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    • 3. 发明申请
    • A DAMASCENE COPPER WIRING IMAGE SENSOR
    • DAMASCENE铜接线图像传感器
    • US20060113622A1
    • 2006-06-01
    • US10904807
    • 2004-11-30
    • James AdkissonJeffrey GambinoMark JaffeRobert LeidyAnthony Stamper
    • James AdkissonJeffrey GambinoMark JaffeRobert LeidyAnthony Stamper
    • H01L31/00
    • H01L27/14685H01L21/76819H01L21/76834H01L21/76838H01L27/14621H01L27/14627H01L27/14636H01L27/14687
    • An image sensor array and method of fabrication wherein the sensor includes Copper (Cu) metallization levels allowing for incorporation of a thinner interlevel dielectric stack with improved thickness uniformity to result in a pixel array exhibiting increased light sensitivity. In the sensor array, each Cu metallization level includes a Cu metal wire structure formed at locations between each array pixel and, a barrier material layer is formed on top each Cu metal wire structure that traverses the pixel optical path. By implementing a single mask or self-aligned mask methodology, a single etch is conducted to completely remove the interlevel dielectric and barrier layers that traverse the optical path. The etched opening is then refilled with dielectric material. Prior to depositing the refill dielectric, a layer of either reflective or absorptive material is formed along the sidewalls of the etched opening to improve sensitivity of the pixels by either reflecting light to the underlying photodiode or by eliminating light reflections.
    • 一种图像传感器阵列和制造方法,其中传感器包括铜(Cu)金属化水平,允许结合更薄的层间电介质叠层,改进的厚度均匀性,以产生呈现增加的光敏度的像素阵列。 在传感器阵列中,每个Cu金属化层包括在每个阵列像素之间的位置处形成的Cu金属线结构,并且阻挡材料层形成在穿过像素光路的每个Cu金属线结构上。 通过实现单掩模或自对准掩模方法,进行单次蚀刻以完全去除穿过光路的层间电介质层和阻挡层。 然后将蚀刻的开口用电介质材料重新填充。 在沉积再充填电介质之前,沿蚀刻开口的侧壁形成反射或吸收材料层,以通过将光反射到下面的光电二极管或通过消除光反射来提高像素的灵敏度。