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    • 1. 发明申请
    • RF-BIASED CAPACITIVELY-COUPLED ELECTROSTATIC (RFB-CCE) PROBE ARRANGEMENT FOR CHARACTERIZING A FILM IN A PLASMA PROCESSING CHAMBER
    • 用于表征等离子体处理室中的薄膜的RF偏置电容耦合静电(RFB-CCE)探针布置
    • US20100007362A1
    • 2010-01-14
    • US12498955
    • 2009-07-07
    • Jean-Paul BoothLuc AlbaredeJung KimDouglas Keil
    • Jean-Paul BoothLuc AlbaredeJung KimDouglas Keil
    • G01R27/26G01R31/28
    • H01J37/32935H01L21/67069H01L22/14Y10T29/49004
    • A method for characterizing deposited film on a substrate within a processing chamber during processing is provided. The method includes determining voltage-current characteristic for a probe head when measuring capacitor is set at a first capacitance value. The method also includes applying RF train to the probe head when measuring capacitor is set at a capacitance value greater than first capacitance value. The method further includes providing an initial resistance value and an initial capacitance value for the deposited film. The method yet also includes employing initial resistance value, initial capacitance value, and voltage-current characteristic to generate simulated voltage-time curve. The method yet further includes determining measured voltage-time curve, which represents potential drop across the deposited film for one RF train. The method more over includes comparing the two curves. If the difference is less than predefined threshold, employ initial resistance value and initial capacitance for characterizing the deposited film.
    • 提供了一种在处理期间在处理室内的基板上表征沉积膜的方法。 该方法包括当测量电容器被设置在第一电容值时确定探头的电压 - 电流特性。 该方法还包括当测量电容器被设置为大于第一电容值的电容值时,将RF串施加到探头。 该方法还包括为沉积膜提供初始电阻值和初始电容值。 该方法还包括采用初始电阻值,初始电容值和电压 - 电流特性来产生模拟电压 - 时间曲线。 该方法还包括确定测量的电压时间曲线,其表示用于一个RF火车的沉积膜的电位降。 更多的方法包括比较两条曲线。 如果差值小于预定阈值,则使用初始电阻值和初始电容来表征沉积膜。
    • 2. 发明授权
    • RF-biased capacitively-coupled electrostatic (RFB-CCE) probe arrangement for characterizing a film in a plasma processing chamber
    • 用于表征等离子体处理室中的膜的RF偏置电容耦合静电(RFB-CCE)探针装置
    • US08164353B2
    • 2012-04-24
    • US12498955
    • 2009-07-07
    • Jean-Paul BoothLuc AlbaredeJung KimDouglas Keil
    • Jean-Paul BoothLuc AlbaredeJung KimDouglas Keil
    • G01R27/26G01R31/08
    • H01J37/32935H01L21/67069H01L22/14Y10T29/49004
    • A method for characterizing deposited film on a substrate within a processing chamber during processing is provided. The method includes determining voltage-current characteristic for a probe head when measuring capacitor is set at a first capacitance value. The method also includes applying RF train to the probe head when measuring capacitor is set at a capacitance value greater than first capacitance value. The method further includes providing an initial resistance value and an initial capacitance value for the deposited film. The method yet also includes employing initial resistance value, initial capacitance value, and voltage-current characteristic to generate simulated voltage-time curve. The method yet further includes determining measured voltage-time curve, which represents potential drop across the deposited film for one RF train. The method more over includes comparing the two curves. If the difference is less than predefined threshold, employ initial resistance value and initial capacitance for characterizing the deposited film.
    • 提供了一种在处理期间在处理室内的基板上表征沉积膜的方法。 该方法包括当测量电容器被设置在第一电容值时确定探头的电压 - 电流特性。 该方法还包括当测量电容器被设置为大于第一电容值的电容值时,将RF串施加到探头。 该方法还包括为沉积膜提供初始电阻值和初始电容值。 该方法还包括采用初始电阻值,初始电容值和电压 - 电流特性来产生模拟电压 - 时间曲线。 该方法还包括确定测量的电压时间曲线,其表示用于一个RF火车的沉积膜的电位降。 更多的方法包括比较两条曲线。 如果差值小于预定阈值,则使用初始电阻值和初始电容来表征沉积膜。
    • 6. 发明申请
    • ARRANGEMENT FOR IDENTIFYING UNCONTROLLED EVENTS AT THE PROCESS MODULE LEVEL AND METHODS THEREOF
    • 在过程模块级别识别非受控事件的安排及其方法
    • US20100332014A1
    • 2010-12-30
    • US12826568
    • 2010-06-29
    • Luc AlbaredeVijayakumar C. Venugopal
    • Luc AlbaredeVijayakumar C. Venugopal
    • G06F19/00
    • H01J37/32935G05B2219/31202
    • A method for detecting an in-situ fast transient event within a processing chamber during substrate processing is provided. The method includes a set of sensors comparing a data set to a set of criteria (in-situ fast transient events) to determine if the first data set includes a potential in-situ fast transient event. If the first data set includes the potential in-situ fast transient event, the method also includes saving an electrical signature that occurs in a time period during which the potential in-situ fast transient event occurs. The method further includes comparing the electrical signature against a set of stored arc signatures. If a match is determined, the method yet also includes classifying the electrical signature as a first in-situ fast transient event and determining a severity level for the first in-situ fast transient event based on a predefined set of threshold ranges.
    • 提供了一种用于在衬底处理期间检测处理室内的原位快速瞬变事件的方法。 该方法包括将数据集与一组标准(原位快速瞬变事件)进行比较的一组传感器,以确定第一数据集是否包括潜在的原位快速瞬变事件。 如果第一数据集包括潜在的原位快速瞬变事件,则该方法还包括保存在潜在的原位快速瞬变事件发生的时间段内发生的电特征。 该方法还包括将电特征与一组存储的电弧特征进行比较。 如果确定匹配,则该方法还包括将电特征分类为第一原位快速瞬时事件,并且基于预定义的一组阈值范围来确定第一原位快速瞬时事件的严重性级别。
    • 7. 发明授权
    • Arrangement for identifying uncontrolled events at the process module level and methods thereof
    • 用于在过程模块级别识别不受控制的事件的安排及其方法
    • US08618807B2
    • 2013-12-31
    • US12826568
    • 2010-06-29
    • Luc AlbaredeVijayakumar C Venugopal
    • Luc AlbaredeVijayakumar C Venugopal
    • G01R31/00
    • H01J37/32935G05B2219/31202
    • A method for detecting an in-situ fast transient event within a processing chamber during substrate processing is provided. The method includes a set of sensors comparing a data set to a set of criteria (in-situ fast transient events) to determine if the first data set includes a potential in-situ fast transient event. If the first data set includes the potential in-situ fast transient event, the method also includes saving an electrical signature that occurs in a time period during which the potential in-situ fast transient event occurs. The method further includes comparing the electrical signature against a set of stored arc signatures. If a match is determined, the method yet also includes classifying the electrical signature as a first in-situ fast transient event and determining a severity level for the first in-situ fast transient event based on a predefined set of threshold ranges.
    • 提供了一种用于在衬底处理期间检测处理室内的原位快速瞬变事件的方法。 该方法包括将数据集与一组标准(原位快速瞬变事件)进行比较的一组传感器,以确定第一数据集是否包括潜在的原位快速瞬变事件。 如果第一数据集包括潜在的原位快速瞬变事件,则该方法还包括保存在潜在的原位快速瞬变事件发生的时间段内发生的电特征。 该方法还包括将电特征与一组存储的电弧特征进行比较。 如果确定匹配,则该方法还包括将电特征分类为第一原位快速瞬时事件,并且基于预定义的一组阈值范围来确定第一原位快速瞬变事件的严重性级别。