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1. 发明授权

US07553726B2 Method of fabricating nonvolatile memory device 失效
标题翻译：制造非易失性存储器件的方法
公开(公告)号：US07553726B2
公开(公告)日：2009-06-30
申请号：US11505355
申请日：2006-08-17
申请人： In-gu Yoon , Chul-soon Kwon , Jae-won Um , Jung-ho Moon
发明人： In-gu Yoon , Chul-soon Kwon , Jae-won Um , Jung-ho Moon
IPC分类号： H01L21/336 , H01L21/8238
CPC分类号： H01L27/115 , H01L27/11521
摘要： A method of fabricating nonvolatile memory devices may involve forming separate floating gates on a semiconductor substrate, forming control gates on the semiconductor substrate, conformally forming a buffer film on a surface of the semiconductor substrate, injecting ions into the semiconductor substrate between the pairs of the floating gates to form a common source region partially overlapping each floating gate of the respective pair of the floating gates, depositing an insulating film on the buffer film, etching the buffer film and the insulating film at side walls of the floating gates and the control gates to form spacers at the side walls of the floating gates and the control gates, and forming a drain region in the semiconductor substrate at a side of the control gate other than a side of the control gate where the common source region is formed.
摘要翻译：制造非易失性存储器件的方法可以包括在半导体衬底上形成分离的浮置栅极，在半导体衬底上形成控制栅极，在半导体衬底的表面上保形地形成缓冲膜，将离子注入半导体衬底浮置栅极，形成与各对浮置栅极的每个浮置栅极部分重叠的共同源极区域，在缓冲膜上沉积绝缘膜，在浮置栅极和控制栅极的侧壁处蚀刻缓冲膜和绝缘膜在浮置栅极和控制栅极的侧壁处形成间隔物，并且在除了形成公共源极区域的控制栅极的一侧之外的控制栅极的一侧的半导体衬底中形成漏极区域。

2. 发明申请

US20070048924A1 Method of fabricating nonvolatile memory device 失效
标题翻译：制造非易失性存储器件的方法
公开(公告)号：US20070048924A1
公开(公告)日：2007-03-01
申请号：US11505355
申请日：2006-08-17
申请人： In-gu Yoon , Chul-soon Kwon , Jae-won Um , Jung-ho Moon
发明人： In-gu Yoon , Chul-soon Kwon , Jae-won Um , Jung-ho Moon
IPC分类号： H01L21/8238
CPC分类号： H01L27/115 , H01L27/11521
摘要： A method of fabricating nonvolatile memory devices may involve forming separate floating gates on a semiconductor substrate, forming control gates on the semiconductor substrate, conformally forming a buffer film on a surface of the semiconductor substrate, injecting ions into the semiconductor substrate between the pairs of the floating gates to form a common source region partially overlapping each floating gate of the respective pair of the floating gates, depositing an insulating film on the buffer film, etching the buffer film and the insulating film at side walls of the floating gates and the control gates to form spacers at the side walls of the floating gates and the control gates, and forming a drain region in the semiconductor substrate at a side of the control gate other than a side of the control gate where the common source region is formed.
摘要翻译：制造非易失性存储器件的方法可以包括在半导体衬底上形成分离的浮置栅极，在半导体衬底上形成控制栅极，在半导体衬底的表面上保形地形成缓冲膜，将离子注入半导体衬底浮置栅极，形成与各对浮置栅极的每个浮置栅极部分重叠的共同源极区域，在缓冲膜上沉积绝缘膜，在浮置栅极和控制栅极的侧壁处蚀刻缓冲膜和绝缘膜在浮置栅极和控制栅极的侧壁处形成间隔物，并且在除了形成公共源极区域的控制栅极的一侧之外的控制栅极的一侧的半导体衬底中形成漏极区域。

3. 发明申请

US20050063208A1 Methods of fabricating flash memory cell having split-gate structure using spacer oxidation process 失效
标题翻译：使用间隔物氧化工艺制造具有分裂栅极结构的闪存单元的方法
公开(公告)号：US20050063208A1
公开(公告)日：2005-03-24
申请号：US10840803
申请日：2004-05-07
申请人： Jae-Hyun Park , Jae-Min Yu , Chul-Soon Kwon , In-gu Yoon , Eung-yung Ahn , Jung-ho Moon , Yong-Sun Lee , Sung-Yung Jeon
发明人： Jae-Hyun Park , Jae-Min Yu , Chul-Soon Kwon , In-gu Yoon , Eung-yung Ahn , Jung-ho Moon , Yong-Sun Lee , Sung-Yung Jeon
IPC分类号： H01L21/8247 , G11C11/42 , G11C16/04 , H01L21/28 , H01L21/336 , H01L27/115 , H01L29/423 , H01L29/788 , H01L29/792
CPC分类号： H01L29/66825 , G11C16/0425 , H01L21/28273 , H01L29/42324 , H01L29/7885
摘要： There is provided a method of fabricating a split-gate flash memory cell using a spacer oxidation process. An oxidation barrier layer is formed on a floating gate layer, and an opening to expose a portion of the floating gate layer is formed in the oxidation barrier layer. Subsequently, a spacer is formed on a sidewall of the opening with a material layer having insulation property by oxidizing, and an inter-gate oxide layer pattern between a floating gate and a control gate is formed in the opening while the spacer is oxidized by performing an oxidation process.
摘要翻译：提供了使用间隔物氧化工艺制造分裂栅极闪存单元的方法。在浮栅层上形成氧化阻挡层，在氧化阻挡层中形成露出浮栅的一部分的开口。随后，通过氧化形成具有绝缘性的材料层的开口的侧壁上的间隔物，并且在开口中形成浮栅和控制栅之间的栅间氧化层图案，同时通过执行氧化过程。

4. 发明授权

US07560765B2 Nonvolatile memory device and method of fabricating the same 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US07560765B2
公开(公告)日：2009-07-14
申请号：US11624464
申请日：2007-01-18
申请人： Jung-ho Moon , Chul-soon Kwon , Jae-min Yu , Jae-hyun Park , Young-cheon Jeong , In-gu Yoon
发明人： Jung-ho Moon , Chul-soon Kwon , Jae-min Yu , Jae-hyun Park , Young-cheon Jeong , In-gu Yoon
IPC分类号： H01L29/788
CPC分类号： H01L29/42324 , H01L27/115 , H01L27/11521 , H01L29/7885
摘要： A nonvolatile memory device includes a semiconductor substrate; a source region that is formed in the semiconductor substrate; a gate insulating film that is formed so as to partially overlap the source region on the semiconductor substrate; a floating gate that is formed on the gate insulating film so as to have a structure forming a uniform electric field in the portion that overlaps the source region; a control gate that is formed so as to be electrically isolated along one sidewall of the floating gate from an upper part of the floating gate, an inter-gate insulating film that is interposed between the floating gate and the control gate, and a drain region that is formed so as to be adjacent the other side of the control gate.
摘要翻译：非易失性存储器件包括半导体衬底; 源区域，其形成在所述半导体衬底中; 形成为与半导体衬底上的源极区域重叠的栅极绝缘膜; 形成在所述栅极绝缘膜上的浮栅，以具有在与所述源极区重叠的部分中形成均匀电场的结构; 形成为从浮置栅极的上部的浮动栅极的一个侧壁电绝缘的控制栅极，插入在浮置栅极和控制栅极之间的栅极间绝缘膜，以及漏极区域其形成为与控制栅极的另一侧相邻。

5. 发明申请

US20070170490A1 NONVOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20070170490A1
公开(公告)日：2007-07-26
申请号：US11624464
申请日：2007-01-18
申请人： Jung-ho Moon , Chul-soon Kwon , Jae-min Yu , Jae-hyun Park , Young-cheon Jeong , In-gu Yoon
发明人： Jung-ho Moon , Chul-soon Kwon , Jae-min Yu , Jae-hyun Park , Young-cheon Jeong , In-gu Yoon
IPC分类号： H01L29/788 , H01L21/8238
CPC分类号： H01L29/42324 , H01L27/115 , H01L27/11521 , H01L29/7885
摘要： A nonvolatile memory device includes a semiconductor substrate; a source region that is formed in the semiconductor substrate; a gate insulating film that is formed so as to partially overlap the source region on hte semiconductor substrate; a floating gate that is formed on the gate insulating film so as to have a structure forming a uniform electric field in the portion that overlaps the source region; a control gate that is formed so as to be elecrically isolated along one sidewall of the floating gate from an upper part of the floating gate, an inter-gate insulating film that is interposed between the floating gate and the control gate, and a drain region that is formed so as to be adjacent the other side of the control gate.
摘要翻译：非易失性存储器件包括半导体衬底; 源区域，其形成在所述半导体衬底中; 形成为与半导体衬底上的源极区域重叠的栅极绝缘膜; 形成在所述栅极绝缘膜上的浮栅，以具有在与所述源极区重叠的部分中形成均匀电场的结构; 形成为从浮置栅极的上部的浮动栅极的一个侧壁电隔离的控制栅极，插入在浮置栅极和控制栅极之间的栅极间绝缘膜，以及漏极区域其形成为与控制栅极的另一侧相邻。

6. 发明授权

US07115470B2 Methods of fabricating flash memory cell having split-gate structure using spacer oxidation process 失效
标题翻译：使用间隔物氧化工艺制造具有分裂栅极结构的闪存单元的方法
公开(公告)号：US07115470B2
公开(公告)日：2006-10-03
申请号：US10840803
申请日：2004-05-07
申请人： Jae-Hyun Park , Jae-Min Yu , Chul-Soon Kwon , In-gu Yoon , Eung-yung Ahn , Jung-ho Moon , Yong-Sun Lee , Sung-Yung Jeon
发明人： Jae-Hyun Park , Jae-Min Yu , Chul-Soon Kwon , In-gu Yoon , Eung-yung Ahn , Jung-ho Moon , Yong-Sun Lee , Sung-Yung Jeon
IPC分类号： H01L21/336
CPC分类号： H01L29/66825 , G11C16/0425 , H01L21/28273 , H01L29/42324 , H01L29/7885
摘要： There is provided a method of fabricating a split-gate flash memory cell using a spacer oxidation process. An oxidation barrier layer is formed on a floating gate layer, and an opening to expose a portion of the floating gate layer is formed in the oxidation barrier layer. Subsequently, a spacer is formed on a sidewall of the opening with a material layer having insulation property by oxidizing, and an inter-gate oxide layer pattern between a floating gate and a control gate is formed in the opening while the spacer is oxidized by performing an oxidation process.
摘要翻译：提供了使用间隔物氧化工艺制造分裂栅极闪存单元的方法。在浮栅层上形成氧化阻挡层，在氧化阻挡层中形成露出浮栅的一部分的开口。随后，通过氧化形成具有绝缘性的材料层的开口的侧壁上的间隔物，并且在开口中形成浮栅和控制栅之间的栅间氧化层图案，同时通过执行氧化过程。

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