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    • 8. 发明申请
    • LIGHT EMITTING DEVICE HAVING VERTICALLY STACKED LIGHT EMITTING DIODES
    • 具有垂直堆积的发光二极管的发光装置
    • US20100219426A1
    • 2010-09-02
    • US12775008
    • 2010-05-06
    • Sung Han KIMKyoung Hoon KIM
    • Sung Han KIMKyoung Hoon KIM
    • H01L27/15H01L33/02
    • H01L33/08H01L27/153
    • Disclosed is a light emitting device having vertically stacked light emitting diodes. It comprises a lower semiconductor layer of a first conductive type positioned on a substrate, a semiconductor layer of a second conductive type on the lower semiconductor layer of a first conductive type, and an upper semiconductor layer of a first conductive type on the semiconductor layer of a second conductive type. Furthermore, a lower active layer is interposed between the lower semiconductor layer of a first conductive type and the semiconductor layer of a second conductive type, and an upper active layer is interposed between the semiconductor layer of a second conductive type and the upper semiconductor layer of a first conductive type. Accordingly, there is provided a light emitting device having a structure in which a lower light emitting diode comprising the lower active layer and an upper light emitting diode comprising the upper active layer are vertically stacked. Therefore, light output per unit area of the light emitting device is enhanced as compared with a conventional light emitting device, and thus, a chip area of the light emitting device needed to obtain the same light output as the conventional light emitting device can be reduced.
    • 公开了一种具有垂直堆叠的发光二极管的发光器件。 它包括位于基板上的第一导电类型的下半导体层,在第一导电类型的下半导体层上的第二导电类型的半导体层和第一导电类型的半导体层上半导体层 第二导电类型。 此外,在第一导电类型的下半导体层和第二导电类型的半导体层之间插入下有源层,并且上有源层插入在第二导电类型的半导体层和第二导电类型的半导体层之间 第一导电类型。 因此,提供了一种发光器件,其具有如下结构,其中包括下部有源层的下部发光二极管和包括上部有源层的上部发光二极管垂直堆叠。 因此,与传统的发光器件相比,发光器件的每单位面积的光输出增强,因此可以减少获得与常规发光器件相同的光输出所需的发光器件的芯片面积 。