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    • 3. 发明申请
    • Low Power Consuming Semiconductor Device
    • 低功耗半导体器件
    • US20070272947A1
    • 2007-11-29
    • US11382487
    • 2006-05-10
    • Jeng-Huang WuShang-Chih HsiehYu-Wen Tsai
    • Jeng-Huang WuShang-Chih HsiehYu-Wen Tsai
    • H01L27/10
    • H01L27/0207
    • A low power consuming semiconductor device comprises a p substrate, a first semiconductor cell formed over the p substrate, a second semiconductor cell formed over the p substrate adjacent to the first semiconductor cell, and a tap cell for coupling a power pin to n-well structures of the first semiconductor cell and the second semiconductor cell, and for coupling a ground pin to the p substrate. A total height of the first semiconductor cell and the second semiconductor cell is twice a height of a standard semiconductor cell, and the height of the second semiconductor cell is adjusted according to the height of the first semiconductor cell.
    • 一种低功率消耗半导体器件包括ap衬底,形成在p衬底上的第一半导体单元,形成在与p型衬底相邻的第一半导体单元上的第二半导体单元,以及用于将电源引脚耦合到n阱结构的抽头单元 的第一半导体单元和第二半导体单元,并且用于将接地引脚耦合到p基板。 第一半导体单元和第二半导体单元的总高度是标准半导体单元的高度的两倍,并且根据第一半导体单元的高度来调整第二半导体单元的高度。
    • 4. 发明申请
    • DATA-RETENTION LATCH FOR SLEEP MODE APPLICATION
    • 休眠模式应用的数据保持锁
    • US20080303573A1
    • 2008-12-11
    • US11760871
    • 2007-06-11
    • Shang-Chih HsiehJeng-Huang Wu
    • Shang-Chih HsiehJeng-Huang Wu
    • H03K3/00H03K3/289
    • H03K3/0375
    • A latch includes a data input terminal for receiving a data signal; a data output terminal for outputting the data signal; a first control terminal for receiving a control signal to set or reset the data signal derived from the data output terminal; a sleep signal input terminal for receiving a sleep signal to determine a sleep mode; a first logic circuit having input terminals coupled to the data input terminal, the first control terminal and the sleep signal input terminal and an output terminal coupled to the data output terminal; and a second logic circuit having input terminals coupled to the data output terminal, the first control terminal and the sleep signal input terminal and an output terminal coupled to the data input terminal; wherein the first logic circuit or the second logic circuit ignores the first control signal in response to the sleep signal when the latch is operated in the sleep mode.
    • 锁存器包括用于接收数据信号的数据输入端; 数据输出端子,用于输出数据信号; 第一控制终端,用于接收控制信号以设置或重置从数据输出端导出的数据信号; 休眠信号输入端子,用于接收休眠信号以确定睡眠模式; 第一逻辑电路,其具有耦合到数据输入端子,第一控制端子和睡眠信号输入端子的输入端子和耦合到数据输出端子的输出端子; 以及第二逻辑电路,其具有耦合到所述数据输出端子,所述第一控制端子和所述睡眠信号输入端子的输入端子以及耦合到所述数据输入端子的输出端子; 其中当所述锁存器在所述睡眠模式下操作时,所述第一逻辑电路或所述第二逻辑电路响应于所述睡眠信号而忽略所述第一控制信号。
    • 7. 发明授权
    • Register circuit, scanning register circuit utilizing register circuits and scanning method thereof
    • 寄存器电路,利用寄存器电路的扫描寄存器电路及其扫描方法
    • US07512856B2
    • 2009-03-31
    • US11562424
    • 2006-11-22
    • Tzu-Pin ShenShang-Chih Hsieh
    • Tzu-Pin ShenShang-Chih Hsieh
    • G01R31/28
    • G01R31/318541
    • The present invention discloses a register circuit. The register circuit includes a latch circuit for latching an input data to generate an output data; an input signal selecting circuit, coupled to a non-test data and a test data respectively, for selectively outputting the non-test data or the test data as the input data; a control circuit, coupled to a driving clock, for controlling the latch circuit to latch the input data as the output data according to the driving clock; and a scanning circuit, coupled to the driving clock and the latch circuit, for scanning the output data of the latch circuit to generate a scanning data according to the driving clock.
    • 本发明公开了一种寄存器电路。 寄存器电路包括用于锁存输入数据以产生输出数据的锁存电路; 输入信号选择电路,分别耦合到非测试数据和测试数据,用于选择性地输出非测试数据或测试数据作为输入数据; 耦合到驱动时钟的控制电路,用于根据驱动时钟控制锁存电路锁存输入数据作为输出数据; 以及耦合到驱动时钟和锁存电路的扫描电路,用于扫描锁存电路的输出数据,以根据驱动时钟生成扫描数据。
    • 10. 发明授权
    • Device performance enhancement
    • 设备性能提升
    • US09142630B2
    • 2015-09-22
    • US13557479
    • 2012-07-25
    • Chang-Yu WuChih-Chiang ChangShang-Chih HsiehWei-Chih Hsieh
    • Chang-Yu WuChih-Chiang ChangShang-Chih HsiehWei-Chih Hsieh
    • H01L21/28H01L29/423H01L29/78
    • H01L29/4238H01L21/28123H01L29/78
    • Among other things, one or more techniques for enhancing device (e.g., transistor) performance are provided herein. In one embodiment, device performance is enhanced by forming an extended dummy region at an edge of a region of a device and forming an active region at a non-edge of the region. Limitations associated with semiconductor fabrication processing present in the extended dummy region more so than in non-edge regions. Accordingly, a device exhibiting enhanced performance is formed by connecting a gate to the active region, where the active region has a desired profile because it is comprised within a non-edge of the region. A dummy device (e.g., that may be less responsive) may be formed to include the extended dummy region, where the extended dummy region has a less than desired profile due to limitations associated with semiconductor fabrication processing, for example.
    • 除此之外,本文提供了用于增强器件(例如,晶体管)性能的一种或多种技术。 在一个实施例中,通过在器件的区域的边缘处形成延伸的虚拟区域并在该区域的非边缘处形成有源区域来增强器件性能。 与非边缘区域相比,扩展虚拟区域中存在与半导体制造处理相关的限制。 因此,通过将栅极连接到有源区域来形成表现出增强的性能的器件,其中有源区域具有期望的形状,因为它包括在该区域的非边缘内。 例如,由于与半导体制造处理相关的限制,可以形成虚拟设备(例如,可能较不响应的)以包括扩展的虚拟区域,其中扩展的虚拟区域具有小于期望的轮廓。