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    • 4. 发明授权
    • Reference voltage generator for reading a ROM cell in an integrated
RAM/ROM memory device
    • 用于读取集成RAM / ROM存储器件中的ROM单元的参考电压发生器
    • US6016277A
    • 2000-01-18
    • US884581
    • 1997-06-27
    • George M. AnselJeffery S. HuntSatish SaripellaSudhaker Reddy AnumulaAjay Srikrishna
    • George M. AnselJeffery S. HuntSatish SaripellaSudhaker Reddy AnumulaAjay Srikrishna
    • G11C11/00G11C7/06
    • G11C11/005
    • A reference voltage generator may include an input for receiving a first voltage for input to a sense amp. The reference voltage generator may also include an output for outputting a second voltage for input to the sense amp. The second voltage is influenced by the first voltage. Alternatively, a reference voltage generator may include a first input for receiving a first voltage on a first bitline. The reference voltage generator may also include a first output for outputting a second voltage on a second bitline. The second voltage is influenced by the first voltage. Alternatively, a reference voltage generator may include a first input for receiving a first voltage on a first transmission busline. The voltage generator may also include a first output for outputting a second voltage on a second transmission busline. The second voltage is influenced by the first voltage.
    • 参考电压发生器可以包括用于接收用于输入到感测放大器的第一电压的输入端。 参考电压发生器还可以包括用于输出用于输入到感测放大器的第二电压的输出。 第二电压受第一电压的影响。 或者,参考电压发生器可以包括用于在第一位线上接收第一电压的第一输入。 参考电压发生器还可以包括用于在第二位线上输出第二电压的第一输出。 第二电压受第一电压的影响。 或者,参考电压发生器可以包括用于在第一传输总线上接收第一电压的第一输入。 电压发生器还可以包括用于在第二传输总线上输出第二电压的第一输出。 第二电压受第一电压的影响。
    • 5. 发明授权
    • Read only/random access memory architecture and methods for operating
same
    • 只读/随机访问存储器架构和操作方法
    • US5880999A
    • 1999-03-09
    • US884561
    • 1997-06-27
    • George M. AnselJeffery S. HuntSatish SaripellaSudhaker Reddy AnumulaAjay Srikrishna
    • George M. AnselJeffery S. HuntSatish SaripellaSudhaker Reddy AnumulaAjay Srikrishna
    • G11C11/00G11C16/04
    • G11C11/005
    • A memory device includes a random access memory (RAM) cell accessible through a RAM wordline and coupled between first and second bitlines; a read only memory (ROM) cell accessible through a ROM wordline and having an output coupled to the first bitline and an input configured to receive a first voltage signal; and a reference voltage generator having a first input coupled to the first bitline, a second input configured to receive the first voltage signal, and an output coupled to the second bitline. The memory device may further include a bitline load having an output coupled to the first bitline. A virtual ground driver configured to produce the first voltage signal may be coupled to the input of the read only memory cell. Further, column select pass gates configured to be under the control of a logic signal and having a first input coupled to the first bitline, a second input coupled to the second bitline, a first output and a second output may be provided. A sense amplifier having a first input coupled to the first output of the column select pass gates and a second input coupled to the second output of the column select pass gates may be included in the memory device. The memory device may be read by modulating a first voltage input to the sense amplifier using a second voltage input to the sense amplifier.
    • 存储器件包括通过RAM字线可访问并耦合在第一和第二位线之间的随机存取存储器(RAM)单元; 只读存储器(ROM)单元,可通过ROM字线访问并且具有耦合到第一位线的输出和被配置为接收第一电压信号的输入; 以及参考电压发生器,其具有耦合到第一位线的第一输入,被配置为接收第一电压信号的第二输入和耦合到第二位线的输出。 存储器件还可以包括具有耦合到第一位线的输出的位线负载。 配置为产生第一电压信号的虚拟接地驱动器可以耦合到只读存储器单元的输入。 此外,列选择通道门被配置为处于逻辑信号的控制下,并且具有耦合到第一位线的第一输入,耦合到第二位线的第二输入,第一输出和第二输出。 具有耦合到列选择通过门的第一输出的第一输入和耦合到列选择通道的第二输出的第二输入的读出放大器可以包括在存储器件中。 可以通过使用输入到读出放大器的第二电压调制对读出放大器的第一电压输入来读取存储器件。
    • 8. 发明授权
    • Method and apparatus for learn and related operations in network search engine
    • 网络搜索引擎中学习和相关操作的方法和装置
    • US07451267B1
    • 2008-11-11
    • US10948050
    • 2004-09-22
    • Srinivasan VenkatacharyAjay SrikrishnaJagadeesan Rajamanickam
    • Srinivasan VenkatacharyAjay SrikrishnaJagadeesan Rajamanickam
    • G06F12/00
    • G11C15/00
    • A search engine method and apparatus can store and update status information for each entry of a content addressable memory (CAM) array, for a learn operation, or the like. A search engine can include a status memory block external to and independent of the CAM array. A status memory block (800) can include a number of memory sections (806-0 to 806-2) that each includes a number of bit locations for storing a free/not-free status of CAM entries in a hierarchical fashion. Corresponding control sections (808-0 to 808-2) can include priority encoders (812-0 to 812-2) that determine a first free element in a memory section for a next hierarchical level, as well as status aggregation logic (814-0 to 814-2) that can generate an aggregated status that is propagated to a previous hierarchical level.
    • 搜索引擎方法和装置可以存储和更新用于学习操作等的内容可寻址存储器(CAM)阵列的每个条目的状态信息。 搜索引擎可以包括外部并独立于CAM阵列的状态存储器块。 状态存储器块(800)可以包括多个存储器部分(806-0至806-2),每个存储器部分包括用于以分级方式存储CAM条目的空闲/不自由状态的多个位位置。 相应的控制部分(808-0至808-2)可以包括确定用于下一层级的存储器部分中的第一空闲元素的优先编码器(812-0至812-2)以及状态聚合逻辑(814- 0到814-2),其可以生成被传播到先前分层级的聚合状态。