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    • 1. 发明授权
    • On-chip voltage regulator using feedback on process/product parameters
    • 片上电压调节器,使用过程/产品参数反馈
    • US07170308B1
    • 2007-01-30
    • US10628711
    • 2003-07-28
    • Irfan RahimPeter McElhenyJohn Costello
    • Irfan RahimPeter McElhenyJohn Costello
    • G01R31/00G01R31/28G05F1/00
    • G11C5/147H03K19/177
    • The present invention optimizes the performance of integrated circuits by adjusting the circuit operating voltage using feedback on process/product parameters. To determine a desired value for the operating voltage of an integrated circuit, a preferred embodiment provides for on-wafer probing of one or more reference circuit structures to measure at least one electrical or operational parameter of the one or more reference circuit structures; determining an adjusted value for the operating voltage based on the measured parameter; and establishing the adjusted value as the desired value for the operating voltage. The reference circuit structures may comprise process control monitor structures or structures in other integrated circuits fabricated in the same production run. In an alternative embodiment, the one or more parameters are directly measured from the integrated circuit whose operating voltage is being adjusted.
    • 本发明通过使用对过程/产品参数的反馈来调节电路工作电压来优化集成电路的性能。 为了确定集成电路的工作电压的期望值,优选实施例提供一个或多个参考电路结构的片上探测,以测量一个或多个参考电路结构的至少一个电或操作参数; 基于所测量的参数确定所述工作电压的调整值; 并将调整后的值建立为工作电压的期望值。 参考电路结构可以包括在相同生产运行中制造的其它集成电路中的过程控制监视器结构或结构。 在替代实施例中,一个或多个参数是直接从其工作电压正被调整的集成电路测量的。
    • 2. 发明授权
    • On-chip voltage regulator using feedback on process/product parameters
    • 片上电压调节器,使用过程/产品参数反馈
    • US07639033B2
    • 2009-12-29
    • US11638846
    • 2006-12-13
    • Irfan RahimPeter McElhenyJohn Costello
    • Irfan RahimPeter McElhenyJohn Costello
    • G01R31/00G01R31/28
    • G11C5/147H03K19/177
    • The present invention optimizes the performance of integrated circuits by adjusting the circuit operating voltage using feedback on process/product parameters. To determine a desired value for the operating voltage of an integrated circuit, a preferred embodiment provides for on-wafer probing of one or more reference circuit structures to measure at least one electrical or operational parameter of the one or more reference circuit structures; determining an adjusted value for the operating voltage based on the measured parameter; and establishing the adjusted value as the desired value for the operating voltage. The reference circuit structures may comprise process control monitor structures or structures in other integrated circuits fabricated in the same production run. In an alternative embodiment, the one or more parameters are directly measured from the integrated circuit whose operating voltage is being adjusted.
    • 本发明通过使用对过程/产品参数的反馈来调节电路工作电压来优化集成电路的性能。 为了确定集成电路的工作电压的期望值,优选实施例提供一个或多个参考电路结构的片上探测,以测量一个或多个参考电路结构的至少一个电或操作参数; 基于所测量的参数确定所述工作电压的调整值; 并将调整后的值建立为工作电压的期望值。 参考电路结构可以包括在相同生产运行中制造的其它集成电路中的过程控制监视器结构或结构。 在替代实施例中,一个或多个参数是直接从其工作电压正被调整的集成电路测量的。
    • 3. 发明申请
    • On-chip voltage regulator using feedback on process/product parameters
    • 片上电压调节器,使用过程/产品参数反馈
    • US20070085558A1
    • 2007-04-19
    • US11638846
    • 2006-12-13
    • Irfan RahimPeter McElhenyJohn Costello
    • Irfan RahimPeter McElhenyJohn Costello
    • G01R31/26
    • G11C5/147H03K19/177
    • The present invention optimizes the performance of integrated circuits by adjusting the circuit operating voltage using feedback on process/product parameters. To determine a desired value for the operating voltage of an integrated circuit, a preferred embodiment provides for on-wafer probing of one or more reference circuit structures to measure at least one electrical or operational parameter of the one or more reference circuit structures; determining an adjusted value for the operating voltage based on the measured parameter; and establishing the adjusted value as the desired value for the operating voltage. The reference circuit structures may comprise process control monitor structures or structures in other integrated circuits fabricated in the same production run. In an alternative embodiment, the one or more parameters are directly measured from the integrated circuit whose operating voltage is being adjusted
    • 本发明通过使用对过程/产品参数的反馈来调节电路工作电压来优化集成电路的性能。 为了确定集成电路的工作电压的期望值,优选实施例提供一个或多个参考电路结构的片上探测,以测量一个或多个参考电路结构的至少一个电或操作参数; 基于所测量的参数确定所述工作电压的调整值; 并将调整后的值建立为工作电压的期望值。 参考电路结构可以包括在相同生产运行中制造的其它集成电路中的过程控制监视器结构或结构。 在替代实施例中,一个或多个参数是直接从其工作电压正被调整的集成电路测量的
    • 4. 发明申请
    • APPLICATION CUSTOMIZATION THROUGH LINKED EMBEDDED AREAS
    • 通过连接的嵌入式领域进行应用定制
    • US20160110321A1
    • 2016-04-21
    • US14516923
    • 2014-10-17
    • Karol KaliszYuqian SongJohn CostelloPaul Sheedy
    • Karol KaliszYuqian SongJohn CostelloPaul Sheedy
    • G06F17/22H04L29/08
    • H04L67/02G06F16/9535G06F16/986H04L67/125H04L67/42
    • Examples of application customization through linked embedded areas are provided herein. Linked embedded areas can be used to customize an application in a way that allows both user customization and application provider application updates. In response to receiving a request to initiate an application, static content portions of the application can be accessed, and embedded areas of the application can be identified. Embedded areas are linked to content variants that include information representing content displayable in the embedded area. The content variant linked to the embedded area of the application can be retrieved, and a user-specific instance of the application can be generated. The user-specific instance includes the static content portions and the embedded area. The content displayed in the embedded area reflects the content variant.
    • 本文提供了通过链接嵌入区域进行应用定制的示例。 链接的嵌入式区域可用于以允许用户定制和应用程序提供程序应用程序更新的方式自定义应用程序。 响应于接收到发起应用的请求,可以访问应用的静态内容部分,并且可以识别应用的嵌入区域。 嵌入区域链接到内容变体,其中包括表示在嵌入区域中可显示的内容的信息。 可以检索链接到应用程序的嵌入区域的内容变体,并且可以生成应用程序的用户特定实例。 用户特定实例包括静态内容部分和嵌入区域。 嵌入区域中显示的内容反映内容变体。
    • 6. 发明申请
    • METHOD AND SYSTEM FOR CONTROLLING AUDIO IN A COLLABORATION ENVIRONMENT
    • 在协调环境中控制音频的方法和系统
    • US20110069643A1
    • 2011-03-24
    • US12564262
    • 2009-09-22
    • John H. YoakumTony McCormackJohn Costello
    • John H. YoakumTony McCormackJohn Costello
    • H04L12/16
    • H04L65/4015
    • A method and system for designating an aural position of an audio stream in a collaboration environment. A plurality of icons corresponding to participants are displayed in a user interface. A moderator may move the icons from a first position in the user interface to a second position in the user interface. Upon moving an icon from a first position to a second position, an aural position identifier corresponding to the second position is generated and sent to a conference processor. The conference processor uses the aural position identifier to generate an outgoing audio stream that aurally positions the audio stream generated by the participant corresponding to the icon at the aural position. The outgoing audio stream is provided to the moderator, who uses a multi-channel capable device to perceive the audio stream at the designated aural position.
    • 一种用于在协作环境中指定音频流的听觉位置的方法和系统。 与用户对应的多个图标显示在用户界面中。 主持人可以将图标从用户界面中的第一位置移动到用户界面中的第二位置。 在将图标从第一位置移动到第二位置时,生成与第二位置相对应的听觉位置识别符并将其发送到会议处理器。 会议处理器使用听觉位置标识符来产生输出音频流,其将由与该图标对应的参与者产生的音频流声音地定位在听觉位置。 输出音频流被提供给主持人,主持人使用多声道能力设备来感知指定听觉位置处的音频流。
    • 10. 发明授权
    • Input/output drivers
    • 输入/输出驱动器
    • US06369613B1
    • 2002-04-09
    • US09558537
    • 2000-04-26
    • John CostelloBehzad Nouban
    • John CostelloBehzad Nouban
    • H03K190175
    • H03K19/00315H03K19/018585
    • A technique is provided for improving the output drive capacity of output drivers on an integrated circuit that is configured to support I/O standards having operating voltages greater than the intrinsic core supply voltage. When MOS field-effect transistors are used in the I/O circuitry of such integrated circuits, the gate oxide layers of the transistors in the interface circuitry may need to be thicker than those comprising the core circuitry in order to tolerate I/O voltages that exceed the core supply voltage. In counteracting the degradation in output drive that may result from thickening the gate oxide layer, the pull-down signal applied to the gate of the pull-down transistor is preferably level-shifted from the core supply voltage to the higher external operating voltage associated with the I/O standard being supported. This external voltage is made available to the level-shifting circuit preferably through a spare pin or a gated I/O pin.
    • 提供了一种技术,用于提高集成电路中输出驱动器的输出驱动能力,该集成电路被配置为支持具有大于本征核心电源电压的工作电压的I / O标准。 当在这种集成电路的I / O电路中使用MOS场效应晶体管时,接口电路中的晶体管的栅极氧化物层可能需要比包含核心电路的晶体管的栅极氧化物层厚,以便容忍I / O电压 超过核心电源电压。 在抵消可能由栅极氧化物层增厚引起的输出驱动中的劣化时,施加到下拉晶体管的栅极的下拉信号优选地从芯供电电压电平移位到与 支持I / O标准。 该外部电压优选地通过备用引脚或门控I / O引脚可用于电平移位电路。