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    • 4. 发明授权
    • Circuit for providing chip-select signals to a plurality of ranks of a DDR memory module
    • 用于向DDR存储器模块的多个等级提供芯片选择信号的电路
    • US08081535B2
    • 2011-12-20
    • US12954492
    • 2010-11-24
    • Jayesh R. BhaktaJeffrey C. Solomon
    • Jayesh R. BhaktaJeffrey C. Solomon
    • G11C8/00
    • G11C8/12G06F12/0207G06F12/0215G11C5/04G11C5/066G11C7/1048G11C2207/105H05K1/181H05K2201/10159H05K2203/1572Y02P70/611
    • A circuit is configured to be mounted on a memory module connectable to a computer system so as to be electrically coupled to a plurality of memory devices on the memory module. The memory module has a first number of ranks of double-data-rate (DDR) memory devices activated by a first number of chip-select signals. The circuit is configurable to receive bank address signals, a second number of chip-select signals, and row/column address signals from the computer system. The circuit is further configurable to generate phase-locked clock signals in response to clock signals received from the computer system and to provide the first number of chip-select signals to the first number of ranks in response to the phase-locked clock signals, the received bank address signals, the received second number of chip-select signals, and at least one of the received row/column address signals.
    • 电路被配置为安装在可连接到计算机系统的存储器模块上,以便电耦合到存储器模块上的多个存储器件。 存储器模块具有由第一数量的芯片选择信号激活的第二数量的双数据速率(DDR)存储器件。 电路可配置为接收来自计算机系统的存储体地址信号,第二数量的芯片选择信号和行/列地址信号。 该电路还可配置为响应于从计算机系统接收的时钟信号而产生锁相时钟信号,并响应于锁相时钟信号将第一数量的芯片选择信号提供给第一数量的等级, 接收的存储体地址信号,所接收的第二数量的芯片选择信号,以及所接收的行/列地址信号中的至少一个。
    • 6. 发明授权
    • Circuit providing load isolation and memory domain translation for memory module
    • 电路为存储器模块提供负载隔离和存储器域转换
    • US07916574B1
    • 2011-03-29
    • US12955711
    • 2010-11-29
    • Jeffrey C. SolomonJayesh R. Bhakta
    • Jeffrey C. SolomonJayesh R. Bhakta
    • G11C8/00
    • G06F13/1673G06F12/00G06F13/00G06F13/4243G06F13/4282G11C5/04G11C7/1072G11C15/00
    • A circuit is configured to be mounted on a memory module connectable to a computer system so as to be electrically coupled to a plurality of memory devices on the memory module. The memory module has a first number of ranks of double-data-rate (DDR) memory devices activated by a first number of chip-select signals. The circuit is configurable to receive bank address signals, a second number of chip-select signals, and row/column address signals from the computer system. The circuit is further configurable to generate phase-locked clock signals in response to clock signals received from the computer system, to selectively isolate one or more loads of the first number of ranks from the computer system, and to translate between a system memory domain and a physical memory domain of the memory module.
    • 电路被配置为安装在可连接到计算机系统的存储器模块上,以便电耦合到存储器模块上的多个存储器件。 存储器模块具有由第一数量的芯片选择信号激活的第二数量的双数据速率(DDR)存储器件。 电路可配置为接收来自计算机系统的存储体地址信号,第二数量的芯片选择信号和行/列地址信号。 该电路还可配置为响应于从计算机系统接收的时钟信号而产生锁相时钟信号,以便选择性地将计算机系统中的第一数量级别的一个或多个负载隔离,并在系统存储器域和 存储器模块的物理内存域。
    • 10. 发明授权
    • Circuit for memory module
    • 内存模块电路
    • US08081536B1
    • 2011-12-20
    • US13032470
    • 2011-02-22
    • Jeffrey C. SolomonJayesh R. Bhakta
    • Jeffrey C. SolomonJayesh R. Bhakta
    • G11C8/00
    • G06F13/1673G06F12/00G06F13/00G06F13/4243G06F13/4282G11C5/04G11C7/1072G11C15/00
    • A circuit is configured to be mounted on a memory module configured to be operationally coupled to a computer system. The memory module has a first number of ranks of double-data-rate (DDR) memory circuits activated by a first number of chip-select signals. The circuit is configurable to receive a set of signals comprising address signals and a second number of chip-select signals smaller than the first number of chip-select signals. The circuit is further configurable to generate phase-locked clock signals, to selectively isolate a load of at least one rank of the first number of ranks from the computer system in response at least in part to the set of signals, and to generate the first number of chip-select signals in response at least in part to the phase-locked clock signals, the address signals, and the second number of chip-select signals.
    • 电路被配置为安装在被配置为可操作地耦合到计算机系统的存储器模块上。 存储器模块具有由第一数量的芯片选择信号激活的第一数量的双数据速率(DDR)存储器电路。 电路可配置为接收包括地址信号和小于第一数量的芯片选择信号的第二数量的芯片选择信号的信号。 该电路还可配置成产生锁相时钟信号,以至少部分地响应于该组信号来选择性地隔离来自计算机系统的第一数量级别的至少一级的负载,并且产生第一 芯片选择信号的数量至少部分地响应于锁相时钟信号,地址信号和第二数量的芯片选择信号。