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    • 4. 发明申请
    • Memory system anti-aliasing scheme
    • 内存系统抗锯齿方案
    • US20070089032A1
    • 2007-04-19
    • US11240823
    • 2005-09-30
    • James AlexanderJoaquin RomeraRajat AgarwalThomas Holman
    • James AlexanderJoaquin RomeraRajat AgarwalThomas Holman
    • G11C29/00
    • G06F11/1024
    • Embodiments of the invention are generally directed to systems, methods, and apparatuses for a memory device anti-aliasing scheme. In an embodiment, a memory controller includes an error check agent to receive a codeword from a rank of memory and to provide an error indication in response to detecting a correctable adjacent-symbol-pair-error the rank of memory. An error counter may be coupled with the error check agent to increment towards a threshold value in response to the error indication from the error check agent. In an embodiment, a faulty memory device marker agent coupled with the error counter provides a faulty memory device marker to the error check agent, if the error counter exceeds the threshold value. Other embodiments are described and claimed.
    • 本发明的实施例一般涉及用于存储器件抗锯齿方案的系统,方法和装置。 在一个实施例中,存储器控制器包括错误检查代理,用于从存储器的等级接收码字,并且响应于检测存储器的等级的可校正的相邻符号对错误来提供错误指示。 响应于来自错误检查代理的错误指示,错误计数器可以与错误检查代理相结合以递增到阈值。 在一个实施例中,如果错误计数器超过阈值,则与错误计数器耦合的故障存储器设备标记代理向错误检查代理提供错误的存储器设备标记。 描述和要求保护其他实施例。
    • 9. 发明申请
    • MEMORY CONTROLLER USING TIME-STAGGERED LOCKSTEP SUB-CHANNELS WITH BUFFERED MEMORY
    • 使用具有缓冲存储器的时间延迟锁定子通道的存储器控​​制器
    • US20090327596A1
    • 2009-12-31
    • US12163672
    • 2008-06-27
    • Bruce A. ChristensonRajat Agarwal
    • Bruce A. ChristensonRajat Agarwal
    • G06F12/00G06F9/46
    • G06F13/1684
    • Memory control techniques for dual channel lockstep configurations are disclosed. In accordance with one example embodiment, a memory controller issues two burst-length 4 DRAM commands to two double-data-rate (DDR) DRAM sub-channels behind a memory buffer (e.g., FB-DIMM or buffer-on-board). The two commands are in time-staggered lockstep. The time-stagger allows data coming back from the two back-side DDR sub-channels to flow naturally on the host channel without conflict. Multiple DIMMs can be used to obtain chip-fail ECC capabilities and to reclaim at least some of the lost performance imposed by the burst-length of 4 s typically associated with dual channel lockstep memory controllers. The techniques can be implemented, for instance, with a buffered memory solution such as fully buffered DIMM (FB-DIMM) or buffer-on-board configurations.
    • 公开了用于双通道锁步配置的存储器控​​制技术。 根据一个示例实施例,存储器控制器向存储器缓冲器(例如,FB-DIMM或板上缓冲器)后面的两个双数据速率(DDR)DRAM子通道发出两个突发长度的4个DRAM命令。 这两个命令处于时间交错的锁定状态。 时间错误允许从两个背面的DDR子通道返回的数据在主机通道上自然流动而没有冲突。 可以使用多个DIMM来获得芯片故障ECC功能,并回收通常与双通道锁步存储器控制器相关联的4秒的突发长度所施加的至少一些丢失的性能。 这些技术可以实现,例如使用缓冲存储器解决方案,例如完全缓冲的DIMM(FB-DIMM)或板载缓冲器配置。