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1. 发明授权

US07760565B2 Wordline-to-bitline output timing ring oscillator circuit for evaluating storage array performance 失效
标题翻译：用于评估存储阵列性能的字线到位线输出定时环形振荡器电路
公开(公告)号：US07760565B2
公开(公告)日：2010-07-20
申请号：US11781994
申请日：2007-07-24
申请人： Jente B. Kuang , Jerry C. Kao , Hung C. Ngo , Kevin J. Nowka , Liang-Teck Pang , Jayakumaran Sivagnaname
发明人： Jente B. Kuang , Jerry C. Kao , Hung C. Ngo , Kevin J. Nowka , Liang-Teck Pang , Jayakumaran Sivagnaname
IPC分类号： G11C29/00 , G11C7/00
CPC分类号： G11C29/50 , G01R31/31937 , G11C29/50012 , G11C2029/1202 , G11C2029/1204
摘要： A wordline-to-bitline timing ring oscillator circuit for evaluating storage cell access time provides data on internal bitline access timing, and in particular the total wordline select-to-bitline read output timing. Columns of a storage array are connected in a ring, forming a ring oscillator. The bitline read circuit output of each column is connected to a wordline select input of a next column, with a net inversion around the ring, so that a ring oscillator is formed. The period of oscillation of the ring oscillator is determined by the total wordline select-to-bitline read circuit output timing for a first phase and the pre-charge interval time for the other phase, with the bitline read timing dominating. The circuit may be applied both to small-signal storage arrays, with the sense amplifier timing included within the ring oscillator period, or to large-signal storage arrays, with the read evaluate circuit timing included.
摘要翻译：用于评估存储单元访问时间的字线到位线定时环形振荡器电路提供关于内部位线访问定时的数据，特别是总字线选择到位线读出输出定时。存储阵列的列以环形连接，形成环形振荡器。每列的位线读取电路输出连接到下一列的字线选择输入，环绕环反转，从而形成环形振荡器。环形振荡器的振荡周期由第一相的总字线选择到位线读取电路输出定时和另一相的预充电间隔时间决定，而位线读取时序主导。该电路可以应用于小信号存储阵列，其中包括在环形振荡器周期内的读出放大器定时，或者包括读取评估电路时序的大信号存储阵列。

2. 发明申请

US20090027065A1 Wordline-To-Bitline Output Timing Ring Oscillator Circuit for Evaluating Storage Array Performance 失效
标题翻译：用于评估存储阵列性能的字线到位线输出定时环形振荡器电路
公开(公告)号：US20090027065A1
公开(公告)日：2009-01-29
申请号：US11781994
申请日：2007-07-24
申请人： Jente B. Kuang , Jerry C. Keo , Hung C. Ngo , Kevin J. Nowka , Liang-Teck Pang , Jayakumaran Sivagnaname
发明人： Jente B. Kuang , Jerry C. Keo , Hung C. Ngo , Kevin J. Nowka , Liang-Teck Pang , Jayakumaran Sivagnaname
IPC分类号： G01R27/28
CPC分类号： G11C29/50 , G01R31/31937 , G11C29/50012 , G11C2029/1202 , G11C2029/1204
摘要： A wordline-to-bitline timing ring oscillator circuit for evaluating storage cell access time provides data on internal bitline access timing, and in particular the total wordline select-to-bitline read output timing. Columns of a storage array are connected in a ring, forming a ring oscillator. The bitline read circuit output of each column is connected to a wordline select input of a next column, with a net inversion around the ring, so that a ring oscillator is formed. The period of oscillation of the ring oscillator is determined by the total wordline select-to-bitline read circuit output timing for a first phase and the pre-charge interval time for the other phase, with the bitline read timing dominating. The circuit may be applied both to small-signal storage arrays, with the sense amplifier timing included within the ring oscillator period, or to large-signal storage arrays, with the read evaluate circuit timing included.
摘要翻译：用于评估存储单元访问时间的字线到位线定时环形振荡器电路提供关于内部位线访问定时的数据，特别是总字线选择到位线读出输出定时。存储阵列的列以环形连接，形成环形振荡器。每列的位线读取电路输出连接到下一列的字线选择输入，环绕环反转，从而形成环形振荡器。环形振荡器的振荡周期由第一相的总字线选择到位线读取电路输出定时和另一相的预充电间隔时间决定，而位线读取时序主导。该电路可以应用于小信号存储阵列，其中包括在环形振荡器周期内的读出放大器定时，或者包括读取评估电路时序的大信号存储阵列。

3. 发明授权

US07129754B2 Controlled load limited switch dynamic logic circuitry 失效
标题翻译：受控负载限制开关动态逻辑电路
公开(公告)号：US07129754B2
公开(公告)日：2006-10-31
申请号：US11082805
申请日：2005-03-17
申请人： Hung C. Ngo , Jayakumaran Sivagnaname , Kevin J. Nowka , Robert K. Montoye
发明人： Hung C. Ngo , Jayakumaran Sivagnaname , Kevin J. Nowka , Robert K. Montoye
IPC分类号： H03K19/096
CPC分类号： H03K19/0963
摘要： An LSDL circuit replaces the normal clock control of the pre-charge device for the dynamic node with a control signal that is logic zero whenever the circuit is in an active mode and is a logic one when the circuit is in standby mode. The pre-charge device holds the dynamic node at a pre-charged logic one state independent of the clock. During the logic one evaluate time of the clock, the logic tree determines the asserted state of the dynamic node. During the evaluate time, the asserted state is latched by the static LSDL section. The dynamic node then re-charges to the pre-charge state. Since the pre-charge device is not de-gated during the evaluate time, the dynamic node cannot be inadvertently discharged by noise causing an error. Likewise, since the clock does not couple to the pre-charge device a load is removed from the clock tree lowering clock power.
摘要翻译：只要电路处于活动模式，LSDL电路用动态节点的预充电装置的正常时钟控制替代逻辑零的控制信号，并且当电路处于待机模式时，逻辑为逻辑1。预充电装置将动态节点保持在与时钟无关的预充电逻辑1状态。在逻辑1期间评估时钟的时间，逻辑树确定动态节点的被断言状态。在评估时间期间，断言状态由静态LSDL部分锁存。然后动态节点重新充电到预充电状态。由于在评估时间期间预充电装置没有被去门，所以动态节点不能被无意中的噪声放电，导致错误。类似地，由于时钟不耦合到预充电装置，所以从时钟树中降低时钟功率的负载被去除。

4. 发明授权

US06975134B2 Buffer/driver circuits 失效
标题翻译：缓冲/驱动电路
公开(公告)号：US06975134B2
公开(公告)日：2005-12-13
申请号：US10821048
申请日：2004-04-08
申请人： Jente B. Kuang , Hung C. Ngo , Kevin J. Nowka
发明人： Jente B. Kuang , Hung C. Ngo , Kevin J. Nowka
IPC分类号： H03K17/16 , H03K19/00 , H03K19/003 , H03K19/017
CPC分类号： H03K19/00361 , H03K19/0016 , H03K19/01721
摘要： A buffer/driver having large output devices for driving multiple loads is configured with three parallel paths. The first logic path is made of small devices and is configured to provide the logic function of the buffer/driver without the ability to drive large loads. Second and third logic paths have the logic function of the first logic path up to the last inverting stage. The last inverting stage in each path is a single device for driving the logic states of the buffer output. The second and third logic paths have power-gating that allows the input to the pull-up and pull-down devices to float removing gate-leakage voltage stress. When the second and third logic paths are power-gated, the first logic path provides a keeper function to hold the logic state of the buffer output. The buffer/driver may be an inverter, non-inverter, or provide a multiple input logic function.
摘要翻译：具有用于驱动多个负载的大输出装置的缓冲器/驱动器配置有三个并行路径。第一个逻辑路径由小型设备组成，并配置为提供缓冲器/驱动器的逻辑功能，而无需驱动大负载。第二和第三逻辑路径具有直到上一个反相级的第一逻辑路径的逻辑功能。每个路径中的最后一个反相级是用于驱动缓冲区输出逻辑状态的单个器件。第二和第三逻辑路径具有电源门控，允许上拉和下拉器件的输入漂移去除栅极泄漏电压应力。当第二和第三逻辑路径是电源门控时，第一逻辑路径提供保持器功能以保持缓冲器输出的逻辑状态。缓冲器/驱动器可以是逆变器，非逆变器，或提供多输入逻辑功能。

5. 发明申请

US20120212997A1 TEST STRUCTURE FOR CHARACTERIZING MULTI-PORT STATIC RANDOM ACCESS MEMORY AND REGISTER FILE ARRAYS 失效
标题翻译：表征多端口静态随机访问存储器和寄存器文件阵列的测试结构
公开(公告)号：US20120212997A1
公开(公告)日：2012-08-23
申请号：US13459932
申请日：2012-04-30
申请人： Leland Chang , Jente B. Kuang , Robert K. Montoye , Hung C. Ngo , Kevin J. Nowka
发明人： Leland Chang , Jente B. Kuang , Robert K. Montoye , Hung C. Ngo , Kevin J. Nowka
IPC分类号： G11C29/00
CPC分类号： G11C8/16 , G11C29/32 , G11C29/50 , G11C29/50012
摘要： A test structure for characterizing a production static random access memory (SRAM) array. The test structure includes a characterization circuit having multiple memory cell columns connected in series to form a ring configuration. The characterization circuit is fabricated on a wafer substrate in common with and proximate to a production SRAM array. The characterization circuit preferably includes SRAM cells having a circuit topology substantially identical to the circuit topology of memory cells within the production SRAM array. In one embodiment, the test structure is utilized for characterizing a multi-port memory array and includes multiple memory cell columns connected in series to form a ring oscillator characterization circuit. Each cell column in the characterization circuit includes multiple SRAM cells each having a latching node and multiple data path access nodes. Selection control circuitry selectively enables the multiple data path access nodes for the SRAM cells within the characterization circuit.
摘要翻译：用于表征生产静态随机存取存储器（SRAM）阵列的测试结构。测试结构包括具有串联连接的多个存储单元列的表征电路，以形成环形结构。表征电路在与生产SRAM阵列相同并且靠近生产SRAM阵列的晶片衬底上制造。表征电路优选地包括具有与生产SRAM阵列内的存储器单元的电路拓扑基本相同的电路拓扑的SRAM单元。在一个实施例中，测试结构用于表征多端口存储器阵列，并且包括串联连接的多个存储单元列，以形成环形振荡器表征电路。表征电路中的每个单元列包括多个具有锁存节点和多个数据路径接入节点的SRAM单元。选择控制电路选择性地启用表征电路内的SRAM单元的多个数据路径接入节点。

6. 发明申请

US20080155362A1 Test Structure for Characterizing Multi-Port Static Random Access Memory and Register File Arrays 有权
标题翻译：用于表征多端口静态随机存取存储器和寄存器文件数组的测试结构
公开(公告)号：US20080155362A1
公开(公告)日：2008-06-26
申请号：US11552158
申请日：2006-10-24
申请人： Leland Chang , Jente B. Kuang , Robert K. Montoye , Hung C. Ngo , Kevin J. Nowka
发明人： Leland Chang , Jente B. Kuang , Robert K. Montoye , Hung C. Ngo , Kevin J. Nowka
IPC分类号： G11C29/00
CPC分类号： G11C8/16 , G11C29/32 , G11C29/50 , G11C29/50012
摘要： A test structure for characterizing a production static random access memory (SRAM) array. The test structure includes a characterization circuit having multiple memory cell columns connected in series to form a ring configuration. The characterization circuit is fabricated on a wafer substrate in common with and proximate to a production SRAM array. The characterization circuit preferably includes SRAM cells having a circuit topology substantially identical to the circuit topology of memory cells within the production SRAM array. In one embodiment, the test structure is utilized for characterizing a multi-port memory array and includes multiple memory cell columns connected in series to form a ring oscillator characterization circuit. Each cell column in the characterization circuit includes multiple SRAM cells each having a latching node and multiple data path access nodes. Selection control circuitry selectively enables the multiple data path access nodes for the SRAM cells within the characterization circuit.
摘要翻译：用于表征生产静态随机存取存储器（SRAM）阵列的测试结构。测试结构包括具有串联连接的多个存储单元列的表征电路，以形成环形结构。表征电路在与生产SRAM阵列相同并且靠近生产SRAM阵列的晶片衬底上制造。表征电路优选地包括具有与生产SRAM阵列内的存储器单元的电路拓扑基本相同的电路拓扑的SRAM单元。在一个实施例中，测试结构用于表征多端口存储器阵列，并且包括串联连接的多个存储单元列，以形成环形振荡器表征电路。表征电路中的每个单元列包括多个具有锁存节点和多个数据路径接入节点的SRAM单元。选择控制电路选择性地启用表征电路内的SRAM单元的多个数据路径接入节点。

7. 发明授权

US07276932B2 Power-gating cell for virtual power rail control 有权
标题翻译：用于虚拟电源轨控制的电源门控单元
公开(公告)号：US07276932B2
公开(公告)日：2007-10-02
申请号：US10926597
申请日：2004-08-26
申请人： Jente B. Kuang , Jethro C. Law , Hung C. Ngo , Kevin J. Nowka
发明人： Jente B. Kuang , Jethro C. Law , Hung C. Ngo , Kevin J. Nowka
IPC分类号： H03K19/23
CPC分类号： H03K19/0016
摘要： Virtual power-gated cells (VPC) are configured with control circuitry for buffering control signals and a power-gated block (PGB) comprising two or more NFETs for virtual ground rail nodes and PFETs for virtual positive rail nodes. Each VPC has a control voltage input, a control voltage output, a node coupled to a power supply voltage potential, and a virtual power-gated node that is coupled and decoupled from the power supply potential in response to logic states on the control input. The control signals are buffered by non-power-gated inverters before being applied to the input of a PGB. VPCs may propagate a control signal that is in phase with or inverted from a corresponding control signal at the control input. VPCs may be cascaded to create virtual power rails in chains and power grids. The control signals are latched at the cell boundaries or latched in response to a clock signal.
摘要翻译：虚拟功率门控单元（VPC）配置有用于缓冲控制信号的控制电路和包括用于虚拟接地轨道节点的两个或更多个NFET的功率门控块（PGB），以及用于虚拟正轨节点的PFET。每个VPC具有控制电压输入，控制电压输出，耦合到电源电压电位的节点以及响应于控制输入上的逻辑状态与电源电位耦合和去耦合的虚拟电源门控节点。在施加到PGB的输入之前，控制信号由非电源门控的逆变器进行缓冲。 VPC可以传播与控制输入处的相应控制信号同相或反相的控制信号。 VPC可以级联以在链和电网中创建虚拟电源轨。控制信号在单元边界被锁存或响应于时钟信号锁存。

8. 发明授权

US06980018B2 Self limiting gate leakage driver 失效
标题翻译：自限制闸极泄漏驱动器
公开(公告)号：US06980018B2
公开(公告)日：2005-12-27
申请号：US10835501
申请日：2004-04-29
申请人： Hung C. Ngo , Jente B. Kuang , Kevin J. Nowka
发明人： Hung C. Ngo , Jente B. Kuang , Kevin J. Nowka
IPC分类号： H03K19/003 , H03K19/017 , H03K19/094
CPC分类号： H03K19/01721 , H03K19/00361
摘要： A buffer/driver having large output devices for driving multiple loads is configured with three parallel paths. The first logic path is made of small devices and is configured to provide the logic function of the buffer without the ability to drive large loads. Second and third logic paths have the logic function of the first logic path up to the last inverting stage. The last inverting stage in each path is a single device for driving the logic states of the buffer output. The second and third logic paths have power-gating that allows the input to the pull-up and pull-down devices to float removing gate-leakage voltage stress. When the second and third logic paths are power-gated, the first logic path provides a keeper function to hold the logic state of the buffer output. The buffer may be an inverter, non-inverter, or provide a multiple input logic function.
摘要翻译：具有用于驱动多个负载的大输出装置的缓冲器/驱动器配置有三个并行路径。第一个逻辑路径由小型设备组成，并配置为提供缓冲区的逻辑功能，无需驱动大负载。第二和第三逻辑路径具有直到最后一个反相级的第一逻辑路径的逻辑功能。每个路径中的最后一个反相级是用于驱动缓冲区输出逻辑状态的单个器件。第二和第三逻辑路径具有电源门控，允许上拉和下拉器件的输入漂移去除栅极泄漏电压应力。当第二和第三逻辑路径是电源门控时，第一逻辑路径提供保持器功能以保持缓冲器输出的逻辑状态。缓冲器可以是逆变器，非逆变器，或提供多输入逻辑功能。

9. 发明授权

US08555119B2 Test structure for characterizing multi-port static random access memory and register file arrays 失效
标题翻译：用于表征多端口静态随机存取存储器和寄存器文件阵列的测试结构
公开(公告)号：US08555119B2
公开(公告)日：2013-10-08
申请号：US13459932
申请日：2012-04-30
申请人： Leland Chang , Jente B. Kuang , Robert K. Montoye , Hung C. Ngo , Kevin J. Nowka
发明人： Leland Chang , Jente B. Kuang , Robert K. Montoye , Hung C. Ngo , Kevin J. Nowka
IPC分类号： G11C29/00
CPC分类号： G11C8/16 , G11C29/32 , G11C29/50 , G11C29/50012
摘要： A test structure for characterizing a production static random access memory (SRAM) array. The test structure includes a characterization circuit having multiple memory cell columns connected in series to form a ring configuration. The characterization circuit is fabricated on a wafer substrate in common with and proximate to a production SRAM array. The characterization circuit preferably includes SRAM cells having a circuit topology substantially identical to the circuit topology of memory cells within the production SRAM array. In one embodiment, the test structure is utilized for characterizing a multi-port memory array and includes multiple memory cell columns connected in series to form a ring oscillator characterization circuit. Each cell column in the characterization circuit includes multiple SRAM cells each having a latching node and multiple data path access nodes. Selection control circuitry selectively enables the multiple data path access nodes for the SRAM cells within the characterization circuit.
摘要翻译：用于表征生产静态随机存取存储器（SRAM）阵列的测试结构。测试结构包括具有串联连接的多个存储单元列的表征电路，以形成环形结构。表征电路在与生产SRAM阵列相同并且靠近生产SRAM阵列的晶片衬底上制造。表征电路优选地包括具有与生产SRAM阵列内的存储器单元的电路拓扑基本相同的电路拓扑的SRAM单元。在一个实施例中，测试结构用于表征多端口存储器阵列，并且包括串联连接的多个存储单元列，以形成环形振荡器表征电路。表征电路中的每个单元列包括多个具有锁存节点和多个数据路径接入节点的SRAM单元。选择控制电路选择性地启用表征电路内的SRAM单元的多个数据路径接入节点。

10. 发明授权

US08261138B2 Test structure for characterizing multi-port static random access memory and register file arrays 有权
标题翻译：用于表征多端口静态随机存取存储器和寄存器文件阵列的测试结构
公开(公告)号：US08261138B2
公开(公告)日：2012-09-04
申请号：US11552158
申请日：2006-10-24
申请人： Leland Chang , Jente B. Kuang , Robert K. Montoye , Hung C. Ngo , Kevin J. Nowka
发明人： Leland Chang , Jente B. Kuang , Robert K. Montoye , Hung C. Ngo , Kevin J. Nowka
IPC分类号： G11C29/00
CPC分类号： G11C8/16 , G11C29/32 , G11C29/50 , G11C29/50012
摘要： A test structure for characterizing a production static random access memory (SRAM) array. The test structure includes a characterization circuit having multiple memory cell columns connected in series to form a ring configuration. The characterization circuit is fabricated on a wafer substrate in common with and proximate to a production SRAM array. The characterization circuit preferably includes SRAM cells having a circuit topology substantially identical to the circuit topology of memory cells within the production SRAM array. In one embodiment, the test structure is utilized for characterizing a multi-port memory array and includes multiple memory cell columns connected in series to form a ring oscillator characterization circuit. Each cell column in the characterization circuit includes multiple SRAM cells each having a latching node and multiple data path access nodes. Selection control circuitry selectively enables the multiple data path access nodes for the SRAM cells within the characterization circuit.
摘要翻译：用于表征生产静态随机存取存储器（SRAM）阵列的测试结构。测试结构包括具有串联连接的多个存储单元列的表征电路，以形成环形结构。表征电路在与生产SRAM阵列相同并且靠近生产SRAM阵列的晶片衬底上制造。表征电路优选地包括具有与生产SRAM阵列内的存储器单元的电路拓扑基本相同的电路拓扑的SRAM单元。在一个实施例中，测试结构用于表征多端口存储器阵列，并且包括串联连接的多个存储单元列，以形成环形振荡器表征电路。表征电路中的每个单元列包括多个具有锁存节点和多个数据路径接入节点的SRAM单元。选择控制电路选择性地启用表征电路内的SRAM单元的多个数据路径接入节点。

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