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1. 发明申请

US20100127731A1 Antifuse circuit of inverter type and method of programming the same 审中-公开
标题翻译：逆变器类型的防腐电路及其编程方法
公开(公告)号：US20100127731A1
公开(公告)日：2010-05-27
申请号：US12585276
申请日：2009-09-10
申请人： Jae-Yong Seo , Gu-Gwan Kang , Tae-Hun Kang , Hong-Sik Park , Jung-Hyeon Kim
发明人： Jae-Yong Seo , Gu-Gwan Kang , Tae-Hun Kang , Hong-Sik Park , Jung-Hyeon Kim
IPC分类号： H03K19/173 , H01H37/76
CPC分类号： H03K19/173 , G11C17/18 , H01L23/5252 , H01L2924/0002 , H01L2924/00
摘要： Example embodiments are directed to an antifuse circuit of an inverter type and a method of programming the same. The antifuse circuit has improved corrosion resistance, utilizes lesser chip area and can be programmed at a low voltage. The antifuse circuit includes a PMOS transistor with the gate coupled to a drive power voltage terminal and the source coupled to an anti-pad terminal. During programming the PMOS transistor is off and the source receives an alternating current. Programming the antifuse circuit involves trapping a plurality of electron in an STI region as a result of gate-induced drain leakage. The antifuse circuit also includes an NMOS transistor with the drain connected to the drain of the PMOS transistor, the source connected to ground and the gate connected to a program control signal. The antifuse circuit results in reliable fuse programming at a low voltage by using the PMOS transistor as an anti-fuse device.
摘要翻译：示例性实施例涉及逆变器类型的反熔丝电路及其编程方法。反熔丝电路具有改善的耐腐蚀性，使用较小的芯片面积，并且可以在低电压下编程。反熔丝电路包括PMOS晶体管，其栅极耦合到驱动电源电压端子，并且源极耦合到反焊盘端子。在编程期间，PMOS晶体管截止，源极接收交流电流。对反熔丝电路的编程涉及在栅极引起的漏极泄漏的情况下在STI区域中捕获多个电子。反熔丝电路还包括NMOS晶体管，漏极连接到PMOS晶体管的漏极，源极连接到地，栅极连接到编程控制信号。反熔丝电路通过使用PMOS晶体管作为反熔丝器件，在低电压下实现可靠的熔丝编程。

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