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1. 发明授权

US06715688B2 Contactless IC card 失效
标题翻译：非接触式IC卡
公开(公告)号：US06715688B2
公开(公告)日：2004-04-06
申请号：US09906148
申请日：2001-07-17
申请人： Izumi Kobayashi , Takanori Watanabe
发明人： Izumi Kobayashi , Takanori Watanabe
IPC分类号： G06K1906
CPC分类号： G06K19/0775 , G06K19/07749 , G06K19/07779 , G06K19/07781 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/4813 , H01L2924/30107 , H01L2924/00 , H01L2924/2076 , H01L2924/20759 , H01L2924/20758 , H01L2924/00014
摘要： An improved contactless integrated circuit (IC) card having one or more laminate members, a wire-wound coil provided on the laminate member for receiving power and for transmitting and receiving signals to and from an external device, and an IC module for inputting and outputting the signals, the wire-wound coil being coupled to the IC module, wherein the improvement comprises an end portion of the wire-wound coil being formed into a buffer portion near the point at which the wire-wound coil is coupled to the IC module so as to absorb tension generated in the wire-wound coil.
摘要翻译：一种具有一个或多个层叠构件的改进的非接触集成电路（IC）卡，设置在层叠构件上用于接收电力并用于从外部装置发送和接收信号的绕线线圈以及用于输入和输出的IC模块所述线圈绕组线圈与所述IC模块耦合，其中所述改进包括所述绕线线圈的端部形成在所述绕线线圈与所述IC模块耦合的点附近的缓冲部分中以吸收线缠绕线圈产生的张力。

2. 发明授权

US09030775B2 Impact resistant rotating device with increased-thickness portion relationship and suction plate configuration 有权
标题翻译：具有较大厚度部分关系和吸盘结构的抗冲击旋转装置
公开(公告)号：US09030775B2
公开(公告)日：2015-05-12
申请号：US13104870
申请日：2011-05-10
申请人： Takanori Watanabe , Takuji Yamada , Susumu Ando , Hiroshi Iwai
发明人： Takanori Watanabe , Takuji Yamada , Susumu Ando , Hiroshi Iwai
IPC分类号： G11B19/20 , G11B25/04 , H02K5/04 , G11B33/14
CPC分类号： G11B19/2045 , G11B19/2036 , G11B25/043 , G11B33/148 , Y10T29/49639
摘要： In a disk drive device, a magnetic recording disk is mounted on a hub. A base rotatably supports the hub via a bearing unit. The base has a ring-shaped wall that surrounds the bearing unit and that protrudes towards the hub. A laminated core is fixed to the base. The laminated core has a ring portion and twelve teeth that radially outwardly extend from the ring portion. Coils are wound around the twelve teeth. The base includes an increasing-thickness portion formed so that the less the distance between a part of the increasing-thickness portion and the ring-shaped wall is, the thicker the part of the increasing-thickness portion becomes.
摘要翻译：在磁盘驱动装置中，磁记录盘安装在集线器上。基座通过轴承单元可旋转地支撑毂。基座具有围绕轴承单元并朝向轮毂突出的环形壁。层叠铁心固定在基座上。层叠铁心具有环部分和从环部分径向向外延伸的十二个齿。线圈缠绕在十二颗牙齿上。基部包括增厚部分，其形成为增厚部分的一部分与环形壁之间的距离越小，增厚部分的部分越厚。

3. 发明授权

US08501520B2 Manufacturing method for a solid-state image sensor 有权
标题翻译：固态图像传感器的制造方法
公开(公告)号：US08501520B2
公开(公告)日：2013-08-06
申请号：US12697420
申请日：2010-02-01
申请人： Katsunori Hirota , Akira Ohtani , Kazuaki Tashiro , Yusuke Onuki , Takanori Watanabe , Takeshi Ichikawa
发明人： Katsunori Hirota , Akira Ohtani , Kazuaki Tashiro , Yusuke Onuki , Takanori Watanabe , Takeshi Ichikawa
IPC分类号： H01L51/40
CPC分类号： H01L27/14689 , H01L21/26513 , H01L21/324 , H01L27/14621 , H01L27/14643 , H01L27/14698
摘要： A manufacturing method for a solid-state image sensor, the method comprises the steps of: forming a charge storage region in a photoelectric converting unit by implanting a semiconductor substrate with ions of an impurity of a first conductivity type, using a first mask; heating the semiconductor substrate at a temperature of no less than 800° C. and no more than 1200° C. through RTA (Rapid Thermal Annealing); forming a surface region of the charge storage region by implanting the semiconductor substrate with ions of an impurity of a second conductivity type, using a second a mask; heating the semiconductor substrate at a temperature of no less than 800° C. and no more than 1200° C. through RTA (Rapid Thermal Annealing); and forming an antireflection film that covers the photoelectric converting unit at a temperature of less than 800° C., after the step of forming the surface region, in this order.
摘要翻译：一种固态图像传感器的制造方法，该方法包括以下步骤：利用第一掩模，通过用第一导电类型的杂质的离子注入半导体衬底，在光电转换单元中形成电荷存储区域; 通过RTA（快速热退火）在不低于800℃且不超过1200℃的温度下加热半导体衬底; 通过使用第二掩模将具有第二导电类型的杂质的离子注入半导体衬底来形成电荷存储区域的表面区域; 通过RTA（快速热退火）在不低于800℃且不超过1200℃的温度下加热半导体衬底; 以及在形成表面区域的步骤之后依次形成在小于800℃的温度下覆盖光电转换单元的抗反射膜。

4. 发明授权

US08383497B2 Method for manufacturing solid-state image sensor 有权
标题翻译：固态图像传感器的制造方法
公开(公告)号：US08383497B2
公开(公告)日：2013-02-26
申请号：US13088465
申请日：2011-04-18
申请人： Takanori Watanabe
发明人： Takanori Watanabe
IPC分类号： H01L21/425
CPC分类号： H01L27/14689 , H01L27/14641 , H01L27/14643
摘要： A method for manufacturing a sensor having pixels on a substrate, each pixel including a photoelectric converter, a charge-voltage converter, and a gate for forming a channel for transferring charges in the photoelectric converter to the charge-voltage converter, comprises a step of implanting ions into target regions of the substrate, where the photoelectric converters are to be formed, wherein the step is performed N times, and in each of the steps, the ions are implanted along a direction with an inclined angle with respect to a normal to the substrate surface, the target regions where the ions are implanted are different in each step, and for each step, a mask is formed on the substrate, having an opening for every N pixels, a plurality of the openings periodically arranged in a direction along an intersection line between the surface and a plane determined by the normal and the direction.
摘要翻译：一种用于制造在基板上具有像素的传感器的方法，每个像素包括光电转换器，电荷 - 电压转换器和用于形成用于将光电转换器中的电荷转移到电荷 - 电压转换器的通道的栅极，包括以下步骤：将离子注入到要形成光电转换器的衬底的靶区域中，其中步骤进行N次，并且在每个步骤中，离子沿着相对于法向的倾斜角的方向注入衬底表面，离子注入的目标区域在每个步骤中是不同的，并且对于每个步骤，在基板上形成掩模，每个N个像素具有开口，沿着沿着方向周期性地排列的多个开口表面与平面和方向确定的平面之间的交点。

5. 发明授权

US08213114B2 Disk drive hub with motor coil wiring arrangement to reduce thickness and suppressed torque decrease 失效
标题翻译：具有电机线圈布线布置的磁盘驱动器集线器，以减小厚度并抑制转矩减小
公开(公告)号：US08213114B2
公开(公告)日：2012-07-03
申请号：US12545751
申请日：2009-08-21
申请人： Takanori Watanabe , Hiroshi Iwai , Tomoyuki Tashiro
发明人： Takanori Watanabe , Hiroshi Iwai , Tomoyuki Tashiro
IPC分类号： G11B17/02
CPC分类号： G11B19/2009 , G11B19/2045 , H02K3/28
摘要： The disk drive device includes a base member, a hub, a bearing unit which is arranged on the base member and which rotatably supports the hub, and a spindle drive unit which drives the hub to rotate. The spindle drive unit includes a stator core having a salient pole, a coil wound around the salient pole and a magnet opposed to the salient pole. The hub formed of magnetic material includes an outer cylinder portion engaged with an inner circumference of a recording disk and an inner cylinder portion to which an outer circumference of the magnet is fixed. The diameter of the inner cylinder portion is larger than the diameter of the outer cylinder portion.
摘要翻译：盘驱动装置包括基座构件，轮毂，布置在基座构件上并且可旋转地支撑轮毂的轴承单元和驱动轮毂旋转的主轴驱动单元。主轴驱动单元包括具有凸极的定子芯，缠绕在凸极上的线圈和与凸极相对的磁体。由磁性材料构成的毂包括与记录盘的内周接合的外筒部和固定有磁体的外周的内筒部。内筒部的直径大于外筒部的直径。

6. 发明授权

US08173476B2 Image pickup device and image pickup system 有权
公开(公告)号：US08173476B2
公开(公告)日：2012-05-08
申请号：US12481008
申请日：2009-06-09
申请人： Takanori Watanabe , Tetsuya Itano , Mahito Shinohara
发明人： Takanori Watanabe , Tetsuya Itano , Mahito Shinohara
IPC分类号： H04N5/335
CPC分类号： H04N5/3598 , H04N5/3595 , H04N5/374
摘要： There is provided an image pickup device, including a photoelectric conversion element converting light into charges, a transfer gate for transferring the converted charges to a floating node, a source follower transistor for outputting a signal based on a voltage of the floating node to a signal line, and a clip circuit clipping the signal line at a first voltage and a second voltage.

7. 发明申请

US20110281392A1 METHOD FOR MANUFACTURING SOLID-STATE IMAGE SENSOR 有权
标题翻译：制造固态图像传感器的方法
公开(公告)号：US20110281392A1
公开(公告)日：2011-11-17
申请号：US13088465
申请日：2011-04-18
申请人： Takanori Watanabe
发明人： Takanori Watanabe
IPC分类号： H01L31/18
CPC分类号： H01L27/14689 , H01L27/14641 , H01L27/14643
摘要： A method for manufacturing a sensor having pixels on a substrate, each pixel including a photoelectric converter, a charge-voltage converter, and a gate for forming a channel for transferring charges in the photoelectric converter to the charge-voltage converter, comprises a step of implanting ions into target regions, of the substrate, where the photoelectric converters are to be formed, wherein the step is performed N times, in each of the steps, the ions are implanted along a direction with an inclined angle with respect to a normal to the substrate surface, the target regions where the ions are implanted are different in each step, and for each step, a mask is formed on the substrate, having an opening for every N pixels, a plurality of the openings periodically arranged in a direction along an intersection line between the surface and a plane determined by the normal and the direction.
摘要翻译：一种用于制造在基板上具有像素的传感器的方法，每个像素包括光电转换器，电荷 - 电压转换器和用于形成用于将光电转换器中的电荷转移到电荷 - 电压转换器的通道的栅极，包括以下步骤：将离子注入到要形成光电转换器的衬底的靶区域中，其中步骤进行N次，在每个步骤中，离子沿着相对于法向的倾斜角度的方向注入衬底表面，离子注入的目标区域在每个步骤中是不同的，并且对于每个步骤，在基板上形成掩模，每个N个像素具有开口，沿着沿着方向周期性地排列的多个开口表面与平面和方向确定的平面之间的交点。

8. 发明申请

US20110242388A1 IMAGE SENSING DEVICE AND CAMERA 有权
标题翻译：图像传感装置和摄像机
公开(公告)号：US20110242388A1
公开(公告)日：2011-10-06
申请号：US13139558
申请日：2010-01-20
申请人： Takanori Watanabe , Mineo Shimotsusa , Takeshi Ichikawa , Hajime Ikeda , Yasuhiro Sekine , Akira Ohtani , Takeshi Kojima
发明人： Takanori Watanabe , Mineo Shimotsusa , Takeshi Ichikawa , Hajime Ikeda , Yasuhiro Sekine , Akira Ohtani , Takeshi Kojima
IPC分类号： H04N5/335 , H01L27/146
CPC分类号： H01L27/1463 , H01L27/14609 , H01L27/1464 , H01L27/14641 , H01L27/14689 , H01L29/7833
摘要： An image sensing device comprises a pixel array, and a peripheral circuit, a column selecting circuit, and a readout, wherein each pixel includes a photodiode, a floating diffusion, a transfer PMOS transistor to the floating diffusion, an amplifier PMOS transistor, and a reset PMOS transistor, the amplifier PMOS transistor has a gate which is formed by an n-type conductive pattern, and is isolated by a first element isolation region and an n-type impurity region which covers at least a lower portion of the first element isolation region, and each PMOS transistor included in the column selecting circuit has a gate which is formed by a p-type conductive pattern and is isolated by a second element isolation region, and an n-type impurity concentration in a region adjacent to a lower portion of the second element isolation region is lower than that in the n-type impurity region.
摘要翻译：图像感测装置包括像素阵列，外围电路，列选择电路和读出器，其中每个像素包括光电二极管，浮动扩散，到浮动扩散的转移PMOS晶体管，放大器PMOS晶体管和复位PMOS晶体管，放大器PMOS晶体管具有由n型导电图案形成的栅极，并且被第一元件隔离区域和覆盖至少第一元件隔离的下部的n型杂质区隔离区域，并且列选择电路中包括的每个PMOS晶体管具有由p型导电图案形成并由第二元件隔离区域隔离的栅极，并且与下部分相邻的区域中的n型杂质浓度的第二元件隔离区域低于n型杂质区域。

9. 发明申请

US20110240835A1 PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING METHOD THEREOF, AND CAMERA 有权
标题翻译：光电转换装置的制造方法及相机
公开(公告)号：US20110240835A1
公开(公告)日：2011-10-06
申请号：US13139588
申请日：2010-01-08
申请人： Tadashi Sawayama , Katsunori Hirota , Takanori Watanabe , Takeshi Ichikawa
发明人： Tadashi Sawayama , Katsunori Hirota , Takanori Watanabe , Takeshi Ichikawa
IPC分类号： H01L27/14 , H01L31/02
CPC分类号： H01L27/14689 , H01L27/1463 , H01L27/1464 , H01L27/14641 , H01L27/14643
摘要： A photoelectric conversion device comprises an n-type surface region, a p-type region which is formed under the surface region, and an n-type buried layer which is formed under the p-type region, wherein the surface region, the p-type region, and the buried layer form a buried photodiode, and a diffusion coefficient of a dominant impurity of the surface region is smaller than a diffusion coefficient of a dominant impurity of the buried layer.
摘要翻译：光电转换装置包括n型表面区域，形成在表面区域下方的p型区域和形成在p型区域下面的n型掩埋层，其中，表面区域，p-型区域，并且掩埋层形成掩埋光电二极管，并且表面区域的主要杂质的扩散系数小于掩埋层的主要杂质的扩散系数。

10. 发明授权

US07928518B2 P-channel power MIS field effect transistor and switching circuit 有权
标题翻译： P沟道功率MIS场效应晶体管和开关电路
公开(公告)号：US07928518B2
公开(公告)日：2011-04-19
申请号：US12568415
申请日：2009-09-28
申请人： Tadahiro Ohmi , Akinobu Teramoto , Hiroshi Akahori , Keiichi Nii , Takanori Watanabe
发明人： Tadahiro Ohmi , Akinobu Teramoto , Hiroshi Akahori , Keiichi Nii , Takanori Watanabe
IPC分类号： H01L29/76
CPC分类号： H01L29/7813 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L29/045 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66734
摘要： In a P-channel power MIS field effect transistor formed on a silicon surface having substantially a (110) plane, a gate insulation film is used which provides a gate-to-source breakdown voltage of 10 V or more, and planarizes the silicon surface, or contains Kr, Ar, or Xe.
摘要翻译：在形成在具有（110）面的硅表面上的P沟道功率MIS场效应晶体管中，使用提供10V以上的栅极 - 源极击穿电压的栅极绝缘膜，并平坦化硅表面，或含有Kr，Ar或Xe。

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