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    • 2. 发明申请
    • Thermally operated switch control memory cell
    • 热操作开关控制存储单元
    • US20050002267A1
    • 2005-01-06
    • US10875082
    • 2004-06-23
    • James DaughtonArthur Pohm
    • James DaughtonArthur Pohm
    • G01R20060101G11C11/00G11C11/16H01L31/119
    • H01L27/228G11C11/16H01L43/10
    • A ferromagnetic thin-film based digital memory having a substrate supporting bit structures that are electrically interconnected with information storage and retrieval circuitry and having magnetic material films in which a characteristic magnetic property is substantially maintained below an associated critical temperature above which such magnetic property is not maintained separated by at least one layer of a nonmagnetic material with each bit structure having an interconnection structure providing electrical contact thereto at a contact surface thereof substantially parallel to the intermediate layer positioned between the first contact surface and the substrate. A plurality of word line structures located across from a corresponding one of the bit structures on an opposite side of the intermediate layer of a corresponding one of said bit structures from its interconnection structure provides electrical contact thereto. Sufficient electrical current selectively drawn through each of these bit structures and its interconnection structure can cause substantial heating of that bit structure to raise temperatures thereof to have at least one of the magnetic material films therein at least approach its corresponding associated critical temperature while being substantially above temperatures of at least an adjacent said bit structure because of sufficient thermal isolation.
    • 一种基于铁磁性薄膜的数字存储器,其具有支撑位结构的衬底,其与信息存储和检索电路电互连并且具有磁性材料膜,其中特性磁性能基本上保持在相关临界温度以下,高于该磁性性质不是 保持由至少一层非磁性材料隔开,每个位结构具有互连结构,在其基本上平行于位于第一接触表面和衬底之间的中间层的接触表面处提供电接触。 位于相对应的所述位结构的中间层的相对侧上的相应一个位结构的多个字线结构与其互连结构提供电接触。 通过这些位结构及其互连结构中的每一个选择性地拉出的足够的电流可以引起该位结构的显着加热以升高其温度,使其中的至少一个磁性材料膜至少接近其对应的相关临界温度,同时基本上高于 至少相邻的位结构的温度由于足够的热隔离。
    • 4. 发明申请
    • Enclosure tamper detection and protection
    • 外壳防拆检测和保护
    • US20080042834A1
    • 2008-02-21
    • US11788616
    • 2007-04-20
    • James DaughtonJames Deak
    • James DaughtonJames Deak
    • G08B13/24
    • G01R33/093B82Y25/00G11C11/1695
    • A tamper detecting enclosure arrangement for enclosures containing an interior space in which a protected item is positioned having a magnetoresistive sensing memory storage cell positioned in or near the protected item in the enclosure having a two state offset magnetoresistance versus externally applied magnetic field. A magnet is positioned at a selected separation distance from the magnetoresistive sensing memory storage cell to thereby provide a magnetic field about the magnetoresistive sensing memory storage cell if said enclosure has not been opened in such a manner as to result in substantially increasing said separation distance.
    • 一种用于包含内部空间的篡改检测外壳装置,其中被保护物品被定位在其中,其具有位于所述外壳中的受保护物品内或附近的磁阻感测存储器单元,其具有与外部施加的磁场相对的两个状态偏移磁阻。 磁体位于与磁阻感测存储单元相隔一定距离的距离处,从而如果所述外壳未被打开,从而提供磁阻感测存储单元周围的磁场,导致大大增加所述间隔距离。
    • 6. 发明申请
    • Magnetic memory layers thermal pulse transitions
    • 磁存储层热脉冲过渡
    • US20060083056A1
    • 2006-04-20
    • US11292635
    • 2005-12-02
    • James DaughtonArthur Pohm
    • James DaughtonArthur Pohm
    • G11C11/00
    • G11C11/16G11C11/15G11C11/1675H01L27/222H01L27/226H01L43/08
    • A ferromagnetic thin-film based digital memory having a bit structures therein a magnetic material film in which a magnetic property thereof is maintained below a critical temperature above which such magnetic property is not maintained, and may also have a plurality of word line structures each with heating sections located across from the magnetic material film in a corresponding one of the bit structures. These bit structures are sufficiently thermally isolated to allow selected currents in the adjacent word lines or in the bit structure, or both, to selectively heat the bit structure to approach the critical temperature. Such bit structures may have three magnetic material layers each with its own critical temperature for maintaining versus not maintaining a magnetic property thereof.
    • 一种基于铁磁性薄膜的数字存储器,其中具有磁性材料膜的位结构,其中磁性材料膜的磁性能保持在低于不能保持这种磁性的临界温度以下,并且还可以具有多个字线结构,每个具有 在相应的一个位结构中位于磁性材料膜两侧的加热部分。 这些位结构被充分热隔离,以允许相邻字线或位结构中的选定电流或两者都选择性地加热位结构以接近临界温度。 这种钻头结构可以具有三个磁性材料层,每个磁性材料层具有其自身的临界温度以维持而不保持其磁性。
    • 7. 发明申请
    • Magnetoresistive memory SOI cell
    • 磁电阻存储器SOI单元
    • US20050242382A1
    • 2005-11-03
    • US11116874
    • 2005-04-28
    • James DaughtonJames DeakArthur Pohm
    • James DaughtonJames DeakArthur Pohm
    • H01L21/8246H01L27/22H01L29/94
    • H01L27/228B82Y10/00G11C11/16H01L27/224H01L43/10
    • A ferromagnetic thin-film based digital memory having a substrate formed of a base supporting an electrically insulating material primary substrate layer in turn supporting a plurality of current control devices each having an interconnection arrangement with each of said plurality of current control devices being separated from one another by spacer material therebetween and being electrically interconnected with information storage and retrieval circuitry. A plurality of bit structures are each supported on and electrically connected to a said interconnection arrangement of a corresponding one of said plurality of current control devices and have magnetic material films in which a characteristic magnetic property is substantially maintained below an associated critical temperature above which such magnetic property is not maintained of which two are separated by at least one intermediate layer of a nonmagnetic material having two major surfaces on opposite sides thereof. A plurality of word line structures located across from a corresponding one of the bit structures on an opposite side of the intermediate layer of a corresponding one of said bit structures from its interconnection arrangement supporting that bit structure. Sufficient electrical current selectively drawn through each of these bit structures as interconnected can cause substantial heating of that bit structure to raise temperatures thereof to have at least one of the magnetic material films therein at least approach its corresponding associated critical temperature while being substantially above temperatures of at least an adjacent said bit structure because of sufficient thermal isolation.
    • 一种基于铁磁薄膜的数字存储器,其具有由支撑电绝缘材料主基底层的基底形成的基底,其又支撑多个电流控制装置,每个电流控制装置具有与所述多个电流控制装置中的每一个的互连装置, 另一个通过其间的间隔物材料并且与信息存储和检索电路电互连。 多个位结构分别被支撑在所述多个电流控制装置中的对应的一个电流控制装置的所述互连装置上并与其电连接,并且具有磁性材料膜,其中特性磁性能基本上保持在相关的临界温度以下, 磁性不保持,其中两个被至少一个在其相对侧上具有两个主表面的非磁性材料的中间层隔开。 多个字线结构,位于相对应的所述位结构的中间层的相对侧上的对应的一个位线结构,以及支撑该位结构的互连布置。 通过互连的这些位结构中的每一个选择性地抽出足够的电流可引起该位结构的实质加热以升高其温度,使其中的至少一个磁性材料膜至少接近其对应的相关临界温度,同时基本上高于 至少相邻的所述位结构由于足够的热隔离。
    • 10. 发明申请
    • Inverted magnetic isolator
    • 倒置磁隔离器
    • US20060061350A1
    • 2006-03-23
    • US11229282
    • 2005-09-16
    • John MyersJames Daughton
    • John MyersJames Daughton
    • G01R15/18
    • G01R15/205G01R15/202G01R15/207H01L2924/0002H01L2924/00
    • A current determiner comprising a first input conductor and a first current sensor, formed of a plurality of magnetoresistive, anisotropic, ferromagnetic thin-film layers at least two of which are separated from one another by a nonmagnetic layer positioned therebetween, and both supported on a substrate adjacent to and spaced apart from one another so they are electrically isolated with the first current sensor positioned in those magnetic fields arising from any input currents. A first shield/concentrator of a material exhibiting a substantial magnetic permeability is positioned between the substrate and the first input conductor. The substrate can include a monolithic integrated circuit structure containing electronic circuit components of which at least one is electrically connected to the first input conductor. A similar second current sensor can be individually formed, but can also be in the current determiner structure that is supported on the substrate along with a second input conductor supported on the substrate suited for conducting input currents therethrough. This second input conductor is positioned at that side of the second current sensor opposite to that side thereof facing the substrate so as to be adjacent to, yet spaced apart from, the second current sensor to thereby be electrically isolated from any direct circuit interconnection therewith on the substrate but to have the second current sensor positioned in those magnetic fields arising from the input currents in the second input conductor. In addition, a second shield/concentrator layer of material exhibiting a substantial magnetic permeability to serve as a magnetic field concentrator is positioned at that side of the second input conductor opposite to that side thereof facing the substrate. In the first instance, the second shield/concentrator layer is electrically connected to the second input conductor, and can be so connected in the second instance.
    • 一种电流确定器,包括由多个磁阻各向异性铁磁薄膜层形成的第一输入导体和第一电流传感器,其中至少两个通过位于它们之间的非磁性层彼此分离,并且两者均支撑在 基板相邻并彼此间隔开,使得它们与位于由任何输入电流产生的那些磁场中的第一电流传感器电隔离。 表现出实质磁导率的材料的第一屏蔽/集中器位于基板和第一输入导体之间。 基板可以包括单片集成电路结构,其包含至少一个电连接到第一输入导体的电子电路部件。 类似的第二电流传感器可以单独地形成,但是也可以是电流确定器结构,其被支撑在衬底上,以及支撑在衬底上的第二输入导体,其适于传导通过其中的输入电流。 该第二输入导体位于第二电流传感器的与面向基板的那侧相反的一侧,以便与第二电流传感器相邻但间隔开,从而与其间的任何直接电路互连电隔离, 而是将第二电流传感器定位在由第二输入导体中的输入电流产生的那些磁场中。 此外,表现出实质磁导率用作磁场聚光器的材料的第二屏蔽/集中器层位于与面向基板的该侧相对的第二输入导体的那一侧。 在第一种情况下,第二屏蔽/集中器层电连接到第二输入导体,并且可以在第二种情况下被连接。