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1. 发明申请

US20060139561A1 Mold for forming spacers for flat panel displays 审中-公开
标题翻译：用于形成用于平板显示器的间隔件的模具
公开(公告)号：US20060139561A1
公开(公告)日：2006-06-29
申请号：US11356907
申请日：2006-02-17
申请人： James Hofmann , Brian Vaartstra , Brenda Kraus , Donald Westmoreland
发明人： James Hofmann , Brian Vaartstra , Brenda Kraus , Donald Westmoreland
IPC分类号： G02F1/1339
CPC分类号： G03F7/0017 , B29C33/3857 , G02F1/1339 , G02F1/13394 , H01J2211/36 , Y10T428/1059
摘要： The present invention describes thick film photolithographic molds, methods of making thick film photolithographic molds, and methods of using thick film photolithographic molds to form spacers on a substrate. The thick film photolithographic molds preferably comprise an epoxy bisphenol A novolac resin. The present invention also describes sol gel spacers comprising sodium silicates and potassium silicates. The thick film photolithographic molds and sol gel spacers of the present invention can be used in flat panel displays, such as field emission displays and plasma displays.
摘要翻译：本发明描述了厚膜光刻模具，制备厚膜光刻模具的方法，以及使用厚膜光刻模具在衬底上形成间隔物的方法。厚膜光刻模优选包含环氧双酚A酚醛清漆树脂。本发明还描述了包含硅酸钠和硅酸钾的溶胶凝胶间隔物。本发明的厚膜光刻模和溶胶凝胶间隔物可用于诸如场发射显示器和等离子体显示器的平板显示器中。

2. 发明申请

US20050112298A1 Method for making sol gel spacers for flat panel displays 审中-公开
标题翻译：制造平板显示器用溶胶凝胶垫片的方法
公开(公告)号：US20050112298A1
公开(公告)日：2005-05-26
申请号：US10978323
申请日：2004-11-01
申请人： James Hofmann , Brian Vaartstra , Brenda Kraus , Donald Westmoreland
发明人： James Hofmann , Brian Vaartstra , Brenda Kraus , Donald Westmoreland
IPC分类号： B05D5/12 , B29C33/38 , B29C59/00 , G02F1/1339
CPC分类号： G03F7/0017 , B29C33/3857 , G02F1/1339 , G02F1/13394 , H01J2211/36 , Y10T428/1059
摘要： The present invention describes thick film photolithographic molds, methods of making thick film photolithographic molds, and methods of using thick film photolithographic molds to form spacers on a substrate. The thick film photolithographic molds preferably comprise an epoxy bisphenol A novolac resin. The present invention also describes sol gel spacers comprising sodium silicates and potassium silicates. The thick film photolithographic molds and sol gel spacers of the present invention can be used in flat panel displays, such as field emission displays and plasma displays.
摘要翻译：本发明描述了厚膜光刻模具，制备厚膜光刻模具的方法，以及使用厚膜光刻模具在衬底上形成间隔物的方法。厚膜光刻模优选包含环氧双酚A酚醛清漆树脂。本发明还描述了包含硅酸钠和硅酸钾的溶胶凝胶间隔物。本发明的厚膜光刻模和溶胶凝胶间隔物可用于诸如场发射显示器和等离子体显示器的平板显示器中。

3. 发明申请

US20070045856A1 Mixed metal nitride and boride barrier layers 审中-公开
标题翻译：混合金属氮化物和硼化物阻挡层
公开(公告)号：US20070045856A1
公开(公告)日：2007-03-01
申请号：US11509066
申请日：2006-08-24
申请人： Brian Vaartstra , Donald Westmoreland
发明人： Brian Vaartstra , Donald Westmoreland
IPC分类号： H01L23/48 , H01L23/52 , H01L29/94
CPC分类号： H01L21/7687 , H01L21/28556 , H01L21/76843 , H01L21/76897 , H01L23/485 , H01L27/10811 , H01L27/10855 , H01L27/10888 , H01L28/75 , H01L28/90 , H01L29/456 , H01L2924/0002 , Y10S438/932 , H01L2924/00
摘要： Mixed metal aluminum nitride and boride diffusion barriers and electrodes for integrated circuits, particularly for DRAM cell capacitors. Also provided are methods for CVD deposition of MxAlyNzBw alloy diffusion barriers, wherein M is Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, or W; x is greater than zero; y is greater than or equal to zero; the sum of z and w is greater than zero; and wherein when y is zero, z and w are both greater than zero.
摘要翻译：用于集成电路的混合金属氮化铝和硼化物扩散阻挡层和电极，特别适用于DRAM单元电容器。还提供了用于CVD沉积M x Al 2 O 3合金扩散阻挡层的方法，其中M 是Ti，Zr，Hf，V，Nb，Ta，Cr，Mo或W; x大于零; y大于或等于零; z和w的和大于零; 并且其中当y为零时，z和w都大于零。

4. 发明申请

US20060046521A1 Deposition methods using heteroleptic precursors 有权
标题翻译：使用杂音前体的沉积方法
公开(公告)号：US20060046521A1
公开(公告)日：2006-03-02
申请号：US10932149
申请日：2004-09-01
申请人： Brian Vaartstra , Donald Westmoreland , Eugene Marsh , Stefan Uhlenbrock
发明人： Brian Vaartstra , Donald Westmoreland , Eugene Marsh , Stefan Uhlenbrock
IPC分类号： H01L21/31
CPC分类号： C23C16/45553 , C23C16/34 , C23C16/405 , H01L21/0228 , H01L21/3141
摘要： An ALD method includes exposing a substrate to a first precursor including a plurality of different ligands, chemisorbing a precursor monolayer on the substrate, and reacting a second precursor with the precursor monolayer to yield a product monolayer. A surface reactive ligand exhibits a chemisorption affinity that exceeds the chemisorption affinity exhibited by a gas reactive ligand. Another deposition method includes exposing a substrate to a precursor containing an amino and/or imino ligand and a halide ligand and depositing a layer. The precursor exhibits a volatility that exceeds the volatility with a halide ligand taking the place of each amino and/or imino ligand. The precursor exhibits a thermal stability that exceeds the thermal stability with an amino and/or imino ligand taking the place of each halide ligand. The layer may exhibit less halogen content than with a halide ligand taking the place of each amino and/or imino ligand.
摘要翻译： ALD方法包括将底物暴露于包含多个不同配体的第一前体，化学吸附底物上的前体单层，以及使第二前体与前体单层反应以产生产物单层。表面反应性配体表现出超过气体反应性配体显示的化学吸附亲和力的化学吸附亲和力。另一种沉积方法包括将底物暴露于含有氨基和/或亚氨基配体和卤化物配体的前体并沉积一层。前体表现出挥发性，其挥发性用卤化物配体取代每个氨基和/或亚氨基配体。前体表现出超过热稳定性的热稳定性，氨基和/或亚氨基配体取代每个卤化物配体。该层可以表现出比卤化物配体更少的卤素含量，代替每个氨基和/或亚氨基配体。

5. 发明申请

US20050287819A1 Systems and methods for forming metal oxides using metal organo-amines and metal organo-oxides 审中-公开
标题翻译：使用金属有机胺和金属有机氧化物形成金属氧化物的体系和方法
公开(公告)号：US20050287819A1
公开(公告)日：2005-12-29
申请号：US11216629
申请日：2005-08-31
申请人： Brian Vaartstra , Donald Westmoreland
发明人： Brian Vaartstra , Donald Westmoreland
IPC分类号： C23C16/40 , C23C16/44 , C23C16/455 , H01L21/316 , H01L21/822 , H01L21/8242 , H01L21/8244 , H01L21/8246 , H01L27/04 , H01L27/105 , H01L27/108 , H01L27/11 , H01L29/78 , H01L21/31 , H01L21/8234
CPC分类号： H01L21/02205 , C23C16/405 , C23C16/45531 , C23C16/45553 , H01L21/02175 , H01L21/02194 , H01L21/02271 , H01L21/0228 , H01L21/31604
摘要： A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposit ion process and one or more precursor compounds that include organo-amine ligands and one or more precursor compounds that include organo-oxide ligands.
摘要翻译：使用气相沉积离子法和一种或多种前体化合物（其包括有机胺配体和一种或多种前体）形成（和用于形成）金属氧化物层的方法，特别是半导体衬底或衬底组件包括有机氧化物配体的化合物。

6. 发明授权

US08609221B2 Alternating self-assembling morphologies of diblock copolymers controlled by variations in surfaces 有权
标题翻译：通过表面变化控制的二嵌段共聚物的交替自组装形态
公开(公告)号：US08609221B2
公开(公告)日：2013-12-17
申请号：US12834097
申请日：2010-07-12
申请人： Dan B. Millward , Donald Westmoreland , Gurtej Sandhu
发明人： Dan B. Millward , Donald Westmoreland , Gurtej Sandhu
IPC分类号： B32B3/30
CPC分类号： H01J37/02 , B81C1/00031 , B81C2201/0149 , B81C2201/0198 , B82Y30/00 , G03F7/0002 , G03F7/265 , Y10T428/24 , Y10T428/24149 , Y10T428/24174 , Y10T428/2438
摘要： Methods for fabricating sublithographic, nanoscale microstructures arrays including openings and linear microchannels utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. In some embodiments, the films can be used as a template or mask to etch openings in an underlying material layer.
摘要翻译：提供了使用自组装嵌段共聚物制造包括开口和线性微通道的亚光刻纳米尺度微结构阵列的方法，以及由这些方法形成的膜和器件。在一些实施例中，膜可以用作模板或掩模来蚀刻下层材料层中的开口。

7. 发明授权

US08404124B2 Alternating self-assembling morphologies of diblock copolymers controlled by variations in surfaces 有权
公开(公告)号：US08404124B2
公开(公告)日：2013-03-26
申请号：US11761589
申请日：2007-06-12
申请人： Dan B. Millward , Donald Westmoreland , Gurtej Sandhu
发明人： Dan B. Millward , Donald Westmoreland , Gurtej Sandhu
IPC分类号： B44C1/22 , B82B3/00 , H01L21/302 , B82Y40/00
CPC分类号： H01J37/02 , B81C1/00031 , B81C2201/0149 , B81C2201/0198 , B82Y30/00 , G03F7/0002 , G03F7/265 , Y10T428/24 , Y10T428/24149 , Y10T428/24174 , Y10T428/2438
摘要： Methods for fabricating sublithographic, nanoscale microstructures arrays including openings and linear microchannels utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. In some embodiments, the films can be used as a template or mask to etch openings in an underlying material layer.

8. 发明申请

US20090274887A1 Graphoepitaxial Self-Assembly of Arrays of Downward Facing Half-Cylinders 有权
标题翻译：向下表面半圆柱阵列的自顶向自组装
公开(公告)号：US20090274887A1
公开(公告)日：2009-11-05
申请号：US12114173
申请日：2008-05-02
申请人： Dan B. Millward , Donald Westmoreland
发明人： Dan B. Millward , Donald Westmoreland
IPC分类号： B32B23/00 , B05D3/02 , B44C1/22
CPC分类号： H01L29/0657 , B81C1/00031 , B81C2201/0149 , B81C2201/0198 , B82Y30/00 , G03F7/0002 , H01L21/02118 , H01L21/0223 , H01L29/06 , Y10S438/947 , Y10S977/888 , Y10S977/895 , Y10S977/90 , Y10T428/24182 , Y10T428/24521 , Y10T428/2462 , Y10T428/249921
摘要： Methods for fabricating sublithographic, nanoscale microstructures in line arrays utilizing self-assembling block copolymers, and films and devices formed from these methods are provided.
摘要翻译：提供了利用自组装嵌段共聚物在线阵列中制备亚光刻纳米级微结构的方法，以及由这些方法形成的膜和器件。

9. 发明申请

US20060070574A1 Method and system for binding halide-based contaminants 有权
公开(公告)号：US20060070574A1
公开(公告)日：2006-04-06
申请号：US11218773
申请日：2005-09-01
申请人： Garo Derderian , Cem Basceri , Donald Westmoreland
发明人： Garo Derderian , Cem Basceri , Donald Westmoreland
IPC分类号： C23C16/00
CPC分类号： H01L29/06 , B01J20/3483 , B01J38/02 , C23C16/08 , C23C16/34 , C23C16/4404 , C23C16/4412 , H01L21/324 , H01L23/58 , H01L2924/0002 , Y10T428/31678 , H01L2924/00
摘要： A method and apparatus are presented for reducing halide-based contamination within deposited titanium-based thin films. Halide adsorbing materials are utilized within the deposition chamber to remove halides, such as chlorine and chlorides, during the deposition process so that contamination of the titanium-based film is minimized. A method for regenerating the halide adsorbing material is also provided.

10. 发明授权

US07250367B2 Deposition methods using heteroleptic precursors 有权
标题翻译：使用杂音前体的沉积方法
公开(公告)号：US07250367B2
公开(公告)日：2007-07-31
申请号：US10932149
申请日：2004-09-01
申请人： Brian A. Vaartstra , Donald Westmoreland , Eugene P. Marsh , Stefan Uhlenbrock
发明人： Brian A. Vaartstra , Donald Westmoreland , Eugene P. Marsh , Stefan Uhlenbrock
IPC分类号： H01L21/44
CPC分类号： C23C16/45553 , C23C16/34 , C23C16/405 , H01L21/0228 , H01L21/3141
摘要： An ALD method includes exposing a substrate to a first precursor including a plurality of different ligands, chemisorbing a precursor monolayer on the substrate, and reacting a second precursor with the precursor monolayer to yield a product monolayer. A surface reactive ligand exhibits a chemisorption affinity that exceeds the chemisorption affinity exhibited by a gas reactive ligand. Another deposition method includes exposing a substrate to a precursor containing an amino and/or imino ligand and a halide ligand and depositing a layer. The precursor exhibits a volatility that exceeds the volatility with a halide ligand taking the place of each amino and/or imino ligand. The precursor exhibits a thermal stability that exceeds the thermal stability with an amino and/or imino ligand taking the place of each halide ligand. The layer may exhibit less halogen content than with a halide ligand taking the place of each amino and/or imino ligand.
摘要翻译： ALD方法包括将底物暴露于包含多个不同配体的第一前体，化学吸附底物上的前体单层，以及使第二前体与前体单层反应以产生产物单层。表面反应性配体表现出超过气体反应性配体显示的化学吸附亲和力的化学吸附亲和力。另一种沉积方法包括将底物暴露于含有氨基和/或亚氨基配体和卤化物配体的前体并沉积一层。前体表现出挥发性，其挥发性用卤化物配体取代每个氨基和/或亚氨基配体。前体表现出超过热稳定性的热稳定性，氨基和/或亚氨基配体取代每个卤化物配体。该层可以表现出比卤化物配体更少的卤素含量，代替每个氨基和/或亚氨基配体。

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