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1. 发明授权

US08453312B2 Method of manufacturing vibrating micromechanical structures 失效
标题翻译：制造振动微机械结构的方法
公开(公告)号：US08453312B2
公开(公告)日：2013-06-04
申请号：US12164300
申请日：2008-06-30
申请人： Ijaz H. Jafri , Jonathan L. Klein , Galen P. Magendanz
发明人： Ijaz H. Jafri , Jonathan L. Klein , Galen P. Magendanz
IPC分类号： H04R31/00 , H01L21/311
CPC分类号： B81C1/00142 , B81B2201/0271 , B81C2201/019 , B81C2203/036 , B81C2203/051 , H03H3/0072 , H03H9/2447 , H03H9/462 , Y10T29/49005 , Y10T29/49128 , Y10T29/49155 , Y10T29/49156 , Y10T29/49826 , Y10T29/49861
摘要： A method for fabrication of single crystal silicon micromechanical resonators using a two-wafer process, including either a Silicon-on-insulator (SOI) or insulating base and resonator wafers, wherein resonator anchors, a capacitive air gap, isolation trenches, and alignment marks are micromachined in an active layer of the base wafer; the active layer of the resonator wafer is bonded directly to the active layer of the base wafer; the handle and dielectric layers of the resonator wafer are removed; viewing windows are opened in the active layer of the resonator wafer; masking the single crystal silicon semiconductor material active layer of the resonator wafer with photoresist material; a single crystal silicon resonator is machined in the active layer of the resonator wafer using silicon dry etch micromachining technology; and the photoresist material is subsequently dry stripped.
摘要翻译：一种使用双晶片工艺制造单晶硅微机械谐振器的方法，包括绝缘体上硅（SOI）或绝缘基底和谐振器晶片，其中谐振器锚，电容气隙，隔离沟槽和对准标记被微加工在基底晶片的有源层中; 谐振器晶片的有源层直接接合到基底晶片的有源层; 去除谐振器晶片的手柄和电介质层; 观察窗在谐振器晶片的有源层中打开; 用光致抗蚀剂材料掩蔽谐振晶片的单晶硅半导体材料有源层; 使用硅干蚀刻微加工技术在谐振器晶片的有源层中加工单晶硅谐振器; 随后将光致抗蚀剂材料干燥剥离。

2. 发明申请

US20090007413A1 METHOD OF MANUFACTURING VIBRATING MICROMECHANICAL STRUCTURES 有权
标题翻译：振动微观结构的制造方法
公开(公告)号：US20090007413A1
公开(公告)日：2009-01-08
申请号：US12164308
申请日：2008-06-30
申请人： Ijaz H. Jafri , Jonathan L. Klein , Galen P. Magendanz
发明人： Ijaz H. Jafri , Jonathan L. Klein , Galen P. Magendanz
IPC分类号： H04R31/00 , H01L21/00
CPC分类号： B81C1/00142 , B81B2201/0271 , B81C2201/019 , B81C2203/036 , B81C2203/051 , H03H3/0072 , H03H9/2447 , H03H9/462 , Y10T29/49005 , Y10T29/49128 , Y10T29/49155 , Y10T29/49156 , Y10T29/49826 , Y10T29/49861
摘要： A method for fabrication of single crystal silicon micromechanical resonators using a two-wafer process, including either a Silicon-on-insulator (SOI) or insulating base and resonator wafers, wherein resonator anchors, a capacitive air gap, isolation trenches, and alignment marks are micromachined in an active layer of the base wafer; the active layer of the resonator wafer is bonded directly to the active layer of the base wafer; the handle and dielectric layers of the resonator wafer are removed; viewing windows are opened in the active layer of the resonator wafer; masking the single crystal silicon semiconductor material active layer of the resonator wafer with photoresist material; a single crystal silicon resonator is machined in the active layer of the resonator wafer using silicon dry etch micromachining technology; and the photoresist material is subsequently dry stripped.
摘要翻译：一种使用双晶片工艺制造单晶硅微机械谐振器的方法，包括绝缘体上硅（SOI）或绝缘基底和谐振器晶片，其中谐振器锚，电容气隙，隔离沟槽和对准标记被微加工在基底晶片的有源层中; 谐振器晶片的有源层直接接合到基底晶片的有源层; 去除谐振器晶片的手柄和电介质层; 观察窗在谐振器晶片的有源层中打开; 用光致抗蚀剂材料掩蔽谐振晶片的单晶硅半导体材料有源层; 使用硅干蚀刻微加工技术在谐振器晶片的有源层中加工单晶硅谐振器; 随后将光致抗蚀剂材料干燥剥离。

3. 发明授权

US07836574B2 Method of manufacturing vibrating micromechanical structures 有权
标题翻译：制造振动微机械结构的方法
公开(公告)号：US07836574B2
公开(公告)日：2010-11-23
申请号：US12164308
申请日：2008-06-30
申请人： Ijaz H. Jafri , Jonathan L. Klein , Galen P. Magendanz
发明人： Ijaz H. Jafri , Jonathan L. Klein , Galen P. Magendanz
IPC分类号： H04R31/00
CPC分类号： B81C1/00142 , B81B2201/0271 , B81C2201/019 , B81C2203/036 , B81C2203/051 , H03H3/0072 , H03H9/2447 , H03H9/462 , Y10T29/49005 , Y10T29/49128 , Y10T29/49155 , Y10T29/49156 , Y10T29/49826 , Y10T29/49861
摘要： A method for fabrication of single crystal silicon micromechanical resonators using a two-wafer process, including either a Silicon-on-insulator (SOI) or insulating base and resonator wafers, wherein resonator anchors, a capacitive air gap, isolation trenches, and alignment marks are micromachined in an active layer of the base wafer; the active layer of the resonator wafer is bonded directly to the active layer of the base wafer; the handle and dielectric layers of the resonator wafer are removed; viewing windows are opened in the active layer of the resonator wafer; masking the single crystal silicon semiconductor material active layer of the resonator wafer with photoresist material; a single crystal silicon resonator is machined in the active layer of the resonator wafer using silicon dry etch micromachining technology; and the photoresist material is subsequently dry stripped.
摘要翻译：一种使用双晶片工艺制造单晶硅微机械谐振器的方法，其包括绝缘体上硅（SOI）或绝缘基底和谐振晶片，其中谐振器锚，电容气隙，隔离沟槽和对准标记被微加工在基底晶片的有源层中; 谐振器晶片的有源层直接接合到基底晶片的有源层; 去除谐振器晶片的手柄和电介质层; 观察窗在谐振器晶片的有源层中打开; 用光致抗蚀剂材料掩蔽谐振晶片的单晶硅半导体材料有源层; 使用硅干蚀刻微加工技术在谐振器晶片的有源层中加工单晶硅谐振器; 随后将光致抗蚀剂材料干燥剥离。

4. 发明授权

US07406761B2 Method of manufacturing vibrating micromechanical structures 失效
标题翻译：制造振动微机械结构的方法
公开(公告)号：US07406761B2
公开(公告)日：2008-08-05
申请号：US11084978
申请日：2005-03-21
申请人： Ijaz H. Jafri , Jonathan L. Klein , Galen P. Magendanz
发明人： Ijaz H. Jafri , Jonathan L. Klein , Galen P. Magendanz
IPC分类号： H05K3/20
CPC分类号： B81C1/00142 , B81B2201/0271 , B81C2201/019 , B81C2203/036 , B81C2203/051 , H03H3/0072 , H03H9/2447 , H03H9/462 , Y10T29/49005 , Y10T29/49128 , Y10T29/49155 , Y10T29/49156 , Y10T29/49826 , Y10T29/49861
摘要： A method for fabrication of single crystal silicon micromechanical resonators using a two-wafer process, including either a Silicon-on-insulator (SOI) or insulating base and resonator wafers, wherein resonator anchors, a capacitive air gap, isolation trenches, and alignment marks are micromachined in an active layer of the base wafer; the active layer of the resonator wafer is bonded directly to the active layer of the base wafer; the handle and dielectric layers of the resonator wafer are removed; viewing windows are opened in the active layer of the resonator wafer; masking the single crystal silicon semiconductor material active layer of the resonator wafer with photoresist material; a single crystal silicon resonator is machined in the active layer of the resonator wafer using silicon dry etch micromachining technology; and the photoresist material is subsequently dry stripped.
摘要翻译：一种使用双晶片工艺制造单晶硅微机械谐振器的方法，包括绝缘体上硅（SOI）或绝缘基底和谐振器晶片，其中谐振器锚，电容气隙，隔离沟槽和对准标记被微加工在基底晶片的有源层中; 谐振器晶片的有源层直接接合到基底晶片的有源层; 去除谐振器晶片的手柄和电介质层; 观察窗在谐振器晶片的有源层中打开; 用光致抗蚀剂材料掩蔽谐振晶片的单晶硅半导体材料有源层; 使用硅干蚀刻微加工技术在谐振器晶片的有源层中加工单晶硅谐振器; 随后将光致抗蚀剂材料干燥剥离。

5. 发明申请

US20080261372A1 METHOD OF MANUFACTURING VIBRATING MICROMECHANICAL STRUCTURES 失效
标题翻译：振动微观结构的制造方法
公开(公告)号：US20080261372A1
公开(公告)日：2008-10-23
申请号：US12164300
申请日：2008-06-30
申请人： Ijaz H. Jafri , Jonathan L. Klein , Galen P. Magendanz
发明人： Ijaz H. Jafri , Jonathan L. Klein , Galen P. Magendanz
IPC分类号： H03H3/007
CPC分类号： B81C1/00142 , B81B2201/0271 , B81C2201/019 , B81C2203/036 , B81C2203/051 , H03H3/0072 , H03H9/2447 , H03H9/462 , Y10T29/49005 , Y10T29/49128 , Y10T29/49155 , Y10T29/49156 , Y10T29/49826 , Y10T29/49861
摘要： A method for fabrication of single crystal silicon micromechanical resonators using a two-wafer process, including either a Silicon-on-insulator (SOI) or insulating base and resonator wafers, wherein resonator anchors, a capacitive air gap, isolation trenches, and alignment marks are micromachined in an active layer of the base wafer; the active layer of the resonator wafer is bonded directly to the active layer of the base wafer; the handle and dielectric layers of the resonator wafer are removed; viewing windows are opened in the active layer of the resonator wafer; masking the single crystal silicon semiconductor material active layer of the resonator wafer with photoresist material; a single crystal silicon resonator is machined in the active layer of the resonator wafer using silicon dry etch micromachining technology; and the photoresist material is subsequently dry stripped.
摘要翻译：一种使用双晶片工艺制造单晶硅微机械谐振器的方法，包括绝缘体上硅（SOI）或绝缘基底和谐振器晶片，其中谐振器锚，电容气隙，隔离沟槽和对准标记被微加工在基底晶片的有源层中; 谐振器晶片的有源层直接接合到基底晶片的有源层; 去除谐振器晶片的手柄和电介质层; 观察窗在谐振器晶片的有源层中打开; 用光致抗蚀剂材料掩蔽谐振晶片的单晶硅半导体材料有源层; 使用硅干蚀刻微加工技术在谐振器晶片的有源层中加工单晶硅谐振器; 随后将光致抗蚀剂材料干燥剥离。

6. 发明授权

US07516661B2 Z offset MEMS device 有权
标题翻译： Z偏移MEMS器件
公开(公告)号：US07516661B2
公开(公告)日：2009-04-14
申请号：US11360870
申请日：2006-02-23
申请人： Jonathan L. Klein , Galen P. Magendanz , Peter H. LaFond , Mark L. Williams , Michael J. Foster
发明人： Jonathan L. Klein , Galen P. Magendanz , Peter H. LaFond , Mark L. Williams , Michael J. Foster
IPC分类号： G01P15/00 , G01P15/125
CPC分类号： B81B7/0077 , B81B2201/033 , G01P15/0802 , G01P15/125 , G01P15/18 , Y10T74/22
摘要： A microelectromechanical system (MEMS) device with a mechanism layer having a first part and a second part, and at least one cover for sealing the mechanism layer. The inner surface of at least one of the covers is structured such that a protruding structure is present on the inner surface of the cover and wherein the protruding structure mechanically causes the first part to be deflected out of a plane associated with the second part.
摘要翻译：一种具有机械层的微机电系统（MEMS）装置，其具有第一部分和第二部分，以及至少一个用于密封机构层的盖。至少一个盖的内表面构造成使得突出结构存在于盖的内表面上，并且其中突出结构机械地使第一部分偏离与第二部分相关联的平面。

7. 发明授权

US5644177A Micromechanical magnetically actuated devices 失效
标题翻译：微机械磁力驱动装置
公开(公告)号：US5644177A
公开(公告)日：1997-07-01
申请号：US393432
申请日：1995-02-23
申请人： Henry Guckel , Jonathan L. Klein , Thomas L. Earles
发明人： Henry Guckel , Jonathan L. Klein , Thomas L. Earles
IPC分类号： F04B17/04 , F04B19/00 , H01H50/00 , H02K33/10 , H02K41/035 , H02K15/00 , H02K57/00
CPC分类号： F04B17/042 , F04B19/006 , H01H50/005 , H02K33/10 , H02K41/0352 , H02K99/00 , H01H2001/0078 , Y10S310/06
摘要： Micromechanical structures capable of actuation for purposes such as fluid flow control are formed on substrates in sizes in the range of one or two millimeters or less using micromechanical processing techniques. A magnetic core having a gap therein is fixed on the substrate, and a plunger is mounted by a spring for movement parallel to the substrate in response to the flux provided to the gap of the fixed core. An electrical coil wound around a mandrel is engaged to the fixed magnetic core such that flux is induced in the core when current is supplied to the coil, driving the plunger against the force of the spring. A micromechanical fluid control unit includes a metal frame structure formed by electrodeposition on a substrate with the inner wall of the frame having slots formed therein to admit a separator wall which divides the interior of the frame into separate chambers, with a cover secured over the top of the frame and the separator wall to seal the chambers. A plunger actuator can be mounted within the frame with fixed core sections extending through the walls of the frame, and with the mandrel and coil engaged to the fixed core sections outside of the frame to provide magnetic flux to a gap to actuate the plunger within the sealed enclosure.
摘要翻译：使用微机械处理技术，能够致动用于例如流体流动控制的微机械结构在尺寸在一个或两个毫米或更小的范围内的基板上形成。其中具有间隙的磁芯固定在基板上，并且响应于提供给固定芯的间隙的通量，通过弹簧安装柱塞以平行于基板移动。缠绕在心轴上的电线圈与固定磁芯接合，使得当电流供应到线圈时，磁芯中引起磁通，抵抗弹簧的力驱动柱塞。微机械流体控制单元包括通过电沉积在基底上而形成的金属框架结构，其中框架的内壁具有形成在其中的槽，以允许将框架内部分成分离的室的分隔壁，其顶盖固定在顶部的框架和分离器壁以密封室。柱塞致动器可以安装在框架内，固定的芯部分延伸穿过框架的壁，并且心轴和线圈与框架外部的固定芯部分接合，以向间隙提供磁通量，从而致动柱塞密封外壳。

8. 发明申请

US20080032501A1 SILICON ON METAL FOR MEMS DEVICES 审中-公开
标题翻译：用于MEMS器件的金属硅
公开(公告)号：US20080032501A1
公开(公告)日：2008-02-07
申请号：US11459307
申请日：2006-07-21
申请人： Jonathan L. Klein , Jorg Pilchowski
发明人： Jonathan L. Klein , Jorg Pilchowski
IPC分类号： H01L21/44
CPC分类号： B81C1/00579 , B81C2201/0107 , B81C2201/014
摘要： Micro-electromechanical systems (MEMS) pre-fabrication products and methods for forming MEMS devices using silicon-on-metal (SOM) wafers. An embodiment of a method may include the steps of bonding a patterned SOM wafer to a cover wafer, thinning the handle layer of the SOM wafer, selectively removing the exposed metal layer, and either continuing with final metallization or cover bonding to the back of the active layer.
摘要翻译：微机电系统（MEMS）预制产品和使用金属硅（SOM）晶片形成MEMS器件的方法。方法的一个实施例可以包括以下步骤：将图案化的SOM晶片结合到覆盖晶片，使SOM晶片的手柄层变薄，选择性地去除暴露的金属层，并且继续进行最后的金属化或覆盖粘合到活动层

9. 发明授权

US5908719A Radiation mask adapted to be aligned with a photoresist layer and method of making the same 有权
标题翻译：适于与光致抗蚀剂层对准的辐射掩模及其制造方法
公开(公告)号：US5908719A
公开(公告)日：1999-06-01
申请号：US151922
申请日：1998-09-11
申请人： Henry Guckel , Harald Emmerich , Jonathan L. Klein
发明人： Henry Guckel , Harald Emmerich , Jonathan L. Klein
IPC分类号： G03F1/22 , G03F7/00 , G03F7/09 , G03F7/20 , G03F9/00 , G03F5/00
CPC分类号： G03F1/22 , G03F7/0035 , G03F7/094 , G03F7/2039 , G03F9/00 , G03F9/70 , G03F7/00
摘要： The present invention provides a procedure for achieving accurate alignment between an X-ray mask and a device substrate for the fabrication of multi-layer microstructures. A first photoresist layer on the substrate is patterned by a first X-ray mask to include first alignment holes along with a first layer microstructure pattern. Mask photoresist layers are attached to second and subsequent masks that are used to pattern additional photoresist layers attached to the microstructure device substrate. The mask photoresist layers are patterned to include mask alignment holes that correspond in geometry to the first alignment holes in the first photoresist layer on the device substrate. Alignment between a second mask and the first photoresist layer is achieved by assembly of the second mask onto the first photoresist layer using alignment posts placed in the first alignment holes in the first photoresist layer that penetrate into the mask alignment holes in the mask photoresist layers. The alignment procedure is particularly applicable to the fabrication of multi-layer metal microstructures using deep X-ray lithography and electroplating. The alignment procedure may be extended to multiple photoresist layers and larger device heights using spacer photoresist sheets between subsequent masks and the first photoresist layer that are joined together using alignment posts.
摘要翻译：本发明提供了用于实现X射线掩模和用于制造多层微结构的器件衬底之间的精确对准的步骤。通过第一X射线掩模对衬底上的第一光致抗蚀剂层进行构图，以包括第一对准孔以及第一层微结构图案。掩模光致抗蚀剂层附着到第二和随后的掩模，其用于图案附着到微结构器件衬底的附加光致抗蚀剂层。掩模光致抗蚀剂层被图案化以包括掩模对准孔，其几何形状对应于器件基板上的第一光致抗蚀剂层中的第一对准孔。第二掩模和第一光致抗蚀剂层之间的对准是通过使用位于第一光致抗蚀剂层中的第一对准孔中的对准柱将第二掩模组装到第一光致抗蚀剂层上而实现的，该第一光刻胶层渗透到掩模光致抗蚀剂层中的掩模对准孔中。对准程序特别适用于使用深X射线光刻和电镀制造多层金属微结构。使用在后续掩模之间的间隔光致抗蚀剂片和使用对准柱连接在一起的第一光致抗蚀剂层，可以将对准过程扩展到多个光致抗蚀剂层和更大的器件高度。

10. 发明授权

US5866281A Alignment method for multi-level deep x-ray lithography utilizing alignment holes and posts 失效
标题翻译：使用对准孔和柱的多层深X射线光刻的对准方法
公开(公告)号：US5866281A
公开(公告)日：1999-02-02
申请号：US753645
申请日：1996-11-27
申请人： Henry Guckel , Harald Emmerich , Jonathan L. Klein
发明人： Henry Guckel , Harald Emmerich , Jonathan L. Klein
IPC分类号： G03F1/22 , G03F7/00 , G03F7/09 , G03F7/20 , G03F9/00
CPC分类号： G03F1/22 , G03F7/0035 , G03F7/094 , G03F7/2039 , G03F9/00 , G03F9/70 , G03F7/00
摘要： The present invention provides a procedure for achieving accurate alignment between an X-ray mask and a device substrate for the fabrication of multi-layer microstructures. A first photoresist layer on the substrate is patterned by a first X-ray mask to include first alignment holes along with a first layer microstructure pattern. Mask photoresist layers are attached to second and subsequent masks that are used to pattern additional photoresist layers attached to the microstructure device substrate. The mask photoresist layers are patterned to include mask alignment holes that correspond in geometry to the first alignment holes in the first photoresist layer on the device substrate. Alignment between a second mask and the first photoresist layer is achieved by assembly of the second mask onto the first photoresist layer using alignment posts placed in the first alignment holes in the first photoresist layer that penetrate into the mask alignment holes in the mask photoresist layers. The alignment procedure is particularly applicable to the fabrication of multi-layer metal microstructures using deep X-ray lithography and electroplating. The alignment procedure may be extended to multiple photoresist layers and larger device heights using spacer photoresist sheets between subsequent masks and the first photoresist layer that are joined together using alignment posts.
摘要翻译：本发明提供了用于实现X射线掩模和用于制造多层微结构的器件衬底之间的精确对准的步骤。通过第一X射线掩模对衬底上的第一光致抗蚀剂层进行构图，以包括第一对准孔以及第一层微结构图案。掩模光致抗蚀剂层附着到第二和随后的掩模，其用于图案附着到微结构器件衬底的附加光致抗蚀剂层。掩模光致抗蚀剂层被图案化以包括掩模对准孔，其几何形状对应于器件基板上的第一光致抗蚀剂层中的第一对准孔。第二掩模和第一光致抗蚀剂层之间的对准是通过使用位于第一光致抗蚀剂层中的第一对准孔中的对准柱将第二掩模组装到第一光致抗蚀剂层上而实现的，该第一光刻胶层渗透到掩模光致抗蚀剂层中的掩模对准孔中。对准程序特别适用于使用深X射线光刻和电镀制造多层金属微结构。使用在后续掩模之间的间隔光致抗蚀剂片和使用对准柱连接在一起的第一光致抗蚀剂层，可以将对准过程扩展到多个光致抗蚀剂层和更大的器件高度。

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