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1. 发明授权

US06787691B2 Microfabricated thermoelectric power-generation devices 失效
标题翻译：微型热电发电装置
公开(公告)号：US06787691B2
公开(公告)日：2004-09-07
申请号：US10146707
申请日：2002-05-14
申请人： Jean-Pierre Fleurial , Margaret A. Ryan , Alex Borshchevsky , Wayne Phillips , Elizabeth A. Kolawa , G. Jeffrey Snyder , Thierry Caillat , Thorsten Kascich , Peter Mueller
发明人： Jean-Pierre Fleurial , Margaret A. Ryan , Alex Borshchevsky , Wayne Phillips , Elizabeth A. Kolawa , G. Jeffrey Snyder , Thierry Caillat , Thorsten Kascich , Peter Mueller
IPC分类号： H01L3528
CPC分类号： H01L35/34 , H01L35/16 , H01L35/32
摘要： A device for generating power to run an electronic component. The device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with a high temperature region. During operation, heat flows from the high temperature region into the heat-conducting substrate, from which the heat flows into the electrical power generator. A thermoelectric material (e.g., a BiTe alloy-based film or other thermoelectric material) is placed in thermal contact with the heat-conducting substrate. A low temperature region is located on the side of the thermoelectric material opposite that of the high temperature region. The thermal gradient generates electrical power and drives an electrical component.
摘要翻译：一种用于产生运行电子部件的电力的装置。该装置包括与高温区域热接触设置的导热基板（例如由金刚石或另一高导热材料构成）。在运行期间，热量从高温区域流入导热基板，热量流入发电机。将热电材料（例如，BiTe合金基膜或其它热电材料）放置成与导热基板热接触。低温区域位于热电材料的与高温区域相反的一侧。热梯度产生电力并驱动电气部件。

2. 发明授权

US06388185B1 Microfabricated thermoelectric power-generation devices 有权
标题翻译：微型热电发电装置
公开(公告)号：US06388185B1
公开(公告)日：2002-05-14
申请号：US09198069
申请日：1998-11-23
申请人： Jean-Pierre Fleurial , Margaret A. Ryan , Alex Borshchevsky , Wayne Phillips , Elizabeth A. Kolawa , G. Jeffrey Snyder , Thierry Caillat , Thorsten Kascich , Peter Mueller
发明人： Jean-Pierre Fleurial , Margaret A. Ryan , Alex Borshchevsky , Wayne Phillips , Elizabeth A. Kolawa , G. Jeffrey Snyder , Thierry Caillat , Thorsten Kascich , Peter Mueller
IPC分类号： H01L3530
CPC分类号： H01L35/34 , H01L35/16 , H01L35/32
摘要： A device for generating power to run an electronic component. The device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with a high temperature region. During operation, heat flows from the high temperature region into the heat-conducting substrate, from which the heat flows into the electrical power generator. A thermoelectric material (e.g., a BiTe alloy-based film or other thermoelectric material) is placed in thermal contact with the heat-conducting substrate. A low temperature region is located on the side of the thermoelectric material opposite that of the high temperature region. The thermal gradient generates electrical power and drives an electrical component.
摘要翻译：一种用于产生运行电子部件的电力的装置。该装置包括与高温区域热接触设置的导热基板（例如由金刚石或另一高导热材料构成）。在运行期间，热量从高温区域流入导热基板，热量流入发电机。将热电材料（例如，BiTe合金基膜或其它热电材料）放置成与导热基板热接触。低温区域位于热电材料的与高温区域相反的一侧。热梯度产生电力并驱动电气部件。

3. 发明授权

US06660926B2 Thermoelectric devices based on materials with filled skutterudite structures 有权
标题翻译：基于具有填充方钴矿结构的材料的热电装置
公开(公告)号：US06660926B2
公开(公告)日：2003-12-09
申请号：US10007549
申请日：2001-11-06
申请人： Jean-Pierre Fleurial , Alex Borshchevsky , Thierry Caillat , Donald T. Morelli , Gregory P. Meisner
发明人： Jean-Pierre Fleurial , Alex Borshchevsky , Thierry Caillat , Donald T. Morelli , Gregory P. Meisner
IPC分类号： H01L3528
CPC分类号： H01L35/32 , H01L35/18 , H01L35/22
摘要： A class of thermoelectric compounds based on the skutterudite structure with heavy filling atoms in the empty octants and substituting transition metals and main-group atoms. High Seebeck coefficients and low thermal conductivities are achieved in combination with large electrical conductivities in these filled skutterudites for large ZT values. Substituting and filling methods are disclosed to synthesize skutterudite compositions with desired thermoelectric properties. A melting and/or sintering process in combination with powder metallurgy techniques is used to fabricate these new materials.
摘要翻译：一类基于方钴矿结构的热电化合物，在空的八分圆中具有重的填充原子，并且替代过渡金属和主族原子。高塞贝克系数和低热导率结合在这些填充的方程中用于大ZT值的大电导率。公开了替代和填充方法来合成具有所需热电性质的方钴矿组合物。使用与粉末冶金技术相结合的熔融和/或烧结方法来制造这些新材料。

4. 发明授权

US6069312A Thermoelectric materials with filled skutterudite structure for thermoelectric devices 失效
公开(公告)号：US6069312A
公开(公告)日：2000-05-30
申请号：US908814
申请日：1997-08-07
申请人： Jean-Pierre Fleurial , Alex Borshchevsky , Thierry Caillat , Donald T. Morelli , Gregory P. Meisner
发明人： Jean-Pierre Fleurial , Alex Borshchevsky , Thierry Caillat , Donald T. Morelli , Gregory P. Meisner
IPC分类号： H01L35/18 , H01L35/22 , H01L35/32 , H01L35/12
CPC分类号： H01L35/32 , H01L35/18 , H01L35/22
摘要： A class of thermoelectric compounds based on the skutterudite structure with heavy filling atoms in the empty octants and substituting transition metals and main-group atoms. High Seebeck coefficients and low thermal conductivities are achieved in combination with large electrical conductivities in these filled skutterudites for large ZT values. Substituting and filling methods are disclosed to synthesize skutterudite compositions with desired thermoelectric properties. A melting and/or sintering process in combination with powder metallurgy techniques is used to fabricate these new materials.

5. 发明授权

US06342668B1 Thermoelectric materials with filled skutterudite structure for thermoelectric devices 失效
标题翻译：用于热电装置的具有填充方钴矿结构的热电材料
公开(公告)号：US06342668B1
公开(公告)日：2002-01-29
申请号：US09478976
申请日：2000-01-06
申请人： Jean-Pierre Fleurial , Alex Borshchevsky , Thierry Caillat , Donald T. Morelli , Gregory P. Meisner
发明人： Jean-Pierre Fleurial , Alex Borshchevsky , Thierry Caillat , Donald T. Morelli , Gregory P. Meisner
IPC分类号： H01L3534
CPC分类号： H01L35/32 , H01L35/18 , H01L35/22
摘要： A class of thermoelectric compounds based on the skutterudite structure with heavy filling atoms in the empty octants and substituting transition metals and main-group atoms. High Seebeck coefficients and low thermal conductivities are achieved in combination with large electrical conductivities in these filled skutterudites for large ZT values. Substituting and filling methods are disclosed to synthesize skutterudite compositions with desired thermoelectric properties. A melting and/or sintering process in combination with powder metallurgy techniques is used to fabricate these new materials.
摘要翻译：一类基于方钴矿结构的热电化合物，在空的八分圆中具有重的填充原子，并且替代过渡金属和主族原子。高塞贝克系数和低热导率结合在这些填充的方程中用于大ZT值的大电导率。公开了替代和填充方法来合成具有所需热电性质的方钴矿组合物。使用与粉末冶金技术相结合的熔融和/或烧结方法来制造这些新材料。

6. 发明授权

US06563039B2 Thermoelectric unicouple used for power generation 有权
公开(公告)号：US06563039B2
公开(公告)日：2003-05-13
申请号：US09765062
申请日：2001-01-17
申请人： Thierry Caillat , Jean-Pierre Fleurial , Alexander Borshchevsky , G. Jeffrey Snyder , Andrew Zoltan , Leslie Zoltan
发明人： Thierry Caillat , Jean-Pierre Fleurial , Alexander Borshchevsky , G. Jeffrey Snyder , Andrew Zoltan , Leslie Zoltan
IPC分类号： H01L3528
CPC分类号： H01L35/04 , H01L35/18 , H01L35/32
摘要： A high-efficiency thermoelectric unicouple is used for power generation. The unicouple is formed with a plurality of legs, each leg formed of a plurality of segments. The legs are formed in a way that equalized certain aspects of the different segments. Different materials are also described.

7. 发明授权

US07480984B1 Method of suppressing sublimation in advanced thermoelectric devices 失效
标题翻译：抑制先进热电装置升华的方法
公开(公告)号：US07480984B1
公开(公告)日：2009-01-27
申请号：US10863835
申请日：2004-06-07
申请人： Jeffrey S. Sakamoto , Thierry Caillat , Jean-Pierre Fleurial , G. Jeffrey Snyder
发明人： Jeffrey S. Sakamoto , Thierry Caillat , Jean-Pierre Fleurial , G. Jeffrey Snyder
IPC分类号： H05B3/00
CPC分类号： H05B3/46 , H01L35/18 , H01L35/34 , Y10T29/49083 , Y10T29/49087 , Y10T29/49096 , Y10T29/49117
摘要： A method of applying a physical barrier to suppress thermal decomposition near a surface of a thermoelectric material including applying a continuous metal foil to a predetermined portion of the surface of the thermoelectric material, physically binding the continuous metal foil to the surface of the thermoelectric material using a binding member, and heating in a predetermined atmosphere the applied and physically bound continuous metal foil and the thermoelectric material to a sufficient temperature in order to promote bonding between the continuous metal foil and the surface of the thermoelectric material. The continuous metal foil forms a physical barrier to enclose a predetermined portion of the surface. Thermal decomposition is suppressed at the surface of the thermoelectric material enclosed by the physical barrier when the thermoelectric element is in operation.
摘要翻译：一种施加物理屏障来抑制热电材料表面附近的热分解的方法，包括在热电材料的表面的预定部分上施加连续的金属箔，将连续的金属箔与热电材料的表面物理地结合在一起，使用在预定的气氛中将所施加和物理结合的连续金属箔和热电材料加热到足够的温度，以促进连续金属箔与热电材料表面之间的结合。连续金属箔形成物理屏障以封闭表面的预定部分。当热电元件工作时，由物理屏障包围的热电材料的表面抑制热分解。

8. 发明授权

US06753469B1 Very high efficiency, miniaturized, long-lived alpha particle power source using diamond devices for extreme space environments 失效
标题翻译：非常高的效率，小型化，长寿命的α粒子电源，在极端空间环境中使用金刚石设备
公开(公告)号：US06753469B1
公开(公告)日：2004-06-22
申请号：US10214486
申请日：2002-08-05
申请人： Elizabeth A. Kolawa , Jagdishbhai U. Patel , Jean-Pierre Fleurial
发明人： Elizabeth A. Kolawa , Jagdishbhai U. Patel , Jean-Pierre Fleurial
IPC分类号： H01L3104
CPC分类号： G21H1/04
摘要： A power source converts &agr;-particle energy into electricity by coulomb collision in doped diamond films. Alpha particle decay from curium-244 creates electron-hole pairs by freeing electrons and holes inside the crystal lattice in N- and P-doped diamond films. Ohmic contacts provide electrical connection to an electronic device. Due to the built-in electric field at the rectifying junction across the N- and P-doped diamond films, the free electrons are constrained to traveling in generally one direction. This one direction then supplies electrons in a manner similar to that of a battery. The radioactive curium layer may be disposed on diamond films for even distribution of &agr;-particle radiation. The resulting power source may be mounted on a diamond substrate that serves to insulate structures below the diamond substrate from &agr;-particle emission. Additional insulation or isolation may be provided in order to prevent damage from &agr;-particle collision. N-doped silicon may be used instead of N-doped diamond.
摘要翻译：电源通过掺杂金刚石膜中的库仑碰撞将α粒子能量转换为电能。通过在N和P掺杂的金刚石膜中释放晶格内部的电子和空穴，从ium 244中的α粒子衰变产生电子 - 空穴对。欧姆接触器提供与电子设备的电连接。由于在N和P掺杂的金刚石膜上的整流结的内置电场，自由电子被限制为在大致一个方向上行进。然后，该方向以与电池类似的方式提供电子。放射性ium层可以设置在金刚石膜上以均匀分布α粒子辐射。所得到的电源可以安装在金刚石基底上，其用于将金刚石基底以下的结构与α-粒子发射绝缘。可以提供额外的绝缘或隔离以防止α粒子碰撞造成的损坏。可以使用N掺杂的硅代替N掺杂的金刚石。

9. 发明授权

US06942728B2 High performance p-type thermoelectric materials and methods of preparation 有权
标题翻译：高性能p型热电材料及其制备方法
公开(公告)号：US06942728B2
公开(公告)日：2005-09-13
申请号：US10262807
申请日：2002-10-01
申请人： Thierry Caillat , Alexander Borshchevsky , Jean-Pierre Fleurial
发明人： Thierry Caillat , Alexander Borshchevsky , Jean-Pierre Fleurial
IPC分类号： C22C1/04 , C22C12/00 , G01K7/04 , H01L35/16 , H01L35/18 , H01L35/34 , C30B29/48
CPC分类号： H01L35/18 , B22F2998/10 , B22F2999/00 , C22C1/0491 , C22C12/00 , G01K7/04 , H01L35/16 , H01L35/34 , B22F1/0085 , B22F9/04 , B22F3/14
摘要： The present invention is embodied in high performance p-type thermoelectric materials having enhanced thermoelectric properties and the methods of preparing such materials. In one aspect of the invention, p-type semiconductors of formula Zn4−xAxSb3−yBy wherein 0≦x≦4, A is a transition metal, B is a pnicogen, and 0≦y≦3 are formed for use in manufacturing thermoelectric devices with substantially enhanced operating characteristics and improved efficiency. Two methods of preparing p-type Zn4Sb3 and related alloys of the present invention include a crystal growth method and a powder metallurgy method.
摘要翻译：本发明体现在具有增强的热电性能的高性能p型热电材料和制备这种材料的方法中。在本发明的一个方面，式Zn 4-x A x Sb 3-y B y y的p型半导体，其中0 <= x <= 4，A是过渡金属，B是pnicogen，并且形成0 <= y <= 3，用于制造具有显着增强的操作特性和提高效率的热电器件。制备本发明的p型Zn 4 Sb 3 O 3和相关合金的两种方法包括晶体生长法和粉末冶金法。

10. 发明授权

US5831286A High mobility p-type transition metal tri-antimonide and related skutterudite compounds and alloys for power semiconducting devices 失效
标题翻译：高迁移率p型过渡金属三锑化物和相关方钴矿化合物和用于功率半导体器件的合金
公开(公告)号：US5831286A
公开(公告)日：1998-11-03
申请号：US643914
申请日：1996-05-07
申请人： Jean-Pierre Fleurial , Thierry Caillat , Alexander Borshchevsky , Jan W. Vandersande
发明人： Jean-Pierre Fleurial , Thierry Caillat , Alexander Borshchevsky , Jan W. Vandersande
IPC分类号： H01L29/24 , H01L31/0256
CPC分类号： H01L29/24
摘要： Transition metals (T) of Group VIII (Co, Rh and Ir) have been prepared as semiconductor alloys with Sb, P, and As, having the general formula TX, wherein X is Sb.sub.3, P.sub.3, or As.sub.3. The skutterudite-type crystal lattice structure of these semiconductor alloys and their enhanced semiconductor properties results in semiconductor materials which may be used in the fabrication of power semiconductor devices to substantially improve the efficiency of the resulting semiconductor device. Semiconductor alloys having the desired skutterudite-type crystal lattice structure may be prepared in accordance with the present invention by using vertical gradient freeze techniques, liquid-solid phase sintering techniques, low temperature powder sintering and/or hot-pressing.
摘要翻译：已经制备了第Ⅷ族（Co，Rh和Ir）的金属过渡金属（Co，Rh和Ir），其具有通式为Sb TX with with with with with with with with with with with with with with with with with with with with or or or or or 这些半导体合金的方钴矿型晶格结构及其增强的半导体特性产生可用于制造功率半导体器件的半导体材料，以显着提高所得半导体器件的效率。具有期望的方钴矿型晶格结构的半导体合金可以通过使用垂直梯度冷冻技术，液相 - 固相烧结技术，低温粉末烧结和/或热压法，根据本发明制备。

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