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    • 1. 发明授权
    • Method of fabricating nonvolatile memory device
    • 制造非易失性存储器件的方法
    • US07553726B2
    • 2009-06-30
    • US11505355
    • 2006-08-17
    • In-gu YoonChul-soon KwonJae-won UmJung-ho Moon
    • In-gu YoonChul-soon KwonJae-won UmJung-ho Moon
    • H01L21/336H01L21/8238
    • H01L27/115H01L27/11521
    • A method of fabricating nonvolatile memory devices may involve forming separate floating gates on a semiconductor substrate, forming control gates on the semiconductor substrate, conformally forming a buffer film on a surface of the semiconductor substrate, injecting ions into the semiconductor substrate between the pairs of the floating gates to form a common source region partially overlapping each floating gate of the respective pair of the floating gates, depositing an insulating film on the buffer film, etching the buffer film and the insulating film at side walls of the floating gates and the control gates to form spacers at the side walls of the floating gates and the control gates, and forming a drain region in the semiconductor substrate at a side of the control gate other than a side of the control gate where the common source region is formed.
    • 制造非易失性存储器件的方法可以包括在半导体衬底上形成分离的浮置栅极,在半导体衬底上形成控制栅极,在半导体衬底的表面上保形地形成缓冲膜,将离子注入半导体衬底 浮置栅极,形成与各对浮置栅极的每个浮置栅极部分重叠的共同源极区域,在缓冲膜上沉积绝缘膜,在浮置栅极和控制栅极的侧壁处蚀刻缓冲膜和绝缘膜 在浮置栅极和控制栅极的侧壁处形成间隔物,并且在除了形成公共源极区域的控制栅极的一侧之外的控制栅极的一侧的半导体衬底中形成漏极区域。
    • 2. 发明申请
    • Method of fabricating nonvolatile memory device
    • 制造非易失性存储器件的方法
    • US20070048924A1
    • 2007-03-01
    • US11505355
    • 2006-08-17
    • In-gu YoonChul-soon KwonJae-won UmJung-ho Moon
    • In-gu YoonChul-soon KwonJae-won UmJung-ho Moon
    • H01L21/8238
    • H01L27/115H01L27/11521
    • A method of fabricating nonvolatile memory devices may involve forming separate floating gates on a semiconductor substrate, forming control gates on the semiconductor substrate, conformally forming a buffer film on a surface of the semiconductor substrate, injecting ions into the semiconductor substrate between the pairs of the floating gates to form a common source region partially overlapping each floating gate of the respective pair of the floating gates, depositing an insulating film on the buffer film, etching the buffer film and the insulating film at side walls of the floating gates and the control gates to form spacers at the side walls of the floating gates and the control gates, and forming a drain region in the semiconductor substrate at a side of the control gate other than a side of the control gate where the common source region is formed.
    • 制造非易失性存储器件的方法可以包括在半导体衬底上形成分离的浮置栅极,在半导体衬底上形成控制栅极,在半导体衬底的表面上保形地形成缓冲膜,将离子注入半导体衬底 浮置栅极,形成与各对浮置栅极的每个浮置栅极部分重叠的共同源极区域,在缓冲膜上沉积绝缘膜,在浮置栅极和控制栅极的侧壁处蚀刻缓冲膜和绝缘膜 在浮置栅极和控制栅极的侧壁处形成间隔物,并且在除了形成公共源极区域的控制栅极的一侧之外的控制栅极的一侧的半导体衬底中形成漏极区域。