专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5476806A Semiconductor device and method for making thereof 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US5476806A
公开(公告)日：1995-12-19
申请号：US195234
申请日：1994-02-14
申请人： Jae-sung Roh , Hyeung-Tae Kim
发明人： Jae-sung Roh , Hyeung-Tae Kim
IPC分类号： H01L21/8242 , H01L27/108
CPC分类号： H01L27/10852 , H01L27/10817
摘要： The capacitor area is increased with a cylinder-shaped first storage electrode overlapped with a second electrode in an area which covers two adjacent cells. Included in a semiconductor device using the invention may be: a semiconductor substrate; a word line on the substrate; impurity regions at opposite sides of the word line in the substrate; a first contact hole on an odd impurity region; a first storage electrode connected to the first contact hole, which is overlapped with an adjacent even cell; a first sidewall storage electrode at opposite sides of the fist storage electrode; a second contact hole on the even impurity region, the second contact hole having a insulated sidewall; a second storage electrode connected to the second contact hole, which is overlapped with an adjacent odd cell; a second sidewall storage electrode at opposite sides of the second storage electrode.
摘要翻译：在覆盖两个相邻单元的区域中，与第二电极重叠的圆筒状的第一存储电极增加电容器面积。包括在使用本发明的半导体器件中可以是：半导体衬底; 衬底上的字线; 在衬底中的字线的相对侧的杂质区域; 奇杂杂区上的第一接触孔; 连接到第一接触孔的第一存储电极，其与相邻的偶数单元重叠; 在所述第一存储电极的相对侧的第一侧壁存储电极; 所述偶杂杂质区上的第二接触孔，所述第二接触孔具有绝缘侧壁; 与第二接触孔连接的与相邻的奇数单元重叠的第二存储电极; 在第二存储电极的相对侧的第二侧壁存储电极。

2. 发明授权

US5629540A Semiconductor device having overlapped storage electrodes 失效
标题翻译：具有重叠存储电极的半导体器件
公开(公告)号：US5629540A
公开(公告)日：1997-05-13
申请号：US482534
申请日：1995-06-07
申请人： Jae-sung Roh , Hyeung-Tae Kim
发明人： Jae-sung Roh , Hyeung-Tae Kim
IPC分类号： H01L21/8242 , H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L27/10852 , H01L27/10817
摘要： The capacitor area is increased with a cylinder-shaped first storage electrode overlapped with a second electrode in an area which covers two adjacent cells. Included in a semiconductor device using the invention may be: a semiconductor substrate; a word line on the substrate; impurity regions at opposite sides of the word line in the substrate; a first contact hole on an odd impurity region; a first storage electrode connected to the first contact hole, which is overlapped with an adjacent even cell; a first sidewall storage electrode at opposite sides of the first storage electrode; a second contact hole on the even impurity region, the second contact hole having an insulated sidewall; a second storage electrode connected to the second contact hole, which is overlapped with an adjacent odd cell; a second sidewall storage electrode at opposite sides of the second storage electrode.
摘要翻译：在覆盖两个相邻单元的区域中，与第二电极重叠的圆筒状的第一存储电极增加电容器面积。包括在使用本发明的半导体器件中可以是：半导体衬底; 衬底上的字线; 在衬底中的字线的相对侧的杂质区域; 奇杂杂区上的第一接触孔; 连接到第一接触孔的第一存储电极，其与相邻的偶数单元重叠; 在所述第一存储电极的相对侧的第一侧壁存储电极; 所述偶杂杂质区上的第二接触孔，所述第二接触孔具有绝缘侧壁; 与第二接触孔连接的与相邻的奇数单元重叠的第二存储电极; 在第二存储电极的相对侧的第二侧壁存储电极。

3. 发明授权

US5567244A Process for cleaning semiconductor devices 失效
标题翻译：半导体器件清洗工艺
公开(公告)号：US5567244A
公开(公告)日：1996-10-22
申请号：US172463
申请日：1993-12-23
申请人： Chang-Jae Lee , Hyeung-Tae Kim
发明人： Chang-Jae Lee , Hyeung-Tae Kim
IPC分类号： H01L21/304 , C01G3/04 , H01L21/302 , H01L21/306 , B08B3/08
CPC分类号： H01L21/02052 , C01G3/04 , Y10S134/902
摘要： The present invention provides a process for cleaning semiconductor devices which enables the contamination of copper to maintained under a level of about 10.sup.9 atoms/cm.sup.2 to meet the qualification of DRAMs of equal to or greater than 64M bits in capacity by means of supplying O.sub.3 to a solution, resulting in great reproducibility and reliability. According to the present invention, a mechanism for removing a copper impurity in a semiconductor device uses oxygen to form a cupric oxide, which forms a cupric fluoride, which is then removed from the solution.
摘要翻译：本发明提供一种用于清洁半导体器件的方法，其能够将铜的污染保持在约109原子/ cm 2的水平，以通过向O3提供等于或大于64M位的DRAM的资格来满足解决方案，具有很好的重现性和可靠性。根据本发明，用于去除半导体器件中的铜杂质的机构使用氧来形成氧化铜，其形成氟化铜，然后从溶液中除去。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式