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1. 发明申请

US20150187574A1 IGZO with Intra-Layer Variations and Methods for Forming the Same 审中-公开
标题翻译：具有层间变化的IGZO及其形成方法
公开(公告)号：US20150187574A1
公开(公告)日：2015-07-02
申请号：US14140797
申请日：2013-12-26
申请人： LG Display Co. Ltd. , Intermolecular Inc.
发明人： Minh Huu Le , Yoon-Kyung Chang , Seon-Mee Cho , Min-Cheol Kim , Sang Lee , Kwon-Sik Park , Woosup Shin
IPC分类号： H01L21/02 , H01L29/66
CPC分类号： H01L21/02631 , H01L21/02422 , H01L21/02472 , H01L21/02483 , H01L21/02554 , H01L21/02565 , H01L29/66969 , H01L29/7869 , H01L29/78693 , H01L29/78696
摘要： Embodiments described herein provide method for forming crystalline indium-gallium-zinc oxide (IGZO) with intra-layer variations and methods for forming such IGZO. At least a portion of a substrate is positioned in a processing chamber. A first sub-layer of an IGZO layer is formed above the at least a portion of the substrate while the at least a portion of the substrate is in the processing chamber. The first sub-layer of the IGZO layer is formed using a first set of processing conditions. A second sub-layer of the IGZO layer is formed above the first sub-layer of the IGZO layer while the at least a portion of the substrate is in the processing chamber. The second sub-layer of the IGZO layer is formed using a second set of processing conditions. The second set of processing conditions is different than the first set of processing conditions.
摘要翻译：本文所述的实施方案提供了具有层内变化的晶体铟镓锌氧化物（IGZO）的方法和用于形成这种IGZO的方法。衬底的至少一部分位于处理室中。在基板的至少一部分上方形成IGZO层的第一子层，同时基板的至少一部分位于处理室中。使用第一组处理条件形成IGZO层的第一子层。 IGZO层的第二子层形成在IGZO层的第一子层的上方，而基板的至少一部分在处理室内。 IGZO层的第二子层使用第二组处理条件形成。第二组处理条件与第一组处理条件不同。

2. 发明授权

US09722049B2 Methods for forming crystalline IGZO with a seed layer 有权
公开(公告)号：US09722049B2
公开(公告)日：2017-08-01
申请号：US14138750
申请日：2013-12-23
申请人： Intermolecular Inc. , LG Display Co., Ltd.
发明人： Sang Lee , Khaled Ahmed , Youn-Gyoung Chang , Min-Cheol Kim , Minh Huu Le , Kwon-Sik Park , Woosup Shin
IPC分类号： H01L21/00 , H01L29/66
CPC分类号： H01L29/66742 , H01L29/66969 , H01L29/7869 , H01L29/78696
摘要： Embodiments described herein provide method for forming crystalline indium-gallium-zinc oxide (IGZO). A substrate is provided. A seed layer is formed above the substrate. The seed layer has a crystalline structure that is substantially dominant along the c-axis. An IGZO layer is formed above the seed layer. The seed layer may include zinc oxide. A stack of alternating seed layers and IGZO layers may be formed.

3. 发明申请

US20150179446A1 Methods for Forming Crystalline IGZO Through Processing Condition Optimization 审中-公开
标题翻译：通过加工条件优化形成结晶IGZO的方法
公开(公告)号：US20150179446A1
公开(公告)日：2015-06-25
申请号：US14137749
申请日：2013-12-20
申请人： LG DISPLAY CO., LTD. , INTERMOLECULAR, INC.
发明人： Sang Lee , Stuart Brinkley , Yoon-Kyung Chang , Seon-Mee Cho , Min-Cheol Kim , Kwon-Sik Park , Woosup Shin
IPC分类号： H01L21/02 , H01L29/66 , H01L29/786
CPC分类号： H01L29/66969 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/02667 , H01L29/7869
摘要： Embodiments described herein provide method for forming crystalline indium-gallium-zinc oxide (IGZO). A substrate is provided. A layer is formed above the substrate using a PVD process. The layer includes indium, gallium, zinc, or a combination thereof. The PVD process is performed in a gaseous environment having a pressure of between about 1 mT and about 5 mT and including between about 20% and about 100% oxygen gas. The PVD process may be performed at a processing temperature between about 25° C. and about 400° C. The duty cycle of the PVD process may be between about 70% and about 100%.
摘要翻译：本文所述的实施方案提供了形成晶体铟镓锌氧化物（IGZO）的方法。提供基板。使用PVD工艺在衬底上形成一层。该层包括铟，镓，锌或其组合。 PVD工艺在压力为约1mT至约5mT，包括约20％至约100％氧气的气态环境中进行。 PVD工艺可以在约25℃至约400℃的加工温度下进行.RPC工艺的占空比可以在约70％至约100％之间。

4. 发明申请

US20150179444A1 Methods for Forming Crystalline IGZO Through Power Supply Mode Optimization 审中-公开
标题翻译：通过电源模式优化形成晶体IGZO的方法
公开(公告)号：US20150179444A1
公开(公告)日：2015-06-25
申请号：US14139195
申请日：2013-12-23
申请人： LG Display Co., Ltd. , Intermolecular, Inc.
发明人： Sang Lee , Yoon-Kyung Chang , Seon-Mee Cho , Min-Cheol Kim , Kwon-Sik Park , Woosup Shin
IPC分类号： H01L21/02 , H01L29/786 , H01L29/66
CPC分类号： H01L21/02554 , H01L21/02565 , H01L21/0262 , H01L21/02631 , H01L29/66969 , H01L29/7869
摘要： Embodiments described herein provide method for forming crystalline indium-gallium-zinc oxide (IGZO). A substrate is positioned relative to at least one target. The at least one target includes indium, gallium, zinc, or a combination thereof. A substantially constant voltage is provided across the substrate and the at least one target to cause a plasma species to impact the at least one target. The impacting of the plasma species on the at least one target causes material to be ejected from the at least one target to form an IGZO layer above the substrate.
摘要翻译：本文所述的实施方案提供了形成晶体铟镓锌氧化物（IGZO）的方法。衬底相对于至少一个靶定位。所述至少一个靶包括铟，镓，锌或其组合。在衬底和至少一个靶上提供基本上恒定的电压，以使等离子体物质影响至少一个靶。等离子体物质对至少一个靶材的影响使材料从至少一个靶材喷出，以在基底上方形成IGZO层。

5. 发明申请

US20150179442A1 Methods for Forming Crystalline IGZO with a Seed Layer 有权
标题翻译：用种子层形成结晶IGZO的方法
公开(公告)号：US20150179442A1
公开(公告)日：2015-06-25
申请号：US14138750
申请日：2013-12-23
申请人： LG Display Co., Ltd. , Intermolecular Inc.
发明人： Sang Lee , Khaled Ahmed , Yoon-Kyung Chang , Min-Cheol Kim , Minh Huu Le , Kwon-Sik Park , Woosup Shin
IPC分类号： H01L21/02 , H01L29/66
CPC分类号： H01L29/66742 , H01L29/66969 , H01L29/7869 , H01L29/78696
摘要： Embodiments described herein provide method for forming crystalline indium-gallium-zinc oxide (IGZO). A substrate is provided. A seed layer is formed above the substrate. The seed layer has a crystalline structure that is substantially dominant along the c-axis. An IGZO layer is formed above the seed layer. The seed layer may include zinc oxide. A stack of alternating seed layers and IGZO layers may be formed.
摘要翻译：本文所述的实施方案提供了形成晶体铟镓锌氧化物（IGZO）的方法。提供基板。种子层形成在衬底上。种子层具有沿着c轴基本上占优势的晶体结构。在种子层上方形成IGZO层。种子层可以包括氧化锌。可以形成交替种子层和IGZO层的堆叠。

6. 发明授权

US09202690B2 Methods for forming crystalline IGZO through annealing 有权
标题翻译：通过退火形成晶体IGZO的方法
公开(公告)号：US09202690B2
公开(公告)日：2015-12-01
申请号：US14137717
申请日：2013-12-20
申请人： Intermolecular, Inc. , LG Display Co., Ltd.
发明人： Sang Lee , Stuart Brinkley , Yoon-Kyung Chang , Seon-Mee Cho , Min-Cheol Kim , Kwon-Sik Park , Woosup Shin
IPC分类号： H01L21/00 , H01L21/16 , H01L29/10 , H01L29/12 , H01L21/02 , H01L29/786 , H01L29/66
CPC分类号： H01L21/02667 , H01L21/02554 , H01L21/02565 , H01L29/66969 , H01L29/7869
摘要： Embodiments described herein provide method for forming crystalline indium-gallium-zinc oxide (IGZO). A substrate is provided. An IGZO layer is formed above the substrate. The IGZO layer is annealed in an environment consisting essentially of nitrogen gas.
摘要翻译：本文所述的实施方案提供了形成晶体铟镓锌氧化物（IGZO）的方法。提供基板。在基板上形成IGZO层。 IGZO层在基本上由氮气组成的环境中退火。

7. 发明申请

US20150179448A1 Methods for Forming Crystalline IGZO Through Annealing 有权
标题翻译：通过退火形成结晶IGZO的方法
公开(公告)号：US20150179448A1
公开(公告)日：2015-06-25
申请号：US14137717
申请日：2013-12-20
申请人： LG Display Co., Ltd. , Intermolecular, Inc.
发明人： Sang Lee , Stuart Brinkley , Yoon-Kyung Chang , Seon-Mee Cho , Min-Cheol Kim , Kwon-Sik Park , Woosup Shin
IPC分类号： H01L21/02 , H01L29/66 , H01L29/786
CPC分类号： H01L21/02667 , H01L21/02554 , H01L21/02565 , H01L29/66969 , H01L29/7869
摘要： Embodiments described herein provide method for forming crystalline indium-gallium-zinc oxide (IGZO). A substrate is provided. An IGZO layer is formed above the substrate. The IGZO layer is annealed in an environment consisting essentially of nitrogen gas.
摘要翻译：本文所述的实施方案提供了形成晶体铟镓锌氧化物（IGZO）的方法。提供基板。在基板上形成IGZO层。 IGZO层在基本上由氮气组成的环境中退火。

8. 发明授权

US10411134B2 Crystallization method for oxide semiconductor layer, semiconductor device manufactured using the same, and method for manufacturing the semiconductor device 有权
公开(公告)号：US10411134B2
公开(公告)日：2019-09-10
申请号：US15934360
申请日：2018-03-23
申请人： LG DISPLAY CO., LTD.
发明人： Min-Cheol Kim , Youn-Gyoung Chang , Kwon-Shik Park , So-Hyung Lee , Ho-Young Jung , Ha-Jin Yoo , Jeong-Suk Yang
IPC分类号： H01L29/786 , H01L21/02 , H01L21/477 , H01L29/10 , H01L29/66
摘要： A display device includes a gate electrode on a substrate of a semiconductor device, a gate insulating film over the gate electrode, an active layer comprising an oxide including indium, zinc and gallium on the gate insulating film, and overlapping the gate electrode, and a source electrode and a drain electrode that are spaced apart from each other, wherein the active layer is formed from a zinc-rich target material, and an atomic % ratio of indium, zinc and gallium in the active layer is different from an atomic % ratio of the zinc-rich target material.

9. 发明授权

US09735281B2 Crystallization method for oxide semiconductor layer, semiconductor device manufactured using the same, and method for manufacturing the semiconductor device 有权
公开(公告)号：US09735281B2
公开(公告)日：2017-08-15
申请号：US14937598
申请日：2015-11-10
申请人： LG Display Co., Ltd.
发明人： Min-Cheol Kim , Youn-Gyoung Chang , Kwon-Shik Park , So-Hyung Lee , Ho-Young Jung , Ha-Jin Yoo , Jeong-Suk Yang
IPC分类号： H01L29/12 , H01L29/786 , H01L21/02 , H01L21/477 , H01L29/10
CPC分类号： H01L29/7869 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/02667 , H01L21/477 , H01L29/1033 , H01L29/66969
摘要： An oxide semiconductor crystallization method may include depositing an In—Ga—Zn oxide over the substrate while heating a substrate to a temperature of 200 to 300° C., and heat-treating the deposited In—Ga—Zn oxide at a temperature of 200 to 350° C., thereby forming an oxide semiconductor layer crystallized throughout an entire thickness thereof.

10. 发明申请

US20150187809A1 METHOD FOR MANUFACTURING THIN FILM TRANSISTOR ARRAY SUBSTRATE 有权
标题翻译：制造薄膜晶体管阵列基板的方法
公开(公告)号：US20150187809A1
公开(公告)日：2015-07-02
申请号：US14582274
申请日：2014-12-24
申请人： LG Display Co., Ltd.
发明人： Min-Cheol Kim , Youn-Gyoung Chang , Kwon-Shik Park , So-Hyung Lee , Ho-Young Jung , Ha-Jin Yoo , Jeong-Suk Yang
IPC分类号： H01L27/12
CPC分类号： H01L27/124 , H01L27/1225 , H01L27/1248 , H01L27/1288
摘要： A method for manufacturing a thin film transistor (TFT) array substrate having enhanced reliability is disclosed. The method includes forming a multilayer structure including at least one first metal layer and a second metal layer made of copper, forming a first mask layer including a first mask area corresponding to a data line and a second mask area corresponding to an electrode pattern to overlap with an active layer, patterning the multilayer structure, thereby forming the data line constituted by the multilayer structure, patterning the second metal layer, thereby forming the electrode pattern constituted by the at least one first metal layer, forming a second mask layer to expose a portion of the electrode pattern corresponding to a channel area of the active layer, patterning the at least one first metal layer, thereby forming source and drain.
摘要翻译：公开了一种制造具有增强的可靠性的薄膜晶体管（TFT）阵列基板的方法。该方法包括形成包括至少一个第一金属层和由铜制成的第二金属层的多层结构，形成第一掩模层，第一掩模层包括对应于数据线的第一掩模区域和对应于电极图案的第二掩模区域以重叠具有有源层，图案化多层结构，从而形成由多层结构构成的数据线，图案化第二金属层，从而形成由至少一个第一金属层构成的电极图案，形成第二掩模层以暴露所述电极图案的部分对应于所述有源层的沟道区域，图案化所述至少一个第一金属层，从而形成源极和漏极。

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