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1. 发明申请

US20070171736A1 Method and apparatus for repairing a shorted tunnel device 失效
标题翻译：修理短路隧道装置的方法和装置
公开(公告)号：US20070171736A1
公开(公告)日：2007-07-26
申请号：US11330493
申请日：2006-01-12
申请人： Janusz Nowak , Mark Curtis Lamorey , Yu Lu
发明人： Janusz Nowak , Mark Curtis Lamorey , Yu Lu
IPC分类号： G06F11/00 , G11C29/00
CPC分类号： G11C11/16
摘要： A method for repairing a shorted tunnel device includes the step of applying a stressing signal to the tunnel device. The stressing signal has an amplitude that is greater than an amplitude of a bias signal applied to the device during normal operation. One or more characteristics of the stressing signal are selected so as to substantially optimize a repair of the device. The amplitude and/or the duration of the stressing signal are preferably selected so as to remove a conductive filament shorting the device via a thermal mechanism (e.g., heating).
摘要翻译：用于修复短路隧道装置的方法包括将应力信号施加到隧道装置的步骤。应力信号的幅度大于在正常操作期间施加到装置的偏置信号的幅度。选择应力信号的一个或多个特征，以便基本上优化装置的修复。优选地选择应力信号的振幅和/或持续时间，以便去除通过热机构（例如，加热）使器件短路的导电丝。

2. 发明申请

US20070200202A1 Phase change memory structure having an electrically formed constriction 审中-公开
标题翻译：相变存储器结构具有电气形成的收缩
公开(公告)号：US20070200202A1
公开(公告)日：2007-08-30
申请号：US11364315
申请日：2006-02-28
申请人： Janusz Nowak , Yu Lu
发明人： Janusz Nowak , Yu Lu
IPC分类号： H01L29/12
CPC分类号： H01L45/1246 , H01L45/06 , H01L45/144
摘要： A PCM structure configurable for use as a nonvolatile storage element includes a first electrode, a first phase change material layer formed on at least a portion of an upper surface of the first electrode, at least one insulating layer formed on an upper surface of the first phase change material layer, at least a second phase change material layer formed on an upper surface of the at least first insulating layer, and a second electrode formed on at least a portion of an upper surface of the at least second phase change material layer. The insulating layer is configurable for forming an aperture therethrough in response to a first signal of a prescribed level applied between the first and second electrodes, the aperture constricting a flow of current in the PCM structure to thereby create a region of localized heating in the first and second phase change material layers in response to a second signal applied between the first and second electrodes.
摘要翻译：可配置为用作非易失性存储元件的PCM结构包括第一电极，形成在第一电极的上表面的至少一部分上的第一相变材料层，形成在第一电极的上表面上的至少一个绝缘层相变材料层，形成在所述至少第一绝缘层的上表面上的至少第二相变材料层，以及形成在所述至少第二相变材料层的上表面的至少一部分上的第二电极。绝缘层可配置成响应于施加在第一和第二电极之间的规定电平的第一信号而形成通孔，孔径限制PCM结构中的电流流动，从而在第一电极中产生局部加热区域以及响应于施加在第一和第二电极之间的第二信号的第二相变材料层。

3. 发明申请

US20070159898A1 METHOD AND APPARATUS FOR INCREASING YIELD IN A MEMORY CIRCUIT 有权
标题翻译：用于在存储器电路中增加电容的方法和装置
公开(公告)号：US20070159898A1
公开(公告)日：2007-07-12
申请号：US11330492
申请日：2006-01-12
申请人： Mark Lamorey , Yu Lu , Janusz Nowak
发明人： Mark Lamorey , Yu Lu , Janusz Nowak
IPC分类号： G11C29/00 , G11C11/00 , G11C7/00
CPC分类号： G11C29/50 , G11C11/16 , G11C29/12005 , G11C29/44 , G11C29/72 , G11C2029/5006
摘要： Apparatus for repairing one or more shorted memory cells in a memory circuit includes control circuitry. The control circuitry is operative in one of at least a first mode and a second mode. In the first mode, the control circuitry is operative to apply a first signal to a selected memory cell in the memory circuit for reading a logic state of the selected memory cell and to determine whether or not the selected memory cell is shorted. In the second mode, the control circuitry is operative to apply a second signal to a selected memory cell which has been determined to be shorted for initiating a repair of the selected memory cell, the second signal being greater in magnitude than the first signal.
摘要翻译：用于修复存储器电路中的一个或多个短路存储器单元的装置包括控制电路。控制电路在至少第一模式和第二模式之一中操作。在第一模式中，控制电路可操作以将第一信号施加到存储器电路中的选定存储单元，以读取所选存储单元的逻辑状态，并确定所选存储单元是否短路。在第二模式中，控制电路可操作以将第二信号施加到所选择的存储器单元，所选择的存储单元已被确定为短路以用于启动所选存储单元的修复，第二信号的幅度大于第一信号。

4. 发明申请

US20070195621A1 METHOD AND APPARATUS FOR INCREASING YIELD IN A MEMORY CIRCUIT 有权
公开(公告)号：US20070195621A1
公开(公告)日：2007-08-23
申请号：US11741030
申请日：2007-04-27
申请人： Mark Lamorey , Yu Lu , Janusz Nowak
发明人： Mark Lamorey , Yu Lu , Janusz Nowak
IPC分类号： G11C29/00 , G11C7/00 , G11C11/00
CPC分类号： G11C29/50 , G11C11/16 , G11C29/12005 , G11C29/44 , G11C29/72 , G11C2029/5006
摘要： Apparatus for repairing one or more shorted memory cells in a memory circuit includes control circuitry. The control circuitry is operative in one of at least a first mode and a second mode. In the first mode, the control circuitry is operative to apply a first signal to a selected memory cell in the memory circuit for reading a logic state of the selected memory cell and to determine whether or not the selected memory cell is shorted. In the second mode, the control circuitry is operative to apply a second signal to a selected memory cell which has been determined to be shorted for initiating a repair of the selected memory cell, the second signal being greater in magnitude than the first signal.

5. 发明授权

US09606302B2 Ferrules for fiber optic connectors 有权
公开(公告)号：US09606302B2
公开(公告)日：2017-03-28
申请号：US14776911
申请日：2014-03-13
申请人： Michael James Ott , Yu Lu
发明人： Michael James Ott , Yu Lu
IPC分类号： G02B6/38 , G06N3/063 , G06N3/08
CPC分类号： G02B6/3863 , G02B6/381 , G06N3/04 , G06N3/0635 , G06N3/08
摘要： A ferrule for a fiber optic connector includes: a main body extending from a first end to a second end, the main body defining a bore extending from the first end to the second end; an end surface at the second end of the main body; and a raised portion on the end surface, the raised portion extending from the second end and surrounding the bore; wherein an optical fiber is configured to be positioned within the bore of the main body; and wherein the end surface is configured to be polished to remove the raised portion.

6. 发明授权

US08864391B2 Fiber optic connector and cable assembly having a fiber locking mechanism 有权
标题翻译：具有光纤锁定机构的光纤连接器和电缆组件
公开(公告)号：US08864391B2
公开(公告)日：2014-10-21
申请号：US13552856
申请日：2012-07-19
申请人： Yu Lu
发明人： Yu Lu
IPC分类号： G02B6/36 , G02B6/38
CPC分类号： G02B6/4434 , G02B6/36 , G02B6/3821 , G02B6/3826 , G02B6/3869 , G02B6/3885 , G02B6/3887 , G02B6/3893
摘要： The present disclosure relates to a fiber optic connector and cable assembly. The fiber optic connector and cable assembly includes a fiber optic connector, a fiber optic cable, and an anchoring mechanism. The fiber optic connector includes a connector housing and a ferrule assembly having a ferrule and a spring. The fiber optic cable includes at least one optical fiber contained within a cable jacket and at least one strength structure for providing tensile reinforcement to the fiber optic cable. The fiber optic cable is attached to the fiber optic connector and the at least one optical fiber runs from the fiber optic cable through a total length of the fiber optic connector. The anchor mechanism anchors the at least one optical fiber to at least one of the cable jacket and the at least one strength structure.
摘要翻译：本公开涉及光纤连接器和电缆组件。光纤连接器和电缆组件包括光纤连接器，光纤电缆和锚定机构。光纤连接器包括连接器壳体和具有套圈和弹簧的套圈组件。光缆包括至少一根包含在电缆护套中的光纤和至少一个用于向光纤电缆提供抗拉强度的强度结构。光纤电缆连接到光纤连接器，并且至少一个光纤从光纤电缆穿过光纤连接器的总长度。所述锚固机构将所述至少一根光纤锚固到所述缆线护套和所述至少一个强度结构中的至少一个。

7. 发明授权

US08537588B2 Magnetic shift register memory device 有权
标题翻译：磁移位寄存器存储器
公开(公告)号：US08537588B2
公开(公告)日：2013-09-17
申请号：US13431185
申请日：2012-03-27
申请人： John K. De Brosse , William J. Gallagher , Yu Lu
发明人： John K. De Brosse , William J. Gallagher , Yu Lu
IPC分类号： G11C19/00
CPC分类号： G11C11/161 , G11C11/14 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C19/0808 , Y10S977/933
摘要： In one embodiment, the invention is a magnetic shift register memory device. One embodiment of a memory cell includes a magnetic column including a plurality of magnetic domains, a reader coupled to the magnetic column, for reading data from the magnetic domains, a temporary memory for storing data read from the magnetic domains, and a writer coupled to the magnetic column, for writing data in the temporary memory to the magnetic domains.
摘要翻译：在一个实施例中，本发明是磁移位寄存器存储器件。存储单元的一个实施例包括包括多个磁畴的磁柱，耦合到磁柱的读取器，用于从磁畴读取数据，用于存储从磁畴读取的数据的临时存储器和耦合到磁柱，用于将临时存储器中的数据写入磁畴。

8. 发明申请

US20130130446A1 TRANSISTOR EMPLOYING VERTICALLY STACKED SELF-ALIGNED CARBON NANOTUBES 有权
标题翻译：采用垂直堆叠自对准碳纳米管的晶体管
公开(公告)号：US20130130446A1
公开(公告)日：2013-05-23
申请号：US13605238
申请日：2012-09-06
申请人： Qing Cao , Dechao Guo , Shu-Jen Han , Yu Lu , Keith Kwong Hon Wong
发明人： Qing Cao , Dechao Guo , Shu-Jen Han , Yu Lu , Keith Kwong Hon Wong
IPC分类号： H01L21/336 , B82Y40/00
CPC分类号： H01L51/057 , B82Y10/00 , B82Y30/00 , H01L29/125 , H01L29/66439 , H01L29/775 , H01L29/7827 , H01L51/0045 , H01L51/0048 , Y10S977/742 , Y10S977/842 , Y10S977/938
摘要： A fin structure including a vertical alternating stack of a first isoelectric point material layer having a first isoelectric point and a second isoelectric material layer having a second isoelectric point less than the first isoelectric point is formed. The first and second isoelectric point material layers become oppositely charged in a solution with a pH between the first and second isoelectric points. Negative electrical charges are imparted onto carbon nanotubes by an anionic surfactant to the solution. The electrostatic attraction causes the carbon nanotubes to be selectively attached to the surfaces of the first isoelectric point material layer. Carbon nanotubes are attached to the first isoelectric point material layer in self-alignment along horizontal lengthwise directions of the fin structure. A transistor can be formed, which employs a plurality of vertically aligned horizontal carbon nanotubes as the channel.
摘要翻译：形成包括具有第一等电点的第一等电点材料层和具有小于第一等电点的第二等电点的第二等电子材料层的垂直交替堆叠的鳍结构。第一和第二等电点材料层在具有第一和第二等电点之间的pH的溶液中相反地充电。通过阴离子表面活性剂将负电荷赋予碳纳米管。静电引力使得碳纳米管选择性地附着在第一等电点材料层的表面上。碳纳米管沿翅片结构的水平长度方向自对准地附接到第一等电点材料层。可以形成晶体管，其采用多个垂直排列的水平碳纳米管作为沟道。

9. 发明申请

US20120167387A1 METHOD OF TERMINATING A FIBER OPTIC CABLE 有权
标题翻译：终止光纤电缆的方法
公开(公告)号：US20120167387A1
公开(公告)日：2012-07-05
申请号：US13229036
申请日：2011-09-09
申请人： Yu Lu , Thomas Marcouiller , Nicholas Torman , Scott Carlson , Paul Suek
发明人： Yu Lu , Thomas Marcouiller , Nicholas Torman , Scott Carlson , Paul Suek
IPC分类号： G02B6/245
CPC分类号： G02B6/3887 , G02B6/387 , G02B6/3885
摘要： A method for terminating a fiber optic cable includes removing an end portion of an outer jacket of a fiber optic cable to expose a strength member and at least one optical fiber. A binder material of the strength member of the fiber optic cable is heated using a heat source to expose strength elements of the strength member. The strength elements are secured to a fiber optic connector assembly using an adhesive.
摘要翻译：一种端接光纤电缆的方法包括去除光纤电缆的外护套的端部以暴露强度构件和至少一根光纤。使用热源加热光纤电缆的强度部件的粘合剂材料，以暴露强度部件的强度元件。强度元件使用粘合剂固定到光纤连接器组件。

10. 发明授权

US08149397B2 Metallic nanostructures adapted for electromagnetic field enhancement 有权
标题翻译：适用于电磁场增强的金属纳米结构
公开(公告)号：US08149397B2
公开(公告)日：2012-04-03
申请号：US11886390
申请日：2006-03-14
申请人： Luke P. Lee , Yu Lu , Gang L. Liu , Jaeyoun Kim
发明人： Luke P. Lee , Yu Lu , Gang L. Liu , Jaeyoun Kim
IPC分类号： G01J3/44
CPC分类号： G01N21/658 , B82Y5/00 , B82Y15/00 , B82Y20/00 , B82Y30/00 , B82Y40/00
摘要： The disclosure relates to metallic nanophotonic crescent structures, or “nanocrescent SERS probes,” that enhance detectable signals to facilitate molecular detections. More particularly, the nanocrescent SERS probes of the disclosure possess specialized geometries, including an edge surrounding the opening that is capable of enhancing local electromagnetic fields. Nanosystems utilizing such structures are particularly useful in the medical field for detecting rare molecular targets, biomolecular cellular imaging, and in molecular medicine.
摘要翻译：本公开涉及金属纳米光子月牙结构或“纳米新SERS探针”，其增强可检测信号以促进分子检测。更具体地，本公开的纳米新SERS探针具有专门的几何形状，包括围绕开口的能够增强局部电磁场的边缘。利用这种结构的纳米系统在用于检测稀有分子靶标，生物分子细胞成像和分子医学的医学领域中特别有用。

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