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    • 1. 发明授权
    • Integrated circuit device defect detection method and apparatus employing light emission imaging
    • 采用发光成像的集成电路器件缺陷检测方法和装置
    • US06650130B1
    • 2003-11-18
    • US09386572
    • 1999-08-31
    • Jeffrey A. KashPhillip J. NighDavid P. Vallet
    • Jeffrey A. KashPhillip J. NighDavid P. Vallet
    • G01R31303
    • G01R31/311
    • A method of and apparatus (10) for detecting one or more defects (130) in a plurality of chips (110) on a wafer (40). The method comprises a first step of simultaneously providing electrical power to the plurality of chips, thereby generating one or more light signals (120) corresponding to the one or more defects in the plurality of chips. The second step is simultaneously forming an image (150) of the plurality of chips so as to simultaneously detect the one or more light signals. The apparatus (10) for carrying out the method comprises electrical probes (30) for providing electrical power to the plurality of chips, a detector (60) to detect the one or more light signals emitted by the chips as a result of electrical power interacting with the one or more defects, and an imaging system (50) arranged so as to form an image of the plurality of chips, including the light signals, onto the detection surface (64).
    • 一种用于检测晶片(40)上的多个芯片(110)中的一个或多个缺陷(130)的方法和装置(10)。 该方法包括同时向多个芯片提供电力的第一步骤,从而产生对应于多个芯片中的一个或多个缺陷的一个或多个光信号(120)。 第二步骤同时形成多个芯片的图像(150),以便同时检测一个或多个光信号。 用于执行该方法的装置(10)包括用于向多个芯片提供电力的电探测器(30),检测器(60),用于检测由于电力相互作用而由芯片发射的一个或多个光信号 具有一个或多个缺陷,以及成像系统(50),被布置成在检测表面(64)上形成包括光信号的多个芯片的图像。
    • 8. 发明授权
    • Wavelength-selective devices using silicon-on-insulator
    • 使用绝缘体上硅的波长选择器件
    • US5559912A
    • 1996-09-24
    • US529933
    • 1995-09-15
    • Farid AgahiBardia PezeshkiJeffrey A. KashJeffrey J. Welser
    • Farid AgahiBardia PezeshkiJeffrey A. KashJeffrey J. Welser
    • G02B6/00G02B6/12G02F1/313H01L31/0232H01L31/10G02B6/26H04J14/02
    • G02B6/12007G02F1/3133
    • This invention describes how commercial silicon-on-insulator material can be used to fabricate both wavelength filters and wavelength-selective photodetectors. The silicon-on-insulator substrates have a buried silicon dioxide layer and a thin top silicon layer and are manufactured for high speed electonics applications. However, in this invention, the thin silicon layer is used as the core of a waveguide and the buried silicon dioxide as a lower cladding region. Another cladding layer and a low index waveguide is fabricated on the commercial substrate to form an asymmetric waveguide coupler structure. The added low index waveguide and the original thin silicon layer form the two waveguides of the coupler. Since the the two waveguide materials have very different indices of refraction, they are only phase-matched at one wavelength. Thus for a given thickness of materials, only one wavelength couples between the two waveguides. By adding an absorptive layer in the silicon waveguide and electrical contacts, wavelength sensitive photodetection is obtained. The buried insulator layer is the key to device operation, providing a very low index buried cladding region.
    • 本发明描述了商业硅绝缘体材料如何用于制造波长滤波器和波长选择性光电检测器。 绝缘体上硅衬底具有埋置的二氧化硅层和薄的顶部硅层,并且被制造用于高速电子学应用。 然而,在本发明中,薄硅层用作波导的核心,埋入的二氧化硅用作下部包层区域。 在商业基板上制造另一包层和低折射率波导以形成非对称波导耦合器结构。 添加的低折射率波导和原始薄硅层形成耦合器的两个波导。 由于两个波导材料具有非常不同的折射率,它们仅在一个波长处相位匹配。 因此,对于给定厚度的材料,在两个波导之间仅耦合一个波长。 通过在硅波导和电触点中添加吸收层,获得波长敏感的光电检测。 掩埋绝缘体层是器件操作的关键,提供了非常低折射率的掩埋包层区域。