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    • 4. 发明授权
    • Polymers and photoresist compositions comprising same
    • 包含其的聚合物和光致抗蚀剂组合物
    • US06379861B1
    • 2002-04-30
    • US09510069
    • 2000-02-22
    • Peter Trefonas, IIIGary N. TaylorGeorge G. Barclay
    • Peter Trefonas, IIIGary N. TaylorGeorge G. Barclay
    • G03C172
    • G03F7/0392G03F7/0397Y10S430/111Y10S430/115
    • The present invention provides novel polymers and photoresist compositions that comprise the polymers as a resin binder component. The photoresist compositions of the invention can provide highly resolved relief images upon exposure to short wavelengths, including 193 nm and 248 nm. The resists of the invention are also useful or imaging at other wavelengths such as 365 nm. Polymers of the invention include those that comprise a photogenerated acid-labile unit that is ester group that comprises an alkyl moiety having about 5 or more carbon atoms and at least two secondary, tertiary or quaternary carbon atoms. The alkyl moiety of the ester group can be a noncyclic or single ring alicyclic group. The carboxyl (C═O(O)) oxygen of the ester group is often preferably directly bonded to a quaternary carbon atom.
    • 本发明提供了包含作为树脂粘合剂组分的聚合物的新型聚合物和光致抗蚀剂组合物。 本发明的光致抗蚀剂组合物可以在暴露于包括193nm和248nm的短波长的情况下提供高度分辨的浮雕图像。 本发明的抗蚀剂也可用于其它波长例如365nm。 本发明的聚合物包括包含光生酸不稳定单元的那些,其是包含具有约5个或更多个碳原子和至少两个仲,叔或季碳原子的烷基部分的酯基。 酯基的烷基部分可以是非环或单环脂环族基团。 酯基的羧基(C = O(O))氧通常优选直接键合到季碳原子。
    • 10. 发明授权
    • Compositions and processes for photolithography
    • 光刻的组成和工艺
    • US09507260B2
    • 2016-11-29
    • US12592160
    • 2009-11-19
    • Deyan WangChunyi WuCheng-Bai XuGeorge G. Barclay
    • Deyan WangChunyi WuCheng-Bai XuGeorge G. Barclay
    • G03F7/039G03F7/20G03F7/004G03F7/038G03F7/11G03F7/075
    • G03F7/0046G03F7/0382G03F7/0392G03F7/0397G03F7/0757G03F7/11G03F7/2041
    • New photoresist compositions are provided that are useful for immersion lithography. In one preferred aspect, photoresist composition are provided that comprise: (i) one or more resins that comprise photoacid-labile groups, (ii) a photoactive component, and (iii) one or more materials that comprise photoacid labile groups and that are distinct from the one or more resins; wherein the deprotection activation energy of photoacid-labile groups of the one or more materials is about the same as or lower than the deprotection activation energy of photoacid-labile groups of the one or more resins. In another preferred aspect, photoresist compositions are provided that comprise (i) one or more resins, (ii) a photoactive component, and (iii) one or more materials that comprise a sufficient amount of acidic groups to provide a dark field dissolution rate of at least one angstrom per second.
    • 提供了可用于浸没式光刻的新的光致抗蚀剂组合物。 在一个优选的方面,提供光致抗蚀剂组合物,其包含:(i)一种或多种包含光酸不稳定基团的树脂,(ii)光活性组分,和(iii)一种或多种包含光致酸不稳定基团并且是不同的 从一种或多种树脂; 其中所述一种或多种材料的光致酸不稳定基团的去保护活化能大约等于或低于所述一种或多种树脂的光致酸不稳定基团的去保护活化能。 在另一个优选的方面,提供光致抗蚀剂组合物,其包含(i)一种或多种树脂,(ii)光活性组分,和(iii)一种或多种包含足够量的酸性基团以提供暗场溶解速率的材料 每秒至少一埃。