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1. 发明授权

US07033945B2 Gap filling with a composite layer 失效
标题翻译：间隙填充复合层
公开(公告)号：US07033945B2
公开(公告)日：2006-04-25
申请号：US10857829
申请日：2004-06-01
申请人： Jeong Soo Byun , Zheng Yuan , Shankar Venkataraman , M. Ziaul Karim , Thanh N. Pham , Ellie Y. Yieh
发明人： Jeong Soo Byun , Zheng Yuan , Shankar Venkataraman , M. Ziaul Karim , Thanh N. Pham , Ellie Y. Yieh
IPC分类号： H01L21/311
CPC分类号： H01L21/76224
摘要： A method of filling a gap formed between adjacent raised surfaces on a substrate. In one embodiment the method comprises depositing a boron-doped silica glass (BSG) layer over the substrate to partially fill the gap using a thermal CVD process; exposing the BSG layer to a steam ambient at a temperature above the BSG layer's Eutectic temperature; removing an upper portion of the BSG layer by exposing the layer to a fluorine-containing etchant; and depositing an undoped silica glass (USG) layer over the BSG layer to fill the remainder of the gap.
摘要翻译：填充在基板上相邻的凸起表面之间形成的间隙的方法。在一个实施例中，该方法包括在衬底上沉积硼掺杂石英玻璃（BSG）层，以使用热CVD工艺部分填充间隙; 在高于BSG层的共晶温度的温度下将BSG层暴露于蒸汽环境; 通过将层暴露于含氟蚀刻剂来除去BSG层的上部; 以及在BSG层上沉积未掺杂的二氧化硅玻璃（USG）层以填补间隙的剩余部分。

2. 发明授权

US07049211B2 In-situ-etch-assisted HDP deposition using SiF4 失效
标题翻译：使用SiF4进行原位蚀刻辅助HDP沉积
公开(公告)号：US07049211B2
公开(公告)日：2006-05-23
申请号：US11089874
申请日：2005-03-25
申请人： M. Ziaul Karim , DongQing Li , Jeong Soo Byun , Thanh N. Pham
发明人： M. Ziaul Karim , DongQing Li , Jeong Soo Byun , Thanh N. Pham
IPC分类号： H01L21/44 , H01L21/28 , H01L21/469 , H01L21/31
CPC分类号： C23C16/402 , C23C16/045 , H01L21/02164 , H01L21/02274 , H01L21/31612 , H01L21/76837
摘要： A process is provided for depositing an undoped silicon oxide film on a substrate disposed in a process chamber. A process gas that includes SiF4, a fluent gas, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 1011 ions/cm3 is formed from the process gas. The undoped silicon oxide film is deposited over the substrate with the plasma using a process that has simultaneous deposition and sputtering components.
摘要翻译：提供了一种用于在设置在处理室中的衬底上沉积未掺杂的氧化硅膜的工艺。包括SiF 4 N，流动气体，硅源和氧化性气体反应物的工艺气体流入处理室。从处理气体形成离子密度为至少10 11个/ cm 3的等离子体。使用具有同时沉积和溅射组分的工艺，用等离子体在衬底上沉积未掺杂的氧化硅膜。

3. 发明授权

US06903031B2 In-situ-etch-assisted HDP deposition using SiF4 and hydrogen 有权
标题翻译：使用SiF4和氢进行原位蚀刻辅助的HDP沉积
公开(公告)号：US06903031B2
公开(公告)日：2005-06-07
申请号：US10655230
申请日：2003-09-03
申请人： M. Ziaul Karim , DongQing Li , Jeong Soo Byun , Thanh N. Pham
发明人： M. Ziaul Karim , DongQing Li , Jeong Soo Byun , Thanh N. Pham
IPC分类号： C23C16/04 , C23C16/40 , C23C16/50 , H01L21/316 , H01L21/31 , H01L21/469
CPC分类号： C23C16/402 , C23C16/045 , H01L21/02164 , H01L21/02274 , H01L21/31612 , H01L21/76837
摘要： A process is provided for depositing an undoped silicon oxide film on a substrate disposed in a process chamber. A process gas that includes SiF4, H2, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 1011 ions/cm3 is formed from the process gas. The undoped silicon oxide film is deposited over the substrate with the plasma using a process that has simultaneous deposition and sputtering components. A temperature of the substrate during such depositing is greater than 450° C.
摘要翻译：提供了一种用于在设置在处理室中的衬底上沉积未掺杂的氧化硅膜的工艺。包括SiF 4，H 2 S，硅源和氧化性气体反应物的工艺气体流入处理室。从处理气体形成离子密度为至少10 11个/ cm 3的等离子体。使用具有同时沉积和溅射组分的工艺，用等离子体在衬底上沉积未掺杂的氧化硅膜。在这种沉积过程中，衬底的温度大于450℃

4. 发明授权

US07294588B2 In-situ-etch-assisted HDP deposition 失效
标题翻译：原位蚀刻辅助HDP沉积
公开(公告)号：US07294588B2
公开(公告)日：2007-11-13
申请号：US11388657
申请日：2006-03-24
申请人： M. Ziaul Karim , DongQing Li , Jeong Soo Byun , Thanh N. Pham
发明人： M. Ziaul Karim , DongQing Li , Jeong Soo Byun , Thanh N. Pham
IPC分类号： H01L21/31 , H01I21/469
CPC分类号： C23C16/402 , C23C16/045 , H01L21/02164 , H01L21/02274 , H01L21/31612 , H01L21/76837
摘要： A process is provided for depositing an silicon oxide film on a substrate disposed in a process chamber. A process gas that includes a halogen source, a fluent gas, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 1011 ions/cm3 is formed from the process gas. The silicon oxide film is deposited over the substrate with a halogen concentration less than 1.0%. The silicon oxide film is deposited with the plasma using a process that has simultaneous deposition and sputtering components. The flow rate of the halogen source to the process chamber to the flow rate of the silicon source to the process chamber is substantially between 0.5 and 3.0.
摘要翻译：提供了一种在设置在处理室中的衬底上沉积氧化硅膜的工艺。包括卤素源，流动气体，硅源和氧化性气体反应物的处理气体流入处理室。从处理气体形成离子密度为至少10 11个/ cm 3的等离子体。氧化硅膜以低于1.0％的卤素浓度沉积在衬底上。使用具有同时沉积和溅射组分的工艺，用等离子体沉积氧化硅膜。卤素源到处理室的流速与硅源到处理室的流速基本上在0.5和3.0之间。

5. 发明申请

US20110253046A1 APPARATUS FOR PROVIDING UNIFORM GAS DELIVERY TO A REACTOR 审中-公开
标题翻译：将均匀气体输送到反应器的装置
公开(公告)号：US20110253046A1
公开(公告)日：2011-10-20
申请号：US13168792
申请日：2011-06-24
申请人： Jeremie J. Dalton , M. Ziaul Karim , Ana R. Londergan
发明人： Jeremie J. Dalton , M. Ziaul Karim , Ana R. Londergan
IPC分类号： C23C16/455
CPC分类号： C23C16/45565 , C23C16/45544 , C23C16/45574
摘要： A gas distribution system for a reactor having at least two distinct gas source orifice arrays displaced from one another along an axis defined by a gas flow direction from the gas source orifice arrays towards a work-piece deposition surface such that at least a lower one of the gas source orifice arrays is located between a higher one of the gas source orifice arrays and the work-piece deposition surface. Orifices in the higher one of the gas source orifice arrays may spaced an average of 0.2-0.8 times a distance between the higher one of the gas source orifice arrays and the work-piece deposition surface, while orifices in the lower one of the gas source orifice arrays may be spaced an average of 0.1-0.4 times a distance between the higher one of the gas source orifice array and the work-piece deposition surface.
摘要翻译：一种用于反应器的气体分配系统，具有至少两个不同的气体源孔口阵列，其沿着由气体流动方向限定的轴线相对于工件沉积表面彼此位移，使得至少一个气源孔阵列位于较高的一个气源孔阵列和工件沉积表面之间。较高气体源孔阵列中的孔可以间隔平均距离更高的气源孔阵列和工件沉积表面之间的距离的0.2-0.8倍，而下一个气源中的孔孔阵列可以间隔平均为较高的气源孔阵列和工件沉积表面之间的距离的0.1-0.4倍。

6. 发明申请

US20050008790A1 Hydrogen assisted HDP-CVD deposition process for aggressive gap-fill technology 失效
标题翻译：氢辅助HDP-CVD沉积工艺，用于积极的间隙填充技术
公开(公告)号：US20050008790A1
公开(公告)日：2005-01-13
申请号：US10915781
申请日：2004-08-10
申请人： Bikram Kapoor , M. Ziaul Karim , Anchuan Wang
发明人： Bikram Kapoor , M. Ziaul Karim , Anchuan Wang
IPC分类号： C23C16/04 , C23C16/40 , C23C16/44 , C23C16/455 , H01L21/316 , H05H1/24 , C23C16/00
CPC分类号： C23C16/045 , C23C16/402 , C23C16/45523 , H01J37/321 , H01L21/02164 , H01L21/02211 , H01L21/02274 , H01L21/31612
摘要： A method of depositing a silicon oxide layer over a substrate having a trench formed between adjacent raised surfaces. In one embodiment the silicon oxide layer is formed in a multistep process that includes depositing a first portion of layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a first process gas comprising a silicon source, an oxygen source and helium and/or molecular hydrogen with highD/S ratio, for example, 10-20 and, thereafter, depositing a second portion of the silicon oxide layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a second process gas comprising a silicon source, an oxygen source and molecular hydrogen with a lowerD/S ratio of, for example, 3-10.
摘要翻译：一种在相邻的凸起表面之间形成有沟槽的衬底上沉积氧化硅层的方法。在一个实施例中，氧化硅层形成在多步骤工艺中，其包括通过形成高密度等离子体工艺在衬底上和沟槽内沉积第一部分层，该高密度等离子体工艺具有来自第一工艺气体的同时淀积和溅射组分，源，氧源和具有高D / S比的氦和/或分子氢，例如10-20，然后通过形成高密度等离子体在衬底上和沟槽内沉积氧化硅层的第二部分具有来自包含硅源，氧源和低D / S比例如3-10的分子氢的第二工艺气体的同时沉积和溅射组分的方法。

7. 发明授权

US06303518B1 Methods to improve chemical vapor deposited fluorosilicate glass (FSG) film adhesion to metal barrier or etch stop/diffusion barrier layers 有权
标题翻译：改善化学气相沉积的氟硅酸盐玻璃（FSG）膜与金属屏障或蚀刻停止/扩散阻挡层的粘合力的方法
公开(公告)号：US06303518B1
公开(公告)日：2001-10-16
申请号：US09409580
申请日：1999-09-30
申请人： Jason L. Tian , M. Ziaul Karim , Bart J. van Schravendijk
发明人： Jason L. Tian , M. Ziaul Karim , Bart J. van Schravendijk
IPC分类号： H01L21469
CPC分类号： H01L21/02131 , C23C16/401 , H01L21/02211 , H01L21/02274 , H01L21/0234 , H01L21/02343 , H01L21/02362 , H01L21/31629
摘要： An improved CVD process, preferably a PECVD process, for forming a low-dielectric-constant insulating material on a semiconductor substrate, or on and/or under a metal barrier, or etch stop layer of SiNx, Ta(N), TiN, WNx and others. Specifically, the improved PECVD process provides for deposition of an N2O+SiF4+SiH4 based FSG film having improved characteristics, which may be accomplished in any conventional PECVD chamber, but preferably in a dual frequency PECVD chamber.
摘要翻译：用于在半导体衬底上或在金属屏障上和/或下面形成低介电常数绝缘材料的改进的CVD工艺，优选PECVD工艺，或SiN x，Ta（N），TiN，WNx的蚀刻停止层和别的。具体地，改进的PECVD工艺提供了具有改进特性的N2O + SiF4 + SiH4基FSG膜的沉积，这可以在任何传统的PECVD室中完成，但优选在双频PECVD室中。

8. 发明授权

US07981472B2 Methods of providing uniform gas delivery to a reactor 失效
标题翻译：向反应器提供均匀气体输送的方法
公开(公告)号：US07981472B2
公开(公告)日：2011-07-19
申请号：US12553917
申请日：2009-09-03
申请人： Jeremie J. Dalton , M. Ziaul Karim , Ana R. Londergan
发明人： Jeremie J. Dalton , M. Ziaul Karim , Ana R. Londergan
IPC分类号： C23C16/455
CPC分类号： C23C16/45565 , C23C16/45544 , C23C16/45574
摘要： A method of introducing gasses through a gas distribution system into a reactor involves flowing the gasses through at least two distinct gas source orifice arrays displaced from one another along an axis defined by a gas flow direction from the gas source orifice arrays towards a work-piece. During different time intervals, a purge gas and different reactive precursors are flowed into the reactor from different ones of the gas source orifice arrays. One of the precursors may be associated with a soft saturating atomic layer deposition half reaction and another of the precursors associated with a strongly saturating atomic layer deposition half reaction. An upper one of the gas source orifice arrays may be a relatively planar gas orifice array.
摘要翻译：将气体通过气体分配系统引入反应器的方法包括使气体通过至少两个不同的气体源孔口阵列流动，所述至少两个不同的气体源孔口阵列沿着由气体流动方向限定的轴线从气体源孔阵列朝向工件。在不同的时间间隔期间，吹扫气体和不同的反应性前体从不同的气源孔阵列流入反应器。其中一种前体可能与软饱和原子层沉积半反应相关联，另一种与前体相互连接，具有强饱和原子层沉积半反应。气源孔阵列中的上一个可以是相对平面的气体孔阵列。

9. 发明授权

US06844612B1 Low dielectric constant fluorine-doped silica glass film for use in integrated circuit chips and method of forming the same 失效
标题翻译：用于集成电路芯片的低介电常数氟掺杂石英玻璃膜及其形成方法
公开(公告)号：US06844612B1
公开(公告)日：2005-01-18
申请号：US10426643
申请日：2003-04-29
申请人： Jason Tian , Wenxian Zhu , M. Ziaul Karim , Cong Do
发明人： Jason Tian , Wenxian Zhu , M. Ziaul Karim , Cong Do
IPC分类号： H01L21/314 , H01L21/316 , H01L21/768 , H01L23/532 , H01L23/58
CPC分类号： H01L21/76801 , H01L21/02131 , H01L21/02164 , H01L21/022 , H01L21/02211 , H01L21/02274 , H01L21/3141 , H01L21/31629 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A fluorine-doped silica glass (FSG) dielectric layer includes a number of sublayers. Each sublayer is doped with fluorine in such a way that the doping concentration of fluorine in the sublayer decreases as one moves from an interior region of the sublayer towards one or both of the interfaces between the sublayer and adjacent sublayers. This structure reduces the generation of HF when the layer is exposed to moisture and thereby improves the stability and adhesion properties of the layer. The principles of this invention can also be applied to dielectric layers doped with such other dopants as boron, phosphorus or carbon.
摘要翻译：氟掺杂石英玻璃（FSG）介电层包括多个子层。每个子层掺杂氟，使得子层中氟的掺杂浓度随着从子层的内部区域朝向子层和相邻子层之间的一个或两个界面移动而减小。当该层暴露于水分时，该结构减少HF的产生，从而提高该层的稳定性和粘附性。本发明的原理也可以应用于掺杂有诸如硼，磷或碳的其它掺杂剂的电介质层。

10. 发明授权

US07595088B2 Hydrogen assisted HDP-CVD deposition process for aggressive gap-fill technology 失效
标题翻译：氢辅助HDP-CVD沉积工艺，用于积极的间隙填充技术
公开(公告)号：US07595088B2
公开(公告)日：2009-09-29
申请号：US10915781
申请日：2004-08-10
申请人： Bikram Kapoor , M. Ziaul Karim , Anchuan Wang
发明人： Bikram Kapoor , M. Ziaul Karim , Anchuan Wang
IPC分类号： C23C16/00 , C23C16/40 , H05H1/24
CPC分类号： C23C16/045 , C23C16/402 , C23C16/45523 , H01J37/321 , H01L21/02164 , H01L21/02211 , H01L21/02274 , H01L21/31612
摘要： A method of depositing a silicon oxide layer over a substrate having a trench formed between adjacent raised surfaces. In one embodiment the silicon oxide layer is formed in a multistep process that includes depositing a first portion of layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a first process gas comprising a silicon source, an oxygen source and helium and/or molecular hydrogen with highD/S ratio, for example, 10-20 and, thereafter, depositing a second portion of the silicon oxide layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a second process gas comprising a silicon source, an oxygen source and molecular hydrogen with a lowerD/S ratio of, for example, 3-10.
摘要翻译：一种在相邻的凸起表面之间形成有沟槽的衬底上沉积氧化硅层的方法。在一个实施例中，氧化硅层形成在多步骤工艺中，其包括通过形成高密度等离子体工艺在衬底上和沟槽内沉积第一部分层，该高密度等离子体工艺具有来自第一工艺气体的同时淀积和溅射组分，源，氧源和具有高D / S比的氦和/或分子氢，例如10-20，然后通过形成高密度等离子体在衬底上和沟槽内沉积氧化硅层的第二部分具有来自包含硅源，氧源和低D / S比例如3-10的分子氢的第二工艺气体的同时沉积和溅射组分的方法。

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