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1. 发明申请

US20180190693A1 ARRAY OF OPTOELECTRONIC STRUCTURES AND FABRICATION THEREOF 审中-公开
公开(公告)号：US20180190693A1
公开(公告)日：2018-07-05
申请号：US15906316
申请日：2018-02-27
申请人： International Business Machines Corporation
发明人： Mattias B. Borg , Lukas Czornomaz , Veeresh V. Deshpande , Vladimir Djara , Heike E. Riel , Heinz Schmid
IPC分类号： H01L27/146 , H01S5/40 , H01S5/30 , H01S5/026 , H01S5/02 , H01L31/0304 , H01L27/148 , H01L31/12
CPC分类号： H01L27/1469 , H01L27/14636 , H01L27/1465 , H01L27/14694 , H01L27/14881 , H01L31/03046 , H01L31/12 , H01S5/021 , H01S5/0262 , H01S5/3013 , H01S5/4025
摘要： A method of fabrication of an array of optoelectronic structures includes first providing a crystalline substrate having cells corresponding to individual optoelectronic structures to be obtained. Each of the cells includes an opening to the substrate. Then, several first layer portions of a first compound semiconductor material are grown in each the opening to at least partly fill a respective one of the cells and form an essentially planar film portion therein. Next, several second layer portions of a second compound semiconductor material are grown over the first layer portions that coalesce to form a coalescent film extending over the first layer portions. Finally, excess portions of materials are removed, to obtain the array of optoelectronic structures. Each optoelectronic structure comprises a stack protruding from the substrate of: a residual portion of one of the second layer portions; and a residual portion of one of the first layer portions.

2. 发明授权

US09947853B2 Thermoelectric device 有权
公开(公告)号：US09947853B2
公开(公告)日：2018-04-17
申请号：US14496729
申请日：2014-09-25
申请人： International Business Machines Corporation
发明人： Heike E. Riel , Volker Schmidt
IPC分类号： H01L35/32
CPC分类号： H01L35/32
摘要： A thermoelectric device for transferring heat from a heat source to a heat sink includes at least one thermoelectric leg pair having a first leg including an n-type semiconductor material and a second leg including a p-type semiconductor material. The first leg and the second leg are electrically coupled in series. A resistive element electrically couples the first leg and the second leg between the heat source and the heat sink.

3. 发明授权

US09823414B2 Method for fabricating a semiconductor device for use in an optical application 有权
公开(公告)号：US09823414B2
公开(公告)日：2017-11-21
申请号：US15178913
申请日：2016-06-10
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Lukas Czornomaz , Jens Hofrichter , Mirja Richter , Heike E. Riel
IPC分类号： H01L21/00 , G02B6/122 , G02B6/12 , H01S5/00 , G02B6/124 , G02B6/136 , G02B6/42 , H01L31/18 , H01L33/00 , H01S5/183 , H01S5/10 , H01S5/026
CPC分类号： G02B6/1225 , G02B6/12004 , G02B6/1228 , G02B6/124 , G02B6/136 , G02B6/42 , G02B2006/12107 , G02B2006/12197 , H01L31/18 , H01L33/005 , H01S5/00 , H01S5/026 , H01S5/1032 , H01S5/105 , H01S5/183
摘要： A semiconductor device for use in an optical application and a method for fabricating the device. The device includes: an optically passive aspect that is operable in a substantially optically passive mode; and an optically active material having a material that is operable in a substantially optically active mode, wherein the optically passive aspect is patterned to include a photonic structure with a predefined structure, and the optically active material is formed in the predefined structure so as to be substantially self-aligned in a lateral plane with the optically passive aspect.

4. 发明申请

US20160291249A1 METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE FOR USE IN AN OPTICAL APPLICATION 有权
标题翻译：用于制造用于光学应用的半导体器件的方法
公开(公告)号：US20160291249A1
公开(公告)日：2016-10-06
申请号：US15178913
申请日：2016-06-10
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Lukas Czornomaz , Jens Hofrichter , Mirja Richter , Heike E. Riel
IPC分类号： G02B6/122 , G02B6/136 , H01S5/183
CPC分类号： G02B6/1225 , G02B6/12004 , G02B6/1228 , G02B6/124 , G02B6/136 , G02B6/42 , G02B2006/12107 , G02B2006/12197 , H01L31/18 , H01L33/005 , H01S5/00 , H01S5/026 , H01S5/1032 , H01S5/105 , H01S5/183
摘要： A semiconductor device for use in an optical application and a method for fabricating the device. The device includes: an optically passive aspect that is operable in a substantially optically passive mode; and an optically active material having a material that is operable in a substantially optically active mode, wherein the optically passive aspect is patterned to include a photonic structure with a predefined structure, and the optically active material is formed in the predefined structure so as to be substantially self-aligned in a lateral plane with the optically passive aspect.
摘要翻译：一种用于光学应用的半导体器件及其制造方法。该装置包括：可被实质上光学被动模式操作的光学被动方面; 以及具有可以基本上光学活动的模式操作的材料的光学活性材料，其中将所述光学被动形状图案化以包括具有预定结构的光子结构，并且所述光学活性材料以预定结构形成为在具有光学无源方面的横向平面中基本上自对准。

5. 发明授权

US10743104B1 Cognitive volume and speech frequency levels adjustment 有权
公开(公告)号：US10743104B1
公开(公告)日：2020-08-11
申请号：US16777178
申请日：2020-01-30
申请人： International Business Machines Corporation
发明人： Komminist Weldemariam , Abdigani Diriye , Michael S. Gordon , Heike E. Riel
IPC分类号： H04R3/04 , G10L15/183 , G10L15/06
摘要： A volume and speech frequency level adjustment method, system, and computer program product include learning a characteristic of at least one of audio volume and speech frequency from a conversation, detecting a contextual characteristic of an ongoing conversation and an interaction of a user with a device, determining a cognitive state of the user in relation to the ongoing conversation as a function of at least one of the contextual characteristic of the volume or the speech frequency, and a user interaction pattern with a conversation device, and dynamically adjusting audio levels of the ongoing conversation for the user based on the function.

6. 发明授权

US10411092B2 Fabrication of semiconductor junctions 有权
公开(公告)号：US10411092B2
公开(公告)日：2019-09-10
申请号：US15445145
申请日：2017-02-28
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Mattias B. Borg , Kirsten E. Moselund , Heike E. Riel , Heinz Schmid
IPC分类号： H01L29/06 , H01L21/02 , H01L29/66 , H01L29/78 , H01L21/306 , H01L31/0352 , H01L33/24
摘要： A method comprises providing a cavity structure on the substrate comprising a first growth channel extending in a first direction, a second growth channel extending in a second direction, wherein the second direction is different from the first direction and the second channel is connected to the first channel at a channel junction, a first seed surface in the first channel, at least one opening for supplying precursor materials to the cavity structure, selectively growing from the first seed surface a first semiconductor structure substantially only in the first direction and in the first channel, thereby forming a second seed surface for a second semiconductor structure at the channel junction, growing in the second channel the second semiconductor structure in the second direction from the second seed surface, thereby forming the semiconductor junction comprising the first and the second semiconductor structure.

7. 发明申请

US20180006069A1 ARRAY OF OPTOELECTRONIC STRUCTURES AND FABRICATION THEREOF 有权
公开(公告)号：US20180006069A1
公开(公告)日：2018-01-04
申请号：US15200753
申请日：2016-07-01
申请人： International Business Machines Corporation
发明人： Mattias B. Borg , Lukas Czornomaz , Veeresh V. Deshpande , Vladimir Djara , Heike E. Riel , Heinz Schmid
IPC分类号： H01L27/146 , H01S5/30 , H01L31/12 , H01S5/02 , H01L31/0304 , H01L27/148 , H01S5/40 , H01S5/026
CPC分类号： H01L27/1469 , H01L27/14636 , H01L27/1465 , H01L27/14694 , H01L27/14881 , H01L31/03046 , H01L31/12 , H01S5/021 , H01S5/0262 , H01S5/3013 , H01S5/4025
摘要： A method of fabrication of an array of optoelectronic structures. The method first provides a crystalline substrate having cells corresponding to individual optoelectronic structures to be obtained. Each of the cells comprises an opening to the substrate. Then, several first layer portions of a first compound semiconductor material are grown in each the opening to at least partly fill a respective one of the cells and form an essentially planar film portion therein. Next, several second layer portions of a second compound semiconductor material are grown over the first layer portions that coalesce to form a coalescent film extending over the first layer portions. Finally, excess portions of materials are removed, to obtain the array of optoelectronic structures. Each optoelectronic structure comprises a stack protruding from the substrate of: a residual portion of one of the second layer portions; and a residual portion of one of the first layer portions.

8. 发明授权

US09543492B2 Thermoelectric elements 有权
标题翻译：热电元件
公开(公告)号：US09543492B2
公开(公告)日：2017-01-10
申请号：US13966659
申请日：2013-08-14
申请人： International Business Machines Corporation
发明人： Bernd W. Gotsmann , Siegfried F. Karg , Heike E. Riel
IPC分类号： H01L35/32 , H01L35/28
CPC分类号： H01L35/28
摘要： A thermoelectric element includes a body formed of a single thermoelectric material and extending in a first direction along which a thermal gradient is established in thermoelectric operation, wherein the body has at least first and second adjacent sections in the first direction; at least one of the sections is subject to stress which is applied to that section substantially all around a central axis of the body in the first direction; and the arrangement is such that the stress results in different strain in the first and second sections producing an energy barrier in the body to enhance thermoelectric operation.
摘要翻译：热电元件包括由单个热电材料形成并在沿热电运行中建立热梯度的第一方向延伸的主体，其中主体在第一方向上具有至少第一和第二相邻部分; 所述部分中的至少一个受到应力，所述应力基本上全部围绕所述主体的沿所述第一方向的中心轴施加到所述部分; 并且这种布置使得应力导致第一和第二部分中的不同应变在体内产生能量障碍以增强热电运行。

9. 发明申请

US20170005251A1 THERMOELECTRIC DEVICE 审中-公开
标题翻译：热电装置
公开(公告)号：US20170005251A1
公开(公告)日：2017-01-05
申请号：US15104565
申请日：2014-12-08
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Heike E. Riel , Volker Schmidt
IPC分类号： H01L35/32 , H01L35/34 , H01L35/10
CPC分类号： H01L35/32 , H01L35/10 , H01L35/34
摘要： A thermoelectric device for transferring heat from a heat source to a heat sink. The device includes a first thermoelectric leg pair having a first leg including an n-type semiconductor material and a second leg including a p-type semiconductor material, wherein the first leg and the second leg are electrically coupled in series; a second thermoelectric leg pair has a third leg including an n-type semiconductor material and a fourth leg including a p-type semiconductor material, wherein the third leg and the fourth leg are electrically coupled in series; a first contact placed between the first leg and the fourth leg and a second contact placed between the second leg and the third leg. A method for manufacturing a thermoelectric device is also provided.
摘要翻译：一种用于将热量从热源传递到散热器的热电装置。该装置包括第一热电腿对，其具有包括n型半导体材料的第一支脚和包括p型半导体材料的第二支脚，其中第一支脚和第二支脚串联电耦合; 第二热电腿对具有包括n型半导体材料的第三腿和包括p型半导体材料的第四腿，其中第三腿和第四腿串联电耦合; 放置在第一腿部和第四腿部之间的第一接触件和放置在第二腿部和第三腿部之间的第二接触件。还提供了一种用于制造热电装置的方法。

10. 发明授权

US09245750B2 Nanowire devices 有权
公开(公告)号：US09245750B2
公开(公告)日：2016-01-26
申请号：US14596397
申请日：2015-01-14
申请人： International Business Machines Corporation
发明人： Bernd W. Gotsmann , Siegfried F. Karg , Heike E. Riel
IPC分类号： H01L29/06 , H01L21/02 , B82Y10/00 , H01L29/10 , H01L29/423 , H01L29/66 , H01L29/775 , H01L29/786 , B82Y40/00
CPC分类号： H01L21/02603 , B82Y10/00 , B82Y40/00 , H01L21/0262 , H01L21/02667 , H01L29/0669 , H01L29/0673 , H01L29/068 , H01L29/1054 , H01L29/42392 , H01L29/66439 , H01L29/66469 , H01L29/775 , H01L29/78687 , H01L29/78696
摘要： A method of forming nanowire devices. The method includes forming a stressor layer circumferentially surrounding a semiconductor nanowire. The method is performed such that, due to the stressor layer, the nanowire is subjected to at least one of radial and longitudinal strain to enhance carrier mobility in the nanowire. Radial and longitudinal strain components can be used separately or together and can each be made tensile or compressive, allowing formulation of desired strain characteristics for enhanced conductivity in the nanowire of a given device.

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