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1. 发明申请

US20060289966A1 Silicon wafer with non-soluble protective coating 审中-公开
标题翻译：具有不溶性保护涂层的硅片
公开(公告)号：US20060289966A1
公开(公告)日：2006-12-28
申请号：US11159515
申请日：2005-06-22
申请人： Ashay Dani , Gudbjorg Oskarsdottir , James Matayabas
发明人： Ashay Dani , Gudbjorg Oskarsdottir , James Matayabas
IPC分类号： H01L23/58 , H01L21/822
CPC分类号： H01L21/6835 , H01L21/78 , H01L2221/6834
摘要： A silicon wafer with an array of integrated circuit (IC) dies formed on the wafer is provided with a protective coat applied to a surface of the wafer to protect the IC dies from debris created during a laser scribing process. The IC dies can include die bumps that can be adversely affected by debris from the laser scribing process. The protective coat is a tape or a film that may be optically transparent, chemically non-reactive to the laser energy and formed of material that can be ablated by the laser scribing. The protective coat is removed from the IC dies after laser scribing leaving the IC dies and die bumps clean of any debris, thereby decreasing the number of defective dies.
摘要翻译：具有在晶片上形成的集成电路（IC）模具阵列的硅晶片设置有施加到晶片表面的保护涂层，以保护IC芯片免受在激光划线过程中产生的碎片。 IC芯片可以包括可以受到来自激光划线工艺的碎片的不利影响的模具凸块。保护涂层是可以是光学透明的，或与激光能量化学反应性不同的胶带或薄膜，并且可以通过激光划线而被烧蚀的材料形成。在激光划线后，保护涂层从IC芯片中移除，使IC芯片和模具凸块清洁任何碎屑，从而减少有缺陷的裸片的数量。

2. 发明申请

US20060027850A1 Polymer device with a nanocomposite barrier layer 有权
标题翻译：具有纳米复合阻挡层的聚合物装置
公开(公告)号：US20060027850A1
公开(公告)日：2006-02-09
申请号：US10914862
申请日：2004-08-09
申请人： James Matayabas , Gudbjorg Oskarsdottir
发明人： James Matayabas , Gudbjorg Oskarsdottir
IPC分类号： H01L29/94
CPC分类号： G11C11/22 , B82Y10/00 , Y10T428/3154 , Y10T428/31544 , Y10T428/31699
摘要： According to one aspect of the invention, a polymer device and a method of constructing a polymer device are provided. The polymer device includes a first conductor, a second conductor, and a polymeric body between the first and second conductors. The polymeric body includes a polymer material and a phyllosilicate material.
摘要翻译：根据本发明的一个方面，提供了一种聚合物装置和一种构建聚合物装置的方法。聚合物装置包括第一导体，第二导体和在第一和第二导体之间的聚合体。聚合物主体包括聚合物材料和页硅酸盐材料。

3. 发明申请

US20060065984A1 Package stress management 有权
公开(公告)号：US20060065984A1
公开(公告)日：2006-03-30
申请号：US11282255
申请日：2005-11-18
申请人： James Matayabas , Gudbjorg Oskarsdottir , Mitesh Patel
发明人： James Matayabas , Gudbjorg Oskarsdottir , Mitesh Patel
IPC分类号： H01L21/50 , H01L23/29 , H01L21/48 , H01L21/44
CPC分类号： H01L23/3128 , H01L23/3135 , H01L24/48 , H01L24/73 , H01L24/81 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/81801 , H01L2224/82 , H01L2224/85 , H01L2224/86 , H01L2924/00014 , H01L2924/01079 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/3511 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： Numerous embodiments of an apparatus and method to stress and warpage of semiconductor packages are described. In one embodiment, a semiconductor die is disposed above a substrate. An encapsulating material is disposed above the substrate and semiconductor die, in which the encapsulating material has a combination of a low coefficient of thermal expansion material and a high coefficient of thermal expansion material.

4. 发明申请

US20060001158A1 Package stress management 有权
标题翻译：包应力管理
公开(公告)号：US20060001158A1
公开(公告)日：2006-01-05
申请号：US10882783
申请日：2004-06-30
申请人： James Matayabas , Gudbjorg Oskarsdottir , Mitesh Patel
发明人： James Matayabas , Gudbjorg Oskarsdottir , Mitesh Patel
IPC分类号： H01L21/44 , H01L23/48
CPC分类号： H01L23/3128 , H01L23/3135 , H01L24/48 , H01L24/73 , H01L24/81 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/81801 , H01L2224/82 , H01L2224/85 , H01L2224/86 , H01L2924/00014 , H01L2924/01079 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/3511 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： Numerous embodiments of an apparatus and method to stress and warpage of semiconductor packages are described. In one embodiment, a semiconductor die is disposed above a substrate. An encapsulating material is disposed above the substrate and semiconductor die, in which the encapsulating material has a combination of a low coefficient of thermal expansion material and a high coefficient of thermal expansion material.
摘要翻译：描述了半导体封装的应力和翘曲的装置和方法的许多实施例。在一个实施例中，半导体管芯设置在衬底之上。封装材料设置在基板和半导体管芯上方，其中封装材料具有低热膨胀系数和高热膨胀系数的组合。

5. 发明申请

US20070134599A1 In-situ functionalization of carbon nanotubes 有权
标题翻译：碳纳米管的原位官能化
公开(公告)号：US20070134599A1
公开(公告)日：2007-06-14
申请号：US11304403
申请日：2005-12-14
申请人： Nachiket Raravikar , James Matayabas
发明人： Nachiket Raravikar , James Matayabas
IPC分类号： G03C5/00
CPC分类号： B81C1/00206 , B82Y30/00 , B82Y40/00 , C01B32/16 , C01B32/174 , C01B2202/02 , C01B2202/06 , C01B2202/08 , H01L23/373 , H01L23/433 , H01L24/28 , H01L24/31 , H01L2224/16225 , H01L2224/73253 , H01L2924/01006 , H01L2924/01019 , H01L2924/0105 , H01L2924/01074 , H01L2924/01075 , H01L2924/01077 , H01L2924/10253 , H01L2924/14 , H01L2924/16152 , Y10S977/742 , Y10S977/745 , Y10S977/746 , Y10T428/25 , H01L2924/00
摘要： An embodiment of the present invention is a technique to functionalize carbon nanotubes in situ. A carbon nanotube (NT) array is grown or deposited on a substrate. The NT array is functionalized in situ with a polymer by partial thermal degradation of the polymer to form a NT structure. The functionalization of the NT structure is characterized. The functionalized NT structure is processed according to the characterized functionalization.
摘要翻译：本发明的一个实施方案是用于原位官能化碳纳米管的技术。碳纳米管（NT）阵列生长或沉积在基底上。 NT阵列与聚合物原位官能化，聚合物通过部分热降解形成NT结构。特征是NT结构的功能化。功能化的NT结构根据表征的功能化进行处理。

6. 发明申请

US20050124785A1 Encapsulant mixture having a polymer bound catalyst 失效
标题翻译：具有聚合物结合催化剂的密封剂混合物
公开(公告)号：US20050124785A1
公开(公告)日：2005-06-09
申请号：US10731852
申请日：2003-12-08
申请人： James Matayabas
发明人： James Matayabas
IPC分类号： C08G59/18 , C08G59/24 , C08G59/40 , C08G59/68 , H01L21/56 , H01L23/29 , H01L21/44 , C08G65/34 , H01L21/48 , H01L21/50
CPC分类号： C08G59/245 , C08G59/18 , H01L21/565 , H01L23/293 , H01L2924/0002 , H01L2924/00
摘要： A method of constructing a microelectronic assembly as provided. A mold piece is locating over a microelectronic die carrying an integrated circuit. An encapsulant is injected into a space defined between surfaces of the mold piece and the microelectronic die. The encapsulant includes a liquid phase epoxy and a solid phase catalyst compound when injected. The encapsulant mixture is heated in the space to a temperature where the catalyst compound becomes a liquid and cures the epoxy. The catalyst compound may, for example, be polystyrene and the catalyst may be diphenyl phosphine. The catalyst compound is then heated to above its glass transition temperature so that the diphenyl phosphine is released from the polystyrene. The diphenyl phosphine then cures the epoxy. The epoxy is preferably a liquid at room temperature.
摘要翻译：提供的构造微电子组件的方法。模具位于承载集成电路的微电子管芯上。将密封剂注入到在模具的表面和微电子模具之间限定的空间中。注射剂包括液相环氧树脂和固相催化剂化合物。将密封剂混合物在该空间中加热到催化剂化合物变成液体并固化环氧树脂的温度。催化剂化合物可以是例如聚苯乙烯，催化剂可以是二苯基膦。然后将催化剂化合物加热至高于其玻璃化转变温度，使得二苯基膦从聚苯乙烯释放。二苯基膦然后固化环氧树脂。环氧树脂在室温下优选为液体。

7. 发明申请

US20050041406A1 Phase change thermal interface materials including polyester resin 有权
标题翻译：相变热界面材料包括聚酯树脂
公开(公告)号：US20050041406A1
公开(公告)日：2005-02-24
申请号：US10631912
申请日：2003-07-30
申请人： James Matayabas , Paul Koning
发明人： James Matayabas , Paul Koning
IPC分类号： C09K5/06 , H01L23/373 , H01L23/427 , H05K1/14
CPC分类号： C09K5/063 , H01L23/3737 , H01L23/4275 , H01L24/29 , H01L2224/2929 , H01L2224/293 , H01L2224/29386 , H01L2224/32245 , H01L2224/8385 , H01L2924/14 , H01L2924/00
摘要： An embodiment of a phase change TIM of this invention comprises a polyester matrix with melting temperature near or below operating temperature (typically less than about 130° C.), thermally conductive filler with bulk thermal conductivity greater than about 50 W/mK, and optionally other additives. The polyester resin has improved thermo-oxidative stability compared to the polyolefin resins, thereby providing improved reliability performance during test.
摘要翻译：本发明的相变TIM的实施方案包括熔融温度接近或低于工作温度（通常小于约130℃）的聚酯基质，体积导热率大于约50W / mK的导热填料，以及任选的其他添加剂。与聚烯烃树脂相比，聚酯树脂具有改善的热氧化稳定性，从而在测试期间提供改进的可靠性。

8. 发明申请

US20070262421A1 Thermoset polyimides for microelectronic applications 失效
标题翻译：用于微电子应用的热固性聚酰亚胺
公开(公告)号：US20070262421A1
公开(公告)日：2007-11-15
申请号：US11432986
申请日：2006-05-12
申请人： Stephen Lehman , James Matayabas , Saikumar Jayaraman
发明人： Stephen Lehman , James Matayabas , Saikumar Jayaraman
IPC分类号： H01L23/29 , H01L21/56
CPC分类号： H01L23/24 , C08G73/10 , C08L79/08 , C08L2203/20 , C08L2205/02 , H01L21/563 , H01L21/566 , H01L24/29 , H01L2224/16225 , H01L2224/32225 , H01L2224/73203 , H01L2224/73204 , H01L2224/73253 , H01L2924/01029 , H01L2924/01078 , H01L2924/10253 , H01L2924/14 , H01L2924/181 , H01L2924/00012 , H01L2924/3512 , H01L2924/00
摘要： Dendrimer/hyperbranched materials are combined with polyimide to form a low CTE material for use as a dielectric substrate layer or an underfill. In the alternative, ruthenium carbene complexes are used to catalyze ROMP cross-linking reactions in polyimides to produce a class of cross-linkable, thermal and mechanical stable material for use as a dielectric substrate or underfill. In another alternative, dendrimers/hyperbranched materials are synthesized by different methods to produce low viscosity, high Tg, fast curing, mechanically and chemically stable materials for imprinting applications.
摘要翻译：树枝状聚合物/超支化材料与聚酰亚胺组合以形成用作电介质基底层或底部填充剂的低CTE材料。另一方面，钌卡宾络合物用于催化聚酰亚胺中的ROMP交联反应，以产生用作电介质基底或底部填充剂的一类可交联，热和机械稳定的材料。在另一种替代方案中，树枝状大分子/超支化材料通过不同的方法合成，以产生用于印记应用的低粘度，高Tg，快速固化，机械和化学稳定的材料。

9. 发明申请

US20070135550A1 Negative thermal expansion material filler for low CTE composites 审中-公开
标题翻译：用于低CTE复合材料的负热膨胀材料填料
公开(公告)号：US20070135550A1
公开(公告)日：2007-06-14
申请号：US11304013
申请日：2005-12-14
申请人： Nirupama Chakrapani , James Matayabas , Paul Koning
发明人： Nirupama Chakrapani , James Matayabas , Paul Koning
IPC分类号： H01L21/56 , C09D5/08 , C08K3/22
CPC分类号： C08K3/013 , B82Y30/00 , H01L21/563 , H01L23/295 , H01L23/3121 , H01L23/49894 , H01L24/29 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2224/16225 , H01L2224/16227 , H01L2224/29 , H01L2224/2919 , H01L2224/29198 , H01L2224/2929 , H01L2224/293 , H01L2224/32225 , H01L2224/32245 , H01L2224/48227 , H01L2224/73203 , H01L2224/73253 , H01L2224/73265 , H01L2224/83102 , H01L2224/8385 , H01L2224/92125 , H01L2924/00013 , H01L2924/00014 , H01L2924/01006 , H01L2924/01023 , H01L2924/0104 , H01L2924/01072 , H01L2924/0665 , H01L2924/07802 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： The present invention relates to a filler featuring a negative coefficient of thermal expansion and a bi-modal size distribution of filler particles. In an embodiment, the filler has micron and nanometer size filler particles. The present invention also relates to a composite having a polymer and a filler with nanometer size filler particles. Additionally, the present invention discloses a method of forming an electronic package with a composite having a polymer and a filler with nanometer size filler particles.
摘要翻译：本发明涉及一种具有负的热膨胀系数和填料颗粒的双模尺寸分布的填料。在一个实施方案中，填料具有微米和纳米尺寸的填料颗粒。本发明还涉及一种具有聚合物和具有纳米尺寸填料颗粒的填料的复合材料。此外，本发明公开了一种用具有纳米尺寸填料颗粒的聚合物和填料的复合材料形成电子封装的方法。

10. 发明申请

US20050287355A1 Dielectric film with low coefficient of thermal expansion (CTE) using liquid crystalline resin 有权
标题翻译：使用液晶树脂的低热膨胀系数（CTE）的介电薄膜
公开(公告)号：US20050287355A1
公开(公告)日：2005-12-29
申请号：US10876508
申请日：2004-06-25
申请人： James Matayabas
发明人： James Matayabas
IPC分类号： H01L21/56 , H01L21/768 , H01L23/532 , H05K3/46 , B32B5/16 , B05D7/00
CPC分类号： H01L23/53295 , H01L21/563 , H01L21/76828 , H01L23/5329 , H01L2924/0002 , H05K3/4626 , H05K2201/0141 , H05K2201/068 , H05K2203/104 , Y10T428/25 , H01L2924/00
摘要： An embodiment of the present invention is a technique to provide a dielectric film material with a controllable coefficient of thermal expansion (CTE). A first compound containing a first liquid crystalline component is formed. The first compound is cast into a first film. The first film is oriented in an magnetic or electromagnetic field in a first direction. The first film is cured at a first temperature.
摘要翻译：本发明的实施例是提供具有可控制的热膨胀系数（CTE）的电介质膜材料的技术。形成含有第一液晶成分的第一化合物。第一种化合物被铸成第一片。第一膜在第一方向上的磁场或电磁场中取向。第一个膜在第一个温度下固化。

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