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1. 发明申请

US20160126201A1 DUAL LAYER STACK FOR CONTACT FORMATION 有权
标题翻译：双层堆叠联系形成
公开(公告)号：US20160126201A1
公开(公告)日：2016-05-05
申请号：US14532764
申请日：2014-11-04
申请人： International Business Machines Corporation
发明人： Charles L. Arvin , Harry D. Cox , Brian M. Erwin , Sarah H. Knickerbocker , Karen P. McLaughlin , David J. Russell
IPC分类号： H01L23/00
CPC分类号： H01L24/11 , H01L24/03 , H01L24/05 , H01L24/13 , H01L24/16 , H01L24/81 , H01L24/94 , H01L2224/0345 , H01L2224/0361 , H01L2224/03612 , H01L2224/03614 , H01L2224/0381 , H01L2224/03912 , H01L2224/05147 , H01L2224/05166 , H01L2224/05647 , H01L2224/05655 , H01L2224/11462 , H01L2224/1147 , H01L2224/11474 , H01L2224/1148 , H01L2224/1181 , H01L2224/119 , H01L2224/13023 , H01L2224/13025 , H01L2224/13082 , H01L2224/13083 , H01L2224/131 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13157 , H01L2224/1316 , H01L2224/13164 , H01L2224/16227 , H01L2224/81191 , H01L2224/81193 , H01L2224/81801 , H01L2224/94 , H01L2924/381 , H01L2924/01074 , H01L2924/01024 , H01L2924/00014 , H01L2924/01047 , H01L2924/01029 , H01L2924/014 , H01L2924/00012 , H01L2224/11 , H01L2224/1146
摘要： A semiconductor structures includes a contact fabricated utilizing a multi material trench-layer. The multi material trench layer is utilized to form a contact trench and the contact trench is utilized to form the contact therein. The trench-layer includes a lower barrier trench layer and an upper photoprocessing layer. The photoprocessing layer is utilized pattern and form contact trench. The barrier layer protects an electroplating conductive layer utilized in forming the contact from corrosion that may occur during the removal of the photoprocessing layer.
摘要翻译：半导体结构包括利用多材料沟槽层制造的接触。多材料沟槽层用于形成接触沟槽，并且接触沟槽用于在其中形成接触。沟槽层包括下阻挡沟槽层和上光电处理层。光刻处理层采用图案形成接触沟槽。阻挡层保护用于形成接触的电镀导电层免受在去除光处理层期间可能发生的腐蚀。

2. 发明申请

US20150352476A1 FILTERING LEAD FROM PHOTORESIST STRIPPING SOLUTION 有权
标题翻译：从光电剥离解决方案过滤铅
公开(公告)号：US20150352476A1
公开(公告)日：2015-12-10
申请号：US14299444
申请日：2014-06-09
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Charles L. Arvin , Harry D. Cox , Arthur G. Merryman , Jennifer D. Schuler
IPC分类号： B01D39/12 , H01L21/02 , G03F7/42 , B01D39/06 , B01D39/20
CPC分类号： G03F7/422 , B01D39/12 , H01L21/31133
摘要： A photoresist stripping tool includes a reservoir configured to contain photoresist stripping solution and a Pb filter comprising a filter element with Tin (Sn) exterior surfaces. A semiconductor wafer fabrication system includes a semiconductor wafer attached to the photoresist stripping tool that strips photoresist from the semiconductor wafer. A photoresist stripping processes includes stripping photoresist from a leaded semiconductor wafer with photoresist stripping solution within the photoresist stripping tool, filtering Lead Pb from the photoresist stripping solution with the Pb filter, and stripping photoresist from a lead-free semiconductor wafer with the filtered photoresist stripping solution.
摘要翻译：光致抗蚀剂剥离工具包括被配置为容纳光致抗蚀剂剥离溶液的储存器和包含具有锡（Sn）外表面的过滤元件的Pb过滤器。半导体晶片制造系统包括附接到光致抗蚀剂剥离工具的半导体晶片，其从半导体晶片剥离光致抗蚀剂。光致抗蚀剂剥离工艺包括用光致抗蚀剂剥离工具中的光致抗蚀剂剥离溶液从带引线的半导体晶片剥离光致抗蚀剂，用来自光致抗蚀剂剥离溶液的Pb过滤器过滤铅Pb，以及用无过滤的光致抗蚀剂剥离的无铅半导体晶片剥离光致抗蚀剂解。

3. 发明授权

US09679796B2 Anodized metal on carrier wafer 有权
公开(公告)号：US09679796B2
公开(公告)日：2017-06-13
申请号：US14525254
申请日：2014-10-28
申请人： International Business Machines Corporation
发明人： Charles L. Arvin , Harry D. Cox , Jorge A. Lubguban , Jennifer D. Schuler
IPC分类号： H01L21/68 , H01L21/683
CPC分类号： H01L21/6831 , H01L21/6835 , H01L2221/68318 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381
摘要： A method for processing a semiconductor wafer where an electrostatic layer is located on a surface of a handling wafer is used so the surface of the handling wafer may be handled with machinery that uses an electrostatic chuck. The electrostatic layer may be manipulated to increase or decrease the conductivity, and may be removed to allow light to pass through the handling wafer.

4. 发明授权

US09401336B2 Dual layer stack for contact formation 有权
标题翻译：用于接触形成的双层堆叠
公开(公告)号：US09401336B2
公开(公告)日：2016-07-26
申请号：US14532764
申请日：2014-11-04
申请人： International Business Machines Corporation
发明人： Charles L. Arvin , Harry D. Cox , Brian M. Erwin , Sarah H. Knickerbocker , Karen P. McLaughlin , David J. Russell
IPC分类号： H01L23/00
CPC分类号： H01L24/11 , H01L24/03 , H01L24/05 , H01L24/13 , H01L24/16 , H01L24/81 , H01L24/94 , H01L2224/0345 , H01L2224/0361 , H01L2224/03612 , H01L2224/03614 , H01L2224/0381 , H01L2224/03912 , H01L2224/05147 , H01L2224/05166 , H01L2224/05647 , H01L2224/05655 , H01L2224/11462 , H01L2224/1147 , H01L2224/11474 , H01L2224/1148 , H01L2224/1181 , H01L2224/119 , H01L2224/13023 , H01L2224/13025 , H01L2224/13082 , H01L2224/13083 , H01L2224/131 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13157 , H01L2224/1316 , H01L2224/13164 , H01L2224/16227 , H01L2224/81191 , H01L2224/81193 , H01L2224/81801 , H01L2224/94 , H01L2924/381 , H01L2924/01074 , H01L2924/01024 , H01L2924/00014 , H01L2924/01047 , H01L2924/01029 , H01L2924/014 , H01L2924/00012 , H01L2224/11 , H01L2224/1146
摘要： A semiconductor structures includes a contact fabricated utilizing a multi material trench-layer. The multi material trench layer is utilized to form a contact trench and the contact trench is utilized to form the contact therein. The trench-layer includes a lower barrier trench layer and an upper photoprocessing layer. The photoprocessing layer is utilized pattern and form contact trench. The barrier layer protects an electroplating conductive layer utilized in forming the contact from corrosion that may occur during the removal of the photoprocessing layer.
摘要翻译：半导体结构包括利用多材料沟槽层制造的接触。多材料沟槽层用于形成接触沟槽，并且接触沟槽用于在其中形成接触。沟槽层包括下阻挡沟槽层和上光电处理层。光刻处理层采用图案形成接触沟槽。阻挡层保护用于形成接触的电镀导电层免受在去除光处理层期间可能发生的腐蚀。

5. 发明申请

US20150311161A1 SELECTIVE PLATING WITHOUT PHOTORESIST 审中-公开
标题翻译：选择性放置没有光电子
公开(公告)号：US20150311161A1
公开(公告)日：2015-10-29
申请号：US14263423
申请日：2014-04-28
申请人： International Business Machines Corporation
发明人： Charles L. Arvin , Harry D. Cox , Brian M. Erwin , John J. Garant , Ekta Misra , Nicholas A. Polomoff , Jennifer D. Schuler
IPC分类号： H01L23/532 , H01L21/321 , H01L21/288 , H01L23/528 , H01L21/768
CPC分类号： H01L23/53238 , C25D3/38 , C25D5/02 , C25D5/022 , C25D5/48 , C25D7/123 , H01L21/76843 , H01L21/76865 , H01L21/76873 , H01L21/76879 , H01L23/528 , H01L23/53228 , H01L23/53233 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： A method including forming a stack of layers on top of a dielectric layer and within an opening in the dielectric layer, the stack of layers comprising a first layer, a second layer, a third layer, and a fourth layer, each formed successively one on top of another, removing a first portion of the fourth layer outside the opening to expose a portion of the third layer, a second portion of the fourth layer remains within the opening, filling the opening with a metal by applying an electrical potential to the second layer during an electroplating technique in which the metal plates out on the fourth layer but does not plate out on the third layer, and removing portions of the first layer, the second layer, and the third layer to expose an upper surface of the dielectric layer between the opening and an adjacent opening.
摘要翻译：一种方法，包括在电介质层的顶部和电介质层的开口内形成层叠层，所述层叠层包括第一层，第二层，第三层和第四层，另一个顶部，除去开口外部的第四层的第一部分以暴露第三层的一部分，第四层的第二部分保留在开口内，通过向第二层施加电势而用金属填充开口在电镀技术中，金属板在第四层上排出但不在第三层上沉积，并且去除第一层，第二层和第三层的部分以暴露介电层的上表面在开口和相邻开口之间。

6. 发明申请

US20160118287A1 NON-TRANSPARENT MICROELECTRONIC GRADE GLASS AS A SUBSTRATE, TEMPORARY CARRIER OR WAFER 有权
标题翻译：非透明微电子玻璃作为基板，临时载体或波形
公开(公告)号：US20160118287A1
公开(公告)日：2016-04-28
申请号：US14525267
申请日：2014-10-28
申请人： International Business Machines Corporation
发明人： Charles L. Arvin , Harry D. Cox , Brian M. Erwin , Jorge A. Lubguban , Eric D. Perfecto , Jennifer D. Schuler
IPC分类号： H01L21/683 , H01L21/66 , B32B7/12 , B32B9/04 , B32B17/06 , H01L21/302 , H01L21/268
CPC分类号： H01L21/6835 , B32B7/06 , B32B7/12 , B32B9/04 , B32B17/06 , B32B2457/14 , H01L22/12 , H01L2221/68318 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381
摘要： A method for processing a semiconductor wafer where an opaque layer is located on a surface of a handling wafer is used so the surface of the handling wafer may be detected through optical sensors. The opaque layer may be modified, or oriented, to allow light to pass through unobstructed.
摘要翻译：使用用于处理半导体晶片的方法，其中不透明层位于处理晶片的表面上，因此可以通过光学传感器检测处理晶片的表面。不透明层可以被修改或取向，以允许光畅通无阻。

7. 发明申请

US20160118283A1 ANODIZED METAL ON CARRIER WAFER 有权
标题翻译：载体波浪上的阳极金属
公开(公告)号：US20160118283A1
公开(公告)日：2016-04-28
申请号：US14525254
申请日：2014-10-28
申请人： International Business Machines Corporation
发明人： Charles L. Arvin , Harry D. Cox , Jorge A. Lubguban , Jennifer D. Schuler
IPC分类号： H01L21/683 , B32B38/10 , B32B37/18
CPC分类号： H01L21/6831 , H01L21/6835 , H01L2221/68318 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381
摘要： A method for processing a semiconductor wafer where an electrostatic layer is located on a surface of a handling wafer is used so the surface of the handling wafer may be handled with machinery that uses an electrostatic chuck. The electrostatic layer may be manipulated to increase or decrease the conductivity, and may be removed to allow light to pass through the handling wafer.
摘要翻译：使用用于处理静电层位于处理晶片的表面上的半导体晶片的方法，因此处理晶片的表面可以利用使用静电卡盘的机械来处理。可以操作静电层以增加或降低导电性，并且可以去除静电层以允许光通过处理晶片。

8. 发明申请

US20150337451A1 ELECTRODEPOSITION SYSTEMS AND METHODS THAT MINIMIZE ANODE AND/OR PLATING SOLUTION DEGRADATION 有权
标题翻译：最小化阳极和/或镀层溶液降解的电沉积系统和方法
公开(公告)号：US20150337451A1
公开(公告)日：2015-11-26
申请号：US14284932
申请日：2014-05-22
申请人： International Business Machines Corporation
发明人： Charles L. Arvin , Harry D. Cox , Eric D. Perfecto
IPC分类号： C25D21/12 , C25D17/00
CPC分类号： C25D5/18 , C25D17/10 , C25D21/12
摘要： Disclosed are electrodeposition systems and methods wherein at least three electrodes are placed in a container containing a plating solution. The electrodes are connected to a polarity-switching unit and include a first electrode, a second electrode and a third electrode. The polarity-switching unit establishes a constant polarity state between the first and second electrodes in the solution during an active plating mode, wherein the first electrode has a negative polarity and the second electrode has a positive polarity, thereby allowing a plated layer to form on a workpiece at the first electrode. The polarity-switching unit further establishes an oscillating polarity state between the second and third electrodes during a non-plating mode (i.e., when the first electrode is removed from the plating solution), wherein the second electrode and the third electrode have opposite polarities that switch at regular, relatively fast, intervals, thereby limiting degradation of the second electrode and/or the plating solution.
摘要翻译：公开了电沉积系统和方法，其中至少三个电极放置在容纳电镀液的容器中。电极连接到极性切换单元，并且包括第一电极，第二电极和第三电极。极性切换单元在有源电镀模式期间在溶液中的第一和第二电极之间建立恒定的极性状态，其中第一电极具有负极性，并且第二电极具有正极性，从而允许电镀层形成第一电极处的工件。极性切换单元进一步在非电镀模式（即，当第一电极从电镀溶液中除去时）在第二和第三电极之间建立振荡极性状态，其中第二电极和第三电极具有相反的极性，以规则，相对较快的间隔切换，从而限制第二电极和/或电镀液的劣化。

9. 发明授权

US09804498B2 Filtering lead from photoresist stripping solution 有权
公开(公告)号：US09804498B2
公开(公告)日：2017-10-31
申请号：US14299444
申请日：2014-06-09
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Charles L. Arvin , Harry D. Cox , Arthur G. Merryman , Jennifer D. Schuler
IPC分类号： G03F7/42 , H01L21/311 , B01D39/12
CPC分类号： G03F7/422 , B01D39/12 , H01L21/31133
摘要： A photoresist stripping tool includes a reservoir configured to contain photoresist stripping solution and a Pb filter comprising a filter element with Tin (Sn) exterior surfaces. A semiconductor wafer fabrication system includes a semiconductor wafer attached to the photoresist stripping tool that strips photoresist from the semiconductor wafer. A photoresist stripping processes includes stripping photoresist from a leaded semiconductor wafer with photoresist stripping solution within the photoresist stripping tool, filtering Lead Pb from the photoresist stripping solution with the Pb filter, and stripping photoresist from a lead-free semiconductor wafer with the filtered photoresist stripping solution.

10. 发明授权

US09728440B2 Non-transparent microelectronic grade glass as a substrate, temporary carrier or wafer 有权
公开(公告)号：US09728440B2
公开(公告)日：2017-08-08
申请号：US14525267
申请日：2014-10-28
申请人： International Business Machines Corporation
发明人： Charles L. Arvin , Harry D. Cox , Brian M. Erwin , Jorge A. Lubguban , Eric D. Perfecto , Jennifer D. Schuler
IPC分类号： B32B41/00 , H01L21/683 , B32B9/04 , B32B17/06 , B32B7/12 , B32B7/06 , H01L21/66
CPC分类号： H01L21/6835 , B32B7/06 , B32B7/12 , B32B9/04 , B32B17/06 , B32B2457/14 , H01L22/12 , H01L2221/68318 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381
摘要： A method for processing a semiconductor wafer where an opaque layer is located on a surface of a handling wafer is used so the surface of the handling wafer may be detected through optical sensors. The opaque layer may be modified, or oriented, to allow light to pass through unobstructed.

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