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1. 发明授权

US07072230B2 Method and apparatus for standby power reduction in semiconductor devices 有权
公开(公告)号：US07072230B2
公开(公告)日：2006-07-04
申请号：US11088092
申请日：2005-03-23
申请人： Jeff Koelling , John Schreck , Jon Morris , Rishad Omer
发明人： Jeff Koelling , John Schreck , Jon Morris , Rishad Omer
IPC分类号： G11C7/00
CPC分类号： G11C8/08 , G11C11/4085 , G11C2207/2227
摘要： A word line driver circuit for a semiconductor memory device. One or more transistors in the driver circuit are fabricated such that they are susceptible, under certain conditions, to gate-induced diode leakage (GIDL). One terminal of the transistors are coupled to a local supply node, which during standby conditions when the word line driver circuit is not driving a word line, is maintained at a voltage less than that of a global power supply node. In one embodiment, the local power supply node is coupled to the global power supply node by means of at least one decoupling transistor receiving a control signal at its gate and by a vt-connected transistor, such that the voltage on the local power supply node is maintained at a level not exceeding one transistor threshold voltage less than the global power supply node voltage when the decoupling transistor is off. When the decoupling transistor(s) is/are switched on prior to word line driving operation, the voltage on the local power supply node rises to the voltage of the global power supply node. Preferably, the control signal(s) controlling the decoupling transistor(s) are, or are derived from, control signals generated for purposes other than controlling the decoupling transistor.

2. 发明申请

US20050162943A1 Method and apparatus for standby power reduction in semiconductor devices 有权
公开(公告)号：US20050162943A1
公开(公告)日：2005-07-28
申请号：US11088092
申请日：2005-03-23
申请人： Jeff Koelling , John Schreck , Jon Morris , Rishad Omer
发明人： Jeff Koelling , John Schreck , Jon Morris , Rishad Omer
IPC分类号： G11C8/08 , G11C11/408 , G11C7/00
CPC分类号： G11C8/08 , G11C11/4085 , G11C2207/2227
摘要： A word line driver circuit for a semiconductor memory device. One or more transistors in the driver circuit are fabricated such that they are susceptible, under certain conditions, to gate-induced diode leakage (GIDL). One terminal of the transistors are coupled to a local supply node, which during standby conditions when the word line driver circuit is not driving a word line, is maintained at a voltage less than that of a global power supply node. In one embodiment, the local power supply node is coupled to the global power supply node by means of at least one decoupling transistor receiving a control signal at its gate and by a vt-connected transistor, such that the voltage on the local power supply node is maintained at a level not exceeding one transistor threshold voltage less than the global power supply node voltage when the decoupling transistor is off. When the decoupling transistor(s) is/are switched on prior to word line driving operation, the voltage on the local power supply node rises to the voltage of the global power supply node. Preferably, the control signal(s) controlling the decoupling transistor(s) are, or are derived from, control signals generated for purposes other than controlling the decoupling transistor.

3. 发明申请

US20050030819A1 Method and apparatus for standby power reduction in semiconductor devices 有权
公开(公告)号：US20050030819A1
公开(公告)日：2005-02-10
申请号：US10932542
申请日：2004-09-02
申请人： Jeff Koelling , John Schreck , Jon Morris , Rishad Omer
发明人： Jeff Koelling , John Schreck , Jon Morris , Rishad Omer
IPC分类号： G11C8/08 , G11C11/408 , G11C7/00
CPC分类号： G11C8/08 , G11C11/4085 , G11C2207/2227
摘要： A word line driver circuit for a semiconductor memory device. One or more transistors in the driver circuit are fabricated such that they are susceptible, under certain conditions, to gate-induced diode leakage (GIDL). One terminal of the transistors are coupled to a local supply node, which during standby conditions when the word line driver circuit is not driving a word line, is maintained at a voltage less than that of a global power supply node. In one embodiment, the local power supply node is coupled to the global power supply node by means of at least one decoupling transistor receiving a control signal at its gate and by a vt-connected transistor, such that the voltage on the local power supply node is maintained at a level not exceeding one transistor threshold voltage less than the global power supply node voltage when the decoupling transistor is off. When the decoupling transistor(s) is/are switched on prior to word line driving operation, the voltage on the local power supply node rises to the voltage of the global power supply node. Preferably, the control signal(s) controlling the decoupling transistor(s) are, or are derived from, control signals generated for purposes other than controlling the decoupling transistor.

4. 发明授权

US06873562B2 Method and apparatus for standby power reduction in semiconductor devices 有权
标题翻译：用于半导体器件中待机功率降低的方法和装置
公开(公告)号：US06873562B2
公开(公告)日：2005-03-29
申请号：US10932542
申请日：2004-09-02
申请人： Jeff Koelling , John Schreck , Jon Morris , Rishad Omer
发明人： Jeff Koelling , John Schreck , Jon Morris , Rishad Omer
IPC分类号： G11C8/08 , G11C11/408 , G11C5/14
CPC分类号： G11C8/08 , G11C11/4085 , G11C2207/2227
摘要： A word line driver circuit for a semiconductor memory device. One or more transistors in the driver circuit are fabricated such that they are susceptible, under certain conditions, to gate-induced diode leakage (GIDL). One terminal of the transistors are coupled to a local supply node, which during standby conditions when the word line driver circuit is not driving a word line, is maintained at a voltage less than that of a global power supply node. In one embodiment, the local power supply node is coupled to the global power supply node by means of at least one decoupling transistor receiving a control signal at its gate and by a vt-connected transistor, such that the voltage on the local power supply node is maintained at a level not exceeding one transistor threshold voltage less than the global power supply node voltage when the decoupling transistor is off. When the decoupling transistor(s) is/are switched on prior to word line driving operation, the voltage on the local power supply node rises to the voltage of the global power supply node. Preferably, the control signal(s) controlling the decoupling transistor(s) are, or are derived from, control signals generated for purposes other than controlling the decoupling transistor.
摘要翻译：一种用于半导体存储器件的字线驱动电路。驱动电路中的一个或多个晶体管被制造成使得它们在某些条件下易受到栅极引起的二极管泄漏（GIDL）的影响。晶体管的一个端子耦合到本地电源节点，当在字线驱动器电路未驱动字线的待机状态下，该端子被保持在比全局电源节点的电压小的电压。在一个实施例中，本地电源节点通过至少一个解耦晶体管耦合到全局电源节点，所述去耦晶体管在其栅极处接收控制信号，并由vt连接的晶体管接收，使得本地电源节点当去耦晶体管断开时，其维持在不超过一个晶体管阈值电压的电平，小于全局电源节点电压。当在字线驱动操作之前，去耦晶体管被接通时，局部电源节点上的电压上升到全局电源节点的电压。优选地，控制去耦晶体管的控制信号或者是从除了控制去耦晶体管之外的目的产生的控制信号导出的。

5. 发明授权

US06819621B2 Method and apparatus for standby power reduction in semiconductor devices 有权
标题翻译：用于半导体器件中待机功率降低的方法和装置
公开(公告)号：US06819621B2
公开(公告)日：2004-11-16
申请号：US10334408
申请日：2002-12-31
申请人： Jeff Koelling , John Schreck , Jon Morris , Rishad Omer
发明人： Jeff Koelling , John Schreck , Jon Morris , Rishad Omer
IPC分类号： G11C700
CPC分类号： G11C8/08 , G11C11/4085 , G11C2207/2227
摘要： A word line driver circuit for a semiconductor memory device. One or more transistors in the driver circuit are fabricated such that they are susceptible, under certain conditions, to gate-induced diode leakage (GIDL). One terminal of the transistors are coupled to a local supply node, which during standby conditions when the word line driver circuit is not driving a word line, is maintained at a voltage less than that of a global power supply node. In one embodiment, the local power supply node is coupled to the global power supply node by means of at least one decoupling transistor receiving a control signal at its gate and by a vt-connected transistor, such that the voltage on the local power supply node is maintained at a level not exceeding one transistor threshold voltage less than the global power supply node voltage when the decoupling transistor is off. When the decoupling transistor(s) is/are switched on prior to word line driving operation, the voltage on the local power supply node rises to the voltage of the global power supply node. Preferably, the control signal(s) controlling the decoupling transistor(s) are, or are derived from, control signals generated for purposes other than controlling the decoupling transistor.
摘要翻译：一种用于半导体存储器件的字线驱动电路。驱动电路中的一个或多个晶体管被制造成使得它们在某些条件下易受到栅极引起的二极管泄漏（GIDL）的影响。晶体管的一个端子耦合到本地电源节点，当在字线驱动器电路未驱动字线的待机状态下，该端子被保持在比全局电源节点的电压小的电压。在一个实施例中，本地电源节点通过至少一个解耦晶体管耦合到全局电源节点，所述去耦晶体管在其栅极处接收控制信号，并由vt连接的晶体管接收，使得本地电源节点当去耦晶体管断开时，其维持在不超过一个晶体管阈值电压的电平，小于全局电源节点电压。当在字线驱动操作之前，去耦晶体管被接通时，局部电源节点上的电压上升到全局电源节点的电压。优选地，控制去耦晶体管的控制信号或者是从除了控制去耦晶体管之外的目的产生的控制信号导出的。

6. 发明授权

US06512705B1 Method and apparatus for standby power reduction in semiconductor devices 有权
标题翻译：用于半导体器件中待机功率降低的方法和装置
公开(公告)号：US06512705B1
公开(公告)日：2003-01-28
申请号：US09989964
申请日：2001-11-21
申请人： Jeff Koelling , John Schreck , Jon Morris , Rishad Omer
发明人： Jeff Koelling , John Schreck , Jon Morris , Rishad Omer
IPC分类号： G11C700
CPC分类号： G11C8/08 , G11C11/4085 , G11C2207/2227
摘要： A word line driver circuit for a semiconductor memory device. One or more transistors in the driver circuit are fabricated such that they are susceptible, under certain conditions, to gate-induced diode leakage (GIDL). One terminal of the transistors are coupled to a local supply node, which during standby conditions when the word line driver circuit is not driving a word line, is maintained at a voltage less than that of a global power supply node. In one embodiment, the local power supply node is coupled to the global power supply node by means of at least one decoupling transistor receiving a control signal at its gate and by a vt-connected transistor, such that the voltage on the local power supply node is maintained at a level not exceeding one transistor threshold voltage less than the global power supply node voltage when the decoupling transistor is off. When the decoupling transistor(s) is/are switched on prior to word line driving operation, the voltage on the local power supply node rises to the voltage of the global power supply node. Preferably, the control signal(s) controlling the decoupling transistor(s) are, or are derived from, control signals generated for purposes other than controlling the decoupling transistor.
摘要翻译：一种用于半导体存储器件的字线驱动电路。驱动电路中的一个或多个晶体管被制造成使得它们在某些条件下易受到栅极引起的二极管泄漏（GIDL）的影响。晶体管的一个端子耦合到本地电源节点，当在字线驱动器电路未驱动字线的待机状态下，该端子被保持在比全局电源节点的电压小的电压。在一个实施例中，本地电源节点通过至少一个解耦晶体管耦合到全局电源节点，该去耦晶体管在其栅极处接收控制信号，并由vt连接的晶体管接收，使得本地电源节点当去耦晶体管断开时，其维持在不超过一个晶体管阈值电压的电平，小于全局电源节点电压。当在字线驱动操作之前，去耦晶体管被接通时，局部电源节点上的电压上升到全局电源节点的电压。优选地，控制去耦晶体管的控制信号或者是从除了控制去耦晶体管之外的目的产生的控制信号导出的。

7. 发明申请

US20140002667A1 Differential Infrared Imager for Gas Plume Detection 审中-公开
标题翻译：差分红外成像仪用于气体羽流检测
公开(公告)号：US20140002667A1
公开(公告)日：2014-01-02
申请号：US14001365
申请日：2012-03-12
申请人： Joseph M. Cheben , Yousheng Zeng , Jon Morris , Yanhua Ruan
发明人： Joseph M. Cheben , Yousheng Zeng , Jon Morris , Yanhua Ruan
IPC分类号： G01N21/31
CPC分类号： G01N21/3151 , G01N21/3518 , G01N2021/3522 , G01N2021/3531
摘要： Apparatus, systems, and methods autonomously detect a chemical plume. The system includes an apparatus for splitting a beam of electromagnetic radiation and feeding the split beam to at least two detectors, which are operably connected to a first bandpass filter and a second bandpass filter that passes a wavelength of electromagnetic radiation that is similar in magnitude but offset from the wavelengths passed by the first bandpass filter. The system further comprises an analysis system configured to analyze images from the at least two detectors, a processor, and a non-transitory, computer-readable medium comprising code configured to direct the processor to perform functions. Exemplary functions include comparing a plurality of deterministic features, a plurality of probabilistic features of objects, or both, from the at least two detectors and determining if a difference between the compared images represents a chemical plume.
摘要翻译：装置，系统和方法自主地检测化学羽流。该系统包括用于分离电磁辐射束并将分束输送到至少两个检测器的装置，该至少两个检测器可操作地连接到第一带通滤波器和第二带通滤波器，该滤波器通过在幅度上类似的电磁辐射波长偏离由第一带通滤波器通过的波长。该系统还包括被配置为分析来自至少两个检测器，处理器和非暂时的计算机可读介质的图像的分析系统，该介质包括被配置为引导处理器执行功能的代码。示例性功能包括从至少两个检测器比较多个确定性特征，多个对象的概率特征或两者，并且确定所比较的图像之间的差异是否表示化学羽流。

8. 发明申请

US20140002639A1 Autonomous Detection of Chemical Plumes 审中-公开
标题翻译：化学羽毛的自主检测
公开(公告)号：US20140002639A1
公开(公告)日：2014-01-02
申请号：US14001356
申请日：2012-03-12
申请人： Joseph M. Cheben , Yousheng Zeng , Jon Morris , Yanhua Ruan
发明人： Joseph M. Cheben , Yousheng Zeng , Jon Morris , Yanhua Ruan
IPC分类号： G06T7/20
CPC分类号： G08B21/14
摘要： Systems and methods for autonomously detecting a chemical plume are described. In a method for autonomously detecting a chemical plume, a plurality of images are obtained from a detection camera at least at a wavelength of light selected to be absorbed or emitted by a chemical species. The plurality of images is analyzed to identify changes in a deterministic feature, changes in a statistical feature, or both, between sequential images. A chemical plume is recognized based, at least in part, on the changes.
摘要翻译：描述了用于自主检测化学羽流的系统和方法。在用于自主检测化学羽流的方法中，至少在被选择被化学物种吸收或发射的光的波长处从检测照相机获得多个图像。分析多个图像以识别连续图像之间的确定性特征的变化，统计特征的变化或两者。至少部分地基于变化识别化学羽流。

9. 发明申请

US20080213736A1 METHOD AND APPARATUS FOR EMOTIONAL PROFILING 审中-公开
标题翻译：用于情感分析的方法和装置
公开(公告)号：US20080213736A1
公开(公告)日：2008-09-04
申请号：US11966679
申请日：2007-12-28
申请人： Jon Morris
发明人： Jon Morris
IPC分类号： G09B19/00
CPC分类号： G09B7/02
摘要： A method for emotional profiling comprises: obtaining, from plural respondents, non-verbal emotional response data, along with verbal responses; grouping the verbal responses according to the non-verbal emotional response data; and reporting the verbal and/or text-based responses by group. An apparatus for emotional profiling comprises: means for obtaining quantitative and/or qualitative emotional response data, along with verbal and/or text-based responses from participants; means for grouping response data and responses according to the quantitative and/or qualitative data; and means for reporting the verbal and/or text-based responses by group.
摘要翻译：情绪剖析的方法包括：从多个受访者获得非言语情绪反应数据以及口头答复; 根据非言语情绪反应数据对口头答复进行分组; 并按组进行口头和/或基于文本的回复。用于情绪剖析的装置包括：用于获得定量和/或定性情绪反应数据的手段，以及来自参与者的口头和/或基于文本的响应; 用于根据定量和/或定性数据对响应数据和响应进行分组的手段; 以及用于按组进行基于口头和/或基于文本的回复的方法。

10. 发明申请

US20060209328A1 Systems and methods that facilitate selective enablement of a device driver feature(s) and/or application(s) 审中-公开
标题翻译：便于选择性启用设备驱动程序功能和/或应用程序的系统和方法
公开(公告)号：US20060209328A1
公开(公告)日：2006-09-21
申请号：US11080856
申请日：2005-03-15
申请人： Eric Anderson , George Roussos , Jon Morris , Eugene Lin
发明人： Eric Anderson , George Roussos , Jon Morris , Eugene Lin
IPC分类号： G06F3/12
CPC分类号： G06F9/4411
摘要： The subject invention relates to enabling device drivers that support additional functionality that can be enabled to an operating system. A hardware manufacture can claim support for additional functionality in their device drivers, and such functionality can be verified and tagged during driver signing. When a device driver passes a corresponding test, the driver is digitally signed and the signature can include attributes indicating support for that functionality (e.g., features and applications). The systems and methods employ a querying mechanism that can search a device driver package for attributes and expose such attributes. The search can expose both trusted attributes and untrusted device driver properties. Exposed trusted attributes can be selectively enabled to provide corresponding features and/or applications. This can facilitate enabling aspects of hardware when corresponding drivers support such functionality and mitigate enabling an unsupported feature and/or an application. Untrusted properties can be manually enabled, for example, for testing purposes.
摘要翻译：本发明涉及支持能够对操作系统启用的附加功能的启用设备驱动程序。硬件制造商可以在其设备驱动程序中声明对附加功能的支持，并且可以在驱动程序签名期间验证和标记这些功能。当设备驱动程序通过相应的测试时，驱动程序被数字签名，并且签名可以包括表示支持该功能（例如特征和应用）的属性。系统和方法采用查询机制，可以搜索设备驱动程序包的属性并公开这些属性。搜索可以显示可信属性和不受信任的设备驱动程序属性。可以选择性地启用暴露的可信属性以提供对应的特征和/或应用。当相应的驱动程序支持这种功能并减轻启用不支持的功能和/或应用程序时，这可以促进硬件的启用方面。可以手动启用不受信任的属性，例如用于测试目的。

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