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    • 1. 发明授权
    • Deuterium reservoirs and ingress paths
    • 氘池和入口路径
    • US06770501B2
    • 2004-08-03
    • US10277835
    • 2002-10-23
    • Jay BurnhamEduard A. CartierThomas G. FerenceSteven W. MittlAnthony K. Stamper
    • Jay BurnhamEduard A. CartierThomas G. FerenceSteven W. MittlAnthony K. Stamper
    • H01L213205
    • H01L21/76224H01L21/3003H01L21/823481
    • Semiconductor structures are provided with on-board deuterium reservoirs or with deuterium ingress paths which allow for diffusion of deuterium to semiconductor device regions for passivation purposes. The on-board deuterium reservoirs are in the form of plugs which extend through an insulating layer and a deuterium barrier layer to the semiconductor substrate, and are preferably positioned in contact with a shallow trench oxide which will allow diffusion of deuterium to the semiconductor devices. The deuterium ingress paths extend through thin film layers from the top or through the silicon substrate. The latter include shallow trench isolations formed in a semiconductor substrate which are adjacent and connected to semiconductor devices formed in the semiconductor substrate, and where the back portion of the semiconductor substrate has been polished or ground down to the bottom of the shallow trench isolation, thereby allowing deuterium, during an anneal, to diffuse from the back through the shallow trench isolation to the semiconductor devices in the semiconductor substrate.
    • 半导体结构设置有板上氘储层或氘入口路径,其允许氘扩散到半导体器件区域用于钝化目的。 板上氘储存器是插塞的形式,其延伸穿过绝缘层和氘屏障层到半导体衬底,并且优选地定位成与允许氘扩散到半导体器件的浅沟槽氧化物接触。 氘入口路径从顶部或穿过硅衬底延伸穿过薄膜层。 后者包括形成在半导体衬底中的与沟道半导体衬底中形成的半导体器件相邻并连接的浅沟槽隔离,并且其中半导体衬底的后部已经被抛光或者被研磨到浅沟槽隔离的底部,由此 允许在退火期间的氘从后面通过浅沟槽隔离扩散到半导体衬底中的半导体器件。
    • 2. 发明授权
    • Deuterium reservoirs and ingress paths
    • 氘池和入口路径
    • US06521977B1
    • 2003-02-18
    • US09489277
    • 2000-01-21
    • Jay BurnhamEduard A. CartierThomas G. FerenceSteven W. MittlAnthony K. Stamper
    • Jay BurnhamEduard A. CartierThomas G. FerenceSteven W. MittlAnthony K. Stamper
    • H01L2358
    • H01L21/76224H01L21/3003H01L21/823481
    • Semiconductor structures are provided with on-board deuterium reservoirs or with deuterium ingress paths which allow for diffusion of deuterium to semiconductor device regions for passivation purposes. The on-board deuterium reservoirs are in the form of plugs which extend through an insulating layer and a deuterium barrier layer to the semiconductor substrate, and are preferably positioned in contact with a shallow trench oxide which will allow diffusion of deuterium to the semiconductor devices. The deuterium ingress paths extend through thin film layers from the top or through the silicon substrate. The latter include shallow trench isolations formed in a semiconductor substrate which are adjacent and connected to semiconductor devices formed in the semiconductor substrate, and where the back portion of the semiconductor substrate has been polished or ground down to the bottom of the shallow trench isolation, thereby allowing deuterium, during an anneal, to diffuse from the back through the shallow trench isolation to the semiconductor devices in the semiconductor substrate.
    • 半导体结构设置有板上氘储层或氘入口路径,其允许氘扩散到半导体器件区域用于钝化目的。 板上氘储存器是插塞的形式,其延伸穿过绝缘层和氘屏障层到半导体衬底,并且优选地定位成与允许氘扩散到半导体器件的浅沟槽氧化物接触。 氘入口路径从顶部或穿过硅衬底延伸穿过薄膜层。 后者包括形成在半导体衬底中的与沟道半导体衬底中形成的半导体器件相邻并连接的浅沟槽隔离,并且其中半导体衬底的后部已经被抛光或者被研磨到浅沟槽隔离的底部,由此 允许在退火期间的氘从后面通过浅沟槽隔离扩散到半导体衬底中的半导体器件。