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1. 发明授权

US5822717A Method and apparatus for automated wafer level testing and reliability data analysis 失效
标题翻译：自动化晶圆级测试和可靠性数据分析的方法和设备
公开(公告)号：US5822717A
公开(公告)日：1998-10-13
申请号：US509362
申请日：1995-07-31
申请人： Jerry Tsiang , Mikkel Lantz , Yeng-Kaung Peng , Ying Shiau
发明人： Jerry Tsiang , Mikkel Lantz , Yeng-Kaung Peng , Ying Shiau
IPC分类号： G01R31/28 , G01R31/319 , H01L21/66 , G01R17/50
CPC分类号： G01R31/31903 , G01R31/2831 , G01R31/2834 , G01R31/2851
摘要： Methods and apparatus are disclosed for testing integrated circuits at the wafer level and for integrating test results, calculation of lifetimes and generation of trend charts in a common database following testing. A wafer tester controller is supplemented with additional hardware and software to avoid data transfer errors and facilitate processing and storage of test results. The data base is available over a network to all areas of an organization.
摘要翻译：公开了用于在晶片级测试集成电路并且用于在测试之后的通用数据库中集成测试结果，寿命计算和趋势图的生成的方法和装置。晶圆测试仪控制器补充有额外的硬件和软件，以避免数据传输错误，便于处理和存储测试结果。数据库可通过网络提供给组织的所有区域。

2. 发明授权

US06461880B1 Method for monitoring silicide failures 失效
标题翻译：监测硅化物故障的方法
公开(公告)号：US06461880B1
公开(公告)日：2002-10-08
申请号：US09892752
申请日：2001-06-28
申请人： Jerry Tsiang
发明人： Jerry Tsiang
IPC分类号： H01L2166
CPC分类号： H01L22/14
摘要： A method for monitoring silicide failures in the semiconductor process provides P-channel gate oxide capacitors on a semiconductor wafer. The breakdown voltages of the P-channel oxide gate capacitors are measured. With higher rapid thermal anneal (RTA) temperatures, an increased number of short failures occur in the P-channel gate oxide capacitors. Based on a correlation of the P-channel gate oxide capacitor failures and the RTA temperatures, the optimum RTA temperature for the silicide process is determined.
摘要翻译：用于监测半导体工艺中的硅化物故障的方法在半导体晶片上提供P沟道栅极氧化物电容器。测量P沟道氧化物栅极电容器的击穿电压。随着较高的快速热退火（RTA）温度，P沟道栅极氧化物电容器中出现短暂故障的增加。基于P沟道栅极氧化物电容器故障和RTA温度的相关性，确定硅化物工艺的最佳RTA温度。

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