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1. 发明申请

US20150187574A1 IGZO with Intra-Layer Variations and Methods for Forming the Same 审中-公开
标题翻译：具有层间变化的IGZO及其形成方法
公开(公告)号：US20150187574A1
公开(公告)日：2015-07-02
申请号：US14140797
申请日：2013-12-26
申请人： LG Display Co. Ltd. , Intermolecular Inc.
发明人： Minh Huu Le , Yoon-Kyung Chang , Seon-Mee Cho , Min-Cheol Kim , Sang Lee , Kwon-Sik Park , Woosup Shin
IPC分类号： H01L21/02 , H01L29/66
CPC分类号： H01L21/02631 , H01L21/02422 , H01L21/02472 , H01L21/02483 , H01L21/02554 , H01L21/02565 , H01L29/66969 , H01L29/7869 , H01L29/78693 , H01L29/78696
摘要： Embodiments described herein provide method for forming crystalline indium-gallium-zinc oxide (IGZO) with intra-layer variations and methods for forming such IGZO. At least a portion of a substrate is positioned in a processing chamber. A first sub-layer of an IGZO layer is formed above the at least a portion of the substrate while the at least a portion of the substrate is in the processing chamber. The first sub-layer of the IGZO layer is formed using a first set of processing conditions. A second sub-layer of the IGZO layer is formed above the first sub-layer of the IGZO layer while the at least a portion of the substrate is in the processing chamber. The second sub-layer of the IGZO layer is formed using a second set of processing conditions. The second set of processing conditions is different than the first set of processing conditions.
摘要翻译：本文所述的实施方案提供了具有层内变化的晶体铟镓锌氧化物（IGZO）的方法和用于形成这种IGZO的方法。衬底的至少一部分位于处理室中。在基板的至少一部分上方形成IGZO层的第一子层，同时基板的至少一部分位于处理室中。使用第一组处理条件形成IGZO层的第一子层。 IGZO层的第二子层形成在IGZO层的第一子层的上方，而基板的至少一部分在处理室内。 IGZO层的第二子层使用第二组处理条件形成。第二组处理条件与第一组处理条件不同。

2. 发明授权

US09722049B2 Methods for forming crystalline IGZO with a seed layer 有权
公开(公告)号：US09722049B2
公开(公告)日：2017-08-01
申请号：US14138750
申请日：2013-12-23
申请人： Intermolecular Inc. , LG Display Co., Ltd.
发明人： Sang Lee , Khaled Ahmed , Youn-Gyoung Chang , Min-Cheol Kim , Minh Huu Le , Kwon-Sik Park , Woosup Shin
IPC分类号： H01L21/00 , H01L29/66
CPC分类号： H01L29/66742 , H01L29/66969 , H01L29/7869 , H01L29/78696
摘要： Embodiments described herein provide method for forming crystalline indium-gallium-zinc oxide (IGZO). A substrate is provided. A seed layer is formed above the substrate. The seed layer has a crystalline structure that is substantially dominant along the c-axis. An IGZO layer is formed above the seed layer. The seed layer may include zinc oxide. A stack of alternating seed layers and IGZO layers may be formed.

3. 发明申请

US20150179442A1 Methods for Forming Crystalline IGZO with a Seed Layer 有权
标题翻译：用种子层形成结晶IGZO的方法
公开(公告)号：US20150179442A1
公开(公告)日：2015-06-25
申请号：US14138750
申请日：2013-12-23
申请人： LG Display Co., Ltd. , Intermolecular Inc.
发明人： Sang Lee , Khaled Ahmed , Yoon-Kyung Chang , Min-Cheol Kim , Minh Huu Le , Kwon-Sik Park , Woosup Shin
IPC分类号： H01L21/02 , H01L29/66
CPC分类号： H01L29/66742 , H01L29/66969 , H01L29/7869 , H01L29/78696
摘要： Embodiments described herein provide method for forming crystalline indium-gallium-zinc oxide (IGZO). A substrate is provided. A seed layer is formed above the substrate. The seed layer has a crystalline structure that is substantially dominant along the c-axis. An IGZO layer is formed above the seed layer. The seed layer may include zinc oxide. A stack of alternating seed layers and IGZO layers may be formed.
摘要翻译：本文所述的实施方案提供了形成晶体铟镓锌氧化物（IGZO）的方法。提供基板。种子层形成在衬底上。种子层具有沿着c轴基本上占优势的晶体结构。在种子层上方形成IGZO层。种子层可以包括氧化锌。可以形成交替种子层和IGZO层的堆叠。

4. 发明授权

US09405046B2 High solar gain low-e panel and method for forming the same 有权
标题翻译：高太阳能增益低e板及其形成方法
公开(公告)号：US09405046B2
公开(公告)日：2016-08-02
申请号：US13799100
申请日：2013-03-13
申请人： Intermolecular Inc.
发明人： Guowen Ding , Jeremy Cheng , Minh Huu Le , Daniel Schweigert , Zhi-Wen Sun , Guizhen Zhang
IPC分类号： F21V9/04 , F21V9/06 , G02B5/08 , G02B5/20 , C03C17/36 , G02B5/28
CPC分类号： G02B5/208 , C03C17/36 , C03C17/3644 , C03C17/366 , G02B5/281
摘要： Embodiments provided herein describe low-e panels and methods for forming low-e panels. A transparent substrate is provided. A reflective layer is formed above the transparent substrate. An over-coating layer is formed above the reflective layer. The over-coating layer includes first, second, and third sub-layers. The second sub-layer is between the first and third sub-layers, and the first and third sub-layers include the same material.
摘要翻译：本文提供的实施例描述了用于形成低e板的低e板和方法。提供透明基板。在透明基板的上方形成反射层。在反射层上方形成覆盖层。覆盖层包括第一，第二和第三子层。第二子层位于第一和第三子层之间，第一和第三子层包括相同的材料。

5. 发明授权

US09391232B1 Variable composition transparent conductive oxide layer and methods of forming thereof 有权
标题翻译：可变组合物透明导电氧化物层及其形成方法
公开(公告)号：US09391232B1
公开(公告)日：2016-07-12
申请号：US14577967
申请日：2014-12-19
申请人： Intermolecular, Inc.
发明人： Minh Huu Le , Jianhua Hu
IPC分类号： H01L33/42 , H01L33/00 , H01L33/38
CPC分类号： H01L33/005 , H01L33/38 , H01L33/42 , H01L2933/0016 , H01L2933/0033 , H01L2933/0058 , H01L2933/0066 , H01L2933/0091
摘要： Provided are light emitting diodes (LEDs) and methods of fabricating such LEDs. An LED may include a transparent conductive oxide (TCO) layer having a varying refractive index. For example, the refractive index may be higher at the interface of the TCO layer with an epitaxial stack than on the side of the TCO layer. The refractive index variability allows reducing light intensity losses in the LED. The refractive index variability may be achieved by feeding a substrate through a deposition chamber having a variable concentration of at least one process gas, such as oxygen. Specifically, the concentration of the process gas may be higher at one slit opening than at another slit opening. As the substrate moves through the deposition chamber, the TCO layer is continuously deposited. Due to the concentration variability, the resulting TCO layer may have a variable composition throughout the thickness of the TCO layer.
摘要翻译：提供了发光二极管（LED）和制造这种LED的方法。 LED可以包括具有变化的折射率的透明导电氧化物（TCO）层。例如，在具有外延堆叠的TCO层的界面处的折射率可以高于在TCO层的侧面上的折射率。折射率变化允许减少LED中的光强度损失。折射率可变性可以通过将衬底通过具有可变浓度的至少一种工艺气体（例如氧气）的沉积室进行。具体地，处理气体的浓度在一个狭缝开口处可以比在另一个狭缝开口处更高。当衬底移动通过沉积室时，TCO层被连续沉积。由于浓度变化，所得的TCO层可以在TCO层的整个厚度上具有可变的组成。

6. 发明申请

US20160122235A1 Low-E Panels and Methods of Forming the Same 审中-公开
标题翻译：低E面板及其形成方法
公开(公告)号：US20160122235A1
公开(公告)日：2016-05-05
申请号：US14531643
申请日：2014-11-03
申请人： Intermolecular Inc.
发明人： Guizhen Zhang , Guowen Ding , Tong Ju , Minh Huu Le , Daniel Schweigert
IPC分类号： C03C17/36
CPC分类号： C03C17/366 , C03C17/36 , C03C17/3602 , C03C17/3618 , C03C17/3626 , C03C17/3639 , C03C17/3642 , C03C17/3644 , C03C17/3681 , C03C2218/155
摘要： Embodiments provided herein describe low-e panels and methods for forming low-e panels. A transparent substrate is provided. A first dielectric layer is formed above the transparent substrate. The first dielectric layer includes zinc, tin, and aluminum. A first reflective layer is formed above the first dielectric layer. A second dielectric layer is formed above the first reflective layer. The second dielectric layer includes zinc, tin, and aluminum. A second reflective layer is formed above the second dielectric layer.
摘要翻译：本文提供的实施例描述了用于形成低e板的低e板和方法。提供透明基板。在透明基板的上方形成第一电介质层。第一介电层包括锌，锡和铝。第一反射层形成在第一介电层的上方。在第一反射层上方形成第二电介质层。第二电介质层包括锌，锡和铝。第二反射层形成在第二介电层的上方。

7. 发明授权

US09321676B2 Low-E glazing performance by seed structure optimization 有权
公开(公告)号：US09321676B2
公开(公告)日：2016-04-26
申请号：US14702284
申请日：2015-05-01
申请人： Intermolecular Inc. , Guardian Industries Corp.
发明人： Mohd Fadzli Anwar Hassan , Brent Boyce , Guowen Ding , Muhammad Imran , Minh Huu Le , Zhi-Wen Wen Sun , Yu Wang , Yongli Xu
IPC分类号： B32B15/04 , B32B17/06 , C03C17/23
CPC分类号： C03C17/23 , C03C17/06 , C03C17/34 , C03C17/36 , C03C17/3626 , C03C17/3644 , C03C17/366 , C03C2217/211 , C03C2217/24 , C30B23/00 , C30B25/00 , G02B5/208 , G02B5/285 , Y10T428/24868 , Y10T428/24975 , Y10T428/265
摘要： A bi-layer seed layer can exhibit good seed property for an infrared reflective layer, together with improved thermal stability. The bi-layer seed layer can include a thin zinc oxide layer having a desired crystallographic orientation for a silver infrared reflective layer disposed on a bottom layer having a desired thermal stability. The thermal stable layer can include aluminum, magnesium, or bismuth doped tin oxide (AlSnO, MgSnO, or BiSnO), which can have better thermal stability than zinc oxide but poorer lattice matching for serving as a seed layer template for silver (111).

8. 发明申请

US20150311397A1 Zinc Stannate Ohmic Contacts for P-Type Gallium Nitride 有权
标题翻译：锡锡酸盐欧姆接触P型氮化镓
公开(公告)号：US20150311397A1
公开(公告)日：2015-10-29
申请号：US14259387
申请日：2014-04-23
申请人： INTERMOLECULAR, INC.
发明人： Jianhua Hu , Heng Kai Hsu , Tong Ju , Minh Huu Le , Sandeep Nijhawan , Teresa B. Sapirman
IPC分类号： H01L33/42 , H01L33/32
CPC分类号： H01L33/42 , H01L33/32 , H01L33/40 , H01L33/483 , H01L2933/0016
摘要： Transparent ohmic contacts to p-GaN and other high-work-function (≧4.2 eV) semiconductors are fabricated from zinc stannate (e.g., ZnSnO3). ZnO and SnO2 may be sputtered from separate targets and annealed to form the zinc stannate. The Zn:Sn ratio may be tuned over the range between 1:2 and 2:1 to optimize bandgap, work function, conductivity, and transparency for the particular semiconductor and wavelength of interest. Conductivity may be improved by crystallizing the zinc stannate, by doping with up to 5 wt % Al or In, or both.
摘要翻译：由锡酸锡（例如ZnSnO 3）制造对p-GaN和其它高功函数（≥4.2eV）的半导体的透明欧姆接触。 ZnO和SnO2可以从单独的靶溅射并退火以形成锡酸锌。可以在1:2和2:1之间的范围内调整Zn：Sn比，以优化特定半导体和感兴趣的波长的带隙，功函数，电导率和透明度。可以通过使锡酸锌结晶，通过掺入高达5重量％的Al或In或两者来改善电导率。

9. 发明申请

US20150279674A1 CAAC IGZO Deposited at Room Temperature 审中-公开
标题翻译： CAAC IGZO在室温下沉积
公开(公告)号：US20150279674A1
公开(公告)日：2015-10-01
申请号：US14511475
申请日：2014-10-10
申请人： Intermolecular, Inc.
发明人： Seon-Mee Cho , Sang Lee , Minh Huu Le
IPC分类号： H01L21/02 , H01L29/786 , H01L29/04 , C23C14/14
CPC分类号： H01L21/02631 , C23C14/0036 , C23C14/086 , C23C14/352 , C23C14/562 , H01L21/02554 , H01L21/02565 , H01L29/045 , H01L29/66969 , H01L29/7869
摘要： A co-sputter technique is used to deposit In—Ga—Zn—O films using PVD. The films are deposited in an atmosphere including both oxygen and argon. A heater setpoint of about 300 C results in a substrate temperature of about 165 C. One target includes an alloy of In, Ga, Zn, and O with an atomic ratio of In:Ga:Zn of about 1:1:1. The second target includes a compound of zinc oxide. The third target includes a compound of indium oxide. The films exhibit the c-axis aligned crystalline (CAAC) phase in an as-deposited state, when deposited at room temperature, without the need of a subsequent anneal treatment.
摘要翻译：使用共溅射技术使用PVD沉积In-Ga-Zn-O膜。膜在包括氧和氩的气氛中沉积。约300℃的加热器设定值导致衬底温度为约165℃。一个靶包括In，Ga，Zn和O的合金，原子比为In：Ga：Zn为约1:1:1的原子比。第二靶标包括氧化锌的化合物。第三靶包括氧化铟的化合物。当在室温下沉积时，膜以沉积状态呈现c轴对准的结晶（CAAC）相，而不需要随后的退火处理。

10. 发明授权

US09121100B2 Silver based conductive layer for flexible electronics 有权
标题翻译：用于柔性电子元件的银基导电层
公开(公告)号：US09121100B2
公开(公告)日：2015-09-01
申请号：US13715477
申请日：2012-12-14
申请人： Intermolecular Inc.
发明人： Mohd Fadzli Anwar Hassan , Guowen Ding , Minh Huu Le , Minh Anh Anh Nguyen , Zhi-Wen Wen Sun , Guizhen Zhang
IPC分类号： C23C28/00 , C23C30/00 , H01L51/52 , H01L51/00
CPC分类号： H05K1/092 , C23C28/42 , C23C30/00 , H01L51/0097 , H01L51/5234 , H05K1/0274 , Y10T428/265
摘要： Methods for making conducting stacks includes forming a doped or alloyed silver layer sandwiched between two layers of transparent conductive oxide such as indium tin oxide (ITO). The doped silver or silver alloy layer can be thin, such as between 1.5 to 20 nm and thus can be transparent. The doped silver or silver alloy can provide improved ductility property, allowing the conductive stack to be bendable. The transparent conductive oxide layers can also be thin, allowing the conductive stack to have an improved ductility property.
摘要翻译：制造导电叠层的方法包括形成夹在两层透明导电氧化物（例如氧化铟锡（ITO））之间的掺杂或合金化的银层。掺杂的银或银合金层可以是薄的，例如在1.5至20nm之间，因此可以是透明的。掺杂的银或银合金可以提供改善的延展性，允许导电叠层可弯曲。透明导电氧化物层也可以是薄的，允许导电叠层具有改善的延展性。

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