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1. 发明授权

US08900918B2 Graphene channel-based devices and methods for fabrication thereof 有权
标题翻译：石墨烯基通道器件及其制造方法
公开(公告)号：US08900918B2
公开(公告)日：2014-12-02
申请号：US13875675
申请日：2013-05-02
申请人： International Business Machines Corporation
发明人： Phaedon Avouris , Kuan-Neng Chen , Damon Farmer , Yu-Ming Lin
IPC分类号： H01L21/00 , H01L27/12 , H01L29/786 , H01L29/16 , H01L29/66 , H01L21/822 , H01L27/092 , B82Y10/00 , H01L21/50 , H01L29/778 , H01L29/775 , H01L27/06 , B82Y40/00
CPC分类号： H01L21/50 , B82Y10/00 , B82Y40/00 , H01L21/8221 , H01L27/0688 , H01L27/092 , H01L27/1207 , H01L29/1606 , H01L29/66742 , H01L29/775 , H01L29/7781 , H01L29/78618 , H01L29/78684 , H01L2924/0002 , H01L2924/00
摘要： Graphene-channel based devices and techniques for the fabrication thereof are provided. In one aspect, a semiconductor device includes a first wafer having at least one graphene channel formed on a first substrate, a first oxide layer surrounding the graphene channel and source and drain contacts to the graphene channel that extend through the first oxide layer; and a second wafer having a CMOS device layer formed in a second substrate, a second oxide layer surrounding the CMOS device layer and a plurality of contacts to the CMOS device layer that extend through the second oxide layer, the wafers being bonded together by way of an oxide-to-oxide bond between the oxide layers. One or more of the contacts to the CMOS device layer are in contact with the source and drain contacts. One or more other of the contacts to the CMOS device layer are gate contacts for the graphene channel.
摘要翻译：提供了基于石墨烯基通道的器件及其制造技术。在一个方面，一种半导体器件包括：第一晶片，其具有形成在第一衬底上的至少一个石墨烯通道;围绕石墨烯通道的第一氧化物层;延伸穿过第一氧化物层的石墨烯通道的源极和漏极接触; 以及第二晶片，其具有形成在第二基板中的CMOS器件层，围绕所述CMOS器件层的第二氧化物层和延伸穿过所述第二氧化物层的所述CMOS器件层的多个触点，所述晶片通过氧化物层之间的氧化物 - 氧化物键。与CMOS器件层的一个或多个触点与源极和漏极触点接触。 CMOS器件层的一个或多个其它触点是用于石墨烯通道的栅极触点。

2. 发明申请

US20140061901A1 Precise-Aligned Lock-And-Key Bonding Structures 审中-公开
标题翻译：精密锁定键键合结构
公开(公告)号：US20140061901A1
公开(公告)日：2014-03-06
申请号：US14075699
申请日：2013-11-08
申请人： International Business Machines Corporation
发明人： Kuan-Neng Chen , Fei Liu
IPC分类号： H01L23/00
CPC分类号： H01L24/81 , B23K20/02 , B23K2101/38 , B23K2103/12 , H01L24/03 , H01L24/14 , H01L2224/0401 , H01L2224/8114
摘要： Copper (Cu)-to-Cu bonding techniques are provided. In one aspect, a bonding method is provided. The method includes the following steps. A first bonding structure is provided having at least one copper pad embedded in a first insulator and at least one via in the first insulator over the copper pad, wherein the via has tapered sidewalls. A second bonding structure is provided having at least one copper stud embedded in a second insulator, wherein a portion of the copper stud is exposed for bonding and has a domed shape. The first bonding structure is bonded to the second bonding structure by way of a copper-to-copper bonding between the copper pad and the copper stud, wherein the via and the copper stud fit together like a lock-and-key. A bonded structure is also provided.
摘要翻译：提供了铜（Cu）与Cu的结合技术。一方面，提供了接合方法。该方法包括以下步骤。提供了第一接合结构，其具有嵌入在第一绝缘体中的至少一个铜焊盘和位于铜焊盘上的第一绝缘体中的至少一个通孔，其中该通孔具有锥形侧壁。提供了第二接合结构，其具有嵌入在第二绝缘体中的至少一个铜螺柱，其中铜螺柱的一部分露出用于接合并且具有圆顶形状。第一接合结构通过在铜焊盘和铜螺柱之间的铜 - 铜接合而结合到第二接合结构，其中通孔和铜螺柱像锁键一样安装在一起。还提供了粘合结构。

3. 发明授权

US08927087B2 Bonding of substrates including metal-dielectric patterns with metal raised above dielectric and structures so formed 有权
标题翻译：将金属 - 电介质图案与介电材料上升的金属和如此形成的结构粘合在一起
公开(公告)号：US08927087B2
公开(公告)日：2015-01-06
申请号：US14028974
申请日：2013-09-17
申请人： International Business Machines Corporation
发明人： Kuan-Neng Chen , Bruce K. Furman , Sampath Purushothaman , David L. Rath , Anna W. Topol , Cornelia K. Tsang
IPC分类号： B32B3/00 , B32B15/04 , B23K20/24 , H01L23/00 , B23K20/233 , B23K20/02
CPC分类号： H01L24/05 , B23K20/023 , B23K20/233 , B23K20/24 , B23K2101/42 , H01L24/03 , H01L24/08 , H01L24/12 , H01L24/80 , H01L2224/0381 , H01L2224/03845 , H01L2224/0401 , H01L2224/05571 , H01L2224/05572 , H01L2224/08147 , H01L2224/08148 , H01L2224/80203 , H01L2224/80345 , H01L2224/80895 , H01L2224/80896 , H01L2224/80948 , H01L2224/80986 , H01L2924/14 , H01L2924/1461 , Y10T428/24479 , Y10T428/24521 , Y10T428/24545 , Y10T428/24612 , Y10T428/31678 , H01L2924/00012 , H01L2924/0001 , H01L2924/00
摘要： Bonding of substrates including metal-dielectric patterns on a surface with the metal raised above the dielectric, as well as related structures, are disclosed. One structure includes: a first substrate having a metal-dielectric pattern on a surface thereof, the metal-dielectric pattern including: a metal having a concave upper surface; and a dielectric having a substantially uniform upper surface, wherein the metal on the first substrate is raised above the dielectric on the first substrate; and a second substrate bonded with the first substrate, the second substrate including: a dielectric; and a metal positioned substantially below the dielectric of the second substrate, wherein the first substrate and the second substrate are bonded only at the metal from the first substrate and the metal from the second substrate.
摘要翻译：公开了包括金属电介质图案在表面上与在电介质上方凸起的金属以及相关结构的接合。一种结构包括：在其表面上具有金属 - 电介质图案的第一基板，所述金属 - 电介质图案包括：具有凹的上表面的金属; 以及具有基本上均匀的上表面的电介质，其中所述第一衬底上的金属在所述第一衬底上的电介质上方升高; 以及与所述第一基板接合的第二基板，所述第二基板包括：电介质; 以及大体位于所述第二基板的电介质下方的金属，其中所述第一基板和所述第二基板仅在所述金属处与所述第一基板接合，所述金属与所述第二基板接合。

4. 发明申请

US20130240839A1 Graphene Channel-Based Devices and Methods for Fabrication Thereof 有权
公开(公告)号：US20130240839A1
公开(公告)日：2013-09-19
申请号：US13875642
申请日：2013-05-02
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Phaedon Avouris , Kuan-Neng Chen , Damon Farmer , Yu-Ming Lin
IPC分类号： H01L27/092
CPC分类号： H01L21/50 , B82Y10/00 , B82Y40/00 , H01L21/8221 , H01L27/0688 , H01L27/092 , H01L27/1207 , H01L29/1606 , H01L29/66742 , H01L29/775 , H01L29/7781 , H01L29/78618 , H01L29/78684 , H01L2924/0002 , H01L2924/00
摘要： Graphene-channel based devices and techniques for the fabrication thereof are provided. In one aspect, a semiconductor device includes a first wafer having at least one graphene channel formed on a first substrate, a first oxide layer surrounding the graphene channel and source and drain contacts to the graphene channel that extend through the first oxide layer; and a second wafer having a CMOS device layer formed in a second substrate, a second oxide layer surrounding the CMOS device layer and a plurality of contacts to the CMOS device layer that extend through the second oxide layer, the wafers being bonded together by way of an oxide-to-oxide bond between the oxide layers. One or more of the contacts to the CMOS device layer are in contact with the source and drain contacts. One or more other of the contacts to the CMOS device layer are gate contacts for the graphene channel.

5. 发明授权

US08878193B2 Graphene channel-based devices and methods for fabrication thereof 有权
公开(公告)号：US08878193B2
公开(公告)日：2014-11-04
申请号：US13875715
申请日：2013-05-02
申请人： International Business Machines Corporation
发明人： Phaedon Avouris , Kuan-Neng Chen , Damon Farmer , Yu-Ming Lin
IPC分类号： H01L29/15 , H01L29/16 , H01L29/778 , B82Y10/00 , H01L29/66 , H01L21/822 , H01L29/786 , H01L29/775 , H01L27/06 , H01L27/12 , H01L27/092 , H01L21/50 , B82Y40/00
CPC分类号： H01L21/50 , B82Y10/00 , B82Y40/00 , H01L21/8221 , H01L27/0688 , H01L27/092 , H01L27/1207 , H01L29/1606 , H01L29/66742 , H01L29/775 , H01L29/7781 , H01L29/78618 , H01L29/78684 , H01L2924/0002 , H01L2924/00
摘要： Graphene-channel based devices and techniques for the fabrication thereof are provided. In one aspect, a semiconductor device includes a first wafer having at least one graphene channel formed on a first substrate, a first oxide layer surrounding the graphene channel and source and drain contacts to the graphene channel that extend through the first oxide layer; and a second wafer having a CMOS device layer formed in a second substrate, a second oxide layer surrounding the CMOS device layer and a plurality of contacts to the CMOS device layer that extend through the second oxide layer, the wafers being bonded together by way of an oxide-to-oxide bond between the oxide layers. One or more of the contacts to the CMOS device layer are in contact with the source and drain contacts. One or more other of the contacts to the CMOS device layer are gate contacts for the graphene channel.

6. 发明授权

US08698165B2 Graphene channel-based devices and methods for fabrication thereof 有权
公开(公告)号：US08698165B2
公开(公告)日：2014-04-15
申请号：US13875642
申请日：2013-05-02
申请人： International Business Machines Corporation
发明人： Phaedon Avouris , Kuan-Neng Chen , Damon Farmer , Yu-Ming Lin
IPC分类号： H01L29/15
CPC分类号： H01L21/50 , B82Y10/00 , B82Y40/00 , H01L21/8221 , H01L27/0688 , H01L27/092 , H01L27/1207 , H01L29/1606 , H01L29/66742 , H01L29/775 , H01L29/7781 , H01L29/78618 , H01L29/78684 , H01L2924/0002 , H01L2924/00
摘要： Graphene-channel based devices and techniques for the fabrication thereof are provided. In one aspect, a semiconductor device includes a first wafer having at least one graphene channel formed on a first substrate, a first oxide layer surrounding the graphene channel and source and drain contacts to the graphene channel that extend through the first oxide layer; and a second wafer having a CMOS device layer formed in a second substrate, a second oxide layer surrounding the CMOS device layer and a plurality of contacts to the CMOS device layer that extend through the second oxide layer, the wafers being bonded together by way of an oxide-to-oxide bond between the oxide layers. One or more of the contacts to the CMOS device layer are in contact with the source and drain contacts. One or more other of the contacts to the CMOS device layer are gate contacts for the graphene channel.

7. 发明申请

US20140097543A1 BONDING OF SUBSTRATES INCLUDING METAL-DIELECTRIC PATTERNS WITH METAL RAISED ABOVE DIELECTRIC AND STRUCTURES SO FORMED 有权
标题翻译：包括金属介电模式在内的金属与电介质结构的结合，形成结构
公开(公告)号：US20140097543A1
公开(公告)日：2014-04-10
申请号：US14028974
申请日：2013-09-17
申请人： International Business Machines Corporation
发明人： Kuan-Neng Chen , Bruce K. Furman , Sampath Purushothaman , David L. Rath , Anna W. Topol , Cornelia K. Tsang
IPC分类号： H01L23/00
CPC分类号： H01L24/05 , B23K20/023 , B23K20/233 , B23K20/24 , B23K2101/42 , H01L24/03 , H01L24/08 , H01L24/12 , H01L24/80 , H01L2224/0381 , H01L2224/03845 , H01L2224/0401 , H01L2224/05571 , H01L2224/05572 , H01L2224/08147 , H01L2224/08148 , H01L2224/80203 , H01L2224/80345 , H01L2224/80895 , H01L2224/80896 , H01L2224/80948 , H01L2224/80986 , H01L2924/14 , H01L2924/1461 , Y10T428/24479 , Y10T428/24521 , Y10T428/24545 , Y10T428/24612 , Y10T428/31678 , H01L2924/00012 , H01L2924/0001 , H01L2924/00
摘要： Bonding of substrates including metal-dielectric patterns on a surface with the metal raised above the dielectric, as well as related structures, are disclosed. One structure includes: a first substrate having a metal-dielectric pattern on a surface thereof, the metal-dielectric pattern including: a metal having a concave upper surface; and a dielectric having a substantially uniform upper surface, wherein the metal on the first substrate is raised above the dielectric on the first substrate; and a second substrate bonded with the first substrate, the second substrate including: a dielectric; and a metal positioned substantially below the dielectric of the second substrate, wherein the first substrate and the second substrate are bonded only at the metal from the first substrate and the metal from the second substrate.
摘要翻译：公开了包括金属电介质图案在表面上与在电介质上方凸起的金属以及相关结构的接合。一种结构包括：在其表面上具有金属 - 电介质图案的第一基板，所述金属 - 电介质图案包括：具有凹的上表面的金属; 以及具有基本上均匀的上表面的电介质，其中所述第一衬底上的金属在所述第一衬底上的电介质上方升高; 以及与所述第一基板接合的第二基板，所述第二基板包括：电介质; 以及大体位于所述第二基板的电介质下方的金属，其中所述第一基板和所述第二基板仅在所述金属处与所述第一基板接合，所述金属与所述第二基板接合。

8. 发明申请

US20130302940A1 Graphene Channel-Based Devices and Methods for Fabrication Thereof 有权
公开(公告)号：US20130302940A1
公开(公告)日：2013-11-14
申请号：US13875675
申请日：2013-05-02
申请人： International Business Machines Corporation
发明人： Phaedon Avouris , Kuan-Neng Chen , Damon Farmer , Yu-Ming Lin
IPC分类号： H01L21/50
CPC分类号： H01L21/50 , B82Y10/00 , B82Y40/00 , H01L21/8221 , H01L27/0688 , H01L27/092 , H01L27/1207 , H01L29/1606 , H01L29/66742 , H01L29/775 , H01L29/7781 , H01L29/78618 , H01L29/78684 , H01L2924/0002 , H01L2924/00
摘要： Graphene-channel based devices and techniques for the fabrication thereof are provided. In one aspect, a semiconductor device includes a first wafer having at least one graphene channel formed on a first substrate, a first oxide layer surrounding the graphene channel and source and drain contacts to the graphene channel that extend through the first oxide layer; and a second wafer having a CMOS device layer formed in a second substrate, a second oxide layer surrounding the CMOS device layer and a plurality of contacts to the CMOS device layer that extend through the second oxide layer, the wafers being bonded together by way of an oxide-to-oxide bond between the oxide layers. One or more of the contacts to the CMOS device layer are in contact with the source and drain contacts. One or more other of the contacts to the CMOS device layer are gate contacts for the graphene channel.

9. 发明申请

US20130234114A1 Graphene Channel-Based Devices and Methods for Fabrication Thereof 有权
标题翻译：石墨烯基通道设备及其制造方法
公开(公告)号：US20130234114A1
公开(公告)日：2013-09-12
申请号：US13875715
申请日：2013-05-02
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Phaedon Avouris , Kuan-Neng Chen , Damon Farmer , Yu-Ming Lin
IPC分类号： H01L29/775
CPC分类号： H01L21/50 , B82Y10/00 , B82Y40/00 , H01L21/8221 , H01L27/0688 , H01L27/092 , H01L27/1207 , H01L29/1606 , H01L29/66742 , H01L29/775 , H01L29/7781 , H01L29/78618 , H01L29/78684 , H01L2924/0002 , H01L2924/00
摘要： Graphene-channel based devices and techniques for the fabrication thereof are provided. In one aspect, a semiconductor device includes a first wafer having at least one graphene channel formed on a first substrate, a first oxide layer surrounding the graphene channel and source and drain contacts to the graphene channel that extend through the first oxide layer; and a second wafer having a CMOS device layer formed in a second substrate, a second oxide layer surrounding the CMOS device layer and a plurality of contacts to the CMOS device layer that extend through the second oxide layer, the wafers being bonded together by way of an oxide-to-oxide bond between the oxide layers. One or more of the contacts to the CMOS device layer are in contact with the source and drain contacts. One or more other of the contacts to the CMOS device layer are gate contacts for the graphene channel.
摘要翻译：提供了基于石墨烯基通道的器件及其制造技术。在一个方面，半导体器件包括：第一晶片，其具有形成在第一衬底上的至少一个石墨烯通道;围绕石墨烯通道的第一氧化物层;延伸穿过第一氧化物层的石墨烯通道的源极和漏极接触; 以及第二晶片，其具有形成在第二基板中的CMOS器件层，围绕所述CMOS器件层的第二氧化物层和延伸穿过所述第二氧化物层的所述CMOS器件层的多个触点，所述晶片通过氧化物层之间的氧化物 - 氧化物键。与CMOS器件层的一个或多个触点与源极和漏极触点接触。 CMOS器件层的一个或多个其它触点是用于石墨烯通道的栅极触点。

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