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    • 1. 发明申请
    • Method of measuring thickness of thin film using infrared thermal imaging system
    • 使用红外热成像系统测量薄膜厚度的方法
    • US20050263706A1
    • 2005-12-01
    • US10869903
    • 2004-06-18
    • Il-Seok ParkSang-Min Park
    • Il-Seok ParkSang-Min Park
    • G01B11/06G01J5/00G01J5/02
    • G01B11/0658G01J5/0003G01J2005/0077G01J2005/0081
    • The present invention relates to a method of measuring the thickness of a thin film layer using an infrared thermal imaging system. The object of the present invention is to provide a method of measuring the thickness of a thin film layer fast in such a way as to obtain the two-dimensional (2-D) thickness distribution of the thin film layer at one time by measuring infrared spontaneous light emitted from a target surface using an infrared imaging camera. The present invention includes a means for measuring the thickness of a thin film coated on a flat base surface, which outputs the thickness of the thin film layer based on the emissivity of the base surface and the coating layer and the intensity of the infrared spontaneous light that is measured on the flat target surface and converted into temperature, and a means for measuring the thickness of a thin film layer coated on a curved base surface, which outputs the thickness of the thin film layer while considering directional emissivity attributable to the materials of the base surface and the coating layer.
    • 本发明涉及使用红外热成像系统测量薄膜层的厚度的方法。 本发明的目的是提供一种通过测量红外线来一次获得薄膜层的二维(2-D)厚度分布的方式来快速测量薄膜层的厚度。 使用红外成像照相机从目标表面发射的自发光。 本发明包括用于测量涂覆在平坦基面上的薄膜的厚度的装置,其基于基底表面和涂层的发射率和红外自发光的强度输出薄膜层的厚度 在平坦目标表面上测量并转换成温度,以及用于测量涂覆在弯曲基底表面上的薄膜层的厚度的装置,其输出薄膜层的厚度,同时考虑归因于材料的方向发射率 基面和涂层。
    • 2. 发明授权
    • Method of measuring thickness of thin film using infrared thermal imaging system
    • 使用红外热成像系统测量薄膜厚度的方法
    • US07075085B2
    • 2006-07-11
    • US10869903
    • 2004-06-18
    • Il-Seok ParkSang-Min Park
    • Il-Seok ParkSang-Min Park
    • G01J5/02
    • G01B11/0658G01J5/0003G01J2005/0077G01J2005/0081
    • The present invention relates to a method of measuring the thickness of a thin film layer using an infrared thermal imaging system. The object of the present invention is to provide a method of measuring the thickness of a thin film layer fast in such a way as to obtain the two-dimensional (2-D) thickness distribution of the thin film layer at one time by measuring infrared spontaneous light emitted from a target surface using an infrared imaging camera. The present invention includes a means for measuring the thickness of a thin film coated on a flat base surface, which outputs the thickness of the thin film layer based on the emissivity of the base surface and the coating layer and the intensity of the infrared spontaneous light that is measured on the flat target surface and converted into temperature, and a means for measuring the thickness of a thin film layer coated on a curved base surface, which outputs the thickness of the thin film layer while considering directional emissivity attributable to the materials of the base surface and the coating layer.
    • 本发明涉及使用红外热成像系统测量薄膜层的厚度的方法。 本发明的目的是提供一种通过测量红外线来一次获得薄膜层的二维(2-D)厚度分布的方式来快速测量薄膜层的厚度。 使用红外成像照相机从目标表面发射的自发光。 本发明包括用于测量涂覆在平坦基面上的薄膜的厚度的装置,其基于基底表面和涂层的发射率和红外自发光的强度输出薄膜层的厚度 在平坦目标表面上测量并转换成温度,以及用于测量涂覆在弯曲基底表面上的薄膜层的厚度的装置,其输出薄膜层的厚度,同时考虑归因于材料的方向发射率 基面和涂层。