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1. 发明申请

US20150179508A1 Tantalum-Based Copper Barriers and Methods for Forming the Same 审中-公开
标题翻译：钽基铜阻挡物及其形成方法
公开(公告)号：US20150179508A1
公开(公告)日：2015-06-25
申请号：US14138628
申请日：2013-12-23
申请人： INTERMOLECULAR INC.
发明人： Edwin Adhiprakasha , Sean Barstow , Frank Greer , Wenxian Zhu
IPC分类号： H01L21/768 , H01L23/532
CPC分类号： H01L21/76843 , H01L21/2855 , H01L21/28562 , H01L21/76846 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Embodiments described herein provide tantalum-based copper barriers and methods for forming such barriers. A dielectric body is provided. A first layer is formed above the dielectric body. The first layer includes tantalum. A second layer is formed above the first layer. The second layer includes manganese. A third layer is formed above the second layer. The third layer includes copper.
摘要翻译：本文所述的实施方案提供了钽基铜屏障和形成这种屏障的方法。提供介电体。第一层形成在绝缘体的上方。第一层包括钽。在第一层上方形成第二层。第二层包括锰。在第二层上方形成第三层。第三层包括铜。

2. 发明授权

US09245793B2 Plasma treatment of low-K surface to improve barrier deposition 有权
标题翻译：等离子体处理低K面以改善屏障沉积
公开(公告)号：US09245793B2
公开(公告)日：2016-01-26
申请号：US14135182
申请日：2013-12-19
申请人： Intermolecular, Inc.
发明人： Ratsamee Limdulpaiboon , Frank Greer , Chi-I Lang , J. Watanabe , Wenxian Zhu
IPC分类号： H01L21/31 , H01L21/768 , H01L21/3105 , H01J37/32
CPC分类号： H01L21/76841 , H01J37/32357 , H01J37/32449 , H01L21/3105 , H01L21/76814 , H01L21/76826 , H01L21/76843
摘要： Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A substrate heater can be mounted in the substrate support. A transport system moves the substrate support and is capable of positioning the substrate. The plasma system may be used to generate activated species. The activated species can be used to treat the surfaces of low-k and/or ultra low-k dielectric materials to facilitate improved deposition of diffusion barrier materials.
摘要翻译：公开了使用远程等离子体源的处理方法和装置。该装置包括封闭衬底支撑件，远程等离子体源和喷头的外室。基板加热器可以安装在基板支撑件中。运输系统移动基板支撑件并且能够定位基板。等离子体系统可用于产生活化物质。活化物质可用于处理低k和/或超低k介电材料的表面，以促进扩散阻挡材料的改进沉积。

3. 发明申请

US20150179509A1 Plasma Treatment of Low-K Surface to Improve Barrier Deposition 有权
标题翻译：低K表面的等离子体处理提高了阻挡层沉积
公开(公告)号：US20150179509A1
公开(公告)日：2015-06-25
申请号：US14135182
申请日：2013-12-19
申请人： Intermolecular, Inc.
发明人： Ratsamee Limdulpaiboon , Frank Greer , Chi-I Lang , J. Watanabe , Wenxian Zhu
IPC分类号： H01L21/768 , H01L21/02
CPC分类号： H01L21/76841 , H01J37/32357 , H01J37/32449 , H01L21/3105 , H01L21/76814 , H01L21/76826 , H01L21/76843
摘要： Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A substrate heater can be mounted in the substrate support. A transport system moves the substrate support and is capable of positioning the substrate. The plasma system may be used to generate activated species. The activated species can be used to treat the surfaces of low-k and/or ultra low-k dielectric materials to facilitate improved deposition of diffusion barrier materials.
摘要翻译：公开了使用远程等离子体源的处理方法和装置。该装置包括封闭衬底支撑件，远程等离子体源和喷头的外室。基板加热器可以安装在基板支撑件中。运输系统移动基板支撑件并且能够定位基板。等离子体系统可用于产生活化物质。活化物质可用于处理低k和/或超低k介电材料的表面，以促进扩散阻挡材料的改进沉积。

4. 发明申请

US20170186935A1 Low Temperature Deposition of Silicon Containing Layers in Superconducting Circuits 审中-公开
公开(公告)号：US20170186935A1
公开(公告)日：2017-06-29
申请号：US14982307
申请日：2015-12-29
申请人： Intermolecular, Inc.
发明人： Joseph Anthony Bonetti , Frank Greer , Wenxian Zhu
IPC分类号： H01L39/24 , H01L21/285
CPC分类号： H01L39/2493 , H01L21/02164 , H01L21/0217 , H01L21/02211 , H01L21/02271 , H01L39/2406
摘要： Provided are superconducting circuits and, more specifically, methods of forming such circuits. A method may involve forming a silicon-containing low loss dielectric (LLD) layer over a metal electrode such that metal carbides at the interface of the LLD layer and electrode. The LLD layer may be formed using chemical vapor deposition (CVD) at a temperature of less than about 500° C. At such a low temperature, metal silicides may not form even though silicon containing precursors may come in contact with metal of the electrode. Silicon containing precursors having silane molecules in which two silicon atoms bonded to each other (e.g., di-silane and tri-silane) may be used at these low temperatures. The LLD layer may include amorphous silicon, silicon oxide, or silicon nitride, and this layer may directly interface one or more metal electrodes. The thickness of LLD layer may be between about 1,000 Angstroms and 10,000 Angstroms.

5. 发明申请

US20150179436A1 Plasma densification of dielectrics for improved dielectric loss tangent 有权
公开(公告)号：US20150179436A1
公开(公告)日：2015-06-25
申请号：US14139222
申请日：2013-12-23
申请人： Intermolecular Inc.
发明人： Frank Greer , Andy Steinbach , Wenxian Zhu
IPC分类号： H01L21/02
CPC分类号： H01L27/18 , H01L39/2493
摘要： Defects in hydrogenated amorphous silicon are reduced by low-energy ion treatments and optional annealing. The treatments leave strongly-bonded hydrogen and other passivants in place, but increase the mobility of loosely-bonded and interstitially trapped hydrogen that would otherwise form unwanted two-level systems (TLS). The mobilized hydrogen atoms may be attracted to unused passivation sites or recombined into H2 gas and diffuse out of the deposited layer. The treatments also increase the density of the material. The optional anneal may partially crystallize the layer, further densify the layer, or both. The reduced number of defects and the increased crystallinity reduce the loss tangent of amorphous silicon dielectrics for superconducting microwave devices.

6. 发明授权

US09224783B2 Plasma densification of dielectrics for improved dielectric loss tangent 有权
标题翻译：电介质的等离子体致密化以改善介质损耗角正切
公开(公告)号：US09224783B2
公开(公告)日：2015-12-29
申请号：US14139222
申请日：2013-12-23
申请人： Intermolecular Inc.
发明人： Frank Greer , Andy Steinbach , Wenxian Zhu
IPC分类号： H01L21/31 , H01L21/469 , H01L27/18 , H01L39/24
CPC分类号： H01L27/18 , H01L39/2493
摘要： Defects in hydrogenated amorphous silicon are reduced by low-energy ion treatments and optional annealing. The treatments leave strongly-bonded hydrogen and other passivants in place, but increase the mobility of loosely-bonded and interstitially trapped hydrogen that would otherwise form unwanted two-level systems (TLS). The mobilized hydrogen atoms may be attracted to unused passivation sites or recombined into H2 gas and diffuse out of the deposited layer. The treatments also increase the density of the material. The optional anneal may partially crystallize the layer, further densify the layer, or both. The reduced number of defects and the increased crystallinity reduce the loss tangent of amorphous silicon dielectrics for superconducting microwave devices.
摘要翻译：通过低能离子处理和任选的退火，氢化非晶硅中的缺陷被减少。这些处理方法使氢键和其他钝化剂存在一定的位置，但会增加松散键合和间隙捕获的氢气的流动性，否则其将形成不需要的两级系统（TLS）。活化的氢原子可以被吸引到未使用的钝化位点或重新组合成H 2气体并扩散出沉积层。治疗也增加了材料的密度。可选择的退火可以部分地使层结晶，进一步使该层致密，或者两者都致密。减少的缺陷数量和增加的结晶度降低了用于超导微波器件的非晶硅电介质的损耗角正切。

7. 发明申请

US20150179914A1 Annealed dielectrics and heat-tolerant conductors for superconducting electronics 审中-公开
标题翻译：用于超导电子器件的退火电介质和耐热导体
公开(公告)号：US20150179914A1
公开(公告)日：2015-06-25
申请号：US14138692
申请日：2013-12-23
申请人： Intermolecular Inc.
发明人： Frank Greer , Andy Steinbach , Wenxian Zhu
IPC分类号： H01L39/24 , H01L39/02
CPC分类号： H01L23/53285 , H01L21/02123 , H01L21/02211 , H01L21/02271 , H01L21/02356 , H01L21/3105 , H01L21/76807 , H01L21/76828 , H01L21/76891 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A interconnect structure for superconducting devices uses a material with a high melting point for the superconductive wiring; examples include refractory metals such as niobium. Because the wiring is tolerant of high temperatures, the interlayer dielectric (e.g., amorphous silicon with or without small amounts of passivants such as hydrogen or fluorine) may be subjected to rapid thermal annealing to reduce defects by driving off excess hydrogen, and optionally partially crystallizing the material.
摘要翻译：用于超导装置的互连结构使用具有高熔点的材料用于超导布线; 实例包括难熔金属如铌。由于布线耐高温，所以层间电介质（例如，具有或不含少量钝化剂如氢或氟的非晶硅）可以进行快速热退火，以通过排除多余的氢来降低缺陷，并且可选地部分结晶材料。

8. 发明申请

US20150176124A1 Methods for Rapid Generation of ALD Saturation Curves Using Segmented Spatial ALD 审中-公开
标题翻译：使用分段空间ALD快速生成ALD饱和曲线的方法
公开(公告)号：US20150176124A1
公开(公告)日：2015-06-25
申请号：US14135266
申请日：2013-12-19
申请人： Intermolecular, Inc.
发明人： Frank Greer , Khaled Ahmed , Chen-An Chen , Wenxian Zhu
IPC分类号： C23C16/455 , C23C16/52
CPC分类号： C23C16/45551
摘要： Systems and methods for rapid generation of ALD saturation curves using segmented spatial ALD are disclosed. Methods include introducing a substrate, having a plurality of substrate segment regions, into a processing chamber. The substrate may be disposed upon a pedestal within the chamber. Sequentially exposing the plurality of segment regions to a precursor within the chamber at a first processing temperature. Afterwards, purging the precursor from the chamber and then sequentially exposing each plurality of segment regions to a reactant within the chamber at the first processing temperature. Afterwards, purging the reactant from the chamber. Repeat sequentially exposing the plurality of segment regions to the precursor and the reactant for a plurality of cycles. Each segment region may be sequentially exposed to the precursor for a unique processing time. The pedestal may be rotated prior to exposing each next segment region to the precursor and the reactant.
摘要翻译：公开了使用分段空间ALD快速产生ALD饱和曲线的系统和方法。方法包括将具有多个衬底段区域的衬底引入处理室。衬底可以设置在腔室内的基座上。在第一处理温度下将多个区段区域顺序暴露于室内的前体。然后，从室中吹扫前体，然后在第一处理温度下将每个多个区段顺序地暴露于室内的反应物。之后，从反应室中清除反应物。重复连续暴露多个段区域到前体和反应物多个循环。每个段区域可以顺序地暴露于前体以获得独特的处理时间。在将每个下一个区段暴露于前体和反应物之前，基座可以旋转。

9. 发明申请

US20140134849A1 Combinatorial Site Isolated Plasma Assisted Deposition 审中-公开
标题翻译：组合场隔离等离子体辅助沉积
公开(公告)号：US20140134849A1
公开(公告)日：2014-05-15
申请号：US13672840
申请日：2012-11-09
申请人： INTERMOLECULAR INC.
发明人： Sandip Niyogi , Owen Ho Yin Fong , Sunil Shanker , ShouQian Shao , Jingang Su , J. Watanabe , Wenxian Zhu
IPC分类号： C23C16/458 , H01L21/02
CPC分类号： C23C16/04 , C23C16/4584
摘要： An apparatus that includes a base, a sidewall extending from the base, and a lid disposed over a top of the sidewall is provided. A plasma generating source extends through a surface of the lid. A rotatable substrate support is disposed within the chamber above a surface of the base, the rotatable substrate support operable to vertically translate from the base to the lid. A first fluid inlet extends into a first surface of the sidewall and a second fluid inlet extends into a second surface of the sidewall. The plasma generating source provides a plasma activated species to a region of a surface of a substrate supported on the rotatable substrate support and a fluid delivered proximate to the region from one of the first or the second fluid inlet interacts with the plasma activated species to deposit a layer of material over the region.
摘要翻译：提供一种装置，其包括基座，从基座延伸的侧壁和设置在侧壁顶部上的盖。等离子体产生源延伸穿过盖的表面。可旋转的基板支撑件设置在基座的表面之上的腔室内，可旋转的基底支撑件可操作以从基座垂直平移到盖子。第一流体入口延伸到侧壁的第一表面中，并且第二流体入口延伸到侧壁的第二表面中。等离子体产生源将等离子体激活的物质提供到支撑在可旋转基底支撑件上的基底的表面的区域，并且靠近该区域的流体从第一或第二流体入口中的一个流体与等离子体活化物质相互作用而沉积在该地区的一层材料。

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