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    • 2. 发明授权
    • Stacked pixels for high resolution CMOS image sensors with BCMD charge detectors
    • 具有BCMD电荷检测器的高分辨率CMOS图像传感器的堆叠像素
    • US08946845B1
    • 2015-02-03
    • US13153055
    • 2011-06-03
    • Jaroslav HynecekHirofumi KomoriXia Zhao
    • Jaroslav HynecekHirofumi KomoriXia Zhao
    • H01L27/146H01L31/113
    • H01L27/1463H01L27/1461H01L27/14612
    • The invention describes in detail a solid-state CMOS image sensor, specifically a CMOS image sensor pixel that has stacked photo-sites, high sensitivity, and low dark current. The pixels have incorporated therein special potential barriers under the standard pinned photodiode region that diverts the photo-generated electrons from a deep region within the silicon bulk to separate storage structures located at the surface of the silicon substrate next to the pinned photodiode. The storage structures are p channel BCMD transistors that are biased to a low dark current generation mode during a charge integration period. The signal readout from the BCMD is nondestructive, therefore, without kTC noise generation. Thus a single pixel is capable of detecting several color-coded signals while using fewer or without using any light absorbing color filters on top of the pixel. The image sensors constructed with the stacked photo-sites with BCMD readout have higher pixel densities, higher resolution, higher sensitivity, very low dark current, and no color aliasing if at least three depth encoded signals are read from a single photodiode. The pixels having stacked photo-sites with BCMD readout are particularly suitable for a CMOS image sensor that is illuminated from the back side.
    • 本发明详细描述了固态CMOS图像传感器,特别是具有堆叠的光电点,高灵敏度和低暗电流的CMOS图像传感器像素。 这些像素在其中引入了标准钉扎光电二极管区域下的特殊势垒,其将光生电子从硅体内的深区域转移到位于硅衬底表面附近的存储结构,靠近被钉扎的光电二极管。 存储结构是在电荷积分时段期间偏置到低暗电流产生模式的p沟道BCMD晶体管。 从BCMD读出的信号是非破坏性的,因此,没有产生kTC噪声。 因此,单个像素能够在使用较少或不使用像素顶部的任何光吸收滤色器的情况下检测多个颜色编码信号。 用BCMD读出器堆叠的光电点构成的图像传感器具有更高的像素密度,更高的分辨率,更高的灵敏度,非常低的暗电流,并且如果从单个光电二极管读取至少三个深度编码的信号,则不会出现色差。 具有BCMD读出的具有堆叠的光电点的像素特别适合于从背面照亮的CMOS图像传感器。
    • 4. 发明授权
    • CMOS image sensor with global shutter, rolling shutter, and a variable conversion gain, having pixels employing several BCMD transistors coupled to a single photodiode and dual gate BCMD transistors for charge storage and sensing
    • 具有全局快门,滚动快门和可变转换增益的CMOS图像传感器,具有使用耦合到单个光电二极管的多个BCMD晶体管的像素和用于电荷存储和感测的双栅极BCMD晶体管
    • US08928792B1
    • 2015-01-06
    • US13153369
    • 2011-06-03
    • Jaroslav HynecekGennadiy AgranovXiangli LiHirofumi KomoriXia ZhaoChung Chun Wan
    • Jaroslav HynecekGennadiy AgranovXiangli LiHirofumi KomoriXia ZhaoChung Chun Wan
    • H04N5/335H04N5/359H04N5/3745
    • H01L27/14612H01L27/14605H01L27/14614H01L27/14645H01L27/14656H01L27/14679H04N5/3591H04N5/3745
    • The invention describes a solid-state CMOS image sensor array and discloses image sensor array pixels with global and rolling shutter capabilities that utilize multiple BCMD transistors for a single photodiode, for charge storage and sensing. Thus, the valuable pixel area saved by employing the BCMD transistor for charge storage and sensing is used by placing several BCMD transistors coupled to one photodiode. This increases the Dynamic Range (DR) of the sensor, since the same photodiode can integrate charge for different integration times, both long and short. This allows sensing of two different image signals from a single pixel without saturation, a low level signal with long integration time followed by a high level signal with short integration time. The signal processing circuits located at the periphery of the array can then process these signals into a single Wide Dynamic Range (WDR) output. Further disclosed is an image sensor array with pixels that use BCMD transistors for charge storage and sensing having multiple concentric gates, which allows changing the conversion gain of the BCMD transistors by applying various biases to the gates. Variable conversion gain is a useful feature when building WDR sensors since low conversion gain and high well capacity allows detection of high level signals and the same structure can be used to detect, at the same time, low level signals with high conversion gain and thus low noise.
    • 本发明描述了一种固态CMOS图像传感器阵列,并公开了具有全局和滚动快门功能的图像传感器阵列像素,其利用用于单个光电二极管的多个BCMD晶体管用于电荷存储和感测。 因此,通过使用耦合到一个光电二极管的几个BCMD晶体管来使用通过使用用于电荷存储和感测的BCMD晶体管节省的有价值的像素区域。 这增加了传感器的动态范围(DR),因为相同的光电二极管可以集成不同集成时间的电荷,包括长和短。 这允许感测来自不饱和的单个像素的两个不同图像信号,具有长积分时间的低电平信号,随后是具有短积分时间的高电平信号。 位于阵列外围的信号处理电路然后可以将这些信号处理成单个宽动态范围(WDR)输出。 进一步公开的是具有使用BCMD晶体管的像素的图像传感器阵列,用于具有多个同心门的电荷存储和感测,这允许通过向栅极应用各种偏压来改变BCMD晶体管的转换增益。 可变转换增益是构建WDR传感器的有用特征,因为低转换增益和高容量能够允许检测高电平信号,并且可以使用相同的结构同时检测具有高转换增益的低电平信号,从而低 噪声。
    • 5. 发明授权
    • Sealing members, articles using the same and methods of reducing sticktion
    • 密封件,使用相同的物品以及减少粘性的方法
    • US08603638B2
    • 2013-12-10
    • US13082928
    • 2011-04-08
    • Yongming LiuXia Zhao
    • Yongming LiuXia Zhao
    • B32B13/12
    • A61M5/31513A61L27/165A61L29/042A61L31/049F16J9/26Y10T428/31667
    • The present invention provides rubber sealing members having an exterior surface adapted to sealingly engage an inner surface of a chamber of the medical device, the exterior surface of the sealing member having a coating thereon prepared from a curable composition including: (a) a first organopolysiloxane having at least two alkenyl groups; and (b) a second organopolysiloxane having at least two pendant hydrogen groups, the second organopolysiloxane being different from the first organopolysiloxane, wherein at least one of the first organopolysiloxane, the second organopolysiloxane or an optional third organopolysiloxane of the curable composition comprises a fluoro group.
    • 本发明提供了一种具有外表面的橡胶密封构件,该外表面适于与医疗装置的腔室的内表面密封接合,该密封构件的外表面上具有由可固化组合物制成的涂层,其包含:(a)第一有机聚硅氧烷 具有至少两个烯基; 和(b)具有至少两个侧链氢基团的第二有机聚硅氧烷,所述第二有机聚硅氧烷不同于所述第一有机聚硅氧烷,其中所述可固化组合物中的至少一种第一有机聚硅氧烷,第二有机聚硅氧烷或任选的第三有机聚硅氧烷包含氟基团 。