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1. 发明授权

US08501520B2 Manufacturing method for a solid-state image sensor 有权
标题翻译：固态图像传感器的制造方法
公开(公告)号：US08501520B2
公开(公告)日：2013-08-06
申请号：US12697420
申请日：2010-02-01
申请人： Katsunori Hirota , Akira Ohtani , Kazuaki Tashiro , Yusuke Onuki , Takanori Watanabe , Takeshi Ichikawa
发明人： Katsunori Hirota , Akira Ohtani , Kazuaki Tashiro , Yusuke Onuki , Takanori Watanabe , Takeshi Ichikawa
IPC分类号： H01L51/40
CPC分类号： H01L27/14689 , H01L21/26513 , H01L21/324 , H01L27/14621 , H01L27/14643 , H01L27/14698
摘要： A manufacturing method for a solid-state image sensor, the method comprises the steps of: forming a charge storage region in a photoelectric converting unit by implanting a semiconductor substrate with ions of an impurity of a first conductivity type, using a first mask; heating the semiconductor substrate at a temperature of no less than 800° C. and no more than 1200° C. through RTA (Rapid Thermal Annealing); forming a surface region of the charge storage region by implanting the semiconductor substrate with ions of an impurity of a second conductivity type, using a second a mask; heating the semiconductor substrate at a temperature of no less than 800° C. and no more than 1200° C. through RTA (Rapid Thermal Annealing); and forming an antireflection film that covers the photoelectric converting unit at a temperature of less than 800° C., after the step of forming the surface region, in this order.
摘要翻译：一种固态图像传感器的制造方法，该方法包括以下步骤：利用第一掩模，通过用第一导电类型的杂质的离子注入半导体衬底，在光电转换单元中形成电荷存储区域; 通过RTA（快速热退火）在不低于800℃且不超过1200℃的温度下加热半导体衬底; 通过使用第二掩模将具有第二导电类型的杂质的离子注入半导体衬底来形成电荷存储区域的表面区域; 通过RTA（快速热退火）在不低于800℃且不超过1200℃的温度下加热半导体衬底; 以及在形成表面区域的步骤之后依次形成在小于800℃的温度下覆盖光电转换单元的抗反射膜。

2. 发明申请

US20100203667A1 MANUFACTURING METHOD FOR A SOLID-STATE IMAGE SENSOR 有权
标题翻译：一种固态图像传感器的制造方法
公开(公告)号：US20100203667A1
公开(公告)日：2010-08-12
申请号：US12697420
申请日：2010-02-01
申请人： Katsunori Hirota , Akira Ohtani , Kazuaki Tashiro , Yusuke Onuki , Takanori Watanabe , Takeshi Ichikawa
发明人： Katsunori Hirota , Akira Ohtani , Kazuaki Tashiro , Yusuke Onuki , Takanori Watanabe , Takeshi Ichikawa
IPC分类号： H01L31/18 , H01L21/265
CPC分类号： H01L27/14689 , H01L21/26513 , H01L21/324 , H01L27/14621 , H01L27/14643 , H01L27/14698
摘要： A manufacturing method for a solid-state image sensor, the method comprises the steps of: forming a charge storage region in a photoelectric converting unit by implanting a semiconductor substrate with ions of an impurity of a first conductivity type, using a first mask; heating the semiconductor substrate at a temperature of no less than 800° C. and no more than 1200° C. through RTA (Rapid Thermal Annealing); forming a surface region of the charge storage region by implanting the semiconductor substrate with ions of an impurity of a second conductivity type, using a second a mask; heating the semiconductor substrate at a temperature of no less than 800° C. and no more than 1200° C. through RTA (Rapid Thermal Annealing); and forming an antireflection film that covers the photoelectric converting unit at a temperature of less than 800° C., after the step of forming the surface region, in this order.
摘要翻译：一种固态图像传感器的制造方法，该方法包括以下步骤：利用第一掩模，通过用第一导电类型的杂质的离子注入半导体衬底，在光电转换单元中形成电荷存储区; 通过RTA（快速热退火）在不低于800℃且不超过1200℃的温度下加热半导体衬底; 通过使用第二掩模将具有第二导电类型的杂质的离子注入半导体衬底来形成电荷存储区域的表面区域; 通过RTA（快速热退火）在不低于800℃且不超过1200℃的温度下加热半导体衬底; 以及在形成表面区域的步骤之后依次形成在小于800℃的温度下覆盖光电转换单元的抗反射膜。

3. 发明申请

US20110007196A1 SOLID-STATE IMAGING APPARATUS 有权
标题翻译：固态成像装置
公开(公告)号：US20110007196A1
公开(公告)日：2011-01-13
申请号：US12933471
申请日：2009-04-30
申请人： Yuichiro Yamashita , Masahiro Kobayashi , Takanori Watanabe , Shinsuke Kojima , Takeshi Ichikawa , Yusuke Onuki
发明人： Yuichiro Yamashita , Masahiro Kobayashi , Takanori Watanabe , Shinsuke Kojima , Takeshi Ichikawa , Yusuke Onuki
IPC分类号： H04N5/335
CPC分类号： H04N5/378 , H01L27/14603 , H01L27/14609 , H01L27/14641 , H01L27/14643 , H04N5/359 , H04N5/37452 , H04N5/37457
摘要： A solid-state imaging apparatus including a plurality of pixels each including: a first holding portion for holding signal carriers from a photoelectric conversion portion; an amplifying portion for amplifying and reading a signal based on the signal carriers generated in the photoelectric conversion portion; and a carrier discharging control portion for discharging charge carriers in the photoelectric conversion portion to an OFD region, and having a carrier path between the photoelectric conversion portion and the first carrier holding portion, in which the solid-state imaging apparatus further includes a second carrier holding portion electrically connected with the first carrier portion in parallel through a first transfer unit, when viewed from an output node of the photoelectric conversion portion, thereby smoothing an movie imaging without causing discontinuous frame while suppressing generation of noise mixing into the charge carrier holding portion.
摘要翻译：一种固态成像装置，包括多个像素，每个像素包括：第一保持部分，用于保持来自光电转换部分的信号载流子; 放大部分，用于基于在光电转换部分中产生的信号载波放大和读取信号; 以及用于将光电转换部分中的载流子放电到OFD区域的载流子放电控制部分，并且在光电转换部分和第一载流子保持部分之间具有载流子路径，其中固态成像装置还包括第二载体保持部分，当从光电转换部分的输出节点观察时，通过第一传送单元并联地与第一载体部分电连接，从而平滑电影成像而不引起不连续帧，同时抑制噪声混合到电荷载体保持部分的产生。

4. 发明授权

US08625010B2 Solid-state imaging apparatus with each pixel including a photoelectric converter portion and plural holding portions 有权
标题翻译：每个像素包括光电转换器部分和多个保持部分的固态成像装置
公开(公告)号：US08625010B2
公开(公告)日：2014-01-07
申请号：US12933471
申请日：2009-04-30
申请人： Yuichiro Yamashita , Masahiro Kobayashi , Takanori Watanabe , Shinsuke Kojima , Takeshi Ichikawa , Yusuke Onuki
发明人： Yuichiro Yamashita , Masahiro Kobayashi , Takanori Watanabe , Shinsuke Kojima , Takeshi Ichikawa , Yusuke Onuki
IPC分类号： H04N5/335
CPC分类号： H04N5/378 , H01L27/14603 , H01L27/14609 , H01L27/14641 , H01L27/14643 , H04N5/359 , H04N5/37452 , H04N5/37457
摘要： A solid-state imaging apparatus including a plurality of pixels each including: a first holding portion for holding signal carriers from a photoelectric conversion portion; an amplifying portion for amplifying and reading a signal based on the signal carriers generated in the photoelectric conversion portion; and a carrier discharging control portion for discharging charge carriers in the photoelectric conversion portion to an OFD region, and having a carrier path between the photoelectric conversion portion and the first carrier holding portion, in which the solid-state imaging apparatus further includes a second carrier holding portion electrically connected with the first carrier portion in parallel through a first transfer unit, when viewed from an output node of the photoelectric conversion portion, thereby smoothing an movie imaging without causing discontinuous frame while suppressing generation of noise mixing into the charge carrier holding portion.
摘要翻译：一种固态成像装置，包括多个像素，每个像素包括：第一保持部分，用于保持来自光电转换部分的信号载流子; 放大部分，用于基于在光电转换部分中产生的信号载波放大和读取信号; 以及用于将光电转换部分中的载流子放电到OFD区域的载流子放电控制部分，并且在光电转换部分和第一载流子保持部分之间具有载流子路径，其中固态成像装置还包括第二载体保持部分，当从光电转换部分的输出节点观察时，通过第一传送单元并联地与第一载体部分电连接，从而平滑电影成像而不引起不连续帧，同时抑制噪声混合到电荷载体保持部分的产生。

5. 发明申请

US20110240835A1 PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING METHOD THEREOF, AND CAMERA 有权
标题翻译：光电转换装置的制造方法及相机
公开(公告)号：US20110240835A1
公开(公告)日：2011-10-06
申请号：US13139588
申请日：2010-01-08
申请人： Tadashi Sawayama , Katsunori Hirota , Takanori Watanabe , Takeshi Ichikawa
发明人： Tadashi Sawayama , Katsunori Hirota , Takanori Watanabe , Takeshi Ichikawa
IPC分类号： H01L27/14 , H01L31/02
CPC分类号： H01L27/14689 , H01L27/1463 , H01L27/1464 , H01L27/14641 , H01L27/14643
摘要： A photoelectric conversion device comprises an n-type surface region, a p-type region which is formed under the surface region, and an n-type buried layer which is formed under the p-type region, wherein the surface region, the p-type region, and the buried layer form a buried photodiode, and a diffusion coefficient of a dominant impurity of the surface region is smaller than a diffusion coefficient of a dominant impurity of the buried layer.
摘要翻译：光电转换装置包括n型表面区域，形成在表面区域下方的p型区域和形成在p型区域下面的n型掩埋层，其中，表面区域，p-型区域，并且掩埋层形成掩埋光电二极管，并且表面区域的主要杂质的扩散系数小于掩埋层的主要杂质的扩散系数。

6. 发明授权

US08723285B2 Photoelectric conversion device manufacturing method thereof, and camera 有权
标题翻译：光电转换装置的制造方法以及相机
公开(公告)号：US08723285B2
公开(公告)日：2014-05-13
申请号：US13139588
申请日：2010-01-08
申请人： Tadashi Sawayama , Katsunori Hirota , Takanori Watanabe , Takeshi Ichikawa
发明人： Tadashi Sawayama , Katsunori Hirota , Takanori Watanabe , Takeshi Ichikawa
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L27/14689 , H01L27/1463 , H01L27/1464 , H01L27/14641 , H01L27/14643
摘要： A photoelectric conversion device comprises an n-type surface region, a p-type region which is formed under the surface region, and an n-type buried layer which is formed under the p-type region, wherein the surface region, the p-type region, and the buried layer form a buried photodiode, and a diffusion coefficient of a dominant impurity of the surface region is smaller than a diffusion coefficient of a dominant impurity of the buried layer.
摘要翻译：光电转换装置包括n型表面区域，形成在表面区域下方的p型区域和形成在p型区域下面的n型掩埋层，其中，表面区域，p-型区域，并且掩埋层形成掩埋光电二极管，并且表面区域的主要杂质的扩散系数小于掩埋层的主要杂质的扩散系数。

7. 发明申请

US20110242388A1 IMAGE SENSING DEVICE AND CAMERA 有权
标题翻译：图像传感装置和摄像机
公开(公告)号：US20110242388A1
公开(公告)日：2011-10-06
申请号：US13139558
申请日：2010-01-20
申请人： Takanori Watanabe , Mineo Shimotsusa , Takeshi Ichikawa , Hajime Ikeda , Yasuhiro Sekine , Akira Ohtani , Takeshi Kojima
发明人： Takanori Watanabe , Mineo Shimotsusa , Takeshi Ichikawa , Hajime Ikeda , Yasuhiro Sekine , Akira Ohtani , Takeshi Kojima
IPC分类号： H04N5/335 , H01L27/146
CPC分类号： H01L27/1463 , H01L27/14609 , H01L27/1464 , H01L27/14641 , H01L27/14689 , H01L29/7833
摘要： An image sensing device comprises a pixel array, and a peripheral circuit, a column selecting circuit, and a readout, wherein each pixel includes a photodiode, a floating diffusion, a transfer PMOS transistor to the floating diffusion, an amplifier PMOS transistor, and a reset PMOS transistor, the amplifier PMOS transistor has a gate which is formed by an n-type conductive pattern, and is isolated by a first element isolation region and an n-type impurity region which covers at least a lower portion of the first element isolation region, and each PMOS transistor included in the column selecting circuit has a gate which is formed by a p-type conductive pattern and is isolated by a second element isolation region, and an n-type impurity concentration in a region adjacent to a lower portion of the second element isolation region is lower than that in the n-type impurity region.
摘要翻译：图像感测装置包括像素阵列，外围电路，列选择电路和读出器，其中每个像素包括光电二极管，浮动扩散，到浮动扩散的转移PMOS晶体管，放大器PMOS晶体管和复位PMOS晶体管，放大器PMOS晶体管具有由n型导电图案形成的栅极，并且被第一元件隔离区域和覆盖至少第一元件隔离的下部的n型杂质区隔离区域，并且列选择电路中包括的每个PMOS晶体管具有由p型导电图案形成并由第二元件隔离区域隔离的栅极，并且与下部分相邻的区域中的n型杂质浓度的第二元件隔离区域低于n型杂质区域。

8. 发明申请

US20100203670A1 SEMICONDUCTOR DEVICE FABRICATION METHOD 有权
标题翻译：半导体器件制造方法
公开(公告)号：US20100203670A1
公开(公告)日：2010-08-12
申请号：US12692804
申请日：2010-01-25
申请人： Akira Ohtani , Takanori Watanabe , Takeshi Ichikawa
发明人： Akira Ohtani , Takanori Watanabe , Takeshi Ichikawa
IPC分类号： H01L21/768
CPC分类号： H01L21/76895 , H01L27/14643 , H01L27/14689
摘要： A method of fabricating a semiconductor device, comprises steps of forming a common contact hole for a first conductivity-type region and a second conductivity-type region, implanting an impurity in at least one of the first conductivity-type region and the second conductivity-type region, and forming a shared contact plug by filling an electrical conducting material in the contact hole, wherein in the implanting step, an impurity is implanted in at least one of the first conductivity-type region and the second conductivity-type region such that the first conductivity-type region and the shared contact plug are brought into ohmic contact with each other, and the second conductivity-type region and the shared contact plug are brought into ohmic contact with each other.
摘要翻译：一种制造半导体器件的方法，包括以下步骤：形成用于第一导电类型区域和第二导电类型区域的公共接触孔，在第一导电类型区域和第二导电类型区域中的至少一个中注入杂质，并且通过在所述接触孔中填充导电材料形成共用接触插塞，其中在所述注入步骤中，在所述第一导电类型区域和所述第二导电类型区域中的至少一个中注入杂质，使得第一导电型区域和共用接触插塞彼此进行欧姆接触，并且第二导电类型区域和共用接触插塞彼此进行欧姆接触。

9. 发明授权

US08482646B2 Image sensing device and camera 有权
标题翻译：影像传感装置及相机
公开(公告)号：US08482646B2
公开(公告)日：2013-07-09
申请号：US13139558
申请日：2010-01-20
申请人： Takanori Watanabe , Mineo Shimotsusa , Takeshi Ichikawa , Hajime Ikeda , Yasuhiro Sekine , Akira Ohtani , Takeshi Kojima
发明人： Takanori Watanabe , Mineo Shimotsusa , Takeshi Ichikawa , Hajime Ikeda , Yasuhiro Sekine , Akira Ohtani , Takeshi Kojima
IPC分类号： H04N3/14 , H04N5/335 , C12Q1/68 , H01J40/00 , H01L29/04 , H01L29/10 , H01L31/00
CPC分类号： H01L27/1463 , H01L27/14609 , H01L27/1464 , H01L27/14641 , H01L27/14689 , H01L29/7833
摘要： An image sensing device comprises a pixel array, and a peripheral circuit, a column selecting circuit, and a readout, wherein each pixel includes a photodiode, a floating diffusion, a transfer PMOS transistor to the floating diffusion, an amplifier PMOS transistor, and a reset PMOS transistor, the amplifier PMOS transistor has a gate which is formed by an n-type conductive pattern, and is isolated by a first element isolation region and an n-type impurity region which covers at least a lower portion of the first element isolation region, and each PMOS transistor included in the column selecting circuit has a gate which is formed by a p-type conductive pattern and is isolated by a second element isolation region, and an n-type impurity concentration in a region adjacent to a lower portion of the second element isolation region is lower than that in the n-type impurity region.
摘要翻译：图像感测装置包括像素阵列，外围电路，列选择电路和读出器，其中每个像素包括光电二极管，浮动扩散，到浮动扩散的转移PMOS晶体管，放大器PMOS晶体管和复位PMOS晶体管，放大器PMOS晶体管具有由n型导电图案形成的栅极，并且被第一元件隔离区域和覆盖至少第一元件隔离的下部的n型杂质区隔离区域，并且列选择电路中包括的每个PMOS晶体管具有由p型导电图案形成并由第二元件隔离区域隔离的栅极，并且与下部分相邻的区域中的n型杂质浓度的第二元件隔离区域低于n型杂质区域。

10. 发明授权

US08053272B2 Semiconductor device fabrication method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US08053272B2
公开(公告)日：2011-11-08
申请号：US12692804
申请日：2010-01-25
申请人： Akira Ohtani , Takanori Watanabe , Takeshi Ichikawa
发明人： Akira Ohtani , Takanori Watanabe , Takeshi Ichikawa
IPC分类号： H01L21/00
CPC分类号： H01L21/76895 , H01L27/14643 , H01L27/14689
摘要： A method of fabricating a semiconductor device, comprises steps of forming a common contact hole for a first conductivity-type region and a second conductivity-type region, implanting an impurity in at least one of the first conductivity-type region and the second conductivity-type region, and forming a shared contact plug by filling an electrical conducting material in the contact hole, wherein in the implanting step, an impurity is implanted in at least one of the first conductivity-type region and the second conductivity-type region such that the first conductivity-type region and the shared contact plug are brought into ohmic contact with each other, and the second conductivity-type region and the shared contact plug are brought into ohmic contact with each other.
摘要翻译：一种制造半导体器件的方法，包括以下步骤：形成用于第一导电类型区域和第二导电类型区域的公共接触孔，在第一导电类型区域和第二导电类型区域中的至少一个中注入杂质，并且通过在所述接触孔中填充导电材料形成共用接触插塞，其中在所述注入步骤中，在所述第一导电类型区域和所述第二导电类型区域中的至少一个中注入杂质，使得第一导电型区域和共用接触插塞彼此进行欧姆接触，并且第二导电类型区域和共用接触插塞彼此进行欧姆接触。

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