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1. 发明授权

US4427840A Plastic Schottky barrier solar cells 失效
标题翻译：塑料肖特基势垒太阳能电池
公开(公告)号：US4427840A
公开(公告)日：1984-01-24
申请号：US335994
申请日：1981-12-30
申请人： James R. Waldrop , Marshall J. Cohen
发明人： James R. Waldrop , Marshall J. Cohen
IPC分类号： H01L31/07 , H01L51/30 , H01L31/06
CPC分类号： H01L51/4206 , H01L31/07 , H01L51/0041 , Y02E10/549
摘要： A photovoltaic cell structure is fabricated from an active medium including an undoped, intrinsically p-type organic semiconductor comprising polyacetylene. When a film of such material is in rectifying contact with a magnesium electrode, a Schottky-barrier junction is obtained within the body of the cell structure. Also, a gold overlayer passivates the magnesium layer on the undoped polyacetylene film.
摘要翻译：光伏电池结构由包括聚乙炔的未掺杂本质上p型有机半导体的活性介质制成。当这种材料的膜与镁电极整流接触时，在电池结构的主体内获得肖特基势垒结。此外，金覆层钝化未掺杂的聚乙炔膜上的镁层。

2. 发明授权

US4999685A Schotiky barrier height for metal contacts to III-V semiconductor compounds 失效
标题翻译：金属接触到III-V半导体化合物的肖特基势垒高度
公开(公告)号：US4999685A
公开(公告)日：1991-03-12
申请号：US353271
申请日：1989-05-16
申请人： James R. Waldrop , Ronald W. Grant
发明人： James R. Waldrop , Ronald W. Grant
IPC分类号： H01L29/47
CPC分类号： H01L29/475
摘要： A metal to semiconductor contact is provided wherein the Schottky barrier ight is about 1 eV and independent of the contact metal. The metal, such as Au, Cr, or Ti, is deposited on a heavily doped p-type layer of silicon which is about 15 to 30 angstroms thick. The interface layer is deposited on gallium arsenide.
摘要翻译：提供了金属与半导体接触，其中肖特基势垒高度为约1eV且独立于接触金属。诸如Au，Cr或Ti的金属沉积在大约15至30埃厚的重掺杂p型硅层上。界面层沉积在砷化镓上。

3. 发明申请

US20090050480A1 EXHAUST GAS SENSOR 审中-公开
标题翻译：排气传感器
公开(公告)号：US20090050480A1
公开(公告)日：2009-02-26
申请号：US11844118
申请日：2007-08-23
申请人： Mario J. Arceneaux , Thomas Egner , James R. Waldrop
发明人： Mario J. Arceneaux , Thomas Egner , James R. Waldrop
IPC分类号： G01N27/26
CPC分类号： G01N27/4067 , Y10T29/49002
摘要： An exhaust gas sensor that includes a sensor element having a cup-shaped member including an outer surface and an inner surface defining a cavity. The cup-shaped member further includes an exhaust electrode coupled to the outer surface and a reference electrode coupled to the inner surface. The exhaust gas sensor further includes a heating element located within the cavity and a heat conductive material within the cavity and between the inner surface of the cup-shaped member and the heating element to facilitate heat transfer from the heating element to the sensor element.
摘要翻译：一种废气传感器，包括具有杯状构件的传感器元件，所述杯形构件包括外表面和限定空腔的内表面。杯状构件还包括联接到外表面的排气电极和连接到内表面的参考电极。排气传感器还包括位于空腔内的加热元件和空腔内的导热材料，并且在杯状构件的内表面和加热元件之间，以便于从加热元件传递到传感器元件的热传递。

4. 发明授权

US07385199B2 Microbolometer IR focal plane array (FPA) with in-situ mirco vacuum sensor and method of fabrication 有权
标题翻译：微量热计红外焦平面阵列（FPA），具有原位微型真空传感器及其制造方法
公开(公告)号：US07385199B2
公开(公告)日：2008-06-10
申请号：US11162849
申请日：2005-09-26
申请人： Roger E. DeWames , James R. Waldrop
发明人： Roger E. DeWames , James R. Waldrop
IPC分类号： G01J5/02
CPC分类号： G01J5/20 , G01L21/12
摘要： A microbolometer IR FPA is provided with in-situ vacuum sensing capability by realizing that the IR sensor microbolometer pixel element itself may be used as a vacuum sensor. The application of an electrical signal to the resistive element heats the bolometer material thereby producing a variable resistance related to vacuum level. The degree of variability for a given material depends on the efficiency of heat transfer from the material to the surrounding environment. In a good vacuum, heat transfer is poor, and thus heat will be retained in the material to produce a relatively large temperature increase and the resistance variability will be large. In a poor vacuum, heat is readily transferred to the environment and the temperature rise will be relatively small and thus resistance variability will be small. Consequently, the variable resistance magnitude can be readout to determine the vacuum level.
摘要翻译：通过实现红外传感器微测辐射计像素元件本身可以用作真空传感器，微量热计IR FPA具有原位真空感测能力。将电信号施加到电阻元件加热测辐射热量计材料，从而产生与真空水平相关的可变电阻。给定材料的变异程度取决于从材料到周围环境的热传递效率。在良好的真空中，传热差，因此热量将保留在材料中以产生相对较大的温度升高，并且电阻变化性将变大。在真空度较差的情况下，热量容易转移到环境中，并且温度上升将相对较小，因此电阻变化性将变小。因此，可读出可变电阻幅值以确定真空度。

5. 发明授权

US4833042A Nonalloyed ohmic contacts for n type gallium arsenide 失效
标题翻译： n型砷化镓的非合金欧姆接触
公开(公告)号：US4833042A
公开(公告)日：1989-05-23
申请号：US148797
申请日：1988-01-27
申请人： James R. Waldrop , Ronald W. Grant
发明人： James R. Waldrop , Ronald W. Grant
IPC分类号： H01L21/285 , H01L29/45
CPC分类号： H01L21/28575 , H01L29/452 , Y10S148/139 , Y10S148/14 , Y10T428/12528 , Y10T428/12674
摘要： The invention is a layered nonalloyed ohmic contact structure for use on n type gallium arsenide including a layer of germanium or silicon of the order of 10 .ANG. thick evaporated onto the gallium arsenide; a diffusion barrier layer of material 100-200 .ANG. thick over the germanium or silicon selected from non-metallic conducting compounds, including metal compounds ofarsenidephosphidecarbideboridenitridesilicideand non-metallic conducting elements; with the diffusion barrier layer material characterized by resistivity of the order of 1 ohm cm or less; and a conducting metal overlayer on the diffusion barrier layer. The invention includes the method for manufacturing the contact structure.
摘要翻译：本发明是用于n型砷化镓的分层非合金欧姆接触结构，其包括在砷化镓上蒸发的厚度为10埃的锗或硅层; 选自非金属导电化合物，包括砷化磷化碳化钨硼化物氮化硅化物和非金属导电元素的金属化合物的锗或硅上的材料100-200的扩散阻挡层; 扩散阻挡层材料的特征在于电阻率为1欧姆厘米或更小; 和扩散阻挡层上的导电金属覆层。本发明包括接触结构的制造方法。

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