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1. 发明授权

US08878152B2 Nonvolatile resistive memory element with an integrated oxygen isolation structure 有权
标题翻译：具有集成氧隔离结构的非易失性电阻式存储元件
公开(公告)号：US08878152B2
公开(公告)日：2014-11-04
申请号：US13408103
申请日：2012-02-29
申请人： Yun Wang , Tony P. Chiang , Imran Hashim , Dipankar Pramanik
发明人： Yun Wang , Tony P. Chiang , Imran Hashim , Dipankar Pramanik
IPC分类号： H01L29/02
CPC分类号： H01L45/16 , H01L27/2463 , H01L45/10 , H01L45/12 , H01L45/1233 , H01L45/146 , H01L45/1675
摘要： A nonvolatile resistive memory element includes one or more novel oxygen isolation structures that protect the resistive switching material of the memory element from oxygen migration. One such oxygen isolation structure comprises an oxygen barrier layer that isolates the resistive switching material from other portions of the resistive memory device during fabrication and/or operation of the memory device. Another such oxygen isolation structure comprises a sacrificial layer that reacts with unwanted oxygen migrating toward the resistive switching material during fabrication and/or operation of the memory device.
摘要翻译：非易失性电阻存储元件包括一个或多个新颖的氧隔离结构，其保护存储元件的电阻开关材料免于氧迁移。一个这样的氧隔离结构包括氧阻隔层，其在制造和/或操作存储器件期间将电阻性开关材料与电阻式存储器件的其它部分隔离。另一种这样的氧隔离结构包括牺牲层，其在存储器件的制造和/或操作期间与向电阻开关材料迁移的不想要的氧化反应。

2. 发明申请

US20130221307A1 NONVOLATILE RESISTIVE MEMORY ELEMENT WITH AN INTEGRATED OXYGEN ISOLATION STRUCTURE 有权
标题翻译：具有一体化氧分离结构的非挥发性电阻记忆元件
公开(公告)号：US20130221307A1
公开(公告)日：2013-08-29
申请号：US13408103
申请日：2012-02-29
申请人： Yun Wang , Tony P. Chiang , Imran Hashim , Dipankar Pramanik
发明人： Yun Wang , Tony P. Chiang , Imran Hashim , Dipankar Pramanik
IPC分类号： H01L45/00
CPC分类号： H01L45/16 , H01L27/2463 , H01L45/10 , H01L45/12 , H01L45/1233 , H01L45/146 , H01L45/1675
摘要： A nonvolatile resistive memory element includes one or more novel oxygen isolation structures that protect the resistive switching material of the memory element from oxygen migration. One such oxygen isolation structure comprises an oxygen barrier layer that isolates the resistive switching material from other portions of the resistive memory device during fabrication and/or operation of the memory device. Another such oxygen isolation structure comprises a sacrificial layer that reacts with unwanted oxygen migrating toward the resistive switching material during fabrication and/or operation of the memory device.
摘要翻译：非易失性电阻存储元件包括一个或多个新颖的氧隔离结构，其保护存储元件的电阻开关材料免于氧迁移。一个这样的氧隔离结构包括氧阻隔层，其在制造和/或操作存储器件期间将电阻性开关材料与电阻式存储器件的其它部分隔离。另一种这样的氧隔离结构包括牺牲层，其在存储器件的制造和/或操作期间与向电阻开关材料迁移的不想要的氧化反应。

3. 发明授权

US08466446B2 Atomic layer deposition of metal oxide materials for memory applications 有权
公开(公告)号：US08466446B2
公开(公告)日：2013-06-18
申请号：US13612000
申请日：2012-09-12
申请人： Yun Wang , Vidyut Gopal , Imran Hashim , Dipankar Pramanik , Tony Chiag
发明人： Yun Wang , Vidyut Gopal , Imran Hashim , Dipankar Pramanik , Tony Chiag
IPC分类号： H01L47/00
CPC分类号： H01L45/145 , C23C16/40 , C23C16/45525 , H01L21/02175 , H01L21/02178 , H01L21/02181 , H01L21/02186 , H01L21/02189 , H01L21/02192 , H01L21/02194 , H01L21/022 , H01L21/0228 , H01L27/2463 , H01L45/08 , H01L45/1266 , H01L45/146 , H01L45/1608 , H01L45/1616
摘要： Embodiments of the invention generally relate to nonvolatile memory devices, such as a ReRAM cells, and methods for manufacturing such memory devices, which includes optimized, atomic layer deposition (ALD) processes for forming metal oxide film stacks. The metal oxide film stacks contain a metal oxide coupling layer disposed on a metal oxide host layer, each layer having different grain structures/sizes. The interface disposed between the metal oxide layers facilitates oxygen vacancy movement. In many examples, the interface is a misaligned grain interface containing numerous grain boundaries extending parallel to the electrode interfaces, in contrast to the grains in the bulk film extending perpendicular to the electrode interfaces. As a result, oxygen vacancies are trapped and released during switching without significant loss of vacancies. Therefore, the metal oxide film stacks have improved switching performance and reliability during memory cell applications compared to traditional hafnium oxide based stacks of previous memory cells.

4. 发明授权

US08779407B2 Multifunctional electrode 有权
公开(公告)号：US08779407B2
公开(公告)日：2014-07-15
申请号：US13367662
申请日：2012-02-07
申请人： Hieu Pham , Vidyut Gopal , Imran Hashim , Dipankar Pramanik , Yun Wang , Hong Sheng Yang
发明人： Hieu Pham , Vidyut Gopal , Imran Hashim , Dipankar Pramanik , Yun Wang , Hong Sheng Yang
IPC分类号： H01L29/02
CPC分类号： C23C14/345 , C23C14/0042 , C23C14/0641 , C23C14/083 , C23C14/225 , H01L27/2409 , H01L27/2463 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/1266 , H01L45/145 , H01L45/146 , H01L45/16 , H01L45/1608 , H01L45/1616 , H01L45/1625
摘要： A nonvolatile memory element is disclosed comprising a first electrode, a near-stoichiometric metal oxide memory layer having bistable resistance, and a second electrode in contact with the near-stoichiometric metal oxide memory layer. At least one electrode is a resistive electrode comprising a sub-stoichiometric transition metal nitride or oxynitride, and has a resistivity between 0.1 and 10 Ωcm. The resistive electrode provides the functionality of an embedded current-limiting resistor and also serves as a source and sink of oxygen vacancies for setting and resetting the resistance state of the metal oxide layer. Novel fabrication methods for the second electrode are also disclosed.

5. 发明申请

US20130071984A1 ATOMIC LAYER DEPOSITION OF HAFNIUM AND ZIRCONIUM OXIDES FOR MEMORY APPLICATIONS 有权
标题翻译：用于存储器应用的铪和氧化锆的原子层沉积
公开(公告)号：US20130071984A1
公开(公告)日：2013-03-21
申请号：US13236481
申请日：2011-09-19
申请人： Yun Wang , Vidyut Gopal , Imran Hashim , Dipankar Pramanik , Tony Chiang
发明人： Yun Wang , Vidyut Gopal , Imran Hashim , Dipankar Pramanik , Tony Chiang
IPC分类号： H01L45/00
CPC分类号： H01L45/146 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/1616
摘要： Embodiments of the invention generally relate to nonvolatile memory devices and methods for manufacturing such memory devices. The methods for forming improved memory devices, such as a ReRAM cells, provide optimized, atomic layer deposition (ALD) processes for forming a metal oxide film stack having a metal oxide buffer layer disposed on or over a metal oxide bulk layer. The metal oxide bulk layer contains a metal-rich oxide material and the metal oxide buffer layer contains a metal-poor oxide material. The metal oxide bulk layer is less electrically resistive than the metal oxide buffer layer since the metal oxide bulk layer is less oxidized or more metallic than the metal oxide buffer layer. In one example, the metal oxide bulk layer contains a metal-rich hafnium oxide material and the metal oxide buffer layer contains a metal-poor zirconium oxide material.
摘要翻译：本发明的实施例一般涉及用于制造这种存储器件的非易失性存储器件和方法。用于形成改进的存储器件（例如ReRAM单元）的方法提供优化的原子层沉积（ALD）工艺，用于形成金属氧化物膜堆叠，其具有设置在金属氧化物本体层上或其上的金属氧化物缓冲层。金属氧化物本体层含有富金属氧化物材料，金属氧化物缓冲层含有贫金属氧化物。由于金属氧化物本体层比金属氧化物缓冲层氧化较少或更金属，所以金属氧化物本体层的电阻小于金属氧化物缓冲层的电阻。在一个实例中，金属氧化物本体层含有富金属氧化铪材料，金属氧化物缓冲层含有贫金属氧化锆材料。

6. 发明授权

US08546275B2 Atomic layer deposition of hafnium and zirconium oxides for memory applications 有权
标题翻译：用于记忆应用的铪和锆氧化物的原子层沉积
公开(公告)号：US08546275B2
公开(公告)日：2013-10-01
申请号：US13236481
申请日：2011-09-19
申请人： Yun Wang , Vidyut Gopal , Imran Hashim , Dipankar Pramanik , Tony Chiang
发明人： Yun Wang , Vidyut Gopal , Imran Hashim , Dipankar Pramanik , Tony Chiang
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L45/146 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/1616
摘要： Embodiments of the invention generally relate to nonvolatile memory devices and methods for manufacturing such memory devices. The methods for forming improved memory devices, such as a ReRAM cells, provide optimized, atomic layer deposition (ALD) processes for forming a metal oxide film stack having a metal oxide buffer layer disposed on or over a metal oxide bulk layer. The metal oxide bulk layer contains a metal-rich oxide material and the metal oxide buffer layer contains a metal-poor oxide material. The metal oxide bulk layer is less electrically resistive than the metal oxide buffer layer since the metal oxide bulk layer is less oxidized or more metallic than the metal oxide buffer layer. In one example, the metal oxide bulk layer contains a metal-rich hafnium oxide material and the metal oxide buffer layer contains a metal-poor zirconium oxide material.
摘要翻译：本发明的实施例一般涉及用于制造这种存储器件的非易失性存储器件和方法。用于形成改进的存储器件（例如ReRAM单元）的方法提供优化的原子层沉积（ALD）工艺，用于形成金属氧化物膜堆叠，其具有设置在金属氧化物本体层上或其上的金属氧化物缓冲层。金属氧化物本体层含有富金属氧化物材料，金属氧化物缓冲层含有贫金属氧化物。由于金属氧化物本体层比金属氧化物缓冲层氧化较少或更金属，所以金属氧化物本体层的电阻小于金属氧化物缓冲层的电阻。在一个实例中，金属氧化物本体层含有富金属氧化铪材料，金属氧化物缓冲层含有贫金属氧化锆材料。

7. 发明申请

US20130200323A1 MULTIFUNCTIONAL ELECTRODE 有权
标题翻译：多功能电极
公开(公告)号：US20130200323A1
公开(公告)日：2013-08-08
申请号：US13367662
申请日：2012-02-07
申请人： Hieu Pham , Vidyut Gopal , Imran Hashim , Dipankar Pramanik , Yun Wang , Hong Sheng Yang
发明人： Hieu Pham , Vidyut Gopal , Imran Hashim , Dipankar Pramanik , Yun Wang , Hong Sheng Yang
IPC分类号： H01L45/00
CPC分类号： C23C14/345 , C23C14/0042 , C23C14/0641 , C23C14/083 , C23C14/225 , H01L27/2409 , H01L27/2463 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/1266 , H01L45/145 , H01L45/146 , H01L45/16 , H01L45/1608 , H01L45/1616 , H01L45/1625
摘要： A nonvolatile memory element is disclosed comprising a first electrode, a near-stoichiometric metal oxide memory layer having bistable resistance, and a second electrode in contact with the near-stoichiometric metal oxide memory layer. At least one electrode is a resistive electrode comprising a sub-stoichiometric transition metal nitride or oxynitride, and has a resistivity between 0.1 and 10 Ω cm. The resistive electrode provides the functionality of an embedded current-limiting resistor and also serves as a source and sink of oxygen vacancies for setting and resetting the resistance state of the metal oxide layer. Novel fabrication methods for the second electrode are also disclosed.
摘要翻译：公开了一种非易失性存储元件，其包括第一电极，具有双稳态电阻的近化学计量的金属氧化物存储层和与近化学计量的金属氧化物存储层接触的第二电极。至少一个电极是包括亚化学计量的过渡金属氮化物或氮氧化物的电阻电极，并且具有0.1至10Ωcm的电阻率。电阻电极提供嵌入式限流电阻器的功能，并且还用作用于设置和复位金属氧化物层的电阻状态的氧空位的源极和吸收器。还公开了用于第二电极的新颖制造方法。

8. 发明申请

US20130056702A1 ATOMIC LAYER DEPOSITION OF METAL OXIDE MATERIALS FOR MEMORY APPLICATIONS 有权
标题翻译：用于存储器应用的金属氧化物材料的原子层沉积
公开(公告)号：US20130056702A1
公开(公告)日：2013-03-07
申请号：US13612000
申请日：2012-09-12
申请人： Yun Wang , Vidyut Gopal , Imran Hashim , Dipankar Pramanik , Tony Chiang
发明人： Yun Wang , Vidyut Gopal , Imran Hashim , Dipankar Pramanik , Tony Chiang
IPC分类号： H01L45/00 , B82Y10/00 , B82Y99/00
CPC分类号： H01L45/145 , C23C16/40 , C23C16/45525 , H01L21/02175 , H01L21/02178 , H01L21/02181 , H01L21/02186 , H01L21/02189 , H01L21/02192 , H01L21/02194 , H01L21/022 , H01L21/0228 , H01L27/2463 , H01L45/08 , H01L45/1266 , H01L45/146 , H01L45/1608 , H01L45/1616
摘要： Embodiments of the invention generally relate to nonvolatile memory devices, such as a ReRAM cells, and methods for manufacturing such memory devices, which includes optimized, atomic layer deposition (ALD) processes for forming metal oxide film stacks. The metal oxide film stacks contain a metal oxide coupling layer disposed on a metal oxide host layer, each layer having different grain structures/sizes. The interface disposed between the metal oxide layers facilitates oxygen vacancy movement. In many examples, the interface is a misaligned grain interface containing numerous grain boundaries extending parallel to the electrode interfaces, in contrast to the grains in the bulk film extending perpendicular to the electrode interfaces. As a result, oxygen vacancies are trapped and released during switching without significant loss of vacancies. Therefore, the metal oxide film stacks have improved switching performance and reliability during memory cell applications compared to traditional hafnium oxide based stacks of previous memory cells.
摘要翻译：本发明的实施例一般涉及非易失性存储器件，例如ReRAM单元，以及用于制造这种存储器件的方法，其包括用于形成金属氧化物膜堆叠的优化的原子层沉积（ALD）工艺。金属氧化物膜堆叠包含设置在金属氧化物主体层上的金属氧化物耦合层，每个层具有不同的晶粒结构/尺寸。设置在金属氧化物层之间的界面有助于氧空位移动。在许多示例中，与垂直于电极界面延伸的体膜中的晶粒相反，界面是不对准的晶界，其包含平行于电极界面延伸的许多晶界。因此，氧空缺在切换期间被捕获和释放，而空位明显损失。因此，与以前的存储单元的传统的基于氧化铪的堆叠相比，金属氧化物膜堆叠在存储单元应用中具有改进的开关性能和可靠性。

9. 发明授权

US08288297B1 Atomic layer deposition of metal oxide materials for memory applications 有权
标题翻译：用于记忆应用的金属氧化物材料的原子层沉积
公开(公告)号：US08288297B1
公开(公告)日：2012-10-16
申请号：US13224021
申请日：2011-09-01
申请人： Yun Wang , Vidyut Gopal , Imran Hashim , Dipankar Pramanik , Tony Chiag
发明人： Yun Wang , Vidyut Gopal , Imran Hashim , Dipankar Pramanik , Tony Chiag
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L45/145 , C23C16/40 , C23C16/45525 , H01L21/02175 , H01L21/02178 , H01L21/02181 , H01L21/02186 , H01L21/02189 , H01L21/02192 , H01L21/02194 , H01L21/022 , H01L21/0228 , H01L27/2463 , H01L45/08 , H01L45/1266 , H01L45/146 , H01L45/1608 , H01L45/1616
摘要： Embodiments of the invention generally relate to nonvolatile memory devices, such as a ReRAM cells, and methods for manufacturing such memory devices, which includes optimized, atomic layer deposition (ALD) processes for forming metal oxide film stacks. The metal oxide film stacks contain a metal oxide coupling layer disposed on a metal oxide host layer, each layer having different grain structures/sizes. The interface disposed between the metal oxide layers facilitates oxygen vacancy movement. In many examples, the interface is a misaligned grain interface containing numerous grain boundaries extending parallel to the electrode interfaces, in contrast to the grains in the bulk film extending perpendicular to the electrode interfaces. As a result, oxygen vacancies are trapped and released during switching without significant loss of vacancies. Therefore, the metal oxide film stacks have improved switching performance and reliability during memory cell applications compared to traditional hafnium oxide based stacks of previous memory cells.
摘要翻译：本发明的实施例一般涉及非易失性存储器件，例如ReRAM单元，以及用于制造这种存储器件的方法，其包括用于形成金属氧化物膜堆叠的优化的原子层沉积（ALD）工艺。金属氧化物膜堆叠包含设置在金属氧化物主体层上的金属氧化物耦合层，每个层具有不同的晶粒结构/尺寸。设置在金属氧化物层之间的界面有助于氧空位移动。在许多示例中，与垂直于电极界面延伸的体膜中的晶粒相反，界面是不对齐的晶粒界面，其包含平行于电极界面延伸的许多晶界。因此，氧空缺在切换期间被捕获和释放，而空位明显损失。因此，与以前的存储单元的传统的基于氧化铪的堆叠相比，金属氧化物膜堆叠在存储单元应用中具有改进的开关性能和可靠性。

10. 发明授权

US08866121B2 Current-limiting layer and a current-reducing layer in a memory device 有权
标题翻译：存储器件中的限流层和电流减少层
公开(公告)号：US08866121B2
公开(公告)日：2014-10-21
申请号：US13399530
申请日：2012-02-17
申请人： Yun Wang , Tony P. Chiang , Imran Hashim
发明人： Yun Wang , Tony P. Chiang , Imran Hashim
IPC分类号： H01L47/00 , H01L29/02 , H01L29/04 , G11C13/00 , H01L45/00 , H01L27/24 , G11C11/00
CPC分类号： H01L45/145 , G11C11/00 , G11C13/00 , G11C13/0007 , G11C2213/72 , H01L27/2409 , H01L27/2463 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/146 , H01L45/1608 , H01L45/1616 , H01L45/1641
摘要： A current-limiting layer and a current-reducing layer are incorporated into a resistive switching memory device to form memory arrays. The incorporated current-limiting layer reduces the occurrence of current spikes during the programming of the resistive switching memory device and the incorporated current-reducing layer minimizes the overall current levels that can flow through the resistive switching memory device. Together, the two incorporated layers help improve device performance and lifetime.
摘要翻译：电流限制层和电流减少层被并入到电阻式开关存储器件中以形成存储器阵列。结合的限流层在电阻式开关存储器件的编程期间减少了电流尖峰的发生，并且并入的电流降低层使可流过电阻式开关存储器件的总体电流水平最小化。合并在一起的两个层次有助于提高设备性能和使用寿命。

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