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    • 10. 发明申请
    • CAPACITOR OF A MEMORY DEVICE AND METHOD FOR FORMING THE SAME
    • 存储器件的电容器及其形成方法
    • US20080003768A1
    • 2008-01-03
    • US11618628
    • 2006-12-29
    • Jae Min Oh
    • Jae Min Oh
    • H01L21/20
    • B82Y10/00H01L27/10817H01L27/10852H01L28/65H01L28/91
    • A capacitor of a memory device is formed on a semiconductor substrate having transistors thereon. A mold layer having holes defined therein is formed on the semiconductor substrate. A catalytic metal layer is formed proximate to a bottom boundary of each hole. Reaction gas is fed to the catalytic metal layer to form carbon nanotubes via a catalytic reaction of the reaction gas by the catalytic metal layer. After forming a lower electrode layer proximate to the bottom boundary and sidewall of each hole and over the carbon nanotubes, a dielectric layer is deposited over the lower electrode layer. Upper electrodes are formed on the dielectric layer to form capacitors electrically connected to the transistors.
    • 存储器件的电容器形成在其上具有晶体管的半导体衬底上。 在半导体衬底上形成具有限定在其中的孔的模具层。 在每个孔的底部边界附近形成催化金属层。 通过催化金属层的反应气体的催化反应将反应气体送入催化金属层,形成碳纳米管。 在靠近每个孔的底部边界和侧壁并在碳纳米管之上形成下部电极层之后,在下部电极层上沉积电介质层。 上电极形成在电介质层上以形成电连接到晶体管的电容器。