专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07759052B2 Anti-reflective polymer, anti-reflective composition containing the same, and method for forming pattern using the same 失效
标题翻译：防反射聚合物，含有该抗反射聚合物的抗反射组合物，以及使用其形成图案的方法
公开(公告)号：US07759052B2
公开(公告)日：2010-07-20
申请号：US12135644
申请日：2008-06-09
申请人： Jae Chang Jung , Sung Koo Lee
发明人： Jae Chang Jung , Sung Koo Lee
IPC分类号： G03F7/11 , G03F7/26 , C08F28/00
CPC分类号： G03F7/091 , C09D133/14 , C08L2666/02
摘要： A polymer for crosslinking an anti-reflective film has a high refractive index. An anti-reflective composition containing the polymer is useful in a damascene process and an immersion lithography process using ArF (193 nm) of a semiconductor device manufacturing process.
摘要翻译：用于交联抗反射膜的聚合物具有高折射率。含有聚合物的抗反射组合物可用于使用半导体器件制造工艺的ArF（193nm）的镶嵌工艺和浸没光刻工艺。

2. 发明授权

US07807336B2 Method for manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07807336B2
公开(公告)日：2010-10-05
申请号：US11468080
申请日：2006-08-29
申请人： Sung Koo Lee , Jae Chang Jung
发明人： Sung Koo Lee , Jae Chang Jung
IPC分类号： G03F7/00
CPC分类号： H01L21/0337 , H01L21/0276 , H01L21/0338 , Y10S430/151
摘要： Disclosed herein is a method for manufacturing a semiconductor device that includes performing an O2 plasma treatment step after forming a Si-containing anti-reflection film.
摘要翻译：本文公开了一种制造半导体器件的方法，其包括在形成含Si抗反射膜之后执行O 2等离子体处理步骤。

3. 发明授权

US07655568B2 Method for manufacturing underlying pattern of semiconductor device 失效
标题翻译：制造半导体器件底层图案的方法
公开(公告)号：US07655568B2
公开(公告)日：2010-02-02
申请号：US11468084
申请日：2006-08-29
申请人： Sung Koo Lee , Jae Chang Jung
发明人： Sung Koo Lee , Jae Chang Jung
IPC分类号： H01L21/311
CPC分类号： H01L21/0276 , H01L21/0337 , H01L21/0338
摘要： Disclosed herein is a method for manufacturing a semiconductor device that includes performing an O2 plasma treatment step after forming a Si-containing photoresist film.
摘要翻译：本文公开了一种制造半导体器件的方法，其包括在形成含Si光致抗蚀剂膜之后执行O 2等离子体处理步骤。

4. 发明申请

US20100173249A1 Method for Manufacturing a Semiconductor Device 审中-公开
标题翻译：半导体器件的制造方法
公开(公告)号：US20100173249A1
公开(公告)日：2010-07-08
申请号：US12728979
申请日：2010-03-22
申请人： Jae Chang Jung , Sung Koo Lee
发明人： Jae Chang Jung , Sung Koo Lee
IPC分类号： G03F7/20
CPC分类号： G03F7/2041 , G03F7/38
摘要： Disclosed herein is a composition for removing an immersion lithography solution. The composition includes an organic solvent and an acid compound. Also disclosed is a method for manufacturing a semiconductor device including an immersion lithography process. When a photoresist pattern is formed by the immersion lithography process, an exposure process is performed on a photoresist film formed over an underlying layer with an immersion lithography exposer. Then, the composition is dripped over the wafer to remove residual immersion lithography solution on the photoresist film, thereby improving a water mark defect phenomenon.
摘要翻译：本文公开了一种用于去除浸没式光刻溶液的组合物。该组合物包括有机溶剂和酸化合物。还公开了一种制造包括浸没式光刻工艺的半导体器件的方法。当通过浸没光刻工艺形成光致抗蚀剂图案时，利用浸没式光刻曝光器对形成在下层上的光致抗蚀剂膜进行曝光处理。然后，将组合物滴在晶片上以除去光致抗蚀剂膜上的残留浸没光刻溶液，从而改善水痕缺陷现象。

5. 发明申请

US20090298291A1 METHOD FOR FORMING A PATTERN OF A SEMICONDUCTOR DEVICE 审中-公开
标题翻译：形成半导体器件图案的方法
公开(公告)号：US20090298291A1
公开(公告)日：2009-12-03
申请号：US12259962
申请日：2008-10-28
申请人： Sung Koo LEE , Jae Chang Jung
发明人： Sung Koo LEE , Jae Chang Jung
IPC分类号： H01L21/3213
CPC分类号： H01L21/0273 , G03F7/40 , H01L21/0337 , H01L21/0338
摘要： In a method for forming a pattern of a semiconductor device, an ultra fine pattern is formed using a spacer patterning technology to overcome resolution limits of an exposer. A silicon-containing resist enhancement lithography assisted by a chemical shrink (RELACS) layer is formed with a spin-con-coating method in a track apparatus over a photoresist pattern. As a result, a cross-linking reaction is generated between the RELACS layer and the photoresist patterns to form the spacer, and the spacer is used as a mask in the patterning process.
摘要翻译：在用于形成半导体器件的图案的方法中，使用间隔物图案化技术形成超细图案以克服曝光器的分辨率极限。通过化学收缩（RELACS）层辅助的含硅抗蚀剂增强光刻通过光刻胶图案上的轨道装置中的自旋 - 涂覆法形成。结果，在RELACS层和光致抗蚀剂图案之间产生交联反应以形成间隔物，并且在图案化工艺中使用间隔物作为掩模。

6. 发明申请

US20080176047A1 Liquid Composition for Immersion Lithography and Lithography Method Using the Same 审中-公开
标题翻译：用于浸没光刻的液体组合物和使用其的平版印刷方法
公开(公告)号：US20080176047A1
公开(公告)日：2008-07-24
申请号：US11767275
申请日：2007-06-22
申请人： Keun Kyu Kong , Hyoung Ryeun Kim , Hyeong Soo Kim , Jae Chang Jung , Sung Koo Lee
发明人： Keun Kyu Kong , Hyoung Ryeun Kim , Hyeong Soo Kim , Jae Chang Jung , Sung Koo Lee
IPC分类号： G03C1/73 , B41M5/00 , G03F7/26 , G03B27/42
CPC分类号： G03F7/2041 , G03F7/70341 , Y10T428/24802
摘要： Disclosed herein are a liquid composition for immersion lithography and a lithography method using the composition. The liquid composition includes at least one nonionic surfactant selected from the group comprising of a polyvinyl alcohol, a pentaerythritol-based compound, a polymer containing an alkylene oxide, and a compound represented by Formula I: wherein R is a linear or branched, substituted C1-C40 alkyl, and n is an integer ranging from 10 to 10,000. The surface tension of the liquid composition is reduced by the nonionic surfactant, thereby solving the problem that the liquid composition is not completely filled or is partially concentrated on a wafer having a fine topology and removing micro bubbles between the photoresist film and the liquid composition.
摘要翻译：本文公开了用于浸没式光刻的液体组合物和使用该组合物的光刻方法。液体组合物包含至少一种非离子表面活性剂，其选自聚乙烯醇，季戊四醇基化合物，含有烯化氧的聚合物和由式I表示的化合物：其中R是直链或支链的取代的C C 1 -C 40烷基，n是10至10,000的整数。通过非离子表面活性剂降低液体组合物的表面张力，从而解决液体组合物未完全填充或部分浓缩在具有细微拓扑结构的晶片上并且去除光致抗蚀剂膜和液体组合物之间的微小气泡的问题。

7. 发明申请

US20070148983A1 Method for Manufacturing Semiconductor Device 失效
标题翻译：半导体器件制造方法
公开(公告)号：US20070148983A1
公开(公告)日：2007-06-28
申请号：US11468084
申请日：2006-08-29
申请人： Sung Koo Lee , Jae Chang Jung
发明人： Sung Koo Lee , Jae Chang Jung
IPC分类号： H01L21/302
CPC分类号： H01L21/0276 , H01L21/0337 , H01L21/0338
摘要： Disclosed herein is a method for manufacturing a semiconductor device that includes performing an O2 plasma treatment step after forming a Si-containing photoresist film.
摘要翻译：本文公开了一种制造半导体器件的方法，其包括在形成含Si光致抗蚀剂膜之后执行O 2等离子体处理步骤。

8. 发明授权

US07563753B2 Cleaning solution for removing photoresist 有权
标题翻译：用于除去光致抗蚀剂的清洁溶液
公开(公告)号：US07563753B2
公开(公告)日：2009-07-21
申请号：US10317578
申请日：2002-12-12
申请人： Geun Su Lee , Jae Chang Jung , Ki Soo Shin , Keun Kyu Kong , Sung Koo Lee , Young Sun Hwang
发明人： Geun Su Lee , Jae Chang Jung , Ki Soo Shin , Keun Kyu Kong , Sung Koo Lee , Young Sun Hwang
IPC分类号： C11D7/50
CPC分类号： C11D3/3738 , C11D1/44 , C11D1/72 , C11D1/721 , C11D1/722 , C11D3/373 , C11D3/3742 , C11D7/263 , C11D7/265 , C11D7/267 , C11D7/3218 , C11D7/34 , C11D11/0047 , G03F7/422
摘要： Cleaning solutions for removing photoresist resins and a method of forming patterns using the same are disclosed. The cleaning solution includes water (H2O) as main component, one or more surfactants as additive selected from the group consisting of polyoxyalkylene compounds, a salt of alcohol amine of Formula 1 and hydrocarbon compounds having carboxylic acid (—COOH) group, a salt of alcohol amine of Formula 1 and hydrocarbon compounds having sulfonic acid (—SO3H) group, polyethylene glycol compounds, compounds of Formula 3, compounds having a molecular weight ranging from 1000 to 10000 including repeating unit of Formula 4, polyether denatured silicon compounds and alcohol compounds. wherein R1, R2, R3, R4, R5, A, l and n are defined in the specification.
摘要翻译：公开了用于除去光致抗蚀剂树脂的清洁溶液和使用其形成图案的方法。清洗溶液包括作为主要成分的水（H 2 O），一种或多种作为添加剂的表面活性剂，其选自聚氧化烯化合物，式1的醇胺盐和具有羧酸（-COOH）基团的烃化合物，式1的醇胺和具有磺酸（-SO 3 H）基团的烃化合物，聚乙二醇化合物，式3化合物，分子量为1000至10000的化合物，包括式4的重复单元，聚醚变性硅化合物和醇化合物。其中R1，R2，R3，R4，R5，A，1和n在本说明书中定义。

9. 发明授权

US07138218B2 Process for forming an ultra fine pattern using a bottom anti-reflective coating film containing an acid generator 有权
公开(公告)号：US07138218B2
公开(公告)日：2006-11-21
申请号：US10321123
申请日：2002-12-17
申请人： Sung Koo Lee , Jae Chang Jung , Geun Su Lee , Ki Soo Shin
发明人： Sung Koo Lee , Jae Chang Jung , Geun Su Lee , Ki Soo Shin
IPC分类号： G03F7/004
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/091 , Y10S430/114 , Y10S430/119 , Y10S430/12 , Y10S430/151
摘要： A process of forming ultra fine patterns using bottom anti-reflective coating containing acid generator. More particularly, a process of forming vertical patterns using an organic bottom anti-reflective coating containing excessive amount of acid generator, in order to prevent formation of sloping patterns due to photoresist resins absorbing wavelength of light used as light sources during lithography process using light sources such as KrF, ArF, VUV, EUV, E-beam and ion beam, even when photoresist resins having high absorbance to light source are used.

10. 发明授权

US07749680B2 Photoresist composition and method for forming pattern of a semiconductor device 失效
标题翻译：用于形成半导体器件的图案的光刻胶组合物和方法
公开(公告)号：US07749680B2
公开(公告)日：2010-07-06
申请号：US11768718
申请日：2007-06-26
申请人： Jae Chang Jung , Sung Koo Lee
发明人： Jae Chang Jung , Sung Koo Lee
IPC分类号： G03F7/039 , G03F7/038 , G03F7/20 , G03F7/30 , G03F7/36
CPC分类号： G03F7/0382 , G03F7/40 , Y10S430/106 , Y10S430/111 , Y10S430/122 , Y10S430/126
摘要： A photoresist composition includes a base resin, a copolymer of acrylic acid or methacrylic acid and 3,3-dimethoxypropene, a photoacid generator, an organic base, and an organic solvent, and is used for forming a fine (micro) pattern in a semiconductor device by double patterning. The invention method can markedly reduce the number of steps in etching and hard mask deposition processes, so that work hours and manufacturing costs may be reduced, contributing to an increase in yield of semiconductor devices.
摘要翻译：光致抗蚀剂组合物包括基础树脂，丙烯酸或甲基丙烯酸和3,3-二甲基丙烯的共聚物，光酸产生剂，有机碱和有机溶剂，并且用于在半导体中形成精细（微）图案器件通过双重图案化。本发明的方法可以显着减少蚀刻和硬掩模沉积工艺中的步骤数量，从而可以减少工作时间和制造成本，有助于提高半导体器件的产量。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式