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1. 发明申请

US20080042834A1 Enclosure tamper detection and protection 有权
标题翻译：外壳防拆检测和保护
公开(公告)号：US20080042834A1
公开(公告)日：2008-02-21
申请号：US11788616
申请日：2007-04-20
申请人： James Daughton , James Deak
发明人： James Daughton , James Deak
IPC分类号： G08B13/24
CPC分类号： G01R33/093 , B82Y25/00 , G11C11/1695
摘要： A tamper detecting enclosure arrangement for enclosures containing an interior space in which a protected item is positioned having a magnetoresistive sensing memory storage cell positioned in or near the protected item in the enclosure having a two state offset magnetoresistance versus externally applied magnetic field. A magnet is positioned at a selected separation distance from the magnetoresistive sensing memory storage cell to thereby provide a magnetic field about the magnetoresistive sensing memory storage cell if said enclosure has not been opened in such a manner as to result in substantially increasing said separation distance.
摘要翻译：一种用于包含内部空间的篡改检测外壳装置，其中被保护物品被定位在其中，其具有位于所述外壳中的受保护物品内或附近的磁阻感测存储器单元，其具有与外部施加的磁场相对的两个状态偏移磁阻。磁体位于与磁阻感测存储单元相隔一定距离的距离处，从而如果所述外壳未被打开，从而提供磁阻感测存储单元周围的磁场，导致大大增加所述间隔距离。

2. 发明申请

US20060077707A1 Thermomagnetically assisted spin-momentum-transfer switching memory 有权
标题翻译：热磁辅助自旋动量转换开关存储器
公开(公告)号：US20060077707A1
公开(公告)日：2006-04-13
申请号：US11249046
申请日：2005-10-12
申请人： James Deak
发明人： James Deak
IPC分类号： G11C11/14
CPC分类号： H01L27/228 , G11C11/16
摘要： A ferromagnetic thin-film based digital memory having a substrate supporting bit structures that are electrically interconnected with information storage and retrieval circuitry and having first and second oppositely oriented relatively fixed magnetization layers and a ferromagnetic material film in which a characteristic magnetic property is substantially maintained below an associated critical temperature above which such magnetic property is not maintained. This ferromagnetic material film is separated from the first and second fixed magnetization films by corresponding layers of a nonmagnetic materials one being electrically insulative and that one remaining being electrically conductive. Each bit structure has an interconnection structure providing electrical contact thereto at a contact surface thereof substantially parallel to the intermediate layer positioned between the first contact surface and the substrate. A plurality of word line structures located across from a corresponding one of the bit structures on an opposite side. Electrical current selectively drawn through each of these bit structures and its interconnection structure can cause substantial heating of that bit structure to raise temperatures thereof while being above temperatures of at least an adjacent said bit structure because of sufficient thermal isolation.
摘要翻译：一种基于铁磁薄膜的数字存储器，其具有支撑位结构的衬底，所述衬底支撑位结构，其与信息存储和检索电路电互连并且具有第一和第二相对定向的相对固定的磁化层和铁磁材料膜，其中特性磁性能基本上保持在低于相关的临界温度，高于该临界温度，这种磁性不能保持。该铁磁材料膜通过非磁性材料的相应层与第一和第二固定磁化膜分离，一个是电绝缘的，另一个是导电的。每个位结构具有在其基本平行于位于第一接触表面和衬底之间的中间层的接触表面处提供与其接触的互连结构。多个字线结构，位于相对侧上的相应一个位结构的两侧。通过这些位结构中的每一个及其互连结构选择性地拉伸的电流可以导致该位结构的实质加热，以便由于足够的热隔离而在至少相邻的所述位结构的温度之上升高其温度。

3. 发明申请

US20060003471A1 Self-aligned, low-resistance, efficient memory array 有权
标题翻译：自对准，低电阻，高效率的存储器阵列
公开(公告)号：US20060003471A1
公开(公告)日：2006-01-05
申请号：US11212646
申请日：2005-08-29
申请人： James Deak
发明人： James Deak
IPC分类号： H01L21/00
CPC分类号： G11C11/16 , H01L27/222 , H01L43/08 , H01L43/12 , Y10T29/49021 , Y10T29/49044
摘要： The present invention seeks to reduce the amount of current required for a write operation by using a process for forming the read conductor within a recessed write conductor, the write conductor itself formed within a trench of an insulating layer. The present invention protects the MTJ from the voltages created by the write conductor by isolating the write conductor and enabling the reduction of current necessary to write a bit of information.
摘要翻译：本发明寻求通过使用在凹形写入导体内形成读取导体的工艺来减少写入操作所需的电流量，写入导体本身形成在绝缘层的沟槽内。本发明通过隔离写入导体并且使得能够减少写入一位信息所需的电流来保护MTJ免受由写入导体产生的电压的影响。

4. 发明申请

US20050079638A1 System and method for reducing shorting in memory cells 有权
标题翻译：用于减少存储器单元短路的系统和方法
公开(公告)号：US20050079638A1
公开(公告)日：2005-04-14
申请号：US10684967
申请日：2003-10-14
申请人： Joel Drewes , James Deak
发明人： Joel Drewes , James Deak
IPC分类号： H01L21/00 , H01L27/22
CPC分类号： H01L27/222 , H01L43/08 , H01L43/12
摘要： An MRAM device includes an array of magnetic memory cells having an upper conductive layer and a lower conductive layer separated by a barrier layer. To reduce the likelihood of electrical shorting across the barrier layers of the memory cells, spacers can be formed around the upper conductive layer and, after the layers of the magnetic memory cells have been etched, the memory cells can be oxidized to transform any conductive particles that are deposited along the sidewalls of the memory cells as byproducts of the etching process into nonconductive particles. Alternatively, the lower conductive layer can be repeatedly subjected to partial oxidation and partial etching steps such that only nonconductive particles can be thrown up along the sidewalls of the memory cells as byproducts of the etching process.
摘要翻译： MRAM器件包括具有由阻挡层隔开的上导电层和下导电层的磁存储单元的阵列。为了减少跨越存储器单元的阻挡层的电短路的可能性，可以在上导电层周围形成间隔物，并且在已经蚀刻了磁存储单元的层之后，可以将存储单元氧化以转换任何导电颗粒沿着存储器单元的侧壁沉积作为蚀刻工艺的副产物而形成非导电颗粒。或者，下导电层可以重复进行部分氧化和部分蚀刻步骤，使得只有非导电颗粒可以作为蚀刻工艺的副产物沿着存储器单元的侧壁被抛出。

5. 发明申请

US20060234397A1 Magnetic annealing sequences for patterned MRAM synthetic antiferromagnetic pinned layers 有权
公开(公告)号：US20060234397A1
公开(公告)日：2006-10-19
申请号：US11451925
申请日：2006-06-12
申请人： James Deak
发明人： James Deak
IPC分类号： H01L21/00
CPC分类号： B82Y25/00 , B82Y40/00 , G11C11/16 , H01F10/3272 , H01F41/304 , H01L43/12
摘要： A method is provided for fabricating a fixed layer for a MRAM device. The method includes providing the fixed layer. The fixed layer includes an antiferromagnetic pinning layer over a substrate and a ferromagnetic pinned layer over the pinning layer, the pinned layer having a first thickness. The fixed layer further includes a spacer layer over the pinned layer, and a ferromagnetic reference layer over the spacer layer, the reference layer having a second thickness. The method further includes annealing the fixed layer using a temporal temperature/magnetic field profile, the profile having a maximum magnetic field magnitude (Hanneal). The profile is selected based on the first thickness of the pinned layer and the second thickness of the reference layer.

6. 发明申请

US20050164414A1 Magnetic annealing sequences for patterned MRAM synthetic antiferromagnetic pinned layers 有权
标题翻译：用于图案化MRAM合成反铁磁固定层的磁退火序列
公开(公告)号：US20050164414A1
公开(公告)日：2005-07-28
申请号：US10764832
申请日：2004-01-26
申请人： James Deak
发明人： James Deak
IPC分类号： G11C11/16 , H01F10/32 , H01F41/30 , H01L21/00 , H01L43/12
CPC分类号： B82Y25/00 , B82Y40/00 , G11C11/16 , H01F10/3272 , H01F41/304 , H01L43/12
摘要： A method is provided for fabricating a fixed layer for a MRAM device. The method includes providing the fixed layer. The fixed layer includes an antiferromagnetic pinning layer over a substrate and a ferromagnetic pinned layer over the pinning layer, the pinned layer having a first thickness. The fixed layer further includes a spacer layer over the pinned layer, and a ferromagnetic reference layer over the spacer layer, the reference layer having a second thickness. The method further includes annealing the fixed layer using a temporal temperature/magnetic field profile, the profile having a maximum magnetic field magnitude (Hanneal). The profile is selected based on the first thickness of the pinned layer and the second thickness of the reference layer.
摘要翻译：提供了一种制造用于MRAM器件的固定层的方法。该方法包括提供固定层。固定层包括衬底上的反铁磁钉扎层和钉扎层上的铁磁性钉扎层，钉扎层具有第一厚度。固定层还包括被钉扎层上的间隔层，以及间隔层上方的铁磁参考层，参考层具有第二厚度。该方法还包括使用时间温度/磁场分布对固定层进行退火，该轮廓具有最大磁场强度（H H 3退火）。基于被钉扎层的第一厚度和参考层的第二厚度来选择轮廓。

7. 发明申请

US20140021571A1 Single-chip bridge-type magnetic field sensor and preparation method thereof 有权
标题翻译：单片桥式磁场传感器及其制备方法
公开(公告)号：US20140021571A1
公开(公告)日：2014-01-23
申请号：US14009834
申请日：2012-04-01
申请人： Xiaofeng Lei , Insik Jin , James Deak , Weifeng Geza Shen , Mingfeng Liu , Songsheng Xue
发明人： Xiaofeng Lei , Insik Jin , James Deak , Weifeng Geza Shen , Mingfeng Liu , Songsheng Xue
IPC分类号： H01L43/02
CPC分类号： H01L43/12 , B82Y10/00 , G01B7/30 , G01R33/0052 , G01R33/093 , G01R33/098 , G11B5/3909 , G11B5/3993 , G11B2005/3996 , H01L43/02 , H01L43/08
摘要： The present invention discloses a design and manufacturing method for a single-chip magnetic sensor bridge. The sensor bridge comprises four magnetoresistive elements. The magnetization of the pinned layer of each of the four magnetoresistive elements is set in the same direction, but the magnetization directions of the free layers of the magnetoresistive elements on adjacent arms of the bridge are set at different angles with respect to the pinned layer magnetization direction. The absolute values of the angles of the magnetization directions of the free layers of all four magnetoresistive elements are the same with respect with their pinning layers. The disclosed magnetic biasing scheme enables the integration of a push-pull Wheatstone bridge magnetic field sensor on a single chip with better performance, lower cost, and easier manufacturability than conventional magnetoresistive sensor designs.
摘要翻译：本发明公开了一种单芯片磁传感器桥的设计和制造方法。传感器桥包括四个磁阻元件。四个磁阻元件中的每一个的钉扎层的磁化被设定在相同的方向上，但是桥的相邻臂上的磁阻元件的自由层的磁化方向相对于被钉扎层磁化被设定在不同的角度方向。所有四个磁阻元件的自由层的磁化方向的角度的绝对值与它们的钉扎层相同。所公开的磁偏置方案使得能够将单个芯片上的推挽惠斯通电桥磁场传感器与传统的磁阻传感器设计相比具有更好的性能，更低的成本和更易于制造的能力。

8. 发明申请

US20060076635A1 Magnetoresistive memory device assemblies, and methods of forming magnetoresistive memory device assemblies 有权
标题翻译：磁阻存储器件组件，以及形成磁阻存储器件组件的方法
公开(公告)号：US20060076635A1
公开(公告)日：2006-04-13
申请号：US11295177
申请日：2005-12-05
申请人： Hasan Nejad , James Deak
发明人： Hasan Nejad , James Deak
IPC分类号： H01L43/00
CPC分类号： H01L27/222
摘要： The invention includes a construction comprising an MRAM device between a pair of conductive lines. Each of the conductive lines can generate a magnetic field encompassing at least a portion of the MRAM device. Each of the conductive lines is surrounded on three sides by magnetic material to concentrate the magnetic fields generated by the conductive lines at the MRAM device. The invention also includes a method of forming an assembly containing MRAM devices. A plurality of MRAM devices are formed over a substrate. An electrically conductive material is formed over the MRAM devices, and patterned into a plurality of lines. The lines are in a one-to-one correspondence with the MRAM devices and are spaced from one another. After the conductive material is patterned into lines, a magnetic material is formed to extend over the lines and within spaces between the lines.
摘要翻译：本发明包括在一对导线之间包括MRAM器件的结构。每个导线可以产生包围MRAM装置的至少一部分的磁场。每个导线在三面被磁性材料包围以将由导线产生的磁场集中在MRAM器件上。本发明还包括形成包含MRAM器件的组件的方法。在衬底上形成多个MRAM器件。导电材料形成在MRAM器件上，并被图案化成多条线。这些线与MRAM器件一一对应，并且彼此间隔开。在将导电材料图案化成线之后，形成磁性材料以在线之间和线之间的空间内延伸。

9. 发明申请

US20050078512A1 Write current shunting compensation 有权
标题翻译：写当前分流补偿
公开(公告)号：US20050078512A1
公开(公告)日：2005-04-14
申请号：US10926237
申请日：2004-08-26
申请人： James Deak
发明人： James Deak
IPC分类号： G11C11/16 , G11C11/15
CPC分类号： G11C11/16
摘要： A magnetic random access memory (MRAM) is compensated for write current shunting by varying the bit size of each MRAM cell with position along the write line. The MRAM includes a plurality of magnetic tunnel junction memory cells arranged in an array of columns and rows. The width of each memory cell increases along a write line to compensate for write current shunting.
摘要翻译：磁性随机存取存储器（MRAM）通过沿着写入线的位置改变每个MRAM单元的位大小来补偿写入电流分流。 MRAM包括以列和行阵列排列的多个磁性隧道结存储单元。每个存储单元的宽度沿写入线增加以补偿写入电流分流。

10. 发明申请

US20050040453A1 Magnetoresistive memory device assemblies 有权
标题翻译：磁阻存储器件组件
公开(公告)号：US20050040453A1
公开(公告)日：2005-02-24
申请号：US10920740
申请日：2004-08-17
申请人： Hasan Nejad , James Deak
发明人： Hasan Nejad , James Deak
IPC分类号： H01L21/00 , H01L21/8238 , H01L27/108 , H01L27/22 , H01L29/76 , H01L43/12
CPC分类号： H01L27/222
摘要： The invention includes a construction comprising an MRAM device between a pair of conductive lines. Each of the conductive lines can generate a magnetic field encompassing at least a portion of the MRAM device. Each of the conductive lines is surrounded on three sides by magnetic material to concentrate the magnetic fields generated by the conductive lines at the MRAM device. The invention also includes a method of forming an assembly containing MRAM devices. A plurality of MRAM devices are formed over a substrate. An electrically conductive material is formed over the MRAM devices, and patterned into a plurality of lines. The lines are in a one-to-one correspondence with the MRAM devices and are spaced from one another. After the conductive material is patterned into lines, a magnetic material is formed to extend over the lines and within spaces between the lines.
摘要翻译：本发明包括在一对导线之间包括MRAM器件的结构。每个导线可以产生包围MRAM装置的至少一部分的磁场。每个导线在三面被磁性材料包围以将由导线产生的磁场集中在MRAM器件上。本发明还包括形成包含MRAM器件的组件的方法。在衬底上形成多个MRAM器件。导电材料形成在MRAM器件上，并被图案化成多条线。这些线与MRAM器件一一对应，并且彼此间隔开。在将导电材料图案化成线之后，形成磁性材料以在线之间和线之间的空间内延伸。

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