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1. 发明申请

US20080006827A1 Making thin film transistors on display panels 审中-公开
标题翻译：在显示面板上制作薄膜晶体管
公开(公告)号：US20080006827A1
公开(公告)日：2008-01-10
申请号：US11788501
申请日：2007-04-20
申请人： Seung-Hwan Shim , Kwan-Wook Jung , Young-Jin Chang , Jae-Beom Choi , Yoon-Seok Choi
发明人： Seung-Hwan Shim , Kwan-Wook Jung , Young-Jin Chang , Jae-Beom Choi , Yoon-Seok Choi
IPC分类号： H01L31/036 , H01L21/84
CPC分类号： H01L27/1288 , H01L27/1214 , H01L27/3262 , H01L29/66765 , H01L29/78612 , H01L29/78678 , H01L29/78696 , H01L51/56
摘要： A thin film transistor for a display device includes a substrate, a gate electrode formed on the substrate, a gate insulating layer formed on the gate electrode, a polycrystalline semiconductor formed on the gate insulating layer and overlapping the gate electrode, a source electrode partially overlapping the polycrystalline semiconductor, and a drain electrode partially overlapping the polycrystalline semiconductor. The polycrystalline semiconductor includes a plurality of first polycrystalline semiconductors that are doped with conductive impurities and a plurality of second polycrystalline semiconductors that are not doped with conductive impurities, and the first polycrystalline semiconductors are disposed between and connected in series with adjacent ones of the second polycrystalline semiconductors.
摘要翻译：一种用于显示装置的薄膜晶体管，包括基板，形成在基板上的栅电极，形成在栅电极上的栅极绝缘层，形成在栅极绝缘层上并与栅电极重叠的多晶半导体，源电极部分重叠多晶半导体和与多晶半导体部分重叠的漏电极。多晶半导体包括掺杂有导电杂质的多个第一多晶半导体和不掺杂有导电杂质的多个第二多晶半导体，并且第一多晶半导体布置在相邻的第二多晶半导体之间并与其连接半导体。

2. 发明授权

US07824952B2 Display apparatus and method of manufacturing thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US07824952B2
公开(公告)日：2010-11-02
申请号：US11689619
申请日：2007-03-22
申请人： Jae-Beom Choi , Young-Jin Chang , Kwan-Wook Jung , Seung-Hwan Shim
发明人： Jae-Beom Choi , Young-Jin Chang , Kwan-Wook Jung , Seung-Hwan Shim
IPC分类号： H01L51/40
CPC分类号： H01L29/04 , H01L27/1229 , H01L27/1288 , H01L27/3262
摘要： A display apparatus, such as an organic light emitting diode (“OLED”) display, is driven by thin film transistors (“TFTs”), including a driving TFT and a switching TFT, and a pixel electrode. The display apparatus includes an amorphous silicon layer for the switching TFT and a microcrystalline silicon or polycrystalline silicon layer for the driving TFT. The amorphous silicon layer and the microcrystalline silicon layer are separated by an insulating layer. The apparatus provides product reliability and high image quality. A method of manufacturing the apparatus is characterized by reducing processing steps, and using a special mask which is a half tone mask or a slit mask adapted to forming a source electrode and a drain electrode of the switching TFT or the driving TFT and a semiconductor layer during a photolithographic process.
摘要翻译：诸如有机发光二极管（“OLED”）显示器的显示装置由包括驱动TFT和开关TFT的薄膜晶体管（“TFT”）以及像素电极驱动。显示装置包括用于开关TFT的非晶硅层和用于驱动TFT的微晶硅或多晶硅层。非晶硅层和微晶硅层被绝缘层分开。该设备提供产品可靠性和高图像质量。制造该装置的方法的特征在于减少处理步骤，并且使用作为适于形成开关TFT或驱动TFT的源电极和漏电极的半色调掩模或狭缝掩模的特殊掩模和半导体层在光刻过程中。

3. 发明授权

US07880701B2 Display device and manufacturing method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US07880701B2
公开(公告)日：2011-02-01
申请号：US11734630
申请日：2007-04-12
申请人： Young-Jin Chang , Seung-Hwan Shim , Hoon-Kee Min , Kwan-Wook Jung
发明人： Young-Jin Chang , Seung-Hwan Shim , Hoon-Kee Min , Kwan-Wook Jung
IPC分类号： G09G3/36
CPC分类号： H01L27/1251 , G02F1/13624 , G02F2202/103 , G02F2202/104 , H01L27/1214 , H01L27/1229 , H01L27/3244 , H01L29/04
摘要： A display device includes a substrate, first and second signal lines formed on the substrate, a first thin film transistor connected to the first and second signal lines, a gate driver and a data driver connected to the first signal line and the second signal line, respectively, and a second thin film transistor formed in at least one of the gate driver and the data driver The first thin film transistor and the second thin film transistor include a first semiconductor and a second semiconductor, respectively, and the first semiconductor and the second semiconductor are formed at the different layers from each other.
摘要翻译：显示装置包括基板，形成在基板上的第一和第二信号线，连接到第一和第二信号线的第一薄膜晶体管，连接到第一信号线和第二信号线的栅极驱动器和数据驱动器，并且分别形成在栅极驱动器和数据驱动器中的至少一个中的第二薄膜晶体管。第一薄膜晶体管和第二薄膜晶体管分别包括第一半导体和第二半导体，第一半导体和第二半导体半导体形成在彼此不同的层。

4. 发明申请

US20070242176A1 Display Device and Manufacturing Method Thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20070242176A1
公开(公告)日：2007-10-18
申请号：US11734630
申请日：2007-04-12
申请人： Young-Jin Chang , Seung-Hwan Shim , Hoon-Kee Min , Kwan-Wook Jung
发明人： Young-Jin Chang , Seung-Hwan Shim , Hoon-Kee Min , Kwan-Wook Jung
IPC分类号： G02F1/136
CPC分类号： H01L27/1251 , G02F1/13624 , G02F2202/103 , G02F2202/104 , H01L27/1214 , H01L27/1229 , H01L27/3244 , H01L29/04
摘要： A display device and a manufacturing method thereof are provided. The display device includes a substrate, first and second signal lines formed on the substrate, a first thin film transistor connected to the first and second signal lines., a gate driver and a data driver connected to the first signal line and the second signal line, respectively, and a second thin film transistor formed in at least one of the gate driver and the data driver The first thin film transistor and the second thin film transistor include a first semiconductor and a second semiconductor, respectively, and the first semiconductor and the second semiconductor are formed at the different layers from each other.
摘要翻译：提供了显示装置及其制造方法。显示装置包括基板，形成在基板上的第一和第二信号线，连接到第一和第二信号线的第一薄膜晶体管，连接到第一信号线和第二信号线的栅极驱动器和数据驱动器以及形成在栅极驱动器和数据驱动器中的至少一个中的第二薄膜晶体管。第一薄膜晶体管和第二薄膜晶体管分别包括第一半导体和第二半导体，第一半导体和第二半导体第二半导体形成在彼此不同的层。

5. 发明授权

US07573552B2 Transflective liquid crystal display device and method of fabricating the same 失效
标题翻译：反射式液晶显示装置及其制造方法
公开(公告)号：US07573552B2
公开(公告)日：2009-08-11
申请号：US11925487
申请日：2007-10-26
申请人： Yoon-Seok Choi , Young-Jin Chang , Jae-Beom Choi , Seung-Hwan Shim , Han-Na Jo
发明人： Yoon-Seok Choi , Young-Jin Chang , Jae-Beom Choi , Seung-Hwan Shim , Han-Na Jo
IPC分类号： G02F1/1335
CPC分类号： G02F1/133555 , G02F1/13362 , G02F1/13363 , G02F1/133788 , G02F2001/133567 , G02F2001/133638 , G02F2001/136231 , G02F2413/03 , G02F2413/09
摘要： A transflective liquid crystal display device has improved light efficiency. A method of fabricating a transflective liquid crystal display device including a thin film transistor substrate having a transmissive region and a reflective region, includes forming a retardation layer on a lower surface of the thin film transistor substrate, aligning a mask having a reflective region pattern on the lower surface of the thin film transistor substrate, and forming a light efficiency enhancer by selectively removing the retardation layer by irradiating a laser onto the lower surface of the thin film transistor substrate through the mask.
摘要翻译：半透射型液晶显示装置具有提高的光效率。一种制造半透射型液晶显示装置的方法，其包括具有透射区域和反射区域的薄膜晶体管基板，包括在薄膜晶体管基板的下表面上形成延迟层，将具有反射区域图案的掩模对准薄膜晶体管基板的下表面，并且通过通过掩模将激光照射到薄膜晶体管基板的下表面上选择性地去除相位差层来形成光效率增强器。

6. 发明申请

US20080100782A1 Transflective Liquid Crystal Display Device and Method of Fabricating the Same 失效
标题翻译：透反液晶显示装置及其制造方法
公开(公告)号：US20080100782A1
公开(公告)日：2008-05-01
申请号：US11925487
申请日：2007-10-26
申请人： Yoon-Seok Choi , Young-Jin Chang , Jae-Beom Choi , Seung-Hwan Shim , Han-Na Jo
发明人： Yoon-Seok Choi , Young-Jin Chang , Jae-Beom Choi , Seung-Hwan Shim , Han-Na Jo
IPC分类号： G02F1/1335 , H01L21/70
CPC分类号： G02F1/133555 , G02F1/13362 , G02F1/13363 , G02F1/133788 , G02F2001/133567 , G02F2001/133638 , G02F2001/136231 , G02F2413/03 , G02F2413/09
摘要： A transflective liquid crystal display device has improved light efficiency. A method of fabricating a transflective liquid crystal display device including a thin film transistor substrate having a transmissive region and a reflective region, includes forming a retardation layer on a lower surface of the thin film transistor substrate, aligning a mask having a reflective region pattern on the lower surface of the thin film transistor substrate, and forming a light efficiency enhancer by selectively removing the retardation layer by irradiating a laser onto the lower surface of the thin film transistor substrate through the mask.
摘要翻译：半透射型液晶显示装置具有提高的光效率。一种制造半透射型液晶显示装置的方法，其包括具有透射区域和反射区域的薄膜晶体管基板，包括在薄膜晶体管基板的下表面上形成延迟层，将具有反射区域图案的掩模对准薄膜晶体管基板的下表面，并且通过通过掩模将激光照射到薄膜晶体管基板的下表面上选择性地去除相位差层来形成光效率增强器。

7. 发明授权

US07754549B2 Method of manufacturing thin film transistor array panel 有权
标题翻译：制造薄膜晶体管阵列面板的方法
公开(公告)号：US07754549B2
公开(公告)日：2010-07-13
申请号：US11839683
申请日：2007-08-16
申请人： Jae-Beom Choi , Young-jin Chang , Yoon-Seok Choi , Seung-Hwan Shim , Han-Na Jo , Jung-Hoon Shin , Joon-Young Koh
发明人： Jae-Beom Choi , Young-jin Chang , Yoon-Seok Choi , Seung-Hwan Shim , Han-Na Jo , Jung-Hoon Shin , Joon-Young Koh
IPC分类号： H01L29/786
CPC分类号： H01L21/02672 , H01L21/02532 , H01L27/1277 , H01L27/1281
摘要： A method of manufacturing a thin film transistor array panel includes forming an amorphous silicon film on an insulating substrate; forming a sacrificial film having an embossed surface on the amorphous silicon film; contacting a metal plate with the sacrificial film and performing heat-treatment for crystallizing the amorphous silicon film to change the amorphous silicon film to a polycrystalline silicon film; removing the metal plate and the sacrificial film; patterning the polycrystalline silicon film to form a semiconductor; forming a gate insulating layer which covers the semiconductor; forming a gate line on the gate insulating layer, a portion of the gate line overlapping the semiconductor; heavily doping a conductive impurity into portions of the semiconductor to form a source region and a drain region; forming an interlayer insulating layer which covers the gate line and the semiconductor; and forming a data line and an output electrode connected to the source and drain regions, respectively, on the interlayer insulating layer.
摘要翻译：制造薄膜晶体管阵列面板的方法包括在绝缘基板上形成非晶硅膜; 在所述非晶硅膜上形成具有压花表面的牺牲膜; 使金属板与牺牲膜接触，并进行热处理以使非晶硅膜结晶，将非晶硅膜改变为多晶硅膜; 去除金属板和牺牲膜; 图案化多晶硅膜以形成半导体; 形成覆盖半导体的栅极绝缘层; 在所述栅极绝缘层上形成栅极线，所述栅极线的一部分与所述半导体重叠; 将导电杂质重掺杂到半导体的部分中以形成源极区和漏极区; 形成覆盖所述栅极线和所述半导体的层间绝缘层; 以及分别在层间绝缘层上形成连接到源区和漏区的数据线和输出电极。

8. 发明授权

US08253892B2 Liquid crystal display and method for manufacturing the same 失效
标题翻译：液晶显示器及其制造方法
公开(公告)号：US08253892B2
公开(公告)日：2012-08-28
申请号：US12547039
申请日：2009-08-25
申请人： Seung-Hwan Shim , Gug-Rae Jo , Sung-Hoon Yang , Kap-Soo Yoon , Ki-Hun Jeong , Jae-Ho Choi , Yang-Ho Jung
发明人： Seung-Hwan Shim , Gug-Rae Jo , Sung-Hoon Yang , Kap-Soo Yoon , Ki-Hun Jeong , Jae-Ho Choi , Yang-Ho Jung
IPC分类号： G02F1/1335
CPC分类号： G02F1/136227 , G02F1/133514 , G02F2001/133565 , G02F2001/133567 , H01L27/1248
摘要： A liquid crystal display includes; a first substrate, a gate line and a data line disposed on the first substrate, a color filter including protrusions and depressions aligned with the data line, the color filter being disposed on the data line, a pixel electrode disposed on the color filter, a second substrate facing the first substrate, a common electrode disposed on the second substrate, and a liquid crystal layer interposed between the first substrate and the second substrate.
摘要翻译：液晶显示器包括：设置在第一基板上的第一基板，栅线和数据线，包括与数据线对准的突起和凹陷的滤色器，滤色器设置在数据线上，设置在滤色器上的像素电极，面对第一基板的第二基板，设置在第二基板上的公共电极以及插在第一基板和第二基板之间的液晶层。

9. 发明授权

US08184251B2 Thin film transistor array and method of manufacturing the same 有权
标题翻译：薄膜晶体管阵列及其制造方法
公开(公告)号：US08184251B2
公开(公告)日：2012-05-22
申请号：US12498526
申请日：2009-07-07
申请人： Ki-Hun Jeong , Seung-Hwan Shim , Joo-Han Kim , Hong-Kee Chin
发明人： Ki-Hun Jeong , Seung-Hwan Shim , Joo-Han Kim , Hong-Kee Chin
IPC分类号： G02F1/1333
CPC分类号： H01L27/1214 , H01L27/1288 , H01L29/4908
摘要： A method of manufacturing a thin film transistor array substrate includes: forming a gate pattern on a substrate; forming a first gate insulating film and a second gate insulating film on the substrate; forming a source/drain pattern and a semiconductor pattern on the substrate; forming a passivation film on the substrate; forming a photo-resist pattern on the passivation film; patterning the passivation film using the photo-resist pattern to form a passivation film pattern, the patterning of the passivation film including over-etching the passivation film to form an open region in the passivation film; forming a transparent electrode film on the substrate; removing the photo-resist pattern and a portion of the transparent electrode film on the photo-resist pattern; and forming a pixel electrode on the first gate insulating layer.
摘要翻译：制造薄膜晶体管阵列基板的方法包括：在基板上形成栅极图案; 在所述基板上形成第一栅极绝缘膜和第二栅极绝缘膜; 在衬底上形成源极/漏极图案和半导体图案; 在衬底上形成钝化膜; 在钝化膜上形成光刻胶图案; 使用光刻胶图形图案化钝化膜以形成钝化膜图案，钝化膜的图案化包括过蚀刻钝化膜以在钝化膜中形成开放区域; 在基板上形成透明电极膜; 在所述光刻胶图案上除去所述光刻胶图案和所述透明电极膜的一部分; 以及在所述第一栅极绝缘层上形成像素电极。

10. 发明授权

US08390776B2 Thin film transistor array and method of manufacturing the same 有权
标题翻译：薄膜晶体管阵列及其制造方法
公开(公告)号：US08390776B2
公开(公告)日：2013-03-05
申请号：US13450643
申请日：2012-04-19
申请人： Ki-Hun Jeong , Seung-Hwan Shim , Joo-Han Kim , Hong-Kee Chin
发明人： Ki-Hun Jeong , Seung-Hwan Shim , Joo-Han Kim , Hong-Kee Chin
IPC分类号： G02F1/13
CPC分类号： H01L27/1214 , H01L27/1288 , H01L29/4908
摘要： A method of manufacturing a thin film transistor array substrate includes: forming a gate pattern on a substrate; forming a first gate insulating film and a second gate insulating film on the substrate; forming a source/drain pattern and a semiconductor pattern on the substrate; forming a passivation film on the substrate; forming a photo-resist pattern on the passivation film; patterning the passivation film using the photo-resist pattern to form a passivation film pattern, the patterning of the passivation film including over-etching the passivation film to form an open region in the passivation film; forming a transparent electrode film on the substrate; removing the photo-resist pattern and a portion of the transparent electrode film on the photo-resist pattern; and forming a pixel electrode on the first gate insulating layer.
摘要翻译：制造薄膜晶体管阵列基板的方法包括：在基板上形成栅极图案; 在所述基板上形成第一栅极绝缘膜和第二栅极绝缘膜; 在衬底上形成源极/漏极图案和半导体图案; 在衬底上形成钝化膜; 在钝化膜上形成光刻胶图案; 使用光刻胶图形图案化钝化膜以形成钝化膜图案，钝化膜的图案化包括过蚀刻钝化膜以在钝化膜中形成开放区域; 在基板上形成透明电极膜; 在所述光刻胶图案上除去所述光刻胶图案和所述透明电极膜的一部分; 以及在所述第一栅极绝缘层上形成像素电极。

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