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1. 发明授权

US07439197B2 Method of fabricating a capacitor 失效
标题翻译：制造电容器的方法
公开(公告)号：US07439197B2
公开(公告)日：2008-10-21
申请号：US11267264
申请日：2005-11-07
申请人： Jang-yeon Kwon , Hyuk Lim , Takashi Noguchi , Young-soo Park , Suk-pil Kim , Hans S. Cho , Ji-sim Jung , Kyung-bae Park , Do-young Kim
发明人： Jang-yeon Kwon , Hyuk Lim , Takashi Noguchi , Young-soo Park , Suk-pil Kim , Hans S. Cho , Ji-sim Jung , Kyung-bae Park , Do-young Kim
IPC分类号： H01L21/00 , C30B23/00
CPC分类号： H01L29/66765 , C23C14/3464 , C23C14/46 , H01L21/0242 , H01L21/02422 , H01L21/02532 , H01L21/02631
摘要： A method of preparing a semiconductor film on a substrate is disclosed. The method includes arranging an insulating substrate in a deposition chamber and depositing a semiconductor film onto the insulating substrate using ion beam deposition, wherein a temperature of the insulating substrate during the depositing does not exceed 250° C. The method can produce a thin film transistor. The disclosed ion beam deposition method forms, at lower temperature and with low impurities, a film morphology with desired smoothness and grain size. Deposition of semiconductor films on low melting point substrates, such as plastic flexible substrates, is enables.
摘要翻译：公开了一种在衬底上制备半导体膜的方法。该方法包括在沉积室中布置绝缘衬底，并使用离子束沉积将半导体膜沉积到绝缘衬底上，其中沉积期间绝缘衬底的温度不超过250℃。该方法可以产生薄膜晶体管。所公开的离子束沉积方法在较低温度和低杂质下形成具有所需光滑度和晶粒尺寸的膜形态。能够在诸如塑料柔性基底的低熔点基底上沉积半导体膜。

2. 发明申请

US20060099778A1 Method of preparing semiconductor film on a substrate 失效
标题翻译：在基板上制备半导体膜的方法
公开(公告)号：US20060099778A1
公开(公告)日：2006-05-11
申请号：US11267264
申请日：2005-11-07
申请人： Jang-yeon Kwon , Hyuk Lim , Takashi Noguchi , Young-soo Park , Suk-pil Kim , Hans Cho , Ji-sim Jung , Kyung-bae Park , Do-young Kim
发明人： Jang-yeon Kwon , Hyuk Lim , Takashi Noguchi , Young-soo Park , Suk-pil Kim , Hans Cho , Ji-sim Jung , Kyung-bae Park , Do-young Kim
IPC分类号： H01L21/20
CPC分类号： H01L29/66765 , C23C14/3464 , C23C14/46 , H01L21/0242 , H01L21/02422 , H01L21/02532 , H01L21/02631
摘要： A method of preparing a semiconductor film on a substrate is disclosed. The method includes arranging an insulating substrate in a deposition chamber and depositing a semiconductor film onto the insulating substrate using ion beam deposition, wherein a temperature of the insulating substrate during the depositing does not exceed 250° C. The method can produce a thin film transistor. The disclosed ion beam deposition method forms, at lower temperature and with low impurities, a film morphology with desired smoothness and grain size. Deposition of semiconductor films on low melting point substrates, such as plastic flexible substrates, is enables.
摘要翻译：公开了一种在衬底上制备半导体膜的方法。该方法包括在沉积室中布置绝缘衬底，并使用离子束沉积将半导体膜沉积到绝缘衬底上，其中沉积期间绝缘衬底的温度不超过250℃。该方法可以产生薄膜晶体管。所公开的离子束沉积方法在较低温度和低杂质下形成具有所需光滑度和晶粒尺寸的膜形态。能够在诸如塑料柔性基底的低熔点基底上沉积半导体膜。

3. 发明授权

US07563659B2 Method of fabricating poly-crystalline silicon thin film and method of fabricating transistor using the same 失效
标题翻译：制造多晶硅薄膜的方法和使用其制造晶体管的方法
公开(公告)号：US07563659B2
公开(公告)日：2009-07-21
申请号：US11003326
申请日：2004-12-06
申请人： Jang-yeon Kwon , Min-koo Han , Se-young Cho , Kyung-bae Park , Do-young Kim , Min-cheol Lee , Sang-myeon Han , Takashi Noguchi , Young-soo Park , Ji-sim Jung
发明人： Jang-yeon Kwon , Min-koo Han , Se-young Cho , Kyung-bae Park , Do-young Kim , Min-cheol Lee , Sang-myeon Han , Takashi Noguchi , Young-soo Park , Ji-sim Jung
IPC分类号： H01L21/00
CPC分类号： H01L21/02532 , H01L21/02164 , H01L21/02274 , H01L21/02354 , H01L21/02595 , H01L21/0262 , H01L21/02686 , H01L21/2026 , H01L21/31608 , H01L29/4908 , H01L29/66757 , H01L29/78675
摘要： A method of fabricating a poly-Si thin film and a method of fabricating a poly-Si TFT using the same are provided. The poly-Si thin film is formed at a low temperature using inductively coupled plasma chemical vapor deposition (ICP-CVD). After the ICP-CVD, excimer laser annealing (ELA) is performed while increasing energy by predetermined steps. A poly-Si active layer and a SiO2 gate insulating layer are deposited at a temperature of about 150° C. using ICP-CVD. The poly-Si has a large grain size of about 3000 Å or more. An interface trap density of the SiO2 can be as high as 1011/cm2. A transistor having good electrical characteristics can be fabricated at a low temperature and thus can be formed on a heat tolerant plastic substrate.
摘要翻译：提供一种制造多晶硅薄膜的方法和使用其制造多晶硅TFT的方法。使用电感耦合等离子体化学气相沉积（ICP-CVD）在低温下形成多晶硅薄膜。在ICP-CVD之后，在通过预定步骤增加能量的同时进行准分子激光退火（ELA）。使用ICP-CVD在约150℃的温度下沉积多晶硅有源层和SiO 2栅极绝缘层。多晶硅的大晶粒尺寸约为3000或更大。 SiO2的界面陷阱密度高达1011 / cm2。具有良好电特性的晶体管可以在低温下制造，因此可以形成在耐热塑料基板上。

4. 发明申请

US20090298268A1 Method of fabricating poly-crystalline silicon thin film and method of fabricating transistor using the same 审中-公开
标题翻译：制造多晶硅薄膜的方法和使用其制造晶体管的方法
公开(公告)号：US20090298268A1
公开(公告)日：2009-12-03
申请号：US12457586
申请日：2009-06-16
申请人： Jang-yeon Kwon , Min-koo Han , Se-young Cho , Kyung-bae Park , Do-young Kim , Min-cheol Lee , Sang-myeon Han , Takashi Noguchi , Young-soo Park , Ji-sim Jung
发明人： Jang-yeon Kwon , Min-koo Han , Se-young Cho , Kyung-bae Park , Do-young Kim , Min-cheol Lee , Sang-myeon Han , Takashi Noguchi , Young-soo Park , Ji-sim Jung
IPC分类号： H01L21/336 , H01L21/205
CPC分类号： H01L21/02532 , H01L21/02164 , H01L21/02274 , H01L21/02354 , H01L21/02595 , H01L21/0262 , H01L21/02686 , H01L21/2026 , H01L21/31608 , H01L29/4908 , H01L29/66757 , H01L29/78675
摘要： A method of fabricating a poly-Si thin film and a method of fabricating a poly-Si TFT using the same are provided. The poly-Si thin film is formed at a low temperature using ICP-CVD. After the ICP-CVD, ELA is performed while increasing energy by predetermined steps. A poly-Si active layer and a Si02 gate insulating layer are deposited at a temperature of about 150° C. using ICP-CVD. The poly-Si has a large grain size of about 3000 A or more. An interface trap density of the Si02 can be as high as lo∥/cm2. A transistor having good electrical characteristics can be fabricated at a low temperature and thus can be formed on a heat tolerant plastic substrate.
摘要翻译：提供一种制造多晶硅薄膜的方法和使用其制造多晶硅TFT的方法。使用ICP-CVD在低温下形成多晶硅薄膜。在ICP-CVD之后，在通过预定步骤增加能量的同时执行ELA。使用ICP-CVD在约150℃的温度下沉积多晶硅有源层和SiO 2栅极绝缘层。多晶硅具有约3000A以上的大晶粒尺寸。 SiO 2的界面陷阱密度可以高达lo // / cm2。具有良好电特性的晶体管可以在低温下制造，因此可以形成在耐热塑料基板上。

5. 发明申请

US20060008957A1 Method of fabricating poly-crystalline silicon thin film and method of fabricating transistor using the same 失效
标题翻译：制造多晶硅薄膜的方法和使用其制造晶体管的方法
公开(公告)号：US20060008957A1
公开(公告)日：2006-01-12
申请号：US11003326
申请日：2004-12-06
申请人： Jang-yeon Kwon , Min-koo Han , Se-young Cho , Kyung-bae Park , Do-young Kim , Min-cheol Lee , Sang-myeon Han , Takashi Noguchi , Young-soo Park , Ji-sim Jung
发明人： Jang-yeon Kwon , Min-koo Han , Se-young Cho , Kyung-bae Park , Do-young Kim , Min-cheol Lee , Sang-myeon Han , Takashi Noguchi , Young-soo Park , Ji-sim Jung
IPC分类号： H01L21/205
CPC分类号： H01L21/02532 , H01L21/02164 , H01L21/02274 , H01L21/02354 , H01L21/02595 , H01L21/0262 , H01L21/02686 , H01L21/2026 , H01L21/31608 , H01L29/4908 , H01L29/66757 , H01L29/78675
摘要： A method of fabricating a poly-Si thin film and a method of fabricating a poly-Si TFT using the same are provided. The poly-Si thin film is formed at a low temperature using ICP-CVD. After the ICP-CVD, ELA is performed while increasing energy by predetermined steps. A poly-Si active layer and a SiO2 gate insulating layer are deposited at a temperature of about 150° C. using ICP-CVD. The poly-Si has a large grain size of about 3000 Å or more. An interface trap density of the SiO2 can be as high as 1011/cm2. A transistor having good electrical characteristics can be fabricated at a low temperature and thus can be formed on a heat tolerant plastic substrate.
摘要翻译：提供一种制造多晶硅薄膜的方法和使用其制造多晶硅TFT的方法。使用ICP-CVD在低温下形成多晶硅薄膜。在ICP-CVD之后，在通过预定步骤增加能量的同时执行ELA。使用ICP-CVD在约150℃的温度下沉积多晶硅有源层和SiO 2/2栅极绝缘层。多晶硅的大晶粒尺寸约为3000或更大。 SiO 2 2的界面陷阱密度可以高达10-11 / cm 2。具有良好电特性的晶体管可以在低温下制造，因此可以形成在耐热塑料基板上。

6. 发明申请

US20090149007A1 ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：电子设备及其制造方法
公开(公告)号：US20090149007A1
公开(公告)日：2009-06-11
申请号：US12370642
申请日：2009-02-13
申请人： Ji-sim JUNG , Takashi Noguchi , Hans S. Cho , Do-young Kim , Kyung-bae Park
发明人： Ji-sim JUNG , Takashi Noguchi , Hans S. Cho , Do-young Kim , Kyung-bae Park
IPC分类号： H01L21/36
CPC分类号： H01L29/66757 , H01L29/66765 , H01L29/78603 , H01L29/78675 , H01L29/78678
摘要： Provided are an electronic device and a method of manufacturing the same. The device includes a plastic substrate, a transparent thermal conductive layer stacked on the plastic substrate, a polysilicon layer stacked on the thermal conductive layer; and a functional device disposed on the polysilicon layer. The functional device is any one of a transistor, a light emitting device, and a memory device. The functional device may be a thin film transistor including a gate stack stacked on the polysilicon layer.
摘要翻译：提供一种电子设备及其制造方法。该装置包括塑料基板，层叠在塑料基板上的透明导热层，堆叠在导热层上的多晶硅层; 以及设置在所述多晶硅层上的功能元件。功能器件是晶体管，发光器件和存储器件中的任何一个。功能器件可以是包括堆叠在多晶硅层上的栅极堆叠的薄膜晶体管。

7. 发明申请

US20060220034A1 Thin film transistor with capping layer and method of manufacturing the same 审中-公开
标题翻译：具有封盖层的薄膜晶体管及其制造方法
公开(公告)号：US20060220034A1
公开(公告)日：2006-10-05
申请号：US11369947
申请日：2006-03-08
申请人： Huaxiang Yin , Takashi Noguchi , Wenxu Xianyu , Do-young Kim , Ji-sim Jung , Jang-yeon Kwon
发明人： Huaxiang Yin , Takashi Noguchi , Wenxu Xianyu , Do-young Kim , Ji-sim Jung , Jang-yeon Kwon
IPC分类号： H01L33/00
CPC分类号： H01L29/66757 , H01L29/4908
摘要： A thin film transistor and a method of manufacturing the thin film transistor. The thin film transistor may include a substrate, a buffer layer, a polysilicon layer, a gate insulating layer and/or a gate electrode, and a capping layer. The buffer layer may be formed on the substrate. The polysilicon layer may be formed on the buffer layer, and may include a first doped region, a second doped region, and a channel region. The gate insulating layer and a gate electrode may be sequentially stacked on the channel region of the polysilicon layer. The capping layer may be stacked on the gate electrode.
摘要翻译：一种薄膜晶体管及其制造方法。薄膜晶体管可以包括衬底，缓冲层，多晶硅层，栅极绝缘层和/或栅电极以及覆盖层。缓冲层可以形成在衬底上。多晶硅层可以形成在缓冲层上，并且可以包括第一掺杂区域，第二掺杂区域和沟道区域。栅极绝缘层和栅电极可以顺序堆叠在多晶硅层的沟道区上。覆盖层可以堆叠在栅电极上。

8. 发明申请

US20060088961A1 Method of fabricating poly crystalline silicon TFT 审中-公开
标题翻译：制造多晶硅TFT的方法
公开(公告)号：US20060088961A1
公开(公告)日：2006-04-27
申请号：US11247134
申请日：2005-10-12
申请人： Ji-sim Jung , Takashi Noguchi , Do-young Kim , Jang-yeon Kwon
发明人： Ji-sim Jung , Takashi Noguchi , Do-young Kim , Jang-yeon Kwon
IPC分类号： H01L21/84 , H01L21/20
CPC分类号： H01L21/02532 , H01L21/02595 , H01L21/02686 , H01L21/2022 , H01L29/4908 , H01L29/66757
摘要： A method of fabricating a poly crystalline silicon thin film transistor (TFT) is provided. The method includes the operations of forming a poly crystalline silicon having a source, a drain, and a channel region between the source and the drain on a substrate in a predetermined pattern; forming an insulating layer on the poly crystalline silicon; forming a silicon-based heat absorption material layer on the insulating layer; exposing the source and the drain by patterning the insulating layer and the heat absorption material layer and forming a gate and a gate insulating layer corresponding to the channel region; injecting impurities into the source, the drain, and the gate; and heat processing the gate insulating layer and the heat absorption material layer by applying thermal energy to the heat absorption material layer. In the heat treatment, the gate material absorbs some of the heat and passes the remaining heat. The heat treatment of the gate insulating layer under the gate can be performed efficiently.
摘要翻译：提供一种制造多晶硅薄膜晶体管（TFT）的方法。该方法包括以预定图案形成在衬底上的源极和漏极之间具有源极，漏极和沟道区域的多晶硅的操作; 在多晶硅上形成绝缘层; 在绝缘层上形成硅基吸热材料层; 通过图案化绝缘层和吸热材料层并形成对应于沟道区的栅极和栅极绝缘层来暴露源极和漏极; 将杂质注入源极，漏极和栅极; 以及通过向吸热材料层施加热能来热处理栅绝缘层和吸热材料层。在热处理中，栅极材料吸收一些热量并传递剩余的热量。栅极下的栅极绝缘层的热处理可以有效地进行。

9. 发明申请

US20060270097A1 Organic light emitting display and method of fabricating the same 审中-公开
标题翻译：有机发光显示器及其制造方法
公开(公告)号：US20060270097A1
公开(公告)日：2006-11-30
申请号：US11440249
申请日：2006-05-24
申请人： Do-young Kim , Takashi Noguchi , Jang-yeon Kwon , Jong-man Kim , Ji-sim Jung
发明人： Do-young Kim , Takashi Noguchi , Jang-yeon Kwon , Jong-man Kim , Ji-sim Jung
IPC分类号： H01L21/00
CPC分类号： H01L27/1229 , H01L27/1214 , H01L27/1274 , H01L27/3244 , H01L29/04
摘要： An organic light emitting display includes: a substrate; a plurality of pixels which are arranged in a matrix on the substrate, each pixel having a switching transistor, a driving transistor, and an organic light emission diode (OLED). Silicon channels in the switching transistor have lower carrier mobility than silicon channels in the driving transistor. The low carrier mobility of amorphous silicon in the switching transistor prevents current leakage and the higher carrier mobility of polycrystalline silicon in the driving transistor provides a high driving speed and an extended lifetime.
摘要翻译：有机发光显示器包括：基板; 在衬底上以矩阵形式布置的多个像素，每个像素具有开关晶体管，驱动晶体管和有机发光二极管（OLED）。开关晶体管中的硅沟道具有比驱动晶体管中的硅沟道更低的载流子迁移率。开关晶体管中的非晶硅的低载流子迁移率防止电流泄漏，并且驱动晶体管中的多晶硅的较高的载流子迁移率提供高的驱动速度和延长的寿命。

10. 发明申请

US20050139919A1 Method of forming a polysilicon film, thin film transistor including a polysilicon film and method of manufacturing the same 有权
标题翻译：形成多晶硅膜的方法，包括多晶硅膜的薄膜晶体管及其制造方法
公开(公告)号：US20050139919A1
公开(公告)日：2005-06-30
申请号：US10980838
申请日：2004-11-04
申请人： Kyung-bae Park , Takashi Noguchi , Se-young Cho , Do-young Kim , Jang-yeon Kwon
发明人： Kyung-bae Park , Takashi Noguchi , Se-young Cho , Do-young Kim , Jang-yeon Kwon
IPC分类号： H01L21/20 , H01L21/00 , H01L21/336 , H01L27/01 , H01L29/786
CPC分类号： H01L29/66757 , H01L29/78603 , H01L29/78606
摘要： In a method of forming a polysilicon film, a thin film transistor including a polysilicon film, and a method of manufacturing a thin film transistor including a polysilicon film, the thin film transistor includes a substrate, a first heat conduction film on the substrate, a second heat conduction film adjacent to the first heat conduction film, the second heat conduction film having a lower thermal conductivity than the first heat conduction film, a polysilicon film on the second heat conduction film and the first heat conduction film adjacent to the second heat conduction film, and a gate stack on the polysilicon film. The second heat conduction film may either be on the first heat conduction film or, alternatively, the first heat conduction film may be non-contiguous and the second heat conduction film may be interposed between portions of the non-contiguous first heat conduction film.
摘要翻译：在形成多晶硅膜的方法中，包括多晶硅膜的薄膜晶体管和包括多晶硅膜的薄膜晶体管的制造方法，薄膜晶体管包括基板，基板上的第一导热膜，与所述第一导热膜相邻的所述第二导热膜，所述第二导热膜的热导率低于所述第一导热膜，所述第二导热膜上的多晶硅膜和与所述第二导热膜相邻的所述第一导热膜膜和多晶硅膜上的栅极堆叠。第二导热膜可以在第一导热膜上，或者第一导热膜可以不连续，并且第二导热膜可以介于不连续的第一导热膜的部分之间。

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