resistivity regions: 1) isolation regions (e.g., oxide shallow trench isolation (STI)) and 2) undoped or lightly doped regions (e.g., channel regions). The channel regions can have gates thereover and the gates can be charged. Also, optionally a n−well (n minus well) can be formed under the collector. The high resistivity regions increase the collector resistivity thereby improving the performance of the parasitic bipolar ESD device.
    • 一种在寄生NPN的集电极内具有高电阻率区域的寄生双极硅化ESD器件的方法和结构。 该器件具有N-MOS晶体管和衬底接触的结构。 器件优选在掺杂区域上方具有硅化物区域。 本发明具有两种类型的高电阻率区域:1)隔离区域(例如,氧化物浅沟槽隔离(STI))和2)未掺杂或轻掺杂区域(例如沟道区)。 通道区域可以有栅极,栅极可以充电。 此外,可以在收集器下方形成任选的n - 阱(n-negative well)。 高电阻率区域增加了集电极电阻率,从而提高了寄生双极型ESD器件的性能。