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1. 发明授权

US08796675B2 Thin film transistor array substrate and method of manufacturing the same 有权
标题翻译：薄膜晶体管阵列基板及其制造方法
公开(公告)号：US08796675B2
公开(公告)日：2014-08-05
申请号：US13613566
申请日：2012-09-13
申请人： Je-Hun Lee , Ki-Won Kim , Do-Hyun Kim , Woo-Geun Lee , Kap-Soo Yoon
发明人： Je-Hun Lee , Ki-Won Kim , Do-Hyun Kim , Woo-Geun Lee , Kap-Soo Yoon
IPC分类号： H01L35/24
CPC分类号： H01L27/1225 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02554 , H01L21/02565 , H01L23/53238 , H01L27/124 , H01L27/1248 , H01L27/1262 , H01L29/45 , H01L29/4908 , H01L29/513 , H01L29/518 , H01L29/66969 , H01L29/78603 , H01L29/7869 , H01L2924/0002 , H01L2924/00
摘要： A TFT array substrate includes a semiconductive oxide layer disposed on an insulating substrate and including a channel portion, a gate electrode overlapping the semiconductive oxide layer, a gate insulating layer interposed between the semiconductive oxide layer and the gate electrode, and a passivation layer disposed on the semiconductive oxide layer and the gate electrode. At least one of the gate insulating layer and the passivation layer includes an oxynitride layer, and the oxynitride layer has a higher concentration of oxygen than that of nitrogen in a location of the oxynitride layer closer to the semiconductive oxide layer.
摘要翻译： TFT阵列基板包括设置在绝缘基板上并包括沟道部分的半导体氧化物层，与半导体氧化物层重叠的栅极电极，插入在半导体氧化物层和栅电极之间的栅极绝缘层，以及设置在半导体氧化物层和栅电极。栅极绝缘层和钝化层中的至少一个包括氧氮化物层，并且氧氮化物层在氧氮化物层的位置更靠近半导体氧化物层的位置处具有比氮的浓度高的氧氮化物层。

2. 发明授权

US08735890B2 Display substrate and method of manufacturing the display substrate 有权
标题翻译：显示基板和制造显示基板的方法
公开(公告)号：US08735890B2
公开(公告)日：2014-05-27
申请号：US13328658
申请日：2011-12-16
申请人： Ki-Won Kim , Je-Hun Lee , Sung-Haeng Cho , Woo-Geun Lee , Kap-Soo Yoon , Do-Hyun Kim , Seung-Ha Choi
发明人： Ki-Won Kim , Je-Hun Lee , Sung-Haeng Cho , Woo-Geun Lee , Kap-Soo Yoon , Do-Hyun Kim , Seung-Ha Choi
IPC分类号： H01L29/786
CPC分类号： H01L27/1225 , H01L27/1288
摘要： In a display substrate and a method of manufacturing the display substrate, the display substrate includes a data line, a channel pattern, an insulating pattern and a pixel electrode. The data line extends in a direction on a base substrate. The channel pattern is disposed in a separate region between an input electrode connected to the data line and an output electrode spaced apart from the input electrode. The channel pattern makes contact with the input electrode and the output electrode on the input and output electrodes. The insulating pattern is spaced apart from the channel pattern on the base substrate and includes a contact hole exposing the output electrode. The pixel electrode is formed on the insulating pattern to make contact with the output electrode through the contact hole. Thus, a damage of the oxide semiconductor layer may be minimized and a manufacturing process may be simplified.
摘要翻译：在显示基板和显示基板的制造方法中，显示基板包括数据线，通道图案，绝缘图案和像素电极。数据线沿着基底基板上的方向延伸。通道图案设置在与数据线连接的输入电极和与输入电极间隔开的输出电极之间的分离区域中。通道图案与输入电极和输出电极上的输出电极接触。绝缘图案与基底基板上的沟道图案间隔开，并且包括暴露输出电极的接触孔。像素电极形成在绝缘图案上，以通过接触孔与输出电极接触。因此，可以使氧化物半导体层的损伤最小化，并且可以简化制造工艺。

3. 发明授权

US08723179B2 Thin film transistor panel having an etch stopper on semiconductor 有权
标题翻译：薄膜晶体管板在半导体上具有蚀刻停止层
公开(公告)号：US08723179B2
公开(公告)日：2014-05-13
申请号：US12957743
申请日：2010-12-01
申请人： Pil-Sang Yun , Ki-Won Kim , Hye-Young Ryu , Woo-Geun Lee , Seung-Ha Choi , Jae-Hyoung Youn , Kyoung-Jae Chung , Young-Wook Lee , Je-Hun Lee , Kap-Soo Yoon , Do-Hyun Kim , Dong-Ju Yang , Young-Joo Choi
发明人： Pil-Sang Yun , Ki-Won Kim , Hye-Young Ryu , Woo-Geun Lee , Seung-Ha Choi , Jae-Hyoung Youn , Kyoung-Jae Chung , Young-Wook Lee , Je-Hun Lee , Kap-Soo Yoon , Do-Hyun Kim , Dong-Ju Yang , Young-Joo Choi
IPC分类号： H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20
CPC分类号： H01L29/41733 , H01L21/44 , H01L21/441 , H01L21/465 , H01L21/475 , H01L21/47573 , H01L21/47635 , H01L27/1214 , H01L27/1225 , H01L27/127 , H01L27/1288 , H01L29/66969 , H01L29/78606 , H01L29/7869 , H01L29/78696
摘要： A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.
摘要翻译：薄膜晶体管面板包括绝缘基板，设置在绝缘基板上的栅极绝缘层，设置在栅极绝缘层上的氧化物半导体层，设置在氧化物半导体层上的蚀刻停止器，以及设置在源极电极和漏极上的在蚀刻停止器上。

4. 发明授权

US08288766B2 Thin film transistor array substrate and method of manufacturing the same 有权
标题翻译：薄膜晶体管阵列基板及其制造方法
公开(公告)号：US08288766B2
公开(公告)日：2012-10-16
申请号：US12555824
申请日：2009-09-09
申请人： Je-Hun Lee , Ki-Won Kim , Do-Hyun Kim , Woo-Geun Lee , Kap-Soo Yoon
发明人： Je-Hun Lee , Ki-Won Kim , Do-Hyun Kim , Woo-Geun Lee , Kap-Soo Yoon
IPC分类号： H01L29/10
CPC分类号： H01L27/1225 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02554 , H01L21/02565 , H01L23/53238 , H01L27/124 , H01L27/1248 , H01L27/1262 , H01L29/45 , H01L29/4908 , H01L29/513 , H01L29/518 , H01L29/66969 , H01L29/78603 , H01L29/7869 , H01L2924/0002 , H01L2924/00
摘要： A TFT array substrate includes a semiconductive oxide layer disposed on an insulating substrate and including a channel portion, a gate electrode overlapping the semiconductive oxide layer, a gate insulating layer interposed between the semiconductive oxide layer and the gate electrode, and a passivation layer disposed on the semiconductive oxide layer and the gate electrode. At least one of the gate insulating layer and the passivation layer includes an oxynitride layer, and the oxynitride layer has a higher concentration of oxygen than that of nitrogen in a location of the oxynitride layer closer to the semiconductive oxide layer.
摘要翻译： TFT阵列基板包括设置在绝缘基板上并包括沟道部分的半导体氧化物层，与半导体氧化物层重叠的栅极电极，插入在半导体氧化物层和栅电极之间的栅极绝缘层，以及设置在半导体氧化物层和栅电极。栅极绝缘层和钝化层中的至少一个包括氧氮化物层，并且氧氮化物层在氧氮化物层的位置更靠近半导体氧化物层的位置处具有比氮的浓度高的氧氮化物层。

5. 发明申请

US20110284852A1 THIN-FILM TRANSISTOR, ARRAY SUBSTRATE HAVING THE SAME AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：薄膜晶体管，具有该薄膜晶体管的阵列基板及其制造方法
公开(公告)号：US20110284852A1
公开(公告)日：2011-11-24
申请号：US13049783
申请日：2011-03-16
申请人： Ki-Won KIM , Kap-Soo Yoon , Woo-Geun Lee , Yeong-Keun Kwon , Hye-Young Ryu , Jin-Won Lee , Hyun-Jung Lee
发明人： Ki-Won KIM , Kap-Soo Yoon , Woo-Geun Lee , Yeong-Keun Kwon , Hye-Young Ryu , Jin-Won Lee , Hyun-Jung Lee
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/7869 , H01L27/1225 , H01L27/124 , H01L29/78645 , H01L29/78648
摘要： A thin-film transistor includes a semiconductor pattern, a first gate electrode, a source electrode, a drain electrode and a second gate electrode. The semiconductor pattern is formed on a substrate. A first conductive layer has a pattern that includes the first gate electrode which is electrically insulated from the semiconductor pattern. A second conductive layer has a pattern that includes a source electrode electrically connected to the semiconductor pattern, a drain electrode spaced apart from the source electrode, and a second gate electrode electrically connected to the first gate electrode. The second gate electrode is electrically insulated from the semiconductor pattern, the source electrode and the drain electrode.
摘要翻译：薄膜晶体管包括半导体图案，第一栅电极，源电极，漏电极和第二栅电极。半导体图案形成在基板上。第一导电层具有包括与半导体图案电绝缘的第一栅电极的图案。第二导电层具有图案，其包括电连接到半导体图案的源电极，与源电极间隔开的漏电极和与第一栅电极电连接的第二栅电极。第二栅电极与半导体图案，源电极和漏电极电绝缘。

6. 发明申请

US20100059745A1 THIN-FILM TRANSISTOR DISPLAY PANEL AND METHOD OF FABRICATING THE SAME 有权
标题翻译：薄膜晶体管显示面板及其制造方法
公开(公告)号：US20100059745A1
公开(公告)日：2010-03-11
申请号：US12499009
申请日：2009-07-07
申请人： Kap-Soo Yoon , Ki-Won Kim , Sung-Ryul Kim , Sung-Hoon Yang , Woo-Geun Lee
发明人： Kap-Soo Yoon , Ki-Won Kim , Sung-Ryul Kim , Sung-Hoon Yang , Woo-Geun Lee
IPC分类号： H01L29/786 , H01L21/34
CPC分类号： H01L27/1248 , H01L27/1214 , H01L27/1225 , H01L27/1288 , H01L29/4908 , H01L29/7869
摘要： Provided are a thin-film transistor (TFT) display panel having improved electrical properties that can be fabricated time-effectively and a method of fabricating the TFT display panel. The TFT display panel includes: gate wirings which are formed on an insulating substrate; oxide active layer patterns which are formed on the gate wirings; data wirings which are formed on the oxide active layer patterns to cross the gate wirings; a passivation layer which is formed on the oxide active layer patterns and the data wirings and is made of silicon nitride (SiNx); and a pixel electrode which is formed on the passivation layer.
摘要翻译：提供了一种薄膜晶体管（TFT）显示面板，其具有可以有效制造的改进的电气特性和制造TFT显示面板的方法。 TFT显示面板包括：形成在绝缘基板上的栅极布线; 形成在栅极布线上的氧化物有源层图案; 形成在氧化物有源层图案上以跨过栅极布线的数据布线; 形成在氧化物有源层图案和数据布线上并由氮化硅（SiNx）制成的钝化层; 以及形成在钝化层上的像素电极。

7. 发明授权

US08445301B2 Thin-film transistor substrate, method of manufacturing the same, and display device including the same 有权
标题翻译：薄膜晶体管基板及其制造方法以及包括该薄膜晶体管基板的显示装置
公开(公告)号：US08445301B2
公开(公告)日：2013-05-21
申请号：US13027453
申请日：2011-02-15
申请人： Kap-Soo Yoon , Woo-Geun Lee , Bong-Kyun Kim , Sung-Hoon Yang , Ki-Won Kim , Hyun-Jung Lee
发明人： Kap-Soo Yoon , Woo-Geun Lee , Bong-Kyun Kim , Sung-Hoon Yang , Ki-Won Kim , Hyun-Jung Lee
IPC分类号： H01L21/00
CPC分类号： H01L29/78693 , H01L27/1214 , H01L27/1225 , H01L27/1288 , H01L27/3248 , H01L27/3262 , H01L51/5203
摘要： Provided are a thin-film transistor (TFT) substrate, a method of manufacturing the same, and a display device including the same. The TFT substrate includes a gate electrode formed on a substrate, a gate insulating layer formed on the gate electrode, an oxide semiconductor pattern formed on the gate insulating layer, a source electrode formed on the oxide semiconductor pattern, a drain electrode formed on the oxide semiconductor pattern to face the source electrode, and a pixel electrode formed on the gate insulating layer.
摘要翻译：提供了一种薄膜晶体管（TFT）基板，其制造方法和包括该薄膜晶体管的显示装置。 TFT基板包括形成在基板上的栅电极，形成在栅电极上的栅极绝缘层，形成在栅极绝缘层上的氧化物半导体图案，形成在氧化物半导体图案上的源电极，形成在氧化物上的漏电极面对源电极的半导体图案，以及形成在栅极绝缘层上的像素电极。

8. 发明授权

US08022411B2 Thin-film transistor display panel and method of fabricating the same 有权
标题翻译：薄膜晶体管显示面板及其制造方法
公开(公告)号：US08022411B2
公开(公告)日：2011-09-20
申请号：US12499009
申请日：2009-07-07
申请人： Kap-Soo Yoon , Ki-Won Kim , Sung-Ryul Kim , Sung-Hoon Yang , Woo-Geun Lee
发明人： Kap-Soo Yoon , Ki-Won Kim , Sung-Ryul Kim , Sung-Hoon Yang , Woo-Geun Lee
IPC分类号： H01L51/52
CPC分类号： H01L27/1248 , H01L27/1214 , H01L27/1225 , H01L27/1288 , H01L29/4908 , H01L29/7869
摘要： Provided are a thin-film transistor (TFT) display panel having improved electrical properties that can be fabricated time-effectively and a method of fabricating the TFT display panel. The TFT display panel includes: gate wirings which are formed on an insulating substrate; oxide active layer patterns which are formed on the gate wirings; data wirings which are formed on the oxide active layer patterns to cross the gate wirings; a passivation layer which is formed on the oxide active layer patterns and the data wirings and is made of silicon nitride (SiNx); and a pixel electrode which is formed on the passivation layer.
摘要翻译：提供了一种薄膜晶体管（TFT）显示面板，其具有可以有效制造的改进的电气特性，以及制造TFT显示面板的方法。 TFT显示面板包括：形成在绝缘基板上的栅极布线; 形成在栅极布线上的氧化物有源层图案; 形成在氧化物有源层图案上以跨过栅极布线的数据布线; 形成在氧化物有源层图案和数据布线上并由氮化硅（SiNx）制成的钝化层; 以及形成在钝化层上的像素电极。

9. 发明申请

US20110204370A1 Thin-Film Transistor Substrate, Method of Manufacturing the Same, and Display Device Including the Same 有权
标题翻译：薄膜晶体管基板及其制造方法以及包括其的显示装置
公开(公告)号：US20110204370A1
公开(公告)日：2011-08-25
申请号：US13027453
申请日：2011-02-15
申请人： Kap-Soo Yoon , Woo-Geun Lee , Bong-Kyun Kim , Sung-Hoon Yang , Ki-Won Kim , Hyun-Jung Lee
发明人： Kap-Soo Yoon , Woo-Geun Lee , Bong-Kyun Kim , Sung-Hoon Yang , Ki-Won Kim , Hyun-Jung Lee
IPC分类号： H01L33/08 , H01L29/786 , H01L21/44
CPC分类号： H01L29/78693 , H01L27/1214 , H01L27/1225 , H01L27/1288 , H01L27/3248 , H01L27/3262 , H01L51/5203
摘要： Provided are a thin-film transistor (TFT) substrate, a method of manufacturing the same, and a display device including the same. The TFT substrate includes a gate electrode formed on a substrate, a gate insulating layer formed on the gate electrode, an oxide semiconductor pattern formed on the gate insulating layer, a source electrode formed on the oxide semiconductor pattern, a drain electrode formed on the oxide semiconductor pattern to face the source electrode, and a pixel electrode formed on the gate insulating layer.
摘要翻译：提供了一种薄膜晶体管（TFT）基板，其制造方法和包括该薄膜晶体管的显示装置。 TFT基板包括形成在基板上的栅电极，形成在栅电极上的栅极绝缘层，形成在栅极绝缘层上的氧化物半导体图案，形成在氧化物半导体图案上的源电极，形成在氧化物上的漏电极面对源电极的半导体图案，以及形成在栅极绝缘层上的像素电极。

10. 发明授权

US08772897B2 Thin-film transistor, array substrate having the same and method of manufacturing the same 有权
标题翻译：薄膜晶体管，具有相同的阵列基板及其制造方法
公开(公告)号：US08772897B2
公开(公告)日：2014-07-08
申请号：US13049783
申请日：2011-03-16
申请人： Ki-Won Kim , Kap-Soo Yoon , Woo-Geun Lee , Yeong-Keun Kwon , Hye-Young Ryu , Jin-Won Lee , Hyun-Jung Lee
发明人： Ki-Won Kim , Kap-Soo Yoon , Woo-Geun Lee , Yeong-Keun Kwon , Hye-Young Ryu , Jin-Won Lee , Hyun-Jung Lee
IPC分类号： H01L27/146
CPC分类号： H01L29/7869 , H01L27/1225 , H01L27/124 , H01L29/78645 , H01L29/78648
摘要： A thin-film transistor includes a semiconductor pattern, a first gate electrode, a source electrode, a drain electrode and a second gate electrode. The semiconductor pattern is formed on a substrate. A first conductive layer has a pattern that includes the first gate electrode which is electrically insulated from the semiconductor pattern. A second conductive layer has a pattern that includes a source electrode electrically connected to the semiconductor pattern, a drain electrode spaced apart from the source electrode, and a second gate electrode electrically connected to the first gate electrode. The second gate electrode is electrically insulated from the semiconductor pattern, the source electrode and the drain electrode.
摘要翻译：薄膜晶体管包括半导体图案，第一栅电极，源电极，漏电极和第二栅电极。半导体图案形成在基板上。第一导电层具有包括与半导体图案电绝缘的第一栅电极的图案。第二导电层具有图案，其包括电连接到半导体图案的源电极，与源电极间隔开的漏电极和与第一栅电极电连接的第二栅电极。第二栅电极与半导体图案，源电极和漏电极电绝缘。

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