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    • 1. 发明申请
    • DIAGNOSING IN-LINE CRITICAL DIMENSION CONTROL ADJUSTMENTS USING OPTICAL PROXIMITY CORRECTION VERIFICATION
    • 使用光学临近校正验证来诊断在线关键尺寸控制调整
    • US20120191234A1
    • 2012-07-26
    • US13014152
    • 2011-01-26
    • James A. BruceKenneth T. Settlemyer, JR.
    • James A. BruceKenneth T. Settlemyer, JR.
    • G06F19/00
    • G03F1/36G03F1/70G03F7/705
    • Solutions for diagnosing in-line critical dimension control adjustments in a lithographic process are disclosed. In one embodiment, a method includes: locating a control structure in a data set representing one of a chip or a kerf; simulating component dimensions within a region proximate to the control structure; determining a difference between the simulated component dimensions within the region and target component dimensions within the region; determining whether the difference exceeds a predetermined tolerance threshold; adjusting a simulation condition in response to determining the difference exceeds the predetermined tolerance threshold; and repeating the simulating of the component dimensions within the region, the determining of the difference, and the determining of whether the difference exceeds the predetermined tolerance threshold in response to the adjusting of the simulation condition.
    • 公开了用于诊断光刻工艺中的在线临界尺寸控制调整的解决方案。 在一个实施例中,一种方法包括:将控制结构定位在表示芯片或切口之一的数据集中; 在靠近控制结构的区域内模拟部件尺寸; 确定区域内的模拟部件尺寸与该区域内的目标部件尺寸之间的差异; 确定所述差异是否超过预定的容差阈值; 响应于确定所述差异来调整模拟条件超过所述预定公差阈值; 并且响应于所述模拟条件的调整,重复所述区域内的所述分量尺寸的模拟,所述差的确定以及所述差是否超过所述预定公差阈值。