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    • 6. 发明申请
    • MEMORY CONTROLLER USING TIME-STAGGERED LOCKSTEP SUB-CHANNELS WITH BUFFERED MEMORY
    • 使用具有缓冲存储器的时间延迟锁定子通道的存储器控​​制器
    • US20090327596A1
    • 2009-12-31
    • US12163672
    • 2008-06-27
    • Bruce A. ChristensonRajat Agarwal
    • Bruce A. ChristensonRajat Agarwal
    • G06F12/00G06F9/46
    • G06F13/1684
    • Memory control techniques for dual channel lockstep configurations are disclosed. In accordance with one example embodiment, a memory controller issues two burst-length 4 DRAM commands to two double-data-rate (DDR) DRAM sub-channels behind a memory buffer (e.g., FB-DIMM or buffer-on-board). The two commands are in time-staggered lockstep. The time-stagger allows data coming back from the two back-side DDR sub-channels to flow naturally on the host channel without conflict. Multiple DIMMs can be used to obtain chip-fail ECC capabilities and to reclaim at least some of the lost performance imposed by the burst-length of 4 s typically associated with dual channel lockstep memory controllers. The techniques can be implemented, for instance, with a buffered memory solution such as fully buffered DIMM (FB-DIMM) or buffer-on-board configurations.
    • 公开了用于双通道锁步配置的存储器控​​制技术。 根据一个示例实施例,存储器控制器向存储器缓冲器(例如,FB-DIMM或板上缓冲器)后面的两个双数据速率(DDR)DRAM子通道发出两个突发长度的4个DRAM命令。 这两个命令处于时间交错的锁定状态。 时间错误允许从两个背面的DDR子通道返回的数据在主机通道上自然流动而没有冲突。 可以使用多个DIMM来获得芯片故障ECC功能,并回收通常与双通道锁步存储器控制器相关联的4秒的突发长度所施加的至少一些丢失的性能。 这些技术可以实现,例如使用缓冲存储器解决方案,例如完全缓冲的DIMM(FB-DIMM)或板载缓冲器配置。
    • 10. 发明授权
    • Method for coating metals by dip autopolymerization
    • 通过浸渍自聚合法涂覆金属的方法
    • US5807612A
    • 1998-09-15
    • US692515
    • 1996-08-06
    • James P. BellXu ZhangRajat Agarwal
    • James P. BellXu ZhangRajat Agarwal
    • B05D1/18B05D7/14B05D7/24C08F2/44C09D4/00C09D157/00H05K3/00H05K3/34B05D3/02
    • B05D7/142C09D4/00H05K3/0079H05K3/3452Y10T428/31692Y10T428/31699
    • A composition and method is described for providing conformal protective or decorative polymer coatings on metals such as aluminum, copper, iron, steel, zinc, and their by dip autopolymerization. In accordance with the present invention, an acidic solution of organic monomer undergoes autopolymerization upon contact with a metal substrate, thereby forming a polymeric coating on the substrate. The method comprises providing the acidic monomer solution, dipping the metal substrate to be coated for a prescribed period of time depending on the thickness of the coating desired, and then removing the substrate from the solution. Importantly, the polymerization requires no application of external driving force, such as thermal or electrical energy. The coatings thus formed are up to 50 microns thick, and conform to the shape of the substrate. These coatings further have uniform thickness, and excellent thermal stability and protective properties. In one preferred embodiment of the present invention, the composition comprises an acidic solution of an organic electron acceptor monomer that undergoes autopolymerization in contact with a metal substrate, thereby forming a polymeric coating on the substrate. In another preferred embodiment of the present invention, the composition comprises an acidic solution of an organic electron acceptor monomer and an organic electron donor monomer that undergo autopolymerization in contact with a metal substrate, thereby forming a polymeric coating on the substrate. Metal-polymer composites are also described.
    • 描述了一种组合物和方法,用于在诸如铝,铜,铁,钢,锌的金属上提供保形或装饰聚合物涂层,并通过浸渍自聚合来进行。 根据本发明,有机单体的酸性溶液在与金属基材接触时经历自聚合,从而在基材上形成聚合物涂层。 该方法包括提供酸性单体溶液,根据所需涂层的厚度将待涂覆的金属基材浸渍规定的时间,然后从溶液中除去基材。 重要的是,聚合不需要外部驱动力,例如热或电能。 如此形成的涂层最多达50微米厚,并且符合基材的形状。 这些涂层还具有均匀的厚度,以及优异的热稳定性和保护性能。 在本发明的一个优选实施方案中,组合物包含与金属基材接触的自聚合的有机电子受体单体的酸性溶液,从而在基材上形成聚合物涂层。 在本发明的另一个优选实施方案中,组合物包含有机电子受体单体和有机电子供体单体的酸性溶液,其经历与金属基材接触的自聚合,从而在基材上形成聚合物涂层。 还描述了金属 - 聚合物复合材料。