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1. 发明申请

US20170062327A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：US20170062327A1
公开(公告)日：2017-03-02
申请号：US15191558
申请日：2016-06-24
申请人： Kyoung-hoon KIM , Woo-sung YANG , Jee-hoon HWANG
发明人： Kyoung-hoon KIM , Woo-sung YANG , Jee-hoon HWANG
IPC分类号： H01L23/528 , H01L21/321 , H01L21/311 , H01L21/033 , H01L21/768
CPC分类号： H01L23/528 , H01L21/0332 , H01L21/0337 , H01L21/31144 , H01L21/3212 , H01L21/32139 , H01L21/76838 , H01L21/7684 , H01L21/76892 , H01L27/11517 , H01L27/11563 , H01L27/11582 , H01L28/00
摘要： A semiconductor device includes a plurality of line patterns formed apart from one another on a substrate, the plurality of line patterns having a first width and extending parallel to one another in a first direction. A first line pattern of the plurality of line patterns may include a wider portion having a second width in a second direction perpendicular to the first direction that is greater than the first width. One or more second line patterns may be located adjacent to the first line pattern and include a conformal portion conformally formed about the wider portion of the first line pattern. One or more third line patterns may be located adjacent to the second line pattern and include an end portion near the conformal portion of the one or more second line pattern.
摘要翻译：半导体器件包括在衬底上彼此分开形成的多个线图案，多个线图案具有第一宽度并且在第一方向上彼此平行延伸。多个线图案的第一线图案可以包括在垂直于大于第一宽度的第一方向的第二方向上具有第二宽度的较宽部分。可以将一个或多个第二线图案定位成与第一线图案相邻，并且包括围绕第一线图案的较宽部分共形地形成的共形部分。一个或多个第三线图案可以位于与第二线图案相邻并且包括在一个或多个第二线图案的保形部分附近的端部。

2. 发明申请

US20160343727A1 VERTICAL NAND FLASH MEMORY DEVICE 有权
标题翻译：垂直NAND闪存存储器件
公开(公告)号：US20160343727A1
公开(公告)日：2016-11-24
申请号：US14992154
申请日：2016-01-11
申请人： Kyoung-Hoon KIM , Hongsoo KIM
发明人： Kyoung-Hoon KIM , Hongsoo KIM
IPC分类号： H01L27/115 , H01L23/528
CPC分类号： H01L27/11582 , H01L27/11565 , H01L27/1157 , H01L27/11573 , H01L27/11575
摘要： Provided is a vertical NAND flash memory device. The vertical NAND flash memory device may include word lines formed on a substrate, a plurality of pads horizontally extending from the word lines, and contact plugs connected to respective pads. The contact plugs may include a first contact plug connected to a lowermost pad that is closest to the substrate, and a set of second contact plugs each second contact plug connected to a corresponding pad of the plurality of pads. A first distance between the first contact plug and a second contact plug of the set of second contact plugs that is adjacent to the first contact plug may be different from second distances between adjacent contact plugs of the set of second contact plugs. The second distances may be substantially the same as each other.
摘要翻译：提供了一种垂直NAND闪存设备。垂直NAND闪存器件可以包括形成在基板上的字线，从字线水平延伸的多个焊盘以及连接到相应焊盘的接触插头。接触插塞可以包括连接到最靠近衬底的最下垫的第一接触插塞和一组第二接触插塞，每个第二接触插塞连接到多个衬垫的相应衬垫。所述第一接触插塞和与所述第一接触插塞相邻的所述一组第二接触插塞的第二接触插塞之间的第一距离可以不同于所述一组第二接触插塞的相邻接触插塞之间的第二距离。第二距离可以彼此基本相同。

3. 发明申请

US20140070165A1 LIGHT EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20140070165A1
公开(公告)日：2014-03-13
申请号：US13906748
申请日：2013-05-31
申请人： Hae Jin Park , Kyoung Hoon Kim , Dong Ha Kim , Kwang chil Lee , Jae Hun Kim , Hwan Hui Yun
发明人： Hae Jin Park , Kyoung Hoon Kim , Dong Ha Kim , Kwang chil Lee , Jae Hun Kim , Hwan Hui Yun
IPC分类号： H01L33/06
CPC分类号： H01L33/06 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02647 , H01L33/0025 , H01L33/007 , H01L33/025 , H01L33/12 , H01L33/20 , H01L33/32 , H01L33/54 , H01L33/62 , H01L2224/14 , H01L2224/16245 , H01L2933/0091
摘要： The disclosed light emitting device includes an intermediate layer interposed between the light emitting semiconductor structure and the substrate. The light emitting semiconductor structure includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, wherein the active layer has a multi quantum well structure including at least one period of a pair structure of a quantum barrier layer including AlxGa(1−x)N (0
摘要翻译：所公开的发光器件包括介于发光半导体结构和衬底之间的中间层。发光半导体结构包括第一导电型半导体层，第二导电型半导体层和介于第一导电型半导体层和第二导电型半导体层之间的有源层，其中活性层具有包括包含Al x Ga（1-x）N（0

4. 发明授权

US08598598B2 Light emitting device having vertically stacked light emitting diodes 有权
标题翻译：具有垂直堆叠的发光二极管的发光器件
公开(公告)号：US08598598B2
公开(公告)日：2013-12-03
申请号：US12775008
申请日：2010-05-06
申请人： Sung Han Kim , Kyoung Hoon Kim
发明人： Sung Han Kim , Kyoung Hoon Kim
IPC分类号： H01L27/15
CPC分类号： H01L33/08 , H01L27/153
摘要： Disclosed is a light emitting device having vertically stacked light emitting diodes. It comprises a lower semiconductor layer of a first conductive type positioned on a substrate, a semiconductor layer of a second conductive type on the lower semiconductor layer of a first conductive type, and an upper semiconductor layer of a first conductive type on the semiconductor layer of a second conductive type. Furthermore, a lower active layer is interposed between the lower semiconductor layer of a first conductive type and the semiconductor layer of a second conductive type, and an upper active layer is interposed between the semiconductor layer of a second conductive type and the upper semiconductor layer of a first conductive type. Accordingly, there is provided a light emitting device having a structure in which a lower light emitting diode comprising the lower active layer and an upper light emitting diode comprising the upper active layer are vertically stacked. Therefore, light output per unit area of the light emitting device is enhanced as compared with a conventional light emitting device, and thus, a chip area of the light emitting device needed to obtain the same light output as the conventional light emitting device can be reduced.
摘要翻译：公开了一种具有垂直堆叠的发光二极管的发光器件。它包括位于基板上的第一导电类型的下半导体层，在第一导电类型的下半导体层上的第二导电类型的半导体层和第一导电类型的半导体层上半导体层第二导电类型。此外，在第一导电类型的下半导体层和第二导电类型的半导体层之间插入下有源层，并且上有源层插入在第二导电类型的半导体层和第二导电类型的半导体层之间第一导电类型。因此，提供了一种发光器件，其具有如下结构，其中包括下部有源层的下部发光二极管和包括上部有源层的上部发光二极管垂直堆叠。因此，与传统的发光器件相比，发光器件的每单位面积的光输出增强，因此可以减少获得与常规发光器件相同的光输出所需的发光器件的芯片面积。

5. 外观设计

USD667844S1 Digital audio system 有权
标题翻译：数字音响系统
公开(公告)号：USD667844S1
公开(公告)日：2012-09-25
申请号：US29390786
申请日：2011-04-29
申请人： Ju-Won Cho , Kyoung-Hoon Kim , Tae-Yeon Won
设计人： Ju-Won Cho , Kyoung-Hoon Kim , Tae-Yeon Won

6. 外观设计

USD663287S1 Remote controller for television receiver 有权
标题翻译：遥控器用于电视接收机
公开(公告)号：USD663287S1
公开(公告)日：2012-07-10
申请号：US29349413
申请日：2010-03-31
申请人： Kyoung-Hoon Kim , Dae-Hun Jung
设计人： Kyoung-Hoon Kim , Dae-Hun Jung

7. 发明授权

US08203211B2 Nonvolatile memory devices having a three dimensional structure 有权
标题翻译：具有三维结构的非易失性存储器件
公开(公告)号：US08203211B2
公开(公告)日：2012-06-19
申请号：US12798525
申请日：2010-04-06
申请人： Jaehun Jeong , Hansoo Kim , Jaehoon Jang , Hoosung Cho , Kyoung-Hoon Kim
发明人： Jaehun Jeong , Hansoo Kim , Jaehoon Jang , Hoosung Cho , Kyoung-Hoon Kim
IPC分类号： H01L27/115 , H01L23/522
CPC分类号： H01L27/11578 , H01L27/115 , H01L27/11517 , H01L27/11565 , H01L27/11582
摘要： Provided is a nonvolatile memory device having a three dimensional structure. The nonvolatile memory device may include cell arrays having a plurality of conductive patterns having a line shape three dimensionally arranged on a semiconductor substrate, the cell arrays being separated from one another; semiconductor patterns extending from the semiconductor substrate to cross sidewalls of the conductive patterns; common source regions provided in the semiconductor substrate under a lower portion of the semiconductor patterns in a direction in which the conductive patterns extend; a first impurity region provided in the semiconductor substrate so that the first impurity region extends in a direction crossing the conductive patterns to electrically connect the common source regions; and a first contact hole exposing a portion of the first impurity region between the separated cell arrays.
摘要翻译：具有三维结构的非易失性存储装置。非易失性存储器件可以包括具有三维布置在半导体衬底上的线形状的多个导电图案的单元阵列，单元阵列彼此分离; 从半导体衬底延伸到导电图案的横截面的半导体图案; 在所述半导体图案的下部设置在所述半导体衬底中的在所述导电图案延伸的方向上的公共源极区; 设置在所述半导体衬底中的第一杂质区域，使得所述第一杂质区域沿与所述导电图案交叉的方向延伸，以电连接所述公共源极区域; 以及在分离的电池阵列之间暴露第一杂质区域的一部分的第一接触孔。

8. 外观设计

USD654088S1 Blu-ray disk player 有权
公开(公告)号：USD654088S1
公开(公告)日：2012-02-14
申请号：US29373459
申请日：2011-04-12
申请人： Yeon-Moo Chung , Kyoung-Hoon Kim
设计人： Yeon-Moo Chung , Kyoung-Hoon Kim

9. 外观设计

USD654087S1 Blu-ray disk player 有权
公开(公告)号：USD654087S1
公开(公告)日：2012-02-14
申请号：US29373458
申请日：2011-04-12
申请人： Yeon-Moo Chung , Kyoung-Hoon Kim , Yun-Je Kang
设计人： Yeon-Moo Chung , Kyoung-Hoon Kim , Yun-Je Kang

10. 发明授权

US07989570B2 Catalyst system for preparing cyclic olefin addition polymer, cyclic olefin addition polymer prepared by using the catalyst system and method for preparing the same 有权
标题翻译：用于制备环烯烃加成聚合物的催化剂体系，使用催化剂体系制备的环烯烃加成聚合物及其制备方法
公开(公告)号：US07989570B2
公开(公告)日：2011-08-02
申请号：US11938037
申请日：2007-11-09
申请人： Sung-Ho Chun , Won-Kook Kim , Sung-Cheol Yoon , Tae-Sun Lim , Heon Kim , Kyoung-Hoon Kim
发明人： Sung-Ho Chun , Won-Kook Kim , Sung-Cheol Yoon , Tae-Sun Lim , Heon Kim , Kyoung-Hoon Kim
IPC分类号： C08F4/44
CPC分类号： C08G61/08 , C08F4/7027 , C08F32/08 , C08F132/08 , C08F2410/01 , C08G61/06 , G02F1/136227
摘要： The present invention relates to a catalyst system for preparing a cyclic olefin addition polymer, a method for preparing the catalyst system and a cyclic olefin addition polymer prepared by the method, and more particularly to the method comprising the steps of contacting some content of norbornene-based monomer having a specific polar functional group with a catalyst system comprising a) a Group X transition metal compound; b) a compound comprising a neutral Group XV electron donor ligand having a cone angle of at least 160°; and c) a salt capable of offering an anion that can be weakly coordinated to the transition metal of the a) the Group X transition metal compound.
摘要翻译：本发明涉及制备环状烯烃加成聚合物的催化剂体系，制备催化剂体系的方法和通过该方法制备的环状烯烃加成聚合物，更具体地涉及包括以下步骤的方法：将一些含有降冰片烯 - 具有特定极性官能团的具有催化剂体系的单体，所述催化剂体系包含a）第X族过渡金属化合物; b）包含锥角至少为160°的中性第XV族电子给体配体的化合物; 和c）能够提供可以与a）X族过渡金属化合物的过渡金属弱配位的阴离子的盐。

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