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    • 2. 发明授权
    • Thermally decoupled micro-structured reference element for sensors
    • 用于传感器的热分解微结构参考元件
    • US08556504B2
    • 2013-10-15
    • US13061670
    • 2009-07-02
    • Ingo HerrmannDaniel HerrmannFrank FreundAndo FeyhMartin Eckardt
    • Ingo HerrmannDaniel HerrmannFrank FreundAndo FeyhMartin Eckardt
    • G01K7/00B32B3/00
    • H01L27/14669G01J5/02G01J5/0225G01J5/024G01J5/06G01J5/20H01L31/09
    • A micro-structured reference element for use in a sensor having a substrate and a dielectric membrane. The reference element has an electrical property which changes its value on the basis of temperature. The reference element is arranged with respect to the substrate so that the reference element is (i) electrically insulated from the substrate, and (ii) thermally coupled to the substrate. The reference element is arranged on the underside of the dielectric membrane. The reference element and side walls of the substrate define a circumferential cavern therebetween, which is also bounded by the dielectric membrane, arranged between them. The dielectric membrane is connected to the substrate. A surface area of the reference element which is covered by the dielectric membrane is greater than or equal to 10% and less than or equal to 100% of the possible coverable surface area. A surface of the cavern which is covered by the dielectric membrane is greater than or equal to 50% and less than or equal to 100% of the possible coverable surface. An edge of the reference element which faces the dielectric membrane has greater than or equal to 50% and less than or equal to 100% of its extent contacted by the dielectric membrane. Sections of the side walls of the cavern which face the dielectric membrane have greater than or equal to 50% and less than or equal to 100% of the possible size contacted by the dielectric membrane.
    • 一种用于具有基底和电介质膜的传感器中的微结构参考元件。 参考元件具有基于温度改变其值的电性质。 参考元件相对于衬底布置,使得参考元件(i)与衬底电绝缘,和(ii)热耦合到衬底。 参考元件布置在电介质膜的下侧。 衬底的参考元件和侧壁在它们之间限定周向的洞穴,它们也被布置在它们之间的电介质膜界定。 电介质膜与基板连接。 由电介质膜覆盖的参考元件的表面积大于或等于可能可覆盖表面积的10%且小于或等于100%。 由电介质膜覆盖的洞穴的表面大于或等于可能可覆盖表面的50%且小于或等于100%。 面向电介质膜的参考元件的边缘具有大于或等于其与电介质膜接触的程度的50%且小于或等于100%。 面向电介质膜的洞穴的侧壁的截面具有大于或等于电介质膜接触的可能尺寸的50%且小于或等于100%。
    • 3. 发明申请
    • Thermally Decoupled Micro-Structured Reference Element for Sensors
    • 用于传感器的热解耦微结构参考元件
    • US20110211613A1
    • 2011-09-01
    • US13061670
    • 2009-07-02
    • Ingo HerrmannDaniel HerrmannFrank FreundAndo FeyhMartin Eckardt
    • Ingo HerrmannDaniel HerrmannFrank FreundAndo FeyhMartin Eckardt
    • G01K7/01
    • H01L27/14669G01J5/02G01J5/0225G01J5/024G01J5/06G01J5/20H01L31/09
    • A micro-structured reference element for use in a sensor having a substrate and a dielectric membrane. The reference element has an electrical property which changes its value on the basis of temperature. The reference element is arranged with respect to the substrate so that the reference element is (i) electrically insulated from the substrate, and (ii) thermally coupled to the substrate. The reference element is arranged on the underside of the dielectric membrane. The reference element and side walls of the substrate define a circumferential cavern therebetween, which is also bounded by the dielectric membrane, arranged between them. The dielectric membrane is connected to the substrate. A surface area of the reference element which is covered by the dielectric membrane is greater than or equal to 10% and less than or equal to 100% of the possible coverable surface area. A surface of the cavern which is covered by the dielectric membrane is greater than or equal to 50% and less than or equal to 100% of the possible coverable surface. An edge of the reference element which faces the dielectric membrane has greater than or equal to 50% and less than or equal to 100% of its extent contacted by the dielectric membrane. Sections of the side walls of the cavern which face the dielectric membrane have greater than or equal to 50% and less than or equal to 100% of the possible size contacted by the dielectric membrane.
    • 一种用于具有基底和电介质膜的传感器中的微结构参考元件。 参考元件具有基于温度改变其值的电性质。 参考元件相对于衬底布置,使得参考元件(i)与衬底电绝缘,和(ii)热耦合到衬底。 参考元件布置在电介质膜的下侧。 衬底的参考元件和侧壁在它们之间限定周向的洞穴,它们也被布置在它们之间的电介质膜界定。 电介质膜与基板连接。 由电介质膜覆盖的参考元件的表面积大于或等于可能可覆盖表面积的10%且小于或等于100%。 由电介质膜覆盖的洞穴的表面大于或等于可能可覆盖表面的50%且小于或等于100%。 面向电介质膜的参考元件的边缘具有大于或等于其与电介质膜接触的程度的50%且小于或等于100%。 面向电介质膜的洞穴的侧壁的截面具有大于或等于电介质膜接触的可能尺寸的50%且小于或等于100%。
    • 6. 发明申请
    • MAGNETORESISTIVE SENSOR ELEMENT AND METHOD FOR REDUCING THE ANGULAR ERROR OF A MAGNETORESISTIVE SENSOR ELEMENT
    • 用于减小磁传感器元件的角度误差的磁传感器元件和方法
    • US20060152218A1
    • 2006-07-13
    • US10535475
    • 2003-10-09
    • Peter SchmollngruberIngo HerrmannHenrik SiegleHartmut KittelPaul FarberUlrich May
    • Peter SchmollngruberIngo HerrmannHenrik SiegleHartmut KittelPaul FarberUlrich May
    • G01R33/02
    • B82Y25/00G01R33/093
    • A magnetoresistive sensor element is provided, having a magnetoresistive layer system which, in top view, is at least regionally striated. The sensor element operates on the basis of the GMR effect and is constructed according to the spin valve principle, the striated layer system featuring a reference layer having a direction of magnetization substantially uninfluenced by a direction of an outer magnetic field acting on it. During operation, the sensor element provides a measuring signal which changes as a function of a measurement angle between the component of the field strength of the outer magnetic field lying in the plane of the layer system, and the direction of magnetization, and from which this measurement angle is able to be ascertained. In addition, observed in a top view of the striated layer system, the angle between the direction of magnetization in the absence of the outer magnetic field and the longitudinal direction of the striated layer system is set in such a way that in response to an influence of the outer magnetic field having a defined field strength, which is selected from a predefined work interval, the angle error of the layer system, as a function of this angle and the field strength, is minimal.
    • 提供了一种磁阻传感器元件,具有磁阻层系统,其在顶视图中至少是区域性条纹化的。 传感器元件基于GMR效应进行操作,并且根据自旋阀原理构造,具有参考层的条纹层系统具有基本上不受作用在其上的外部磁场的方向的磁化方向的磁化方向。 在操作期间,传感器元件提供测量信号,该测量信号根据位于层系统的平面中的外部磁场的场强的分量与磁化方向之间的测量角度而变化,并且由此 可以确定测量角度。 此外,在条纹层系统的俯视图中观察到,在没有外磁场的磁化方向与条纹层系统的纵向方向之间的角度被设定为响应于影响 具有定义的场强的外部磁场,其从预定义的工作间隔中选择,层系统的角度误差作为该角度和场强的函数是最小的。