会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Data control unit capable of correcting boot errors, and corresponding self-correction method
    • 能够修正启动错误的数据控制单元及相应的自校正方法
    • US07444543B2
    • 2008-10-28
    • US11149948
    • 2005-06-09
    • Irene BabudriMarco RovedaRino Micheloni
    • Irene BabudriMarco RovedaRino Micheloni
    • G06F11/00
    • G06F11/1417G06F11/076
    • A boot method for a data control unit downloads boot information from a nonvolatile memory into a temporary buffer of a boot-activation unit. A processing unit is activated by the boot-activation unit; a boot code is executed by the processing unit; and an operating code is downloaded from the nonvolatile memory into a volatile memory through the boot-activation unit. To correct possible errors in the block of the nonvolatile memory containing information and boot codes, the boot-activation unit verifies whether the boot information downloaded into its volatile memory has a critical-error condition and activates a spare memory portion of the nonvolatile memory in presence of the critical-error condition.
    • 用于数据控制单元的引导方法将引导信息从非易失性存储器下载到引导启动单元的临时缓冲器中。 处理单元由启动激活单元激活; 由处理单元执行引导代码; 并且通过引导启动单元将操作代码从非易失性存储器下载到易失性存储器中。 为了纠正包含信息和引导代码的非易失性存储器的块中的可能错误,引导激活单元验证下载到其易失性存储器中的引导信息是否具有关键错误状况,并在存在时激活非易失性存储器的备用存储器部分 的关键错误条件。
    • 9. 发明申请
    • METHOD OF MANAGING FAILS IN A NON-VOLATILE MEMORY DEVICE AND RELATIVE MEMORY DEVICE
    • 在非易失性存储器件和相对存储器件中管理故障的方法
    • US20070109856A1
    • 2007-05-17
    • US11557786
    • 2006-11-08
    • Demetrio PelliconeAdamo CorsiMarco RovedaConcetta Di TuoroProcolo CarannanteGianfranco Ferrante
    • Demetrio PelliconeAdamo CorsiMarco RovedaConcetta Di TuoroProcolo CarannanteGianfranco Ferrante
    • G11C16/06
    • G11C29/76G11C29/006G11C2029/1208
    • A method of managing fails in a non-volatile memory device including an array of cells grouped in blocks of data storage cells includes defining in the array a first subset of user addressable blocks of cells, and a second subset of redundancy blocks of cells. Each block including at least one failed cell in the first subset is located during a test on wafer of the non-volatile memory device. Each block is marked as bad, and a bad block address table of respective codes is stored in a non-volatile memory buffer. At power-on, the bad block address table is copied from the non-volatile memory buffer to the random access memory. A block of memory cells of the first subset is verified as bad by looking up the bad block address table, and if a block is bad, then remapping access to a corresponding block of redundancy cells. A third subset of non-user addressable blocks of cells is defined in the array for storing the bad block address table of respective codes in an addressable page of cells of a block of the third subset. Each page of the third subset is associated to a corresponding redundancy block. If during the working life of the memory device a block of cells previously judged good in a test phase becomes failed, each block is marked as bad and the stored table in the random access memory is updated.
    • 在包括分组在数据存储单元块中的单元阵列的非易失性存储器件中的管理失败的方法包括在阵列中定义用户可寻址的单元块的第一子集以及单元的冗余块的第二子集。 在非易失性存储器件的晶片上的测试期间,包括第一子集中的至少一个故障单元的每个块被定位。 每个块被标记为坏,并且各个代码的坏块地址表存储在非易失性存储器缓冲器中。 在上电时,坏块地址表从非易失性存储器缓冲区复制到随机存取存储器。 通过查找坏块地址表来验证第一子集的存储器单元的块是坏的,并且如果块是坏的,则重新映射对相应的冗余单元块的访问。 在阵列中定义了非用户可寻址单元块的第三子集,用于存储第三子块的块的可寻址寻址页的各个代码的坏块地址表。 第三子集的每一页与相应的冗余块相关联。 如果在存储器件的工作寿命期间,在测试阶段中先前判断良好的一个单元的块变得失败,则每个块被标记为坏,并且随机存取存储器中存储的表被更新。